The Experts below are selected from a list of 5043 Experts worldwide ranked by ideXlab platform
Yao Yao - One of the best experts on this subject based on the ideXlab platform.
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significant texture improvement in single crystalline like materials on low cost flexible Metal Foils through growth of silver thin films
Journal of Applied Crystallography, 2019Co-Authors: Ying Gao, Yao Yao, Sicong Sun, Eduard Galstyan, Pratap RudraAbstract:Low texture spreads of single-crystalline-like materials are critical for high performance of low-cost flexible semiconductors and second-generation high-temperature superconductors based on Metal Foils. For texture improvement, a single-crystalline-like Ag film is epitaxially grown on an ion-beam-assisted deposition TiN substrate using magnetron sputtering. Ultra-low texture spreads are found in the thin Ag film (∼330 nm), with an out-of-plane texture spread (Δω) of ∼1.03° and an in-plane texture spread (Δϕ) of ∼1.34°. Compared with the texture spreads of the TiN substrate, Δω and Δϕ of the Ag film are reduced by ∼42 and ∼79%, respectively. Applying this Ag buffer, the texture spreads of a single-crystalline-like Ge film are reduced by ∼37% (Δω) and ∼36% (Δϕ). Factors contributing to the texture improvement by Ag are studied using single-crystalline-like Ag films with various thicknesses.
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flexible gaas solar cells on roll to roll processed epitaxial ge films on Metal Foils a route towards low cost and high performance iii v photovoltaics
Energy and Environmental Science, 2019Co-Authors: Pavel Dutta, Monika Rathi, Yao Yao, Devendra Khatiwada, Sicong SunAbstract:In this report, we describe a unique roll-to-roll plasma-enhanced chemical vapor deposition (R2R-PECVD) technique to grow high-quality single-crystalline-like Ge films on flexible Metal Foils, an important advancement towards scalable processing of epitaxial Ge films at low-cost. Ion-beam assisted deposition was used to create single-crystalline-like substrate templates to enable epitaxial growth of Ge films. The Ge films were highly (004) oriented, biaxially-textured and showed remarkable crystalline quality, equivalent to single-crystal Ge wafers. Subsequently, the Ge films on Metal Foils were used as substrates to fabricate flexible GaAs single-junction solar cell by Metal-oxide chemical vapor deposition (MOCVD). The champion device showed efficiency of 11.5%, and the average efficiency of four devices was 8% at 1 sun, the highest reported on GaAs PV directly deposited on alternative flexible substrates. Devices made on CVD-Ge film exhibited significantly improved performance compared to the ones grown on sputtered Ge films. Scalable production of inexpensive and flexible epi-Ge films will not only be useful for developing low-cost and high-performance III–V solar cells, but also for emerging flexible electronic devices applications.
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high mobility single crystalline like silicon thin films on inexpensive flexible Metal Foils by plasma enhanced chemical vapor deposition
Acta Materialia, 2018Co-Authors: Pavel Dutta, Ying Gao, Monika Rathi, Yao Yao, M N Iliev, J Martinez, V SelvamanickamAbstract:Abstract In this report, we demonstrate heteroepitaxial growth of single-crystalline-like Si thin films on inexpensive and lightweight flexible Metal foil substrates using radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Single-crystalline-like Ge thin film on ion-beam textured templates on Metal Foils served as epitaxy enabling substrates for Si growth. The epitaxial Si films were oriented along (004) direction and strongly biaxially-textured with narrow in-plane and out-of-plane spreads. Surface morphology was granular with 300–400 nm diameter grains having very low-angle grain boundaries (average ∼ 0.5°). Raman spectroscopy revealed near 100% crystallinity and high structural quality, comparable to bulk c-Si wafer. Controllable in-situ gas phase doping was carried out to achieve n- and p-type Si films with high electron and hole mobilities of 230 and 65 cm2/V-s respectively and carrier concentrations suitable for electronic device application. Direct deposition of high mobility single-crystalline-like Si thin films on flexible and inexpensive Metal Foils can be a potential route towards roll-to-roll scalable manufacturing of high-performance flexible electronics applications.
