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D. Widmer - One of the best experts on this subject based on the ideXlab platform.

  • electrical current distribution across a metal insulator metal Structure during bistable switching
    Journal of Applied Physics, 2001
    Co-Authors: Claudia Rossel, G I Meijer, David Bremaud, D. Widmer
    Abstract:

    Combining scanning electron microscopy and electron-beam-induced current imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like Structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

  • Electrical current distribution across a Metal-Insulator-Metal Structure during bistable switching
    Journal of Applied Physics, 2001
    Co-Authors: Claudia Rossel, G I Meijer, David Bremaud, D. Widmer
    Abstract:

    Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like Structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

Claudia Rossel - One of the best experts on this subject based on the ideXlab platform.

  • electrical current distribution across a metal insulator metal Structure during bistable switching
    Journal of Applied Physics, 2001
    Co-Authors: Claudia Rossel, G I Meijer, David Bremaud, D. Widmer
    Abstract:

    Combining scanning electron microscopy and electron-beam-induced current imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like Structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

  • Electrical current distribution across a Metal-Insulator-Metal Structure during bistable switching
    Journal of Applied Physics, 2001
    Co-Authors: Claudia Rossel, G I Meijer, David Bremaud, D. Widmer
    Abstract:

    Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like Structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

David Bremaud - One of the best experts on this subject based on the ideXlab platform.

  • electrical current distribution across a metal insulator metal Structure during bistable switching
    Journal of Applied Physics, 2001
    Co-Authors: Claudia Rossel, G I Meijer, David Bremaud, D. Widmer
    Abstract:

    Combining scanning electron microscopy and electron-beam-induced current imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like Structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

  • Electrical current distribution across a Metal-Insulator-Metal Structure during bistable switching
    Journal of Applied Physics, 2001
    Co-Authors: Claudia Rossel, G I Meijer, David Bremaud, D. Widmer
    Abstract:

    Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like Structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

G I Meijer - One of the best experts on this subject based on the ideXlab platform.

  • electrical current distribution across a metal insulator metal Structure during bistable switching
    Journal of Applied Physics, 2001
    Co-Authors: Claudia Rossel, G I Meijer, David Bremaud, D. Widmer
    Abstract:

    Combining scanning electron microscopy and electron-beam-induced current imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like Structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

  • Electrical current distribution across a Metal-Insulator-Metal Structure during bistable switching
    Journal of Applied Physics, 2001
    Co-Authors: Claudia Rossel, G I Meijer, David Bremaud, D. Widmer
    Abstract:

    Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like Structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

Tuohung Hou - One of the best experts on this subject based on the ideXlab platform.

  • bipolar nonlinear hbox ni tio _ 2 hbox hbox ni selector for 1s1r crossbar array applications
    IEEE Electron Device Letters, 2011
    Co-Authors: Jiunjia Huang, Yiming Tseng, Chungwei Hsu, Tuohung Hou
    Abstract:

    A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni Metal-Insulator-Metal Structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO2 barriers. The series connection with an HfO2-resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell Structure for high-density crossbar array applications.