The Experts below are selected from a list of 20265 Experts worldwide ranked by ideXlab platform

Michel Bruel - One of the best experts on this subject based on the ideXlab platform.

  • smart cut a new silicon on insulator Material Technology based on hydrogen implantation and wafer bonding 1
    Japanese Journal of Applied Physics, 1997
    Co-Authors: Michel Bruel, Bernard Aspar, A J Aubertonherve
    Abstract:

    An alternative route to existing silicon on insulator (SOI) Material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch-back SOI) is the new Smart-Cut process, which appears to be a good candidate to achieve ULSI criteria. The Smart-Cut process involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. The details of the Smart-Cut process, the physical phenomena involved in the different technological steps such as hydrogen implantation related mechanisms and wafer bonding are discussed. The characteristics of the final structure in terms of thickness homogeneity, crystalline defects, surface microroughness, and electrical characterization are presented. Other applications of this process are also highlighted.

  • Smart-cut: A new silicon on insulator Material Technology based on hydrogen implantation and wafer bonding
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1997
    Co-Authors: Michel Bruel, Andre-jacques Auberton-hervé, Bernard Aspar, A J Aubertonherve
    Abstract:

    An alternative route to existing silicon on insulator (SOI) Material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch-back SOI) is the new Smart-Cut process, which appears to be a good candidate to achieve ULSI criteria. The Smart-Cut process involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. The details of the Smart-Cut process, the physical phenomena involved in the different technological steps such as hydrogen implantation related mechanisms and wafer bonding are discussed. The characteristics of the final structure in terms of thickness homogeneity, crystalline defects, surface microroughness, and electrical characterization are presented. Other applications of this process are also highlighted.

  • Application of hydrogen ion beams to Silicon On Insulator Material Technology
    Nuclear Instruments & Methods in Physics Research B, 1996
    Co-Authors: Michel Bruel
    Abstract:

    A new application for proton ion beams in the field of Silicon On Insulator Material (SOI) Technology is reported. In this Technology, based on hydrophillic wafer bonding and referred to as ''Smart-Cut'', heat treatment induces an in-depth micro-slicing of one of two bonded wafers previously implanted with hydrogen. The principle of this process involves the basic mechanisms associated with high fluence proton implantation in Materials, such as blistering, flaking and exfoliation. The intrinsic properties of this process lead to very high crystalline quality of the SOI layers and very good thickness uniformity. After presentation of the process details and the underlying physical aspects, the main characteristics of the Smart-Cut Technology and first physical and electrical characterizations are reported.

  • “Smart cut”: a promising new SOI Material Technology
    1995 IEEE International SOI Conference Proceedings, 1995
    Co-Authors: Michel Bruel, A Soubie, J.M. Lamure, T. Barge, Andre-jacques Auberton-hervé, Bernard Aspar, F. Metral, Christophe Maleville, Thierry Poumeyrol, Barbara Charlet, S. Trucchi
    Abstract:

    Silicon On Insulator technologies appear to be a key issue for low-power, low-voltage technologies (≈1.5 V) and will play a major role in ULSI developments. Today two SOI Material technologies are in competition in the very thin SOI film market: SIMOX (Separation by IMplanted OXygen) and BESOI (Bond and Etch Back SOI) Technology. We have developed a new SOI Material Technology using a bonding technique combined with an ion implantation step, which aims to overcome the remaining limitations of both the above techniques. This process was developed as the “IMPROVE” (IMplanted PROtons Voids Engineering) process and is henceforth referred to as “Smart-cut”. The process is implemented for fabrication of Unibond wafers

  • "Smart Cut": a promising new SOI Material Technology
    1995 IEEE International SOI Conference Proceedings, 1995
    Co-Authors: Michel Bruel, A Soubie, J.M. Lamure, T. Barge, Andre-jacques Auberton-hervé, Bernard Aspar, A J Aubertonherve, Christophe Maleville, Thierry Poumeyrol, Barbara Charlet, F. Metral
    Abstract:

    Silicon On Insulator technologies appear to be a key issue for low-power, low-voltage technologies (≈1.5 V) and will play a major role in ULSI developments. Today two SOI Material technologies are in competition in the very thin SOI film market: SIMOX (Separation by IMplanted OXygen) and BESOI (Bond and Etch Back SOI) Technology. We have developed a new SOI Material Technology using a bonding technique combined with an ion implantation step, which aims to overcome the remaining limitations of both the above techniques. This process was developed as the “IMPROVE” (IMplanted PROtons Voids Engineering) process and is henceforth referred to as “Smart-cut”. The process is implemented for fabrication of Unibond wafers

