The Experts below are selected from a list of 53976 Experts worldwide ranked by ideXlab platform
Wang Kaiyou - One of the best experts on this subject based on the ideXlab platform.
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Complementary Lateral-Spin-Orbit Building Blocks for Programmable Logic and In-Memory Computing
'Wiley', 2020Co-Authors: Rushforth Andrew, Zhang Nan, Yi Cao, Li Yucai, Ji Yang, Zheng Houzhi, Wang KaiyouAbstract:Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated Logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean Logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful Logic operations, including material implication (IMP) gate, were also demonstrated by regarding the magnetization state as a Logic Input. Our complementary LSOT building blocks provide a potentially applicable way towards future efficient spin Logics and in-memory computing architectures.
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Complementary lateral-spin-orbit building blocks for programmable Logic and in-memory computing
'Wiley', 2020Co-Authors: Zhang Nan, Yi Cao, Li Yucai, Ji Yang, Zheng Houzhi, Rushforth, Andrew W., Wang KaiyouAbstract:Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated Logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean Logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful Logic operations, including the material implication (IMP) gate, were also demonstrated by regarding the magnetization state as a Logic Input. Our complementary LSOT building blocks provide an applicable way towards future efficient spin Logics and in-memory computing architectures.Comment: 22 pages, 4 figure
Hyun Cheol Koo - One of the best experts on this subject based on the ideXlab platform.
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reconfigurable spin Logic device using electrochemical potentials
Applied Physics Letters, 2019Co-Authors: Joo Hyeon Lee, Seokmin Hong, Hyungjun Kim, Joonyeon Chang, Hyun Cheol KooAbstract:A reconfigurable spin Logic device is realized using an asymmetric quantum well displaying strong Rashba spin splitting. This design is developed to remove the inefficient spin injection process and to utilize the Rashba-effect-induced electrochemical potential shifts. In this Logic device, two ferromagnetic electrodes were deposited on two quantum well channels, respectively. The magnetization orientations of the ferromagnetic electrodes determine the function of the Logic operation, and the polarity of the charge current is assigned to the Logic Input. The output voltage corresponds to the difference between potentials of the two ferromagnetic terminals, which read the electrochemical potentials of the individual quantum well channels. The detected signal induced by the Rashba channel is observed to be two orders of magnitude greater than the spin injection signal from the ferromagnetic source into the semiconductor channel. Four Logic functions, i.e., the AND, OR, NAND, and NOR operations, are illustrated for a single device up to room temperature.
Zhang Nan - One of the best experts on this subject based on the ideXlab platform.
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Complementary Lateral-Spin-Orbit Building Blocks for Programmable Logic and In-Memory Computing
'Wiley', 2020Co-Authors: Rushforth Andrew, Zhang Nan, Yi Cao, Li Yucai, Ji Yang, Zheng Houzhi, Wang KaiyouAbstract:Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated Logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean Logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful Logic operations, including material implication (IMP) gate, were also demonstrated by regarding the magnetization state as a Logic Input. Our complementary LSOT building blocks provide a potentially applicable way towards future efficient spin Logics and in-memory computing architectures.
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Complementary lateral-spin-orbit building blocks for programmable Logic and in-memory computing
'Wiley', 2020Co-Authors: Zhang Nan, Yi Cao, Li Yucai, Ji Yang, Zheng Houzhi, Rushforth, Andrew W., Wang KaiyouAbstract:Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated Logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean Logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful Logic operations, including the material implication (IMP) gate, were also demonstrated by regarding the magnetization state as a Logic Input. Our complementary LSOT building blocks provide an applicable way towards future efficient spin Logics and in-memory computing architectures.Comment: 22 pages, 4 figure
Joo Hyeon Lee - One of the best experts on this subject based on the ideXlab platform.
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reconfigurable spin Logic device using electrochemical potentials
Applied Physics Letters, 2019Co-Authors: Joo Hyeon Lee, Seokmin Hong, Hyungjun Kim, Joonyeon Chang, Hyun Cheol KooAbstract:A reconfigurable spin Logic device is realized using an asymmetric quantum well displaying strong Rashba spin splitting. This design is developed to remove the inefficient spin injection process and to utilize the Rashba-effect-induced electrochemical potential shifts. In this Logic device, two ferromagnetic electrodes were deposited on two quantum well channels, respectively. The magnetization orientations of the ferromagnetic electrodes determine the function of the Logic operation, and the polarity of the charge current is assigned to the Logic Input. The output voltage corresponds to the difference between potentials of the two ferromagnetic terminals, which read the electrochemical potentials of the individual quantum well channels. The detected signal induced by the Rashba channel is observed to be two orders of magnitude greater than the spin injection signal from the ferromagnetic source into the semiconductor channel. Four Logic functions, i.e., the AND, OR, NAND, and NOR operations, are illustrated for a single device up to room temperature.
K Matsuyama - One of the best experts on this subject based on the ideXlab platform.
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binary data coding with domain wall for spin wave based Logic devices
Journal of Applied Physics, 2012Co-Authors: Keita Nagai, Y Cao, T Tanaka, K MatsuyamaAbstract:An application of the domain wall (DW) to a data coding scheme in spin wave (SW) based Logic devices is numerically investigated with micromagnetic simulations. Ferromagnetic nanowires with the perpendicular magnetization are assumed as self-biasing SW guides. The inductive output voltage for the superposed spin wave packets, emitted with the pulsed microwave currents, are manipulated with the SW phase shift caused by the interaction with the DW. The binary Logic Inputs are coded with the existence (“1”) or absence (“0”) of the DW at the pinning sites defined by local modulation of the perpendicular anisotropy in ferromagnetic nanowires. The exclusive-or (EXOR) Logic operation is successfully demonstrated with an order of different output signal level for the Logic Input of “00 (11)” and “01(10)”, encoded by DWs in a nanowire with lateral dimension of 100 × 100 × 2560 nm3.
