The Experts below are selected from a list of 741 Experts worldwide ranked by ideXlab platform
Nobuo Sasaki - One of the best experts on this subject based on the ideXlab platform.
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high performance low temperature polycrystalline silicon thin film transistors on non alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2004Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Tatsuya Kakehi, Yoshiki Ebiko, Nobuo SasakiAbstract:High performance low temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) with large grains were created using diode pumped solid state (DPSS) continuous wave (CW) laser lateral crystallization (CLC), employing fabrication processes at 450°C. Field-effect mobilities of 566 cm2/Vs for the n-channel and 200 cm2/Vs for the p-channel were obtained for a thick Si film (100–150 nm) on a 300×300 mm non-alkaline glass substrate. The high performance of the TFTs is attributed to the predominantly (100)-oriented very large grains. With a decreasing Si-film thickness, the grain size decreases, and the surface orientation of the grain changes from (100) to other orientations. These effects lead to reduced field-effect mobility with decreasing Si-film thickness, but it is easy to obtain a high field-effect mobility of over 300 cm2/Vs, even with a 50 nm thick Si film, without special processing techniques. A complementary metal oxide semiconductor (CMOS) ring oscillator was fabricated using a thin Si film 65 nm thick to demonstrate the high circuit performance of CLC poly-Si TFTs by applying the simplest CMOS process technology. A delay of 400 ps/stage at a gate length of 1.5 µm and a supply voltage of Vdd=5.0 (V) was produced on a large non-alkaline glass substrate utilizing a fabrication temperature of 450°C. This crystallization method will lead to the fabrication of high-performance and cheap Si-LSI Circuits on large non-alkaline glass substrates.
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high performance polycrystalline silicon thin film transistors on non alkali glass produced using continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2002Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Nobuo SasakiAbstract:We have developed high-performance polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a field-effect mobility of 566 cm2/Vs for n-channel TFT and 200 cm2/Vs for p-channel TFT on 300 mm×300 mm non-alkali glass substrate. The TFTs were developed using a stable diode pumped solid state (DPSS) continuous-wave laser lateral crystallization (CLC) method at a temperature below 450°C. The high performance of the TFTs was attributed to the very large predominantly (100)-oriented grain. This crystallization method will enable high-performance Si-LSI Circuits to be fabricated on large non-alkali glass substrates.
Akito Hara - One of the best experts on this subject based on the ideXlab platform.
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high performance low temperature polycrystalline silicon thin film transistors on non alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2004Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Tatsuya Kakehi, Yoshiki Ebiko, Nobuo SasakiAbstract:High performance low temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) with large grains were created using diode pumped solid state (DPSS) continuous wave (CW) laser lateral crystallization (CLC), employing fabrication processes at 450°C. Field-effect mobilities of 566 cm2/Vs for the n-channel and 200 cm2/Vs for the p-channel were obtained for a thick Si film (100–150 nm) on a 300×300 mm non-alkaline glass substrate. The high performance of the TFTs is attributed to the predominantly (100)-oriented very large grains. With a decreasing Si-film thickness, the grain size decreases, and the surface orientation of the grain changes from (100) to other orientations. These effects lead to reduced field-effect mobility with decreasing Si-film thickness, but it is easy to obtain a high field-effect mobility of over 300 cm2/Vs, even with a 50 nm thick Si film, without special processing techniques. A complementary metal oxide semiconductor (CMOS) ring oscillator was fabricated using a thin Si film 65 nm thick to demonstrate the high circuit performance of CLC poly-Si TFTs by applying the simplest CMOS process technology. A delay of 400 ps/stage at a gate length of 1.5 µm and a supply voltage of Vdd=5.0 (V) was produced on a large non-alkaline glass substrate utilizing a fabrication temperature of 450°C. This crystallization method will lead to the fabrication of high-performance and cheap Si-LSI Circuits on large non-alkaline glass substrates.
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high performance polycrystalline silicon thin film transistors on non alkali glass produced using continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2002Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Nobuo SasakiAbstract:We have developed high-performance polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a field-effect mobility of 566 cm2/Vs for n-channel TFT and 200 cm2/Vs for p-channel TFT on 300 mm×300 mm non-alkali glass substrate. The TFTs were developed using a stable diode pumped solid state (DPSS) continuous-wave laser lateral crystallization (CLC) method at a temperature below 450°C. The high performance of the TFTs was attributed to the very large predominantly (100)-oriented grain. This crystallization method will enable high-performance Si-LSI Circuits to be fabricated on large non-alkali glass substrates.
Fumiyo Takeuchi - One of the best experts on this subject based on the ideXlab platform.
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high performance low temperature polycrystalline silicon thin film transistors on non alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2004Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Tatsuya Kakehi, Yoshiki Ebiko, Nobuo SasakiAbstract:High performance low temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) with large grains were created using diode pumped solid state (DPSS) continuous wave (CW) laser lateral crystallization (CLC), employing fabrication processes at 450°C. Field-effect mobilities of 566 cm2/Vs for the n-channel and 200 cm2/Vs for the p-channel were obtained for a thick Si film (100–150 nm) on a 300×300 mm non-alkaline glass substrate. The high performance of the TFTs is attributed to the predominantly (100)-oriented very large grains. With a decreasing Si-film thickness, the grain size decreases, and the surface orientation of the grain changes from (100) to other orientations. These effects lead to reduced field-effect mobility with decreasing Si-film thickness, but it is easy to obtain a high field-effect mobility of over 300 cm2/Vs, even with a 50 nm thick Si film, without special processing techniques. A complementary metal oxide semiconductor (CMOS) ring oscillator was fabricated using a thin Si film 65 nm thick to demonstrate the high circuit performance of CLC poly-Si TFTs by applying the simplest CMOS process technology. A delay of 400 ps/stage at a gate length of 1.5 µm and a supply voltage of Vdd=5.0 (V) was produced on a large non-alkaline glass substrate utilizing a fabrication temperature of 450°C. This crystallization method will lead to the fabrication of high-performance and cheap Si-LSI Circuits on large non-alkaline glass substrates.
