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A. Stesmans - One of the best experts on this subject based on the ideXlab platform.
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asga antisites identified by electron spin resonance as a Main Interface defect system in thermal gaas native oxide structures
Applied Physics Letters, 2013Co-Authors: A. Stesmans, S. Nguyen, V V AfanasevAbstract:Aiming to assess the atomic-structural identity of inherently generated interfacial point defects during thermal oxidation, a conventional low-temperature electron spin resonance study has been carried out on (100)GaAs/native oxide structures thermally grown in the range of 350–615 °C on both powders and slices of semi-insulating (100)GaAs. This compellingly reveals substantial generation (density ∼ 1 × 1013 cm−2) of interfacial 75AsGa+ antisites in registry with the GaAs substrate layer, thus providing solid independent evidence of substantial interfacial As enrichment, appearing as endemic to oxidation of GaAs, and at the same time, providing an answer of how a major part of excess As gets interfacially incorporated. Given the known electrical deep double donor attribute of AsGa, direct identification is thus established of a major system of detrimental Interface traps.
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AsGa+ antisites identified by electron spin resonance as a Main Interface defect system in thermal GaAs/native oxide structures
Applied Physics Letters, 2013Co-Authors: A. Stesmans, S. Nguyen, V. V. Afanas'evAbstract:Aiming to assess the atomic-structural identity of inherently generated interfacial point defects during thermal oxidation, a conventional low-temperature electron spin resonance study has been carried out on (100)GaAs/native oxide structures thermally grown in the range of 350–615 °C on both powders and slices of semi-insulating (100)GaAs. This compellingly reveals substantial generation (density ∼ 1 × 1013 cm−2) of interfacial 75AsGa+ antisites in registry with the GaAs substrate layer, thus providing solid independent evidence of substantial interfacial As enrichment, appearing as endemic to oxidation of GaAs, and at the same time, providing an answer of how a major part of excess As gets interfacially incorporated. Given the known electrical deep double donor attribute of AsGa, direct identification is thus established of a major system of detrimental Interface traps.
V V Afanasev - One of the best experts on this subject based on the ideXlab platform.
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asga antisites identified by electron spin resonance as a Main Interface defect system in thermal gaas native oxide structures
Applied Physics Letters, 2013Co-Authors: A. Stesmans, S. Nguyen, V V AfanasevAbstract:Aiming to assess the atomic-structural identity of inherently generated interfacial point defects during thermal oxidation, a conventional low-temperature electron spin resonance study has been carried out on (100)GaAs/native oxide structures thermally grown in the range of 350–615 °C on both powders and slices of semi-insulating (100)GaAs. This compellingly reveals substantial generation (density ∼ 1 × 1013 cm−2) of interfacial 75AsGa+ antisites in registry with the GaAs substrate layer, thus providing solid independent evidence of substantial interfacial As enrichment, appearing as endemic to oxidation of GaAs, and at the same time, providing an answer of how a major part of excess As gets interfacially incorporated. Given the known electrical deep double donor attribute of AsGa, direct identification is thus established of a major system of detrimental Interface traps.
V. V. Afanas'ev - One of the best experts on this subject based on the ideXlab platform.
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AsGa+ antisites identified by electron spin resonance as a Main Interface defect system in thermal GaAs/native oxide structures
Applied Physics Letters, 2013Co-Authors: A. Stesmans, S. Nguyen, V. V. Afanas'evAbstract:Aiming to assess the atomic-structural identity of inherently generated interfacial point defects during thermal oxidation, a conventional low-temperature electron spin resonance study has been carried out on (100)GaAs/native oxide structures thermally grown in the range of 350–615 °C on both powders and slices of semi-insulating (100)GaAs. This compellingly reveals substantial generation (density ∼ 1 × 1013 cm−2) of interfacial 75AsGa+ antisites in registry with the GaAs substrate layer, thus providing solid independent evidence of substantial interfacial As enrichment, appearing as endemic to oxidation of GaAs, and at the same time, providing an answer of how a major part of excess As gets interfacially incorporated. Given the known electrical deep double donor attribute of AsGa, direct identification is thus established of a major system of detrimental Interface traps.
