Mach-Zehnder Interferometers

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Jianping Chen - One of the best experts on this subject based on the ideXlab platform.

  • 16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers
    Journal of Lightwave Technology, 2018
    Co-Authors: Liangjun Lu, Linjie Zhou, Lin Shen, Jianping Chen
    Abstract:

    In this paper, we report a nanosecond 16 × 16 silicon electro-optic switch chip based on a Benes architecture. The switch adopts dual-ring-assisted Mach-Zehnder Interferometers as the basic building blocks. In each switch element, both TiN microheaters and PIN diodes are integrated for ring resonance alignment and high-speed switching, respectively. A transfer-matrix-based theoretical model is established to analyze the switch performances. The 16 × 16 switch is characterized by measuring the optical transmission spectra and quadrature phase-shift keying (QPSK) data transmission through 16 representative optical paths. The insertion loss of the entire switch chip is 10.6 ± 1.7 dB and the crosstalk is less than -20.5 dB. The 32-Gb/s QPSK signal is successfully switched to different destination ports by reconfiguring the optical paths, verifying the signal integrity after switching.

  • 16 16 non blocking silicon optical switch based on electro optic mach zehnder Interferometers
    Optics Express, 2016
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Minjuan Wang, Jianping Chen
    Abstract:

    We experimentally demonstrate a 16 × 16 non-blocking optical switch fabric with a footprint of 10.7 × 4.4 mm2. The switch fabric is composed of 56 2 × 2 silicon Mach-Zehnder Interferometers (MZIs), with each integrated with a pair of TiN resistive micro-heaters and a p-i-n diode. The average on-chip insertion loss at 1560 nm wavelength is ~6.7 dB and ~14 dB for the “all-cross” and “all-bar” states, respectively, with a loss variation of ± 1 dB over all routing paths. The measured rise/fall time of the switch upon electrical tuning is 3.2/2.5 ns. The switching functionality is verified by transmission of 20 Gb/s on-off keying (OOK) and 50 Gb/s quadrature phase-shift keying (QPSK) optical signals.

  • 4×4 Silicon non-blocking electro-optic switches based on double-ring assisted Mach-Zehnder Interferometers
    2015 European Conference on Optical Communication (ECOC), 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We demonstrate a 4 × 4 silicon switch using double-ring assisted Mach-Zehnder Interferometers. The maximum electro-optic switching power consumption is 1.38 mW, with phase correction power consumption 22.37 mW. The on-chip insertion loss is

  • Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers
    IEEE Photonics Journal, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Xinwan Li, Jianping Chen
    Abstract:

    We report a broadband 4 × 4 nonblocking optical switch with Mach-Zehnder Interferometers (MZIs) as switch elements on a silicon platform. Silicon resistive heaters are used for phase error correction of MZI arms with total thermooptic power consumption of 33.7 mW. Fast switching is enabled by p-i-n diodes, with average electrooptic tuning power of 14.3 mW for the 24 essential switching states as required for nonblocking routing. The average on-chip insertion loss is 5.8-7.7 dB and crosstalk better than -12 dB at wavelength of 1550 nm. Optical transmission experiments using a high-throughput 50 Gb/s quadrature phase-shift keying (QPSK) optical signal reveal that no significant deterioration is observed on constellation diagrams.

  • $4\times 4$ Silicon Optical Switches Based on Double-Ring-Assisted Mach–Zehnder Interferometers
    IEEE Photonics Technology Letters, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We present the experimental demonstration of a 4 × 4 silicon electro-optic (EO) switch fabric based on a Benes architecture. Double-ring-assisted Mach-Zehnder Interferometers (DR-MZIs) are utilized as the basic switch elements. Silicon resistive microheaters and p-i-n diodes are embedded in both of the microrings of the DR-MZIs for low-loss thermo-optic (TO) phase correction and high-speed switching operation, respectively. The TO tuning power dissipated to align all resonances is 22.37 mW. The maximum EO tuning power required to switch all DR-MZIs is only 1.38 mW. The average on-chip insertion loss is in the range of 4-5.8 dB for all switching states. The transmission spectrum measurement shows that the device can perform switching in a ~ 35 -GHz spectral window with the worst crosstalk being -18.4 dB.

