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Prasit Thongbai - One of the best experts on this subject based on the ideXlab platform.
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enhanced dielectric properties with a significantly reduced Loss Tangent in mg2 al3 co doped cacu3ti4o12 ceramics dft and experimental investigations
RSC Advances, 2021Co-Authors: Jakkree Boonlakhorn, Prasit Thongbai, Jedsada Manyam, Sriprajak Krongsuk, Pornjuk SrepusharawootAbstract:CaCu3Ti4O12 and CaCu2.95Mg0.05Ti3.95Al0.05O12 ceramics were fabricated via a solid-state reaction method. A single-phase of CaCu3Ti4O12 was found in these two ceramics. Very great grain size expansion was produced by co-doping with Mg2+ and Al3+. DFT results indicate that both Mg and Al atoms preferentially occupy Cu sites, creating liquid-phase sintering decomposition at grain boundary layers. Very high dielectric permittivity of ∼58 397 and low Loss Tangent of about 0.047 were achieved in a CaCu2.95Mg0.05Ti3.95Al0.05O12 ceramic. Additionally, the temperature stability of the dielectric response was improved. Better dielectric properties in the co-doped ceramic have possible origins from enhanced grain boundary responses, especially from the influences of metastable phases and oxygen enrichment at the grain boundaries. Experimental and computational results indicate that the coLossal dielectric properties in CaCu3Ti4O12 ceramics might be correlated with an internal barrier layer capacitor structure.
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suppressing Loss Tangent with significantly enhanced dielectric permittivity of poly vinylidene fluoride by filling with au na1 2y1 2cu3ti4o12 hybrid particles
RSC Advances, 2020Co-Authors: Pornsawan Kumonsa, Nutthakritta Phromviyo, Prasit ThongbaiAbstract:Three-phase gold nanoparticle–Na1/2Y1/2Cu3Ti4O12 (Au–NYCTO)/poly(vinylidene fluoride) (PVDF) composites with 0.095–0.487 hybrid particle volume fractions (f) were fabricated. Au nanoparticles with a diameter of ∼10 nm were decorated on the surfaces of high-permittivity NYCTO particles using a modified Turkevich's method. The polar β-PVDF phase was confirmed to exist in the composites. Significantly enhanced dielectric permittivity of ∼98 (at 1 kHz) was obtained in the Au–NYCTO/PVDF composite with fAu–NYCTO = 0.487, while the Loss Tangent was suppressed to 0.09. Abrupt changes in the dielectric and electrical properties, which signified percolation behavior, were not observed even when fAu–NYCTO = 0.487. Using the effective medium percolation theory model, the percolation threshold (fc) was predicted to be at fAu–NYCTO = 0.69, at which fAu was estimated to ∼0.19 and close to the theoretical fc value for the conductor–insulator composites (fc = 0.16). A largely enhanced dielectric response in the Au–NYCTO/PVDF composites was contributed by the interfacial polarization effect and a high permittivity of the NYCTO ceramic filler. Au nanoparticles can produce the local electric field in the composites, making the dipole moments in the β-PVDF phase and NYCTO particles align with the direction of the electric field.
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na1 3ca1 3bi1 3cu3ti4o12 ni nio poly vinylidene fluoride three phase polymer composites with high dielectric permittivity and low Loss Tangent
Results in physics, 2020Co-Authors: Pornsawan Kumonsa, Nutthakritta Phromviyo, Prasit ThongbaiAbstract:Abstract High permittivity and low Loss Tangent polymer matrix composites containing a low loading of filler are desirable for practical applications in modern electronic devices. In this work, greatly improved dielectric properties of poly(vinylidene fluoride) (PVDF) were accomplished by incorporating high–permittivity Na1/3Ca1/3Bi1/3Cu3Ti4O12 (NCBCTO) ceramic particles with sizes of ~0.5–1.5 μm coupled with ~1.0–2.0 μm diameter core–shell Ni@NiO particles. Phase composition, crystal structures, morphology, microstructure, and dielectric properties of NCBCTO–Ni Ni@NiO/PVDF composites were investigated. A nonpolar α–phase and polar β– and γ–phases were detected in the PVDF matrix and NCBCTO–Ni/PVDF composites. Random dispersions of small clusters of NCBCTO and Ni particles were observed in the PVDF polymer matrix. Significantly enhanced dielectric permittivity, ≈279, which was higher than that of pure PVDF polymer by a factor of ≈27, was achieved. Surprisingly, the dielectric Loss Tangent was suppressed to a very low value of ≈0.07 at 1 kHz. The dielectric properties of the NCBCTO-Ni@NiO/PVDF composites are discussed based on the interfacial polarization at the internal interfaces.
