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Sheyshi Lu - One of the best experts on this subject based on the ideXlab platform.

  • analysis and design of a cmos uwb lna with dual rlc branch wideband input matching network
    IEEE Transactions on Microwave Theory and Techniques, 2010
    Co-Authors: Changzhi Chen, Chichen Chen, Hongyu Yang, Guowei Huang, Sheyshi Lu
    Abstract:

    A wideband low-noise amplifier (LNA) based on the current-reused cascade configuration is proposed. The wideband input-impedance matching was achieved by taking advantage of the resistive shunt-shunt feedback in conjunction with a parallel LC load to make the input network equivalent to two parallel RLC-branches, i.e., a second-order wideband bandpass filter. Besides, both the inductive series- and shunt-peaking techniques are used for bandwidth extension. Theoretical analysis shows that both the frequency response of input matching and noise figure (NF) can be described by second-order functions with quality factors as parameters. The CMOS ultra-wideband LNA dissipates 10.34-mW power and achieves S 11 below -8.6 dB, S 22 below -10 dB, S 12 below -26 dB, flat S 21 of 12.26 ± 0.63 dB, and flat NF of 4.24 ± 0.5 dB over the 3.1-10.6-GHz band of interest. Besides, good phase Linearity Property (group-delay variation is only ±22 ps across the whole band) is also achieved. The analytical, simulated, and measured results agree well with one another.

  • 3 10 ghz ultra wideband low noise amplifier utilizing miller effect and inductive shunt shunt feedback technique
    IEEE Transactions on Microwave Theory and Techniques, 2007
    Co-Authors: Hsiaochin Chen, Tao Wang, Sheyshi Lu
    Abstract:

    In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase Linearity Property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.

Ys Lin - One of the best experts on this subject based on the ideXlab platform.

  • 3-10-GHz ultra-wideband low--noise amplifier utilizing Miller effect and inductive shunt-shunt feedback technique 
    IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2020
    Co-Authors: Ys Lin
    Abstract:

    [[abstract]]In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S-11 below -10 dB for frequencies from 3 to 14 GHz; (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S-21 of 24.6 +/- 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respective ly, and good phase Linearity Property (group-delay variation is only +/-28 ps across the entire band). The measured I-dB compression point (P-1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.[[note]]SC

  • 0.18 mu m 21-27 GHz CMOS UWB LNA with 9.3 +/- 1.3 dB gain and 103.9 +/- 8.1 ps group delay
    INST ENGINEERING TECHNOLOGY-IET, 2020
    Co-Authors: Ys Lin
    Abstract:

    [[abstract]]A 21-27 GHz CMOS ultra-wideband low-noise amplifier (UWB LNA) with state-of-the-art phase Linearity Property (group delay variation is only +/-8.1 ps across the whole band) is reported for the first time. To achieve high and. at gain (S(21)) and small group delay variation at the same time, the inductive series peaking technique was adopted in the output of each stage for bandwidth enhancement. The LNA dissipated 27 mW power and achieved input return loss (S(11)) of -13 to -20.1 dB, output return loss (S(22)) of -8.2 to -30.2 dB, flat S(21) of 9.3 +/- 1.3 dB, reverse isolation (S(12)) of -52.7 to -73.3 dB, and noise figure of 4.9-6.1 dB over the 21-27 GHz band of interest. The measured 1 dB compression point (P(1dB)) and input third-order intermodulation point (IIP3) were 214 and 24 dBm, respectively, at 24 GHz.[[note]]SC

  • A 3.1-10.6-GHz Current-Reused CMOS Ultra-Wideband Low-Noise Amplifier Using Self-Forward Body Bias and Forward Combining Techniques
    WILEY-BLACKWELL, 2020
    Co-Authors: Ys Lin
    Abstract:

    [[abstract]]A 3.1-10.6-GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase Linearity Property (group-delay variation is only +/-19.46 ps across the whole band) using standard 0.18-mu m CMOS technology is reported. Current reused, self-forward body bias and forward combining techniques are used to achieve low power and high-power gain (S-21). Both high and flat S-21 and low and flat noise figure (NF) frequency responses are achieved by tuning the pole frequencies and pole quality factors of the second-order gain and NF frequency responses to approximate the maximally flat condition simultaneously. The LNA dissipates 6.93-mW power and achieves NF of 3.76 at 10 GHz. In addition, the LNA achieves input return loss (S-11) smaller than -10.6 dB, and high and flat S-21 of 11.02 +/- 0.47 dB over the 3.1-10.6-GHz band. The corresponding figure of merit (FOM) is 3.11 GHz/mW, one of the lowest FOMs ever reported for a 3.1-10.6 GHz CMOS UWB LNA. The measured input third-order intermodulation point (IIP3) is -3.6 dBm at 6 GHz. (C) 2013 Wiley Periodicals, Inc.[[note]]SC

  • A 4.9-dB NF 53.5-to 62-GHz MICROMACHINED CMOS WIDEBAND LNA WITH SMALL GROUP-DELAY-VARIATION
    WILEY-BLACKWELL, 2020
    Co-Authors: Ys Lin
    Abstract:

    [[abstract]]A 53.5- to 62-GHz wideband low-noise amplifier (LNA) with excellent phase Linearity Property using standard 0.13 mu m CMOS technology is reported. To achieve sufficient gain, the LNA is composed of six cascade common-source stages. Current-sharing technique is adopted to reduce power dissipation. The LNA (STD LNA) consumed 29.1 mW and achieved input return loss (S(11)) of -10.3 to -19.5 dB, output return loss (S(22)) of -13.8 to -27.8 dB, forward gain (S(21)) of 8.1 to 11.1 dB, and reverse isolation (S(12)) of -49.9 to -60.2 dB over the 53.5- to 62-GHz-band. The minimum NF (NF(min)) is 5.4 dB at 62 GHz. To reduce the substrate loss, the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the LNA. After the ICP etching, the LNA (ICP LNA) achieved maximum S(21) (S(21-max)) of 13.2 dB (at 58 GHz), 2.1 dB higher than that (11.1 dB) of the STD LNA (at 58.5 GHz). In addition, the ICP LNA achieved NF(min), of 4.9 dB (at 61 GI-1z), 0.5 dB lower than that (5.4 dB) of the SID LNA (at 62 GHz). These results demonstrate the proposed LNA architecture in conjunction with the backside ICP deep-trench technology is very promising for high-performance 60-GHz-band RFIC applications. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2427-2432, 2010: View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25500[[note]]SC

  • 2 5 db nf 3 1 10 6 ghz cmos uwb lna with small group delay variation
    Electronics Letters, 2008
    Co-Authors: Hungyu Yang, Ys Lin, Chichen Chen
    Abstract:

    A 3.1-10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase Linearity Property (group-delay variation is only plusmn 16.7 ps across the whole band) using standard 0.13 mum CMOS technology is reported. To achieve high and flat gain and small group-delay variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA achieved input return loss (S 11 ) of -17.5 to -33.6 dB, output return loss (S 22 ) of -14.4 to -16.3 dB, flat forward gain (S 22 ) of 7.92 plusmn 0.23 dB, and reverse isolation (S 12 ) of -25.8 to -41.9 dB over the 3.1-10.6 GHz band of interest. A state-of-the-art noise figure (NF) of 2.5 dB was achieved at 10.5 GHz.

Chichen Chen - One of the best experts on this subject based on the ideXlab platform.

  • a 4 9 db nf 53 5 62 ghz micro machined cmos wideband lna with small group delay variation
    International Microwave Symposium, 2010
    Co-Authors: Chichen Chen, Yosheng Lin, Penli Huang, Jinfa Chang
    Abstract:

    A 53.5–62-GHz wideband CMOS low-noise amplifier (LNA) with excellent phase Linearity Property is reported. Current-sharing technique is adopted to reduce power dissipation. The LNA (STD LNA) consumed 29.1 mW and achieved input return loss (S11) of −10.3∼ −19.5 dB, output return loss (S 22 ) of −13.8∼ −27.8 dB, forward gain (S 21 ) of 8.1∼ 11.1 dB, and reverse isolation (S 12 ) of −49.9∼ −60.2 dB over the 53.5–62-GHz-band. The minimum NF (NF min ) is 5.4 dB at 62 GHz. To reduce the substrate loss, the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to remove the silicon underneath the LNA. After the ICP etching, the LNA (ICP LNA) achieved maximum S 21 (S 21-max ) of 13.2 dB, 2.1 dB higher than that (11.1 dB) of the STD LNA. In addition, the ICP LNA achieved NF min of 4.9 dB, 0.5 dB lower than that (5.4 dB) of the STD LNA. These results demonstrate the proposed LNA architecture in conjunction with the backside ICP technology is very promising for 60-GHz-band RFIC applications.