Liangjun Lu - One of the best experts on this subject based on the ideXlab platform.

  • 16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers
    Journal of Lightwave Technology, 2018
    Co-Authors: Liangjun Lu, Linjie Zhou, Lin Shen, Jianping Chen
    Abstract:

    In this paper, we report a nanosecond 16 × 16 silicon electro-optic switch chip based on a Benes architecture. The switch adopts dual-ring-assisted Mach-Zehnder Interferometers as the basic building blocks. In each switch element, both TiN microheaters and PIN diodes are integrated for ring resonance alignment and high-speed switching, respectively. A transfer-matrix-based theoretical model is established to analyze the switch performances. The 16 × 16 switch is characterized by measuring the optical transmission spectra and quadrature phase-shift keying (QPSK) data transmission through 16 representative optical paths. The insertion loss of the entire switch chip is 10.6 ± 1.7 dB and the crosstalk is less than -20.5 dB. The 32-Gb/s QPSK signal is successfully switched to different destination ports by reconfiguring the optical paths, verifying the signal integrity after switching.

  • 16 16 non blocking silicon optical switch based on electro optic mach zehnder Interferometers
    Optics Express, 2016
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Minjuan Wang, Jianping Chen
    Abstract:

    We experimentally demonstrate a 16 × 16 non-blocking optical switch fabric with a footprint of 10.7 × 4.4 mm2. The switch fabric is composed of 56 2 × 2 silicon Mach-Zehnder Interferometers (MZIs), with each integrated with a pair of TiN resistive micro-heaters and a p-i-n diode. The average on-chip insertion loss at 1560 nm wavelength is ~6.7 dB and ~14 dB for the “all-cross” and “all-bar” states, respectively, with a loss variation of ± 1 dB over all routing paths. The measured rise/fall time of the switch upon electrical tuning is 3.2/2.5 ns. The switching functionality is verified by transmission of 20 Gb/s on-off keying (OOK) and 50 Gb/s quadrature phase-shift keying (QPSK) optical signals.

  • 4×4 Silicon non-blocking electro-optic switches based on double-ring assisted Mach-Zehnder Interferometers
    2015 European Conference on Optical Communication (ECOC), 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We demonstrate a 4 × 4 silicon switch using double-ring assisted Mach-Zehnder Interferometers. The maximum electro-optic switching power consumption is 1.38 mW, with phase correction power consumption 22.37 mW. The on-chip insertion loss is

  • Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers
    IEEE Photonics Journal, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Xinwan Li, Jianping Chen
    Abstract:

    We report a broadband 4 × 4 nonblocking optical switch with Mach-Zehnder Interferometers (MZIs) as switch elements on a silicon platform. Silicon resistive heaters are used for phase error correction of MZI arms with total thermooptic power consumption of 33.7 mW. Fast switching is enabled by p-i-n diodes, with average electrooptic tuning power of 14.3 mW for the 24 essential switching states as required for nonblocking routing. The average on-chip insertion loss is 5.8-7.7 dB and crosstalk better than -12 dB at wavelength of 1550 nm. Optical transmission experiments using a high-throughput 50 Gb/s quadrature phase-shift keying (QPSK) optical signal reveal that no significant deterioration is observed on constellation diagrams.