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improved dielectric properties of cacu 3 x sn x ti 4 o 12 ceramics with high permittivity and reduced Loss Tangent
Journal of Materials Science: Materials in Electronics, 2020Co-Authors: Jakkree Boonlakhorn, Narong Chanlek, Pornjuk Srepusharawoot, Prasit ThongbaiAbstract:The structural and electrical parameters of sintered CaCu3−xSnxTi4O12 ceramics (x = 0, 0.05, and 0.10) were systematically investigated. Single-phase CaCu3Ti4O12 was detected in all-ceramic samples. The grain size in the CaCu3−xSnxTi4O12 ceramics decreased as x increased. A high dielectric permittivity of ~ 6736–19,992 and a reduced Loss Tangent of ~ 0.028–0.033 was obtained in the ceramics with x = 0.05 and 0.10. In addition, the temperature stability of the dielectric permittivity and Loss Tangent also improved by doping with Sn ions. The dielectric response of the CaCu3−xSnxTi4O12 ceramics was closely associated with an internal barrier layer capacitor model. X-ray photoelectron spectroscopy indicated the existence of mixed Cu+/Cu2+ and Ti3+/Ti4+ in all ceramic samples, which promoted the hopping of electrons between Cu+ ↔ Cu2+ and Ti3+ ↔ Ti4+ and was the possible origin of semiconducting grains in the samples. The presence of Sn2+ was detected by X-ray photoelectron spectroscopy indicated a reduction in the oxidation state of the Sn ions due to the charge compensation that occurred for the replacement of Cu host sites.
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giant dielectric permittivity with low Loss Tangent and excellent non ohmic properties of the na sr2 y3 cu3ti4o12 ceramic system
Ceramics International, 2020Co-Authors: Pariwat Saengvong, Jakkree Boonlakhorn, Narong Chanlek, Bundit Putasaeng, Prasit ThongbaiAbstract:Abstract The (Na+, Sr2+, Y3+)Cu3Ti4O12 ceramic system was successfully synthesized using the solid-state reaction method; further, its crystal structure and microstructure were studied. The main phase associated with the CaCu3Ti4O12 like-structure was detected. A dense ceramic microstructure with segregation of Cu−rich phase at the grain boundaries (GBs) was observed in the sintered ceramics. A significantly high range of dielectric permittivity (1.63 × 103−2.34 × 104), and a low range of dielectric Loss Tangent (0.035–0.075) were observed for the sintered (Na1/2Y1/2)1-xSrxCu3Ti4O12 ceramics at x = 0.1 and 0.2. Further, a steep enhancement of non-Ohmic characteristics was achieved along with the high breakdown electric field of ~9.12 kV cm−1 and the nonlinear coefficient of ~84.7 for the (Na1/2Y1/2)0.90Sr0·10Cu3Ti4O12 ceramic sintered at 1060 °C for 18 h. The presence of heterogeneous microstructures, which are comprised of semiconducting grains and insulating GBs with, respectively, conduction activation energies of 0.05–0.09 eV and ~0.6 eV, was confirmed by impedance spectroscopy; the results displayed a large dielectric response and nonlinear electrical properties. The mixing of Cu+/Cu2+/Cu3+ and Ti3+/Ti4+ was confirmed by X−ray photoelectron spectroscopy, suggesting the presence of a semiconducting state inside the grains.
Guozheng Liang - One of the best experts on this subject based on the ideXlab platform.
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preparation and mechanism of high energy density cyanate ester composites with ultralow Loss Tangent and higher permittivity through building a multilayered structure with conductive dielectric and insulating layers
Journal of Physical Chemistry C, 2019Co-Authors: Ruijua Gong, Li Yua, Guozheng LiangAbstract:High energy density polymer composites with ultralow Loss Tangent and higher permittivity for embedded capacitors are urgently required by new generation printed circuit boards. Herein, starting from a conductive layer (C-layer) with negative dielectric permittivity, a dielectric layer (D-layer) with positive dielectric permittivity, and insulating layer (I-layer), six multilayer composites, coded as DCI, CDI, IDCI, DCICD, DCIDC, and CDIDC according to their spatial stacking order, were prepared; among them, the C-layer is a graphite/polyvinylidene fluoride composite, the D-layer is a reduced graphene oxide–(K0.5Na0.5)NbO3/cyanate ester composite, and the I-layer is a boron nitride/cyanate ester composite. The effects of relative position and spatial stacking order of three-, four- and five-layer structures on performances were intensively discussed for the first time. Results show that CDIDC has the highest dielectric permittivity (886, 100 Hz) and biggest dielectric ratio of dielectric permittivity to l...