B. Lu - One of the best experts on this subject based on the ideXlab platform.

  • Additive manufacturing: Integrated fabrication of macro/microstructures
    Jixie Gongcheng Xuebao/Journal of Mechanical Engineering, 2013
    Co-Authors: Di Li, Yuquan Liu, Xu Tian, Qin Lian, Z. Jin, A. Zhang, Dichen Li, Jian He, B. Lu
    Abstract:

    Additive manufacturing(AM) is emerging as an advanced manufacturing Technology based on the principles of laminated fabrication. It integrates multidisciplinary fields including information Technology, novel Material Technology and manufacturing Technology. It is currently recognized as one of the most competitive technologies in the world. Here the concept of integrated fabrication for macro/microstructures is presented based on the layer-by-layer accumulation process of AM, which exhibits unparalleled advantages over other manufacturing technologies for the fabrication of metallic, ceramic and composite Material parts. It could extremely shorten the manufacturing cycle and holds the potential to stimulate the transform of manufacturing modes from mass production to personalized manufacturing. Typical applications of AM in the integrated fabrication of macro/microstructures are illustrated and discussed in light of recent progress in metallic parts with oriented crystal microstructures, photonic crystals and tissue-engineered scaffolds. In comparison with conventional manufacturing technologies, AM provides a unique solution to realize the integrated fabrication of macro/microstructures and demonstrates the future prospects of manufacturing technologies, which could provide powerful supports for the development and innovation of related disciplines and industrial fields. © 2013 Journal of Mechanical Engineering.

Takayuki Sugama - One of the best experts on this subject based on the ideXlab platform.

  • Geopolymer Sealing Materials
    US DOE Geothermal Technologies Program, 2010
    Co-Authors: Tomas Butcher, Takayuki Sugama
    Abstract:

    Develop and characterize field-applicable geopolymer temporary sealing Materials in the laboratory and to transfer this developed Material Technology to geothermal drilling service companies as collaborators for field validation tests. Impact:

A J Aubertonherve - One of the best experts on this subject based on the ideXlab platform.

  • smart cut a new silicon on insulator Material Technology based on hydrogen implantation and wafer bonding 1
    Japanese Journal of Applied Physics, 1997
    Co-Authors: Michel Bruel, Bernard Aspar, A J Aubertonherve
    Abstract:

    An alternative route to existing silicon on insulator (SOI) Material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch-back SOI) is the new Smart-Cut process, which appears to be a good candidate to achieve ULSI criteria. The Smart-Cut process involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. The details of the Smart-Cut process, the physical phenomena involved in the different technological steps such as hydrogen implantation related mechanisms and wafer bonding are discussed. The characteristics of the final structure in terms of thickness homogeneity, crystalline defects, surface microroughness, and electrical characterization are presented. Other applications of this process are also highlighted.

  • Smart-cut: A new silicon on insulator Material Technology based on hydrogen implantation and wafer bonding
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1997
    Co-Authors: Michel Bruel, Andre-jacques Auberton-hervé, Bernard Aspar, A J Aubertonherve
    Abstract:

    An alternative route to existing silicon on insulator (SOI) Material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch-back SOI) is the new Smart-Cut process, which appears to be a good candidate to achieve ULSI criteria. The Smart-Cut process involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. The details of the Smart-Cut process, the physical phenomena involved in the different technological steps such as hydrogen implantation related mechanisms and wafer bonding are discussed. The characteristics of the final structure in terms of thickness homogeneity, crystalline defects, surface microroughness, and electrical characterization are presented. Other applications of this process are also highlighted.