  • $4\times 4$ Silicon Optical Switches Based on Double-Ring-Assisted Mach–Zehnder Interferometers
    IEEE Photonics Technology Letters, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We present the experimental demonstration of a 4 × 4 silicon electro-optic (EO) switch fabric based on a Benes architecture. Double-ring-assisted Mach-Zehnder Interferometers (DR-MZIs) are utilized as the basic switch elements. Silicon resistive microheaters and p-i-n diodes are embedded in both of the microrings of the DR-MZIs for low-loss thermo-optic (TO) phase correction and high-speed switching operation, respectively. The TO tuning power dissipated to align all resonances is 22.37 mW. The maximum EO tuning power required to switch all DR-MZIs is only 1.38 mW. The average on-chip insertion loss is in the range of 4-5.8 dB for all switching states. The transmission spectrum measurement shows that the device can perform switching in a ~ 35 -GHz spectral window with the worst crosstalk being -18.4 dB.

Linjie Zhou - One of the best experts on this subject based on the ideXlab platform.

  • 16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers
    Journal of Lightwave Technology, 2018
    Co-Authors: Liangjun Lu, Linjie Zhou, Lin Shen, Jianping Chen
    Abstract:

    In this paper, we report a nanosecond 16 × 16 silicon electro-optic switch chip based on a Benes architecture. The switch adopts dual-ring-assisted Mach-Zehnder Interferometers as the basic building blocks. In each switch element, both TiN microheaters and PIN diodes are integrated for ring resonance alignment and high-speed switching, respectively. A transfer-matrix-based theoretical model is established to analyze the switch performances. The 16 × 16 switch is characterized by measuring the optical transmission spectra and quadrature phase-shift keying (QPSK) data transmission through 16 representative optical paths. The insertion loss of the entire switch chip is 10.6 ± 1.7 dB and the crosstalk is less than -20.5 dB. The 32-Gb/s QPSK signal is successfully switched to different destination ports by reconfiguring the optical paths, verifying the signal integrity after switching.

  • 16 16 non blocking silicon optical switch based on electro optic mach zehnder Interferometers
    Optics Express, 2016
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Minjuan Wang, Jianping Chen
    Abstract:

    We experimentally demonstrate a 16 × 16 non-blocking optical switch fabric with a footprint of 10.7 × 4.4 mm2. The switch fabric is composed of 56 2 × 2 silicon Mach-Zehnder Interferometers (MZIs), with each integrated with a pair of TiN resistive micro-heaters and a p-i-n diode. The average on-chip insertion loss at 1560 nm wavelength is ~6.7 dB and ~14 dB for the “all-cross” and “all-bar” states, respectively, with a loss variation of ± 1 dB over all routing paths. The measured rise/fall time of the switch upon electrical tuning is 3.2/2.5 ns. The switching functionality is verified by transmission of 20 Gb/s on-off keying (OOK) and 50 Gb/s quadrature phase-shift keying (QPSK) optical signals.

  • 4×4 Silicon non-blocking electro-optic switches based on double-ring assisted Mach-Zehnder Interferometers
    2015 European Conference on Optical Communication (ECOC), 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We demonstrate a 4 × 4 silicon switch using double-ring assisted Mach-Zehnder Interferometers. The maximum electro-optic switching power consumption is 1.38 mW, with phase correction power consumption 22.37 mW. The on-chip insertion loss is

  • Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers
    IEEE Photonics Journal, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Xinwan Li, Jianping Chen
    Abstract:

    We report a broadband 4 × 4 nonblocking optical switch with Mach-Zehnder Interferometers (MZIs) as switch elements on a silicon platform. Silicon resistive heaters are used for phase error correction of MZI arms with total thermooptic power consumption of 33.7 mW. Fast switching is enabled by p-i-n diodes, with average electrooptic tuning power of 14.3 mW for the 24 essential switching states as required for nonblocking routing. The average on-chip insertion loss is 5.8-7.7 dB and crosstalk better than -12 dB at wavelength of 1550 nm. Optical transmission experiments using a high-throughput 50 Gb/s quadrature phase-shift keying (QPSK) optical signal reveal that no significant deterioration is observed on constellation diagrams.