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preparation and mechanism of high energy density cyanate ester composites with ultralow Loss Tangent and higher permittivity through building a multilayered structure with conductive dielectric and insulating layers
The Journal of Physical Chemistry, 2019Co-Authors: Ruijua Gong, Li Yua, Guozheng LiangAbstract:High energy density polymer composites with ultralow Loss Tangent and higher permittivity for embedded capacitors are urgently required by new generation printed circuit boards. Herein, starting from a conductive layer (C-layer) with negative dielectric permittivity, a dielectric layer (D-layer) with positive dielectric permittivity, and insulating layer (I-layer), six multilayer composites, coded as DCI, CDI, IDCI, DCICD, DCIDC, and CDIDC according to their spatial stacking order, were prepared; among them, the C-layer is a graphite/polyvinylidene fluoride composite, the D-layer is a reduced graphene oxide–(K₀.₅Na₀.₅)NbO₃/cyanate ester composite, and the I-layer is a boron nitride/cyanate ester composite. The effects of relative position and spatial stacking order of three-, four- and five-layer structures on performances were intensively discussed for the first time. Results show that CDIDC has the highest dielectric permittivity (886, 100 Hz) and biggest dielectric ratio of dielectric permittivity to Loss Tangent (R = 42275) over multilayered composites based on conductor/polymer reported so far. Besides this, compared to conventional conductor/polymer composite, CDIDC has 72% and 720% higher breakdown strength and energy density, respectively. The mechanism behind outstanding performances reveals that breakdown strength is determined by the position of I-layer, while dielectric permittivity is mainly controlled by the order of C-layer and D-layer when the position of I-layer is fixed.
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Preparation and Mechanism of High Energy Density Cyanate Ester Composites with Ultralow Loss Tangent and Higher Permittivity through Building a Multilayered Structure with Conductive, Dielectric, and Insulating Layers
2019Co-Authors: Ruijuan Gong, Li Yuan, Guozheng LiangAbstract:High energy density polymer composites with ultralow Loss Tangent and higher permittivity for embedded capacitors are urgently required by new generation printed circuit boards. Herein, starting from a conductive layer (C-layer) with negative dielectric permittivity, a dielectric layer (D-layer) with positive dielectric permittivity, and insulating layer (I-layer), six multilayer composites, coded as DCI, CDI, IDCI, DCICD, DCIDC, and CDIDC according to their spatial stacking order, were prepared; among them, the C-layer is a graphite/polyvinylidene fluoride composite, the D-layer is a reduced graphene oxide–(K0.5Na0.5)NbO3/cyanate ester composite, and the I-layer is a boron nitride/cyanate ester composite. The effects of relative position and spatial stacking order of three-, four- and five-layer structures on performances were intensively discussed for the first time. Results show that CDIDC has the highest dielectric permittivity (886, 100 Hz) and biggest dielectric ratio of dielectric permittivity to Loss Tangent (R = 42275) over multilayered composites based on conductor/polymer reported so far. Besides this, compared to conventional conductor/polymer composite, CDIDC has 72% and 720% higher breakdown strength and energy density, respectively. The mechanism behind outstanding performances reveals that breakdown strength is determined by the position of I-layer, while dielectric permittivity is mainly controlled by the order of C-layer and D-layer when the position of I-layer is fixed
Ruijua Gong - One of the best experts on this subject based on the ideXlab platform.