Chongyun Park - One of the best experts on this subject based on the ideXlab platform.
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epitaxial growth of a single crystal hybridized boron nitride and graphene layer on a wide band gap semiconductor
arXiv: Mesoscale and Nanoscale Physics, 2015Co-Authors: Hachul Shin, Yamujin Jang, Taehoon Kim, Junhae Lee, Sung Joon Ahn, Jaehyun Lee, Youngkwon Moon, Jihoon Park, Sung Jong Yoo, Chongyun ParkAbstract:Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal Metals or Metal Foils by chemical vapor deposition (CVD). However, once fabricated on Metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on Metal Foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 oC using borazine molecules. Second, when heated above 1150 oC in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 oC, the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.
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epitaxial growth of a single crystal hybridized boron nitride and graphene layer on a wide band gap semiconductor
Journal of the American Chemical Society, 2015Co-Authors: Hachul Shin, Yamujin Jang, Taehoon Kim, Junhae Lee, Sung Joon Ahn, Jaehyun Lee, Youngkwon Moon, Jihoon Park, Sung Jong Yoo, Chongyun ParkAbstract:Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal Metals or Metal Foils by chemical vapor deposition (CVD). However, once fabricated on Metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on Metal Foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 °C using borazine molecules. Second, when heated above 1150 °C in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene doma...
Sicong Sun - One of the best experts on this subject based on the ideXlab platform.
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significant texture improvement in single crystalline like materials on low cost flexible Metal Foils through growth of silver thin films
Journal of Applied Crystallography, 2019Co-Authors: Ying Gao, Yao Yao, Sicong Sun, Eduard Galstyan, Pratap RudraAbstract:Low texture spreads of single-crystalline-like materials are critical for high performance of low-cost flexible semiconductors and second-generation high-temperature superconductors based on Metal Foils. For texture improvement, a single-crystalline-like Ag film is epitaxially grown on an ion-beam-assisted deposition TiN substrate using magnetron sputtering. Ultra-low texture spreads are found in the thin Ag film (∼330 nm), with an out-of-plane texture spread (Δω) of ∼1.03° and an in-plane texture spread (Δϕ) of ∼1.34°. Compared with the texture spreads of the TiN substrate, Δω and Δϕ of the Ag film are reduced by ∼42 and ∼79%, respectively. Applying this Ag buffer, the texture spreads of a single-crystalline-like Ge film are reduced by ∼37% (Δω) and ∼36% (Δϕ). Factors contributing to the texture improvement by Ag are studied using single-crystalline-like Ag films with various thicknesses.
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flexible gaas solar cells on roll to roll processed epitaxial ge films on Metal Foils a route towards low cost and high performance iii v photovoltaics
Energy and Environmental Science, 2019Co-Authors: Pavel Dutta, Monika Rathi, Yao Yao, Devendra Khatiwada, Sicong SunAbstract:In this report, we describe a unique roll-to-roll plasma-enhanced chemical vapor deposition (R2R-PECVD) technique to grow high-quality single-crystalline-like Ge films on flexible Metal Foils, an important advancement towards scalable processing of epitaxial Ge films at low-cost. Ion-beam assisted deposition was used to create single-crystalline-like substrate templates to enable epitaxial growth of Ge films. The Ge films were highly (004) oriented, biaxially-textured and showed remarkable crystalline quality, equivalent to single-crystal Ge wafers. Subsequently, the Ge films on Metal Foils were used as substrates to fabricate flexible GaAs single-junction solar cell by Metal-oxide chemical vapor deposition (MOCVD). The champion device showed efficiency of 11.5%, and the average efficiency of four devices was 8% at 1 sun, the highest reported on GaAs PV directly deposited on alternative flexible substrates. Devices made on CVD-Ge film exhibited significantly improved performance compared to the ones grown on sputtered Ge films. Scalable production of inexpensive and flexible epi-Ge films will not only be useful for developing low-cost and high-performance III–V solar cells, but also for emerging flexible electronic devices applications.
Pavel Dutta - One of the best experts on this subject based on the ideXlab platform.