  • $4\times 4$ Silicon Optical Switches Based on Double-Ring-Assisted Mach–Zehnder Interferometers
    IEEE Photonics Technology Letters, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We present the experimental demonstration of a 4 × 4 silicon electro-optic (EO) switch fabric based on a Benes architecture. Double-ring-assisted Mach-Zehnder Interferometers (DR-MZIs) are utilized as the basic switch elements. Silicon resistive microheaters and p-i-n diodes are embedded in both of the microrings of the DR-MZIs for low-loss thermo-optic (TO) phase correction and high-speed switching operation, respectively. The TO tuning power dissipated to align all resonances is 22.37 mW. The maximum EO tuning power required to switch all DR-MZIs is only 1.38 mW. The average on-chip insertion loss is in the range of 4-5.8 dB for all switching states. The transmission spectrum measurement shows that the device can perform switching in a ~ 35 -GHz spectral window with the worst crosstalk being -18.4 dB.

Zuxiang Li - One of the best experts on this subject based on the ideXlab platform.

  • 16 16 non blocking silicon optical switch based on electro optic mach zehnder Interferometers
    Optics Express, 2016
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Minjuan Wang, Jianping Chen
    Abstract:

    We experimentally demonstrate a 16 × 16 non-blocking optical switch fabric with a footprint of 10.7 × 4.4 mm2. The switch fabric is composed of 56 2 × 2 silicon Mach-Zehnder Interferometers (MZIs), with each integrated with a pair of TiN resistive micro-heaters and a p-i-n diode. The average on-chip insertion loss at 1560 nm wavelength is ~6.7 dB and ~14 dB for the “all-cross” and “all-bar” states, respectively, with a loss variation of ± 1 dB over all routing paths. The measured rise/fall time of the switch upon electrical tuning is 3.2/2.5 ns. The switching functionality is verified by transmission of 20 Gb/s on-off keying (OOK) and 50 Gb/s quadrature phase-shift keying (QPSK) optical signals.

  • Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers
    IEEE Photonics Journal, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Xinwan Li, Jianping Chen
    Abstract:

    We report a broadband 4 × 4 nonblocking optical switch with Mach-Zehnder Interferometers (MZIs) as switch elements on a silicon platform. Silicon resistive heaters are used for phase error correction of MZI arms with total thermooptic power consumption of 33.7 mW. Fast switching is enabled by p-i-n diodes, with average electrooptic tuning power of 14.3 mW for the 24 essential switching states as required for nonblocking routing. The average on-chip insertion loss is 5.8-7.7 dB and crosstalk better than -12 dB at wavelength of 1550 nm. Optical transmission experiments using a high-throughput 50 Gb/s quadrature phase-shift keying (QPSK) optical signal reveal that no significant deterioration is observed on constellation diagrams.

  • 4×4 Silicon non-blocking electro-optic switches based on double-ring assisted Mach-Zehnder Interferometers
    2015 European Conference on Optical Communication (ECOC), 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We demonstrate a 4 × 4 silicon switch using double-ring assisted Mach-Zehnder Interferometers. The maximum electro-optic switching power consumption is 1.38 mW, with phase correction power consumption 22.37 mW. The on-chip insertion loss is

  • $4\times 4$ Silicon Optical Switches Based on Double-Ring-Assisted Mach–Zehnder Interferometers
    IEEE Photonics Technology Letters, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We present the experimental demonstration of a 4 × 4 silicon electro-optic (EO) switch fabric based on a Benes architecture. Double-ring-assisted Mach-Zehnder Interferometers (DR-MZIs) are utilized as the basic switch elements. Silicon resistive microheaters and p-i-n diodes are embedded in both of the microrings of the DR-MZIs for low-loss thermo-optic (TO) phase correction and high-speed switching operation, respectively. The TO tuning power dissipated to align all resonances is 22.37 mW. The maximum EO tuning power required to switch all DR-MZIs is only 1.38 mW. The average on-chip insertion loss is in the range of 4-5.8 dB for all switching states. The transmission spectrum measurement shows that the device can perform switching in a ~ 35 -GHz spectral window with the worst crosstalk being -18.4 dB.