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preparation and mechanism of high energy density cyanate ester composites with ultralow Loss Tangent and higher permittivity through building a multilayered structure with conductive dielectric and insulating layers
Journal of Physical Chemistry C, 2019Co-Authors: Ruijua Gong, Li Yua, Guozheng LiangAbstract:High energy density polymer composites with ultralow Loss Tangent and higher permittivity for embedded capacitors are urgently required by new generation printed circuit boards. Herein, starting from a conductive layer (C-layer) with negative dielectric permittivity, a dielectric layer (D-layer) with positive dielectric permittivity, and insulating layer (I-layer), six multilayer composites, coded as DCI, CDI, IDCI, DCICD, DCIDC, and CDIDC according to their spatial stacking order, were prepared; among them, the C-layer is a graphite/polyvinylidene fluoride composite, the D-layer is a reduced graphene oxide–(K0.5Na0.5)NbO3/cyanate ester composite, and the I-layer is a boron nitride/cyanate ester composite. The effects of relative position and spatial stacking order of three-, four- and five-layer structures on performances were intensively discussed for the first time. Results show that CDIDC has the highest dielectric permittivity (886, 100 Hz) and biggest dielectric ratio of dielectric permittivity to l...
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preparation and mechanism of high energy density cyanate ester composites with ultralow Loss Tangent and higher permittivity through building a multilayered structure with conductive dielectric and insulating layers
The Journal of Physical Chemistry, 2019Co-Authors: Ruijua Gong, Li Yua, Guozheng LiangAbstract:High energy density polymer composites with ultralow Loss Tangent and higher permittivity for embedded capacitors are urgently required by new generation printed circuit boards. Herein, starting from a conductive layer (C-layer) with negative dielectric permittivity, a dielectric layer (D-layer) with positive dielectric permittivity, and insulating layer (I-layer), six multilayer composites, coded as DCI, CDI, IDCI, DCICD, DCIDC, and CDIDC according to their spatial stacking order, were prepared; among them, the C-layer is a graphite/polyvinylidene fluoride composite, the D-layer is a reduced graphene oxide–(K₀.₅Na₀.₅)NbO₃/cyanate ester composite, and the I-layer is a boron nitride/cyanate ester composite. The effects of relative position and spatial stacking order of three-, four- and five-layer structures on performances were intensively discussed for the first time. Results show that CDIDC has the highest dielectric permittivity (886, 100 Hz) and biggest dielectric ratio of dielectric permittivity to Loss Tangent (R = 42275) over multilayered composites based on conductor/polymer reported so far. Besides this, compared to conventional conductor/polymer composite, CDIDC has 72% and 720% higher breakdown strength and energy density, respectively. The mechanism behind outstanding performances reveals that breakdown strength is determined by the position of I-layer, while dielectric permittivity is mainly controlled by the order of C-layer and D-layer when the position of I-layer is fixed.
Jakkree Boonlakhorn - One of the best experts on this subject based on the ideXlab platform.
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enhanced dielectric properties with a significantly reduced Loss Tangent in mg2 al3 co doped cacu3ti4o12 ceramics dft and experimental investigations
RSC Advances, 2021Co-Authors: Jakkree Boonlakhorn, Prasit Thongbai, Jedsada Manyam, Sriprajak Krongsuk, Pornjuk SrepusharawootAbstract:CaCu3Ti4O12 and CaCu2.95Mg0.05Ti3.95Al0.05O12 ceramics were fabricated via a solid-state reaction method. A single-phase of CaCu3Ti4O12 was found in these two ceramics. Very great grain size expansion was produced by co-doping with Mg2+ and Al3+. DFT results indicate that both Mg and Al atoms preferentially occupy Cu sites, creating liquid-phase sintering decomposition at grain boundary layers. Very high dielectric permittivity of ∼58 397 and low Loss Tangent of about 0.047 were achieved in a CaCu2.95Mg0.05Ti3.95Al0.05O12 ceramic. Additionally, the temperature stability of the dielectric response was improved. Better dielectric properties in the co-doped ceramic have possible origins from enhanced grain boundary responses, especially from the influences of metastable phases and oxygen enrichment at the grain boundaries. Experimental and computational results indicate that the coLossal dielectric properties in CaCu3Ti4O12 ceramics might be correlated with an internal barrier layer capacitor structure.