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high performance polycrystalline silicon thin film transistors on non alkali glass produced using continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2002Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Nobuo SasakiAbstract:We have developed high-performance polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a field-effect mobility of 566 cm2/Vs for n-channel TFT and 200 cm2/Vs for p-channel TFT on 300 mm×300 mm non-alkali glass substrate. The TFTs were developed using a stable diode pumped solid state (DPSS) continuous-wave laser lateral crystallization (CLC) method at a temperature below 450°C. The high performance of the TFTs was attributed to the very large predominantly (100)-oriented grain. This crystallization method will enable high-performance Si-LSI Circuits to be fabricated on large non-alkali glass substrates.
Michiko Takei - One of the best experts on this subject based on the ideXlab platform.
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high performance low temperature polycrystalline silicon thin film transistors on non alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2004Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Tatsuya Kakehi, Yoshiki Ebiko, Nobuo SasakiAbstract:High performance low temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) with large grains were created using diode pumped solid state (DPSS) continuous wave (CW) laser lateral crystallization (CLC), employing fabrication processes at 450°C. Field-effect mobilities of 566 cm2/Vs for the n-channel and 200 cm2/Vs for the p-channel were obtained for a thick Si film (100–150 nm) on a 300×300 mm non-alkaline glass substrate. The high performance of the TFTs is attributed to the predominantly (100)-oriented very large grains. With a decreasing Si-film thickness, the grain size decreases, and the surface orientation of the grain changes from (100) to other orientations. These effects lead to reduced field-effect mobility with decreasing Si-film thickness, but it is easy to obtain a high field-effect mobility of over 300 cm2/Vs, even with a 50 nm thick Si film, without special processing techniques. A complementary metal oxide semiconductor (CMOS) ring oscillator was fabricated using a thin Si film 65 nm thick to demonstrate the high circuit performance of CLC poly-Si TFTs by applying the simplest CMOS process technology. A delay of 400 ps/stage at a gate length of 1.5 µm and a supply voltage of Vdd=5.0 (V) was produced on a large non-alkaline glass substrate utilizing a fabrication temperature of 450°C. This crystallization method will lead to the fabrication of high-performance and cheap Si-LSI Circuits on large non-alkaline glass substrates.
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high performance polycrystalline silicon thin film transistors on non alkali glass produced using continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2002Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Nobuo SasakiAbstract:We have developed high-performance polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a field-effect mobility of 566 cm2/Vs for n-channel TFT and 200 cm2/Vs for p-channel TFT on 300 mm×300 mm non-alkali glass substrate. The TFTs were developed using a stable diode pumped solid state (DPSS) continuous-wave laser lateral crystallization (CLC) method at a temperature below 450°C. The high performance of the TFTs was attributed to the very large predominantly (100)-oriented grain. This crystallization method will enable high-performance Si-LSI Circuits to be fabricated on large non-alkali glass substrates.
Katsuyuki Suga - One of the best experts on this subject based on the ideXlab platform.
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high performance low temperature polycrystalline silicon thin film transistors on non alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2004Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Tatsuya Kakehi, Yoshiki Ebiko, Nobuo SasakiAbstract:High performance low temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) with large grains were created using diode pumped solid state (DPSS) continuous wave (CW) laser lateral crystallization (CLC), employing fabrication processes at 450°C. Field-effect mobilities of 566 cm2/Vs for the n-channel and 200 cm2/Vs for the p-channel were obtained for a thick Si film (100–150 nm) on a 300×300 mm non-alkaline glass substrate. The high performance of the TFTs is attributed to the predominantly (100)-oriented very large grains. With a decreasing Si-film thickness, the grain size decreases, and the surface orientation of the grain changes from (100) to other orientations. These effects lead to reduced field-effect mobility with decreasing Si-film thickness, but it is easy to obtain a high field-effect mobility of over 300 cm2/Vs, even with a 50 nm thick Si film, without special processing techniques. A complementary metal oxide semiconductor (CMOS) ring oscillator was fabricated using a thin Si film 65 nm thick to demonstrate the high circuit performance of CLC poly-Si TFTs by applying the simplest CMOS process technology. A delay of 400 ps/stage at a gate length of 1.5 µm and a supply voltage of Vdd=5.0 (V) was produced on a large non-alkaline glass substrate utilizing a fabrication temperature of 450°C. This crystallization method will lead to the fabrication of high-performance and cheap Si-LSI Circuits on large non-alkaline glass substrates.
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high performance polycrystalline silicon thin film transistors on non alkali glass produced using continuous wave laser lateral crystallization
Japanese Journal of Applied Physics, 2002Co-Authors: Akito Hara, Fumiyo Takeuchi, Michiko Takei, Katsuyuki Suga, Kenichi Yoshino, Mitsuru Chida, Yasuyuki Sano, Nobuo SasakiAbstract:We have developed high-performance polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a field-effect mobility of 566 cm2/Vs for n-channel TFT and 200 cm2/Vs for p-channel TFT on 300 mm×300 mm non-alkali glass substrate. The TFTs were developed using a stable diode pumped solid state (DPSS) continuous-wave laser lateral crystallization (CLC) method at a temperature below 450°C. The high performance of the TFTs was attributed to the very large predominantly (100)-oriented grain. This crystallization method will enable high-performance Si-LSI Circuits to be fabricated on large non-alkali glass substrates.