  • Broadband 4×4 non-blocking optical switch fabric based on Mach-Zehnder Interferometers
    2014 13th International Conference on Optical Communications and Networks (ICOCN), 2014
    Co-Authors: Linjie Zhou, Liangjun Lu, Zuxiang Li, Jianping Chen
    Abstract:

    We demonstrate a silicon 4×4 non-blocking Benes switch fabric consisting of three stages of tunable Mach-Zehnder Interferometers. Measurements show that the insertion loss is around 10 dB and the crosstalk is below -10 dB over a 40 nm wide wavelength range.

Xinwan Li - One of the best experts on this subject based on the ideXlab platform.

  • 16 16 non blocking silicon optical switch based on electro optic mach zehnder Interferometers
    Optics Express, 2016
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Minjuan Wang, Jianping Chen
    Abstract:

    We experimentally demonstrate a 16 × 16 non-blocking optical switch fabric with a footprint of 10.7 × 4.4 mm2. The switch fabric is composed of 56 2 × 2 silicon Mach-Zehnder Interferometers (MZIs), with each integrated with a pair of TiN resistive micro-heaters and a p-i-n diode. The average on-chip insertion loss at 1560 nm wavelength is ~6.7 dB and ~14 dB for the “all-cross” and “all-bar” states, respectively, with a loss variation of ± 1 dB over all routing paths. The measured rise/fall time of the switch upon electrical tuning is 3.2/2.5 ns. The switching functionality is verified by transmission of 20 Gb/s on-off keying (OOK) and 50 Gb/s quadrature phase-shift keying (QPSK) optical signals.

  • 4×4 Silicon non-blocking electro-optic switches based on double-ring assisted Mach-Zehnder Interferometers
    2015 European Conference on Optical Communication (ECOC), 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We demonstrate a 4 × 4 silicon switch using double-ring assisted Mach-Zehnder Interferometers. The maximum electro-optic switching power consumption is 1.38 mW, with phase correction power consumption 22.37 mW. The on-chip insertion loss is

  • Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers
    IEEE Photonics Journal, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Xinwan Li, Jianping Chen
    Abstract:

    We report a broadband 4 × 4 nonblocking optical switch with Mach-Zehnder Interferometers (MZIs) as switch elements on a silicon platform. Silicon resistive heaters are used for phase error correction of MZI arms with total thermooptic power consumption of 33.7 mW. Fast switching is enabled by p-i-n diodes, with average electrooptic tuning power of 14.3 mW for the 24 essential switching states as required for nonblocking routing. The average on-chip insertion loss is 5.8-7.7 dB and crosstalk better than -12 dB at wavelength of 1550 nm. Optical transmission experiments using a high-throughput 50 Gb/s quadrature phase-shift keying (QPSK) optical signal reveal that no significant deterioration is observed on constellation diagrams.

  • $4\times 4$ Silicon Optical Switches Based on Double-Ring-Assisted Mach–Zehnder Interferometers
    IEEE Photonics Technology Letters, 2015
    Co-Authors: Liangjun Lu, Linjie Zhou, Zuxiang Li, Dong Li, Shuoyi Zhao, Xinwan Li, Jianping Chen
    Abstract:

    We present the experimental demonstration of a 4 × 4 silicon electro-optic (EO) switch fabric based on a Benes architecture. Double-ring-assisted Mach-Zehnder Interferometers (DR-MZIs) are utilized as the basic switch elements. Silicon resistive microheaters and p-i-n diodes are embedded in both of the microrings of the DR-MZIs for low-loss thermo-optic (TO) phase correction and high-speed switching operation, respectively. The TO tuning power dissipated to align all resonances is 22.37 mW. The maximum EO tuning power required to switch all DR-MZIs is only 1.38 mW. The average on-chip insertion loss is in the range of 4-5.8 dB for all switching states. The transmission spectrum measurement shows that the device can perform switching in a ~ 35 -GHz spectral window with the worst crosstalk being -18.4 dB.

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