  • analysis and design of a cmos uwb lna with dual rlc branch wideband input matching network
    IEEE Transactions on Microwave Theory and Techniques, 2010
    Co-Authors: Changzhi Chen, Chichen Chen, Hongyu Yang, Guowei Huang, Sheyshi Lu
    Abstract:

    A wideband low-noise amplifier (LNA) based on the current-reused cascade configuration is proposed. The wideband input-impedance matching was achieved by taking advantage of the resistive shunt-shunt feedback in conjunction with a parallel LC load to make the input network equivalent to two parallel RLC-branches, i.e., a second-order wideband bandpass filter. Besides, both the inductive series- and shunt-peaking techniques are used for bandwidth extension. Theoretical analysis shows that both the frequency response of input matching and noise figure (NF) can be described by second-order functions with quality factors as parameters. The CMOS ultra-wideband LNA dissipates 10.34-mW power and achieves S 11 below -8.6 dB, S 22 below -10 dB, S 12 below -26 dB, flat S 21 of 12.26 ± 0.63 dB, and flat NF of 4.24 ± 0.5 dB over the 3.1-10.6-GHz band of interest. Besides, good phase Linearity Property (group-delay variation is only ±22 ps across the whole band) is also achieved. The analytical, simulated, and measured results agree well with one another.

  • 2 5 db nf 3 1 10 6 ghz cmos uwb lna with small group delay variation
    Electronics Letters, 2008
    Co-Authors: Hungyu Yang, Ys Lin, Chichen Chen
    Abstract:

    A 3.1-10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase Linearity Property (group-delay variation is only plusmn 16.7 ps across the whole band) using standard 0.13 mum CMOS technology is reported. To achieve high and flat gain and small group-delay variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA achieved input return loss (S 11 ) of -17.5 to -33.6 dB, output return loss (S 22 ) of -14.4 to -16.3 dB, flat forward gain (S 22 ) of 7.92 plusmn 0.23 dB, and reverse isolation (S 12 ) of -25.8 to -41.9 dB over the 3.1-10.6 GHz band of interest. A state-of-the-art noise figure (NF) of 2.5 dB was achieved at 10.5 GHz.

Hsiaochin Chen - One of the best experts on this subject based on the ideXlab platform.

  • 3 10 ghz ultra wideband low noise amplifier utilizing miller effect and inductive shunt shunt feedback technique
    IEEE Transactions on Microwave Theory and Techniques, 2007
    Co-Authors: Hsiaochin Chen, Tao Wang, Sheyshi Lu
    Abstract:

    In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase Linearity Property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.

Changzhi Chen - One of the best experts on this subject based on the ideXlab platform.

  • analysis and design of a cmos uwb lna with dual rlc branch wideband input matching network
    IEEE Transactions on Microwave Theory and Techniques, 2010
    Co-Authors: Changzhi Chen, Chichen Chen, Hongyu Yang, Guowei Huang, Sheyshi Lu
    Abstract:

    A wideband low-noise amplifier (LNA) based on the current-reused cascade configuration is proposed. The wideband input-impedance matching was achieved by taking advantage of the resistive shunt-shunt feedback in conjunction with a parallel LC load to make the input network equivalent to two parallel RLC-branches, i.e., a second-order wideband bandpass filter. Besides, both the inductive series- and shunt-peaking techniques are used for bandwidth extension. Theoretical analysis shows that both the frequency response of input matching and noise figure (NF) can be described by second-order functions with quality factors as parameters. The CMOS ultra-wideband LNA dissipates 10.34-mW power and achieves S 11 below -8.6 dB, S 22 below -10 dB, S 12 below -26 dB, flat S 21 of 12.26 ± 0.63 dB, and flat NF of 4.24 ± 0.5 dB over the 3.1-10.6-GHz band of interest. Besides, good phase Linearity Property (group-delay variation is only ±22 ps across the whole band) is also achieved. The analytical, simulated, and measured results agree well with one another.