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Jhih-cheng You - One of the best experts on this subject based on the ideXlab platform.

  • temperature to frequency converter with 1 47 Error using thermistor Linearity calibration
    IEEE Sensors Journal, 2019
    Co-Authors: Chua-chin Wang, Zong-you Hou, Jhih-cheng You
    Abstract:

    Temperature variation is well known to be very critical for estimating other parameters, e.g., the state of charge and the state of health of batteries. A high-accuracy temperature to frequency converter with thermistor linear calibration based on the thermistor linearization circuit is designed and analyzed in this investigation, where a voltage-to-frequency converter (VFC) is added instead of an analog-to-digital converter. The proposed design converts the voltage into a digital signal (frequency output) to reduce design complexity as well as the cost of chip area. A detailed analysis, including the method using the thermistor linearization calibration circuit and VFC, is reported in this paper. The measurement results in a thermal chamber establish that the output frequency is 1.62 to 2.27 MHz, the maximum Linearity Error is ±0.5%, and the temperature Error is ≤1.47% in the temperature range of 268.15 to 313.15 K.

  • Temperature-to-Frequency Converter With 1.47% Error Using Thermistor Linearity Calibration
    IEEE Sensors Journal, 2019
    Co-Authors: Chua-chin Wang, Zong-you Hou, Jhih-cheng You
    Abstract:

    Temperature variation is well known to be very critical for estimating other parameters, e.g., the state of charge and the state of health of batteries. A high-accuracy temperature to frequency converter with thermistor linear calibration based on the thermistor linearization circuit is designed and analyzed in this investigation, where a voltage-to-frequency converter (VFC) is added instead of an analog-to-digital converter. The proposed design converts the voltage into a digital signal (frequency output) to reduce design complexity as well as the cost of chip area. A detailed analysis, including the method using the thermistor linearization calibration circuit and VFC, is reported in this paper. The measurement results in a thermal chamber establish that the output frequency is 1.62 to 2.27 MHz, the maximum Linearity Error is ±0.5%, and the temperature Error is ≤1.47% in the temperature range of 268.15 to 313.15 K.

  • A High-Precision CMOS Temperature Sensor with Thermistor Linear Calibration in the (-5 °C, 120 °C) Temperature Range.
    Sensors, 2018
    Co-Authors: Chua-chin Wang, Zong-you Hou, Jhih-cheng You
    Abstract:

    A high-precision Complementary Metal-Oxide-Semiconductor (CMOS) temperature sensor for (−5 °C, 120 °C) temperature range is designed and analyzed in this investigation. The proposed design is featured with a temperature range selection circuit so that the thermistor linear circuit automatically switches to a corresponding calibration loop in light of the temperature range besides the analysis of the calibration method. It resolves the problem that the temperature range of a single thermistor temperature sensor is too small. Notably, the output of the proposed design also attains a high Linearity. The measurement results in a thermal chamber justifying that the output voltage is 1.96 V to 4.15 V, the maximum Linearity Error ≤1.4%, and the worst temperature Error ≤1.1 °C in the temperature range of −5 °C to 120 °C.

Vamsy P Chodavarapu - One of the best experts on this subject based on the ideXlab platform.

  • differential wide temperature range cmos interface circuit for capacitive mems pressure sensors
    Sensors, 2015
    Co-Authors: Yucai Wang, Vamsy P Chodavarapu
    Abstract:

    We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between −55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology with 2.5 V power supply. A constant-gm biasing technique is used to mitigate performance degradation at high temperatures. The circuit offers the flexibility to interface with MEMS sensors with a wide range of the steady-state capacitance values from 0.5 pF to 10 pF. Simulation results show that the circuitry has excellent Linearity and stability over the wide temperature range. Experimental results confirm that the temperature effects on the circuitry are small, with an overall Linearity Error around 2%.

Chua-chin Wang - One of the best experts on this subject based on the ideXlab platform.

  • temperature to frequency converter with 1 47 Error using thermistor Linearity calibration
    IEEE Sensors Journal, 2019
    Co-Authors: Chua-chin Wang, Zong-you Hou, Jhih-cheng You
    Abstract:

    Temperature variation is well known to be very critical for estimating other parameters, e.g., the state of charge and the state of health of batteries. A high-accuracy temperature to frequency converter with thermistor linear calibration based on the thermistor linearization circuit is designed and analyzed in this investigation, where a voltage-to-frequency converter (VFC) is added instead of an analog-to-digital converter. The proposed design converts the voltage into a digital signal (frequency output) to reduce design complexity as well as the cost of chip area. A detailed analysis, including the method using the thermistor linearization calibration circuit and VFC, is reported in this paper. The measurement results in a thermal chamber establish that the output frequency is 1.62 to 2.27 MHz, the maximum Linearity Error is ±0.5%, and the temperature Error is ≤1.47% in the temperature range of 268.15 to 313.15 K.