  • "Smart Cut": a promising new SOI Material Technology
    1995 IEEE International SOI Conference Proceedings, 1995
    Co-Authors: Michel Bruel, A Soubie, J.M. Lamure, T. Barge, Andre-jacques Auberton-hervé, Bernard Aspar, A J Aubertonherve, Christophe Maleville, Thierry Poumeyrol, Barbara Charlet, F. Metral
    Abstract:

    Silicon On Insulator technologies appear to be a key issue for low-power, low-voltage technologies (≈1.5 V) and will play a major role in ULSI developments. Today two SOI Material technologies are in competition in the very thin SOI film market: SIMOX (Separation by IMplanted OXygen) and BESOI (Bond and Etch Back SOI) Technology. We have developed a new SOI Material Technology using a bonding technique combined with an ion implantation step, which aims to overcome the remaining limitations of both the above techniques. This process was developed as the “IMPROVE” (IMplanted PROtons Voids Engineering) process and is henceforth referred to as “Smart-cut”. The process is implemented for fabrication of Unibond wafers

Bernard Aspar - One of the best experts on this subject based on the ideXlab platform.

  • smart cut a new silicon on insulator Material Technology based on hydrogen implantation and wafer bonding 1
    Japanese Journal of Applied Physics, 1997
    Co-Authors: Michel Bruel, Bernard Aspar, A J Aubertonherve
    Abstract:

    An alternative route to existing silicon on insulator (SOI) Material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch-back SOI) is the new Smart-Cut process, which appears to be a good candidate to achieve ULSI criteria. The Smart-Cut process involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. The details of the Smart-Cut process, the physical phenomena involved in the different technological steps such as hydrogen implantation related mechanisms and wafer bonding are discussed. The characteristics of the final structure in terms of thickness homogeneity, crystalline defects, surface microroughness, and electrical characterization are presented. Other applications of this process are also highlighted.

  • Smart-cut: A new silicon on insulator Material Technology based on hydrogen implantation and wafer bonding
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1997
    Co-Authors: Michel Bruel, Andre-jacques Auberton-hervé, Bernard Aspar, A J Aubertonherve
    Abstract:

    An alternative route to existing silicon on insulator (SOI) Material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch-back SOI) is the new Smart-Cut process, which appears to be a good candidate to achieve ULSI criteria. The Smart-Cut process involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. The details of the Smart-Cut process, the physical phenomena involved in the different technological steps such as hydrogen implantation related mechanisms and wafer bonding are discussed. The characteristics of the final structure in terms of thickness homogeneity, crystalline defects, surface microroughness, and electrical characterization are presented. Other applications of this process are also highlighted.

  • “Smart cut”: a promising new SOI Material Technology
    1995 IEEE International SOI Conference Proceedings, 1995
    Co-Authors: Michel Bruel, A Soubie, J.M. Lamure, T. Barge, Andre-jacques Auberton-hervé, Bernard Aspar, F. Metral, Christophe Maleville, Thierry Poumeyrol, Barbara Charlet, S. Trucchi
    Abstract:

    Silicon On Insulator technologies appear to be a key issue for low-power, low-voltage technologies (≈1.5 V) and will play a major role in ULSI developments. Today two SOI Material technologies are in competition in the very thin SOI film market: SIMOX (Separation by IMplanted OXygen) and BESOI (Bond and Etch Back SOI) Technology. We have developed a new SOI Material Technology using a bonding technique combined with an ion implantation step, which aims to overcome the remaining limitations of both the above techniques. This process was developed as the “IMPROVE” (IMplanted PROtons Voids Engineering) process and is henceforth referred to as “Smart-cut”. The process is implemented for fabrication of Unibond wafers

  • "Smart Cut": a promising new SOI Material Technology
    1995 IEEE International SOI Conference Proceedings, 1995
    Co-Authors: Michel Bruel, A Soubie, J.M. Lamure, T. Barge, Andre-jacques Auberton-hervé, Bernard Aspar, A J Aubertonherve, Christophe Maleville, Thierry Poumeyrol, Barbara Charlet, F. Metral
    Abstract:

    Silicon On Insulator technologies appear to be a key issue for low-power, low-voltage technologies (≈1.5 V) and will play a major role in ULSI developments. Today two SOI Material technologies are in competition in the very thin SOI film market: SIMOX (Separation by IMplanted OXygen) and BESOI (Bond and Etch Back SOI) Technology. We have developed a new SOI Material Technology using a bonding technique combined with an ion implantation step, which aims to overcome the remaining limitations of both the above techniques. This process was developed as the “IMPROVE” (IMplanted PROtons Voids Engineering) process and is henceforth referred to as “Smart-cut”. The process is implemented for fabrication of Unibond wafers