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flexible gaas solar cells on roll to roll processed epitaxial ge films on Metal Foils a route towards low cost and high performance iii v photovoltaics
Energy and Environmental Science, 2019Co-Authors: Pavel Dutta, Monika Rathi, Yao Yao, Devendra Khatiwada, Sicong SunAbstract:In this report, we describe a unique roll-to-roll plasma-enhanced chemical vapor deposition (R2R-PECVD) technique to grow high-quality single-crystalline-like Ge films on flexible Metal Foils, an important advancement towards scalable processing of epitaxial Ge films at low-cost. Ion-beam assisted deposition was used to create single-crystalline-like substrate templates to enable epitaxial growth of Ge films. The Ge films were highly (004) oriented, biaxially-textured and showed remarkable crystalline quality, equivalent to single-crystal Ge wafers. Subsequently, the Ge films on Metal Foils were used as substrates to fabricate flexible GaAs single-junction solar cell by Metal-oxide chemical vapor deposition (MOCVD). The champion device showed efficiency of 11.5%, and the average efficiency of four devices was 8% at 1 sun, the highest reported on GaAs PV directly deposited on alternative flexible substrates. Devices made on CVD-Ge film exhibited significantly improved performance compared to the ones grown on sputtered Ge films. Scalable production of inexpensive and flexible epi-Ge films will not only be useful for developing low-cost and high-performance III–V solar cells, but also for emerging flexible electronic devices applications.
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high mobility single crystalline like silicon thin films on inexpensive flexible Metal Foils by plasma enhanced chemical vapor deposition
Acta Materialia, 2018Co-Authors: Pavel Dutta, Ying Gao, Monika Rathi, Yao Yao, M N Iliev, J Martinez, V SelvamanickamAbstract:Abstract In this report, we demonstrate heteroepitaxial growth of single-crystalline-like Si thin films on inexpensive and lightweight flexible Metal foil substrates using radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Single-crystalline-like Ge thin film on ion-beam textured templates on Metal Foils served as epitaxy enabling substrates for Si growth. The epitaxial Si films were oriented along (004) direction and strongly biaxially-textured with narrow in-plane and out-of-plane spreads. Surface morphology was granular with 300–400 nm diameter grains having very low-angle grain boundaries (average ∼ 0.5°). Raman spectroscopy revealed near 100% crystallinity and high structural quality, comparable to bulk c-Si wafer. Controllable in-situ gas phase doping was carried out to achieve n- and p-type Si films with high electron and hole mobilities of 230 and 65 cm2/V-s respectively and carrier concentrations suitable for electronic device application. Direct deposition of high mobility single-crystalline-like Si thin films on flexible and inexpensive Metal Foils can be a potential route towards roll-to-roll scalable manufacturing of high-performance flexible electronics applications.
V Selvamanickam - One of the best experts on this subject based on the ideXlab platform.
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high mobility single crystalline like silicon thin films on inexpensive flexible Metal Foils by plasma enhanced chemical vapor deposition
Acta Materialia, 2018Co-Authors: Pavel Dutta, Ying Gao, Monika Rathi, Yao Yao, M N Iliev, J Martinez, V SelvamanickamAbstract:Abstract In this report, we demonstrate heteroepitaxial growth of single-crystalline-like Si thin films on inexpensive and lightweight flexible Metal foil substrates using radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Single-crystalline-like Ge thin film on ion-beam textured templates on Metal Foils served as epitaxy enabling substrates for Si growth. The epitaxial Si films were oriented along (004) direction and strongly biaxially-textured with narrow in-plane and out-of-plane spreads. Surface morphology was granular with 300–400 nm diameter grains having very low-angle grain boundaries (average ∼ 0.5°). Raman spectroscopy revealed near 100% crystallinity and high structural quality, comparable to bulk c-Si wafer. Controllable in-situ gas phase doping was carried out to achieve n- and p-type Si films with high electron and hole mobilities of 230 and 65 cm2/V-s respectively and carrier concentrations suitable for electronic device application. Direct deposition of high mobility single-crystalline-like Si thin films on flexible and inexpensive Metal Foils can be a potential route towards roll-to-roll scalable manufacturing of high-performance flexible electronics applications.