  • Temperature-to-Frequency Converter With 1.47% Error Using Thermistor Linearity Calibration
    IEEE Sensors Journal, 2019
    Co-Authors: Chua-chin Wang, Zong-you Hou, Jhih-cheng You
    Abstract:

    Temperature variation is well known to be very critical for estimating other parameters, e.g., the state of charge and the state of health of batteries. A high-accuracy temperature to frequency converter with thermistor linear calibration based on the thermistor linearization circuit is designed and analyzed in this investigation, where a voltage-to-frequency converter (VFC) is added instead of an analog-to-digital converter. The proposed design converts the voltage into a digital signal (frequency output) to reduce design complexity as well as the cost of chip area. A detailed analysis, including the method using the thermistor linearization calibration circuit and VFC, is reported in this paper. The measurement results in a thermal chamber establish that the output frequency is 1.62 to 2.27 MHz, the maximum Linearity Error is ±0.5%, and the temperature Error is ≤1.47% in the temperature range of 268.15 to 313.15 K.

  • A High-Precision CMOS Temperature Sensor with Thermistor Linear Calibration in the (-5 °C, 120 °C) Temperature Range.
    Sensors, 2018
    Co-Authors: Chua-chin Wang, Zong-you Hou, Jhih-cheng You
    Abstract:

    A high-precision Complementary Metal-Oxide-Semiconductor (CMOS) temperature sensor for (−5 °C, 120 °C) temperature range is designed and analyzed in this investigation. The proposed design is featured with a temperature range selection circuit so that the thermistor linear circuit automatically switches to a corresponding calibration loop in light of the temperature range besides the analysis of the calibration method. It resolves the problem that the temperature range of a single thermistor temperature sensor is too small. Notably, the output of the proposed design also attains a high Linearity. The measurement results in a thermal chamber justifying that the output voltage is 1.96 V to 4.15 V, the maximum Linearity Error ≤1.4%, and the worst temperature Error ≤1.1 °C in the temperature range of −5 °C to 120 °C.

Andrea Ponzoni - One of the best experts on this subject based on the ideXlab platform.

  • a 10 ms readout interface for the characterization of high value wide range experimental resistive sensors
    Sensors and Actuators B-chemical, 2010
    Co-Authors: A Depari, A Flammini, D Marioli, E Sisinni, Elisabetta Comini, Andrea Ponzoni
    Abstract:

    Abstract Metal oxide gas sensors exhibit resistance values varying over a wide range, from tens of kilohms to tens of gigohms, depending on the chosen oxide and on the excitation parameters (voltage, temperature, gas exposure). Resistance-to-time converters (RTC) are widely used as electronic interfaces for such sensors, thanks to the low-cost, low-noise and high-range characteristics. RTC main limit is in the variable and long measuring time, ranging from microseconds (tens of kilohms) to several seconds (tens of gigohms), impeding a fine analysis of fast transients. This work proposes a new approach based on combination of the RTC method with a new technique based on the least mean square (LMS) algorithm. The implemented prototype allows the sensor resistance to be estimated with a fixed measuring time of 10 ms over the range 10 kΩ–10 GΩ with relative estimation Error below 10% (below 1% in the range 47 kΩ–2 GΩ). It can furthermore estimate the parasitic capacitance of the sensor (in parallel with the resistive component), on the order of few picofarads with a Linearity Error less than 0.5% full scale (FS). Fast thermal transients of a SnO 2 nanowire sensor have been finely analyzed using the new interface system, demonstrating the suitability of the proposed method for accurate analysis of new experimental resistive sensors.

Chihcheng Hsieh - One of the best experts on this subject based on the ideXlab platform.

  • a cmos time of flight depth image sensor with in pixel background light cancellation and phase shifting readout technique
    IEEE Journal of Solid-state Circuits, 2018
    Co-Authors: Ting Liao, Chihcheng Hsieh
    Abstract:

    A CMOS time-of-flight (TOF) image sensor with in-pixel background light (BGL) cancellation and demodulation lock-in pixel is developed for both indoor and outdoor depth imaging applications. The proposed polarity switching integration technique using p+/n-well diode realizes the in-pixel BGL cancellation up to 180 klx. In addition, the developed phase-shift readout (PSR) effectively reduces the inherent correlated noise and column fixed-pattern noise (FPN) as well with sensitivity improvement. A prototyped pulse-modulation-based TOF sensing chip with a $64 \times 64$ pixel array, $20\mu \text {m} \times 20\mu \text{m}$ pixel pitch, and 33% fill factor has been fabricated in TSMC standard 0.18- $\mu \text{m}$ CMOS process and verified. The achieved depth sensing capability ranges from 0.75 to 7.5 m with a Linearity Error below 1.1%, and the measured relative precision is 4.2% at a 7.5-m target distance.

  • a cmos time of flight tof depth image sensor with in pixel background cancellation and sensitivity improvement using phase shifting readout technique
    Asian Solid-State Circuits Conference, 2017
    Co-Authors: Ting Liao, Chihcheng Hsieh
    Abstract:

    This paper presents a CMOS time-of-flight (TOF) image sensor with in-pixel background light cancellation for outdoor depth imaging application. The using of P+/N_well diode with proposed polarity switching integration and phase-shift readout (PSR) technique achieves the in-pixel background cancellation capability and sensitivity improvement. Moreover, the PSR also suppresses the column fixed-pattern-noise (FPN) without need of extra frame capturing. A prototype TOF sensing chip with a 64×64 array has been fabricated in TSMC standard 0.18pm CMOS process and verified. The pixel pitch is 20pmx20pm with a fill-factor of 33%. The achieved depth measurement range is 0.75 to 7.5 meters with a Linearity Error below 1.1%. The measured relative precision is 4.2% at a 7.5-meter target distance; and the background light suppression capability is up to 180k lux without saturation.