The Experts below are selected from a list of 85419 Experts worldwide ranked by ideXlab platform
Masaru Hori - One of the best experts on this subject based on the ideXlab platform.
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surface Loss Probability of h radicals on silicon thin films in sih 4 h 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
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Surface Loss Probability of H radicals on silicon thin films in SiH 4 /H 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
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Surface Loss Probability of Nitrogen Atom on Stainless-Steel in N2 Plasma Afterglow
Japanese Journal of Applied Physics, 2010Co-Authors: Seigo Takashima, Keigo Takeda, Mineo Hiramatsu, Satoshi Kato, Masaru HoriAbstract:We investigated the Loss kinetics of nitrogen (N) atoms in a N2 plasma afterglow using a vacuum ultraviolet absorption spectroscopy technique with an atmospheric-pressure microdischarge hollow cathode lamp. The decay curves of N atom density were fitted with single exponential functions at pressures from 1.33 to 13.3 Pa. The dependence of the decay time constant on the pressure showed that the N atoms were predominantly lost through diffusion to the wall surface. The surface Loss Probability of N atoms on stainless-steel based on the decay time constant as a function of pressure was estimated to be 0.03.
Yusuke Abe - One of the best experts on this subject based on the ideXlab platform.
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Surface Loss Probability of H radicals on silicon thin films in SiH 4 /H 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
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surface Loss Probability of h radicals on silicon thin films in sih 4 h 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
Atsushi Fukushima - One of the best experts on this subject based on the ideXlab platform.
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Surface Loss Probability of H radicals on silicon thin films in SiH 4 /H 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
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surface Loss Probability of h radicals on silicon thin films in sih 4 h 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
Makoto Sekine - One of the best experts on this subject based on the ideXlab platform.
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Surface Loss Probability of H radicals on silicon thin films in SiH 4 /H 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
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surface Loss Probability of h radicals on silicon thin films in sih 4 h 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
Kenji Ishikawa - One of the best experts on this subject based on the ideXlab platform.
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Surface Loss Probability of H radicals on silicon thin films in SiH 4 /H 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
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surface Loss Probability of h radicals on silicon thin films in sih 4 h 2 plasma
Journal of Applied Physics, 2013Co-Authors: Yusuke Abe, Keigo Takeda, Atsushi Fukushima, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru HoriAbstract:The surface Loss Probability of H radicals was investigated in SiH4/H2 plasma using vacuum ultraviolet resonance absorption spectroscopy. The surface Loss Probability was calculated from the decay curve of the H radical density in the plasma afterglow and increased with the SiH4 flow rate. Silicon thin films deposited on the chamber wall were analyzed to investigate the relation between the surface Loss Probability and the surface condition. The surface reaction of H radicals is influenced by deposition precursors, such as SiH3 radicals. The density of H radicals significantly decreased with heating of the chamber wall up to 473 K. The surface Loss Probability of H radicals was estimated to be ca. 1 at 473 K. Quantitative measurements of the surface Loss Probability of H radicals in SiH4/H2 plasma are expected to be particularly important for understanding the surface reactions that occur during the deposition of silicon thin films.
