The Experts below are selected from a list of 75 Experts worldwide ranked by ideXlab platform
D Bimberg - One of the best experts on this subject based on the ideXlab platform.
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230 s room temperature storage time and 1 14 ev hole Localization Energy in in0 5ga0 5as quantum dots on a gaas interlayer in gap with an alp barrier
Applied Physics Letters, 2015Co-Authors: Leo Bonato, T Nowozin, D Bimberg, Elisa M Sala, G Stracke, Andre Strittmatter, Mohammed N Ajour, Khaled DaqrouqAbstract:A GaP n+p-diode containing In0.5Ga0.5As quantum dots (QDs) and an AlP barrier is characterized electrically, together with two reference samples: a simple n+p-diode and an n+p-diode with AlP barrier. Localization Energy, capture cross-section, and storage time for holes in the QDs are determined using deep-level transient spectroscopy. The Localization Energy is 1.14(±0.04) eV, yielding a storage time at room temperature of 230(±60) s, which marks an improvement of 2 orders of magnitude compared to the former record value in QDs. Alternative material systems are proposed for still higher Localization energies and longer storage times.
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800 mev Localization Energy in gasb gaas al0 3ga0 7as quantum dots
Applied Physics Letters, 2013Co-Authors: T Nowozin, Leo Bonato, A Hogner, A Wiengarten, D Bimberg, Weihsun Lin, Shihyen Lin, Charles J Reyner, Baolai Liang, D L HuffakerAbstract:The Localization energies, capture cross sections, and storage times of holes in GaSb quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD sizes. The structural properties, such as height and diameter, are determined by atomic force microscopy, while the electronic properties are measured using deep-level transient spectroscopy. The various QDs exhibit varying hole Localization energies corresponding to their size. The maximum Localization Energy of 800 (±50) meV is achieved by using additional Al0.3Ga0.7As barriers. Based on an extrapolation, alternative material systems are proposed to further increase the Localization Energy and carrier storage time of QDs.
K N Houk - One of the best experts on this subject based on the ideXlab platform.
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diels alder reactions of graphene computational predictions of products and sites of reaction
Journal of the American Chemical Society, 2013Co-Authors: Silvia Osuna, Yong Liang, Robert C Haddon, K N HoukAbstract:The cycloaddition reactions and noncovalent π interactions of 2,3-dimethoxybutadiene (DMBD), 9-methylanthracene (MeA), tetracyanoethylene (TCNE), and maleic anhydride (MA) with graphene models have been investigated using density functional theory (DFT) calculations. Reaction enthalpies have been obtained to assess the reactivity and selectivity of covalent and noncovalent functionalization. Results indicate that graphene edges may be functionalized by the four reagents through cycloaddition reactions, while the interior regions cannot react. Noncovalent complexation is much more favorable than cycloaddition reactions on interior bonds of graphene. The relative reactivities of different sites in graphene are related to loss of aromaticity and can be predicted using Huckel molecular orbital (HMO) Localization Energy calculations.
T Nowozin - One of the best experts on this subject based on the ideXlab platform.
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230 s room temperature storage time and 1 14 ev hole Localization Energy in in0 5ga0 5as quantum dots on a gaas interlayer in gap with an alp barrier
Applied Physics Letters, 2015Co-Authors: Leo Bonato, T Nowozin, D Bimberg, Elisa M Sala, G Stracke, Andre Strittmatter, Mohammed N Ajour, Khaled DaqrouqAbstract:A GaP n+p-diode containing In0.5Ga0.5As quantum dots (QDs) and an AlP barrier is characterized electrically, together with two reference samples: a simple n+p-diode and an n+p-diode with AlP barrier. Localization Energy, capture cross-section, and storage time for holes in the QDs are determined using deep-level transient spectroscopy. The Localization Energy is 1.14(±0.04) eV, yielding a storage time at room temperature of 230(±60) s, which marks an improvement of 2 orders of magnitude compared to the former record value in QDs. Alternative material systems are proposed for still higher Localization energies and longer storage times.
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800 mev Localization Energy in gasb gaas al0 3ga0 7as quantum dots
Applied Physics Letters, 2013Co-Authors: T Nowozin, Leo Bonato, A Hogner, A Wiengarten, D Bimberg, Weihsun Lin, Shihyen Lin, Charles J Reyner, Baolai Liang, D L HuffakerAbstract:The Localization energies, capture cross sections, and storage times of holes in GaSb quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD sizes. The structural properties, such as height and diameter, are determined by atomic force microscopy, while the electronic properties are measured using deep-level transient spectroscopy. The various QDs exhibit varying hole Localization energies corresponding to their size. The maximum Localization Energy of 800 (±50) meV is achieved by using additional Al0.3Ga0.7As barriers. Based on an extrapolation, alternative material systems are proposed to further increase the Localization Energy and carrier storage time of QDs.
Leo Bonato - One of the best experts on this subject based on the ideXlab platform.
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230 s room temperature storage time and 1 14 ev hole Localization Energy in in0 5ga0 5as quantum dots on a gaas interlayer in gap with an alp barrier
Applied Physics Letters, 2015Co-Authors: Leo Bonato, T Nowozin, D Bimberg, Elisa M Sala, G Stracke, Andre Strittmatter, Mohammed N Ajour, Khaled DaqrouqAbstract:A GaP n+p-diode containing In0.5Ga0.5As quantum dots (QDs) and an AlP barrier is characterized electrically, together with two reference samples: a simple n+p-diode and an n+p-diode with AlP barrier. Localization Energy, capture cross-section, and storage time for holes in the QDs are determined using deep-level transient spectroscopy. The Localization Energy is 1.14(±0.04) eV, yielding a storage time at room temperature of 230(±60) s, which marks an improvement of 2 orders of magnitude compared to the former record value in QDs. Alternative material systems are proposed for still higher Localization energies and longer storage times.
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800 mev Localization Energy in gasb gaas al0 3ga0 7as quantum dots
Applied Physics Letters, 2013Co-Authors: T Nowozin, Leo Bonato, A Hogner, A Wiengarten, D Bimberg, Weihsun Lin, Shihyen Lin, Charles J Reyner, Baolai Liang, D L HuffakerAbstract:The Localization energies, capture cross sections, and storage times of holes in GaSb quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD sizes. The structural properties, such as height and diameter, are determined by atomic force microscopy, while the electronic properties are measured using deep-level transient spectroscopy. The various QDs exhibit varying hole Localization energies corresponding to their size. The maximum Localization Energy of 800 (±50) meV is achieved by using additional Al0.3Ga0.7As barriers. Based on an extrapolation, alternative material systems are proposed to further increase the Localization Energy and carrier storage time of QDs.
D L Huffaker - One of the best experts on this subject based on the ideXlab platform.
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800 mev Localization Energy in gasb gaas al0 3ga0 7as quantum dots
Applied Physics Letters, 2013Co-Authors: T Nowozin, Leo Bonato, A Hogner, A Wiengarten, D Bimberg, Weihsun Lin, Shihyen Lin, Charles J Reyner, Baolai Liang, D L HuffakerAbstract:The Localization energies, capture cross sections, and storage times of holes in GaSb quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD sizes. The structural properties, such as height and diameter, are determined by atomic force microscopy, while the electronic properties are measured using deep-level transient spectroscopy. The various QDs exhibit varying hole Localization energies corresponding to their size. The maximum Localization Energy of 800 (±50) meV is achieved by using additional Al0.3Ga0.7As barriers. Based on an extrapolation, alternative material systems are proposed to further increase the Localization Energy and carrier storage time of QDs.