S. Nguyen - One of the best experts on this subject based on the ideXlab platform.
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asga antisites identified by electron spin resonance as a Main Interface defect system in thermal gaas native oxide structures
Applied Physics Letters, 2013Co-Authors: A. Stesmans, S. Nguyen, V V AfanasevAbstract:Aiming to assess the atomic-structural identity of inherently generated interfacial point defects during thermal oxidation, a conventional low-temperature electron spin resonance study has been carried out on (100)GaAs/native oxide structures thermally grown in the range of 350–615 °C on both powders and slices of semi-insulating (100)GaAs. This compellingly reveals substantial generation (density ∼ 1 × 1013 cm−2) of interfacial 75AsGa+ antisites in registry with the GaAs substrate layer, thus providing solid independent evidence of substantial interfacial As enrichment, appearing as endemic to oxidation of GaAs, and at the same time, providing an answer of how a major part of excess As gets interfacially incorporated. Given the known electrical deep double donor attribute of AsGa, direct identification is thus established of a major system of detrimental Interface traps.
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AsGa+ antisites identified by electron spin resonance as a Main Interface defect system in thermal GaAs/native oxide structures
Applied Physics Letters, 2013Co-Authors: A. Stesmans, S. Nguyen, V. V. Afanas'evAbstract:Aiming to assess the atomic-structural identity of inherently generated interfacial point defects during thermal oxidation, a conventional low-temperature electron spin resonance study has been carried out on (100)GaAs/native oxide structures thermally grown in the range of 350–615 °C on both powders and slices of semi-insulating (100)GaAs. This compellingly reveals substantial generation (density ∼ 1 × 1013 cm−2) of interfacial 75AsGa+ antisites in registry with the GaAs substrate layer, thus providing solid independent evidence of substantial interfacial As enrichment, appearing as endemic to oxidation of GaAs, and at the same time, providing an answer of how a major part of excess As gets interfacially incorporated. Given the known electrical deep double donor attribute of AsGa, direct identification is thus established of a major system of detrimental Interface traps.
Veronique Josserand - One of the best experts on this subject based on the ideXlab platform.
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Stapled peptide targeting the CDK4/Cyclin D Interface combined with Abemaciclib inhibits KRAS mutant lung cancer growth
Theranostics, 2020Co-Authors: Céline Bouclier, Morgan Pellerano, Julien Vollaire, Matthieu Simon, Guillaume Laconde, Sebastien Diot, Sylvie Lantuejoul, Benoit Busser, Laetitia Vanwonterghem, Veronique JosserandAbstract:CDK4/cyclin D kinase constitutes an attractive pharmacological target for development of anticancer therapeutics, in particular in KRAS-mutant lung cancer patients, who have a poor prognosis and no targeted therapy available yet. Although several ATP-competitive inhibitors of CDK4 have been developed for anticancer therapeutics, they suffer from limited specificity and efficacy. Methods: As an alternative to ATP-competitive inhibitors we have designed a stapled peptide to target the Main Interface between CDK4 and cyclin D, and have characterized its physico-chemical properties and affinity to bind cyclin D1. Results: We have validated a positive correlation between CDK4/cyclin D level and KRAS mutation in lung cancer patients. The stapled peptide enters cells rapidly and efficiently, and inhibits CDK4 kinase activity and proliferation in lung cancer cells. Its intrapulmonary administration in mice enables its retention in orthotopic lung tumours and complete inhibition of their growth when co-administered with Abemaciclib. Conclusion: The stapled peptide targeting the Main Interface between CDK4 and cyclin D provides promising therapeutic perspectives for patients with lung cancer.