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improved dielectric properties of cacu 3 x sn x ti 4 o 12 ceramics with high permittivity and reduced Loss Tangent
Journal of Materials Science: Materials in Electronics, 2020Co-Authors: Jakkree Boonlakhorn, Narong Chanlek, Pornjuk Srepusharawoot, Prasit ThongbaiAbstract:The structural and electrical parameters of sintered CaCu3−xSnxTi4O12 ceramics (x = 0, 0.05, and 0.10) were systematically investigated. Single-phase CaCu3Ti4O12 was detected in all-ceramic samples. The grain size in the CaCu3−xSnxTi4O12 ceramics decreased as x increased. A high dielectric permittivity of ~ 6736–19,992 and a reduced Loss Tangent of ~ 0.028–0.033 was obtained in the ceramics with x = 0.05 and 0.10. In addition, the temperature stability of the dielectric permittivity and Loss Tangent also improved by doping with Sn ions. The dielectric response of the CaCu3−xSnxTi4O12 ceramics was closely associated with an internal barrier layer capacitor model. X-ray photoelectron spectroscopy indicated the existence of mixed Cu+/Cu2+ and Ti3+/Ti4+ in all ceramic samples, which promoted the hopping of electrons between Cu+ ↔ Cu2+ and Ti3+ ↔ Ti4+ and was the possible origin of semiconducting grains in the samples. The presence of Sn2+ was detected by X-ray photoelectron spectroscopy indicated a reduction in the oxidation state of the Sn ions due to the charge compensation that occurred for the replacement of Cu host sites.
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giant dielectric permittivity with low Loss Tangent and excellent non ohmic properties of the na sr2 y3 cu3ti4o12 ceramic system
Ceramics International, 2020Co-Authors: Pariwat Saengvong, Jakkree Boonlakhorn, Narong Chanlek, Bundit Putasaeng, Prasit ThongbaiAbstract:Abstract The (Na+, Sr2+, Y3+)Cu3Ti4O12 ceramic system was successfully synthesized using the solid-state reaction method; further, its crystal structure and microstructure were studied. The main phase associated with the CaCu3Ti4O12 like-structure was detected. A dense ceramic microstructure with segregation of Cu−rich phase at the grain boundaries (GBs) was observed in the sintered ceramics. A significantly high range of dielectric permittivity (1.63 × 103−2.34 × 104), and a low range of dielectric Loss Tangent (0.035–0.075) were observed for the sintered (Na1/2Y1/2)1-xSrxCu3Ti4O12 ceramics at x = 0.1 and 0.2. Further, a steep enhancement of non-Ohmic characteristics was achieved along with the high breakdown electric field of ~9.12 kV cm−1 and the nonlinear coefficient of ~84.7 for the (Na1/2Y1/2)0.90Sr0·10Cu3Ti4O12 ceramic sintered at 1060 °C for 18 h. The presence of heterogeneous microstructures, which are comprised of semiconducting grains and insulating GBs with, respectively, conduction activation energies of 0.05–0.09 eV and ~0.6 eV, was confirmed by impedance spectroscopy; the results displayed a large dielectric response and nonlinear electrical properties. The mixing of Cu+/Cu2+/Cu3+ and Ti3+/Ti4+ was confirmed by X−ray photoelectron spectroscopy, suggesting the presence of a semiconducting state inside the grains.
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cacu3ti4o12 in0 05nb0 05ti0 90o12 composite ceramics an effectively improved method to reduce the dielectric Loss Tangent and retain high dielectric permittivity
Materials Research Bulletin, 2020Co-Authors: Sornram Otatawong, Jakkree Boonlakhorn, Supamas Danwittayakul, Prasit ThongbaiAbstract:Abstract CaCu3Ti4O12/In0.05Nb0.05Ti0.90O12 (CCTO/INTO) composite ceramics with volume fraction ratios of 0.9/0.1 (10 % INTO) and 0.8/0.2 (20 % INTO) were prepared via a solid-state reaction method. XRD results indicated the mixed CaCu3Ti4O12 and TiO2 phases in the CCTO/INTO composite ceramics. The lattice parameter of the CCTO phase increased as the INTO composition increased, indicating the entry of some Nb 5+ and/or In3+ ions into the CCTO lattice structure. The mean grain size of the CCTO/INTO composite ceramics was smaller than that of the CCTO ceramic, demonstrating that the grain boundary mobility of the CCTO phase was decreased by the INTO particles. Improved dielectric properties were achieved with a low dielectric Loss Tangent (0.029-0.046) in the CCTO/INTO composite ceramics, while high dielectric permittivities (5.0 × 10 3-8.6 × 103) were achieved. Nonlinear J-E behavior was demonstrated in the all-ceramic samples. The dielectric and nonlinear properties of the CCTO and CCTO/INTO composite ceramics originated from an internal barrier layer capacitor effect.
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a novel approach to achieve high dielectric permittivity and low Loss Tangent in cacu3ti4o12 ceramics by co doping with sm3 and mg2 ions
Journal of The European Ceramic Society, 2015Co-Authors: Jakkree Boonlakhorn, Pinit Kidkhunthod, Prasit ThongbaiAbstract:Abstract A novel strategy to improve the dielectric properties of CaCu 3 Ti 4 O 12 ceramics was proposed by co-doping with Sm 3+ and Mg 2+ . Sm 3+ substituted in Ca 2+ sites can effectively suppress the grain growth, achieving a fine grained ceramic microstructure. Mg 2+ was selected to be substituted into Cu 2+ sites to enhance the grain boundary (GB) resistivity for reducing the Loss Tangent (tanδ). High dielectric permittivity ϵ ′ ≈ 1.25 × 10 4 and low tanδ ≈ 0.039 at 1 kHz were successfully accomplished in a Ca 0.925 Sm 0.05 Cu 2.70 Mg 0.30 Ti 4 O 12 ceramic. Non-Ohmic properties were also enhanced. A slight increase in Ti 3+ /Ti 4+ ratio in (Sm + Mg) co-doped CaCu 3 Ti 4 O 12 ceramics was confirmed by the X-ray absorption near edge structure. Changes in tanδ values for all the co-doped ceramics were very consistent with their variations in GB resistance. The dielectric and non-Ohmic properties of co-doped ceramics were significantly improved by tuning both the geometric and intrinsic factors, i.e., increasing the density of GB layer and enhancing the GB resistance, respectively.
Li Yua - One of the best experts on this subject based on the ideXlab platform.
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preparation and mechanism of high energy density cyanate ester composites with ultralow Loss Tangent and higher permittivity through building a multilayered structure with conductive dielectric and insulating layers
Journal of Physical Chemistry C, 2019Co-Authors: Ruijua Gong, Li Yua, Guozheng LiangAbstract:High energy density polymer composites with ultralow Loss Tangent and higher permittivity for embedded capacitors are urgently required by new generation printed circuit boards. Herein, starting from a conductive layer (C-layer) with negative dielectric permittivity, a dielectric layer (D-layer) with positive dielectric permittivity, and insulating layer (I-layer), six multilayer composites, coded as DCI, CDI, IDCI, DCICD, DCIDC, and CDIDC according to their spatial stacking order, were prepared; among them, the C-layer is a graphite/polyvinylidene fluoride composite, the D-layer is a reduced graphene oxide–(K0.5Na0.5)NbO3/cyanate ester composite, and the I-layer is a boron nitride/cyanate ester composite. The effects of relative position and spatial stacking order of three-, four- and five-layer structures on performances were intensively discussed for the first time. Results show that CDIDC has the highest dielectric permittivity (886, 100 Hz) and biggest dielectric ratio of dielectric permittivity to l...
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preparation and mechanism of high energy density cyanate ester composites with ultralow Loss Tangent and higher permittivity through building a multilayered structure with conductive dielectric and insulating layers
The Journal of Physical Chemistry, 2019Co-Authors: Ruijua Gong, Li Yua, Guozheng LiangAbstract:High energy density polymer composites with ultralow Loss Tangent and higher permittivity for embedded capacitors are urgently required by new generation printed circuit boards. Herein, starting from a conductive layer (C-layer) with negative dielectric permittivity, a dielectric layer (D-layer) with positive dielectric permittivity, and insulating layer (I-layer), six multilayer composites, coded as DCI, CDI, IDCI, DCICD, DCIDC, and CDIDC according to their spatial stacking order, were prepared; among them, the C-layer is a graphite/polyvinylidene fluoride composite, the D-layer is a reduced graphene oxide–(K₀.₅Na₀.₅)NbO₃/cyanate ester composite, and the I-layer is a boron nitride/cyanate ester composite. The effects of relative position and spatial stacking order of three-, four- and five-layer structures on performances were intensively discussed for the first time. Results show that CDIDC has the highest dielectric permittivity (886, 100 Hz) and biggest dielectric ratio of dielectric permittivity to Loss Tangent (R = 42275) over multilayered composites based on conductor/polymer reported so far. Besides this, compared to conventional conductor/polymer composite, CDIDC has 72% and 720% higher breakdown strength and energy density, respectively. The mechanism behind outstanding performances reveals that breakdown strength is determined by the position of I-layer, while dielectric permittivity is mainly controlled by the order of C-layer and D-layer when the position of I-layer is fixed.
