The Experts below are selected from a list of 294 Experts worldwide ranked by ideXlab platform
Akira Fujiwara - One of the best experts on this subject based on the ideXlab platform.
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silicon nanowire Metal-Oxide-Semiconductor field-effect transistor
Applied Physics Letters, 2008Co-Authors: Satoru Miyamoto, Yukinori Ono, Katsuhiko Nishiguchi, Kohei M. Itoh, Akira FujiwaraAbstract:Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire Metal-Oxide-Semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.
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Single electron tunneling transistor with tunable barriers using silicon nanowire Metal-Oxide-Semiconductor field-effect transistor
Applied Physics Letters, 2006Co-Authors: Akira Fujiwara, Hideo Namatsu, Hiroshi Inokawa, Neil M Zimmerman, Yasuo Takahashi, Kenji Yamazaki, Stuart B. MartinAbstract:We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire Metal-Oxide-Semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. By using the flexible control of the tunable barriers, the systematic evolution from a single charge island to double islands was clearly observed. We obtained excellent reproducibility in the gate capacitances: values on the order of 10 aF, with the variation smaller than 1 aF. This flexibility and controllability both demonstrate that the device is highly designable to build a variety of SET devices based on complementary Metal-Oxide-Semiconductor technology. © 2006 American Institute of Physics
Stuart B. Martin - One of the best experts on this subject based on the ideXlab platform.
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Single electron tunneling transistor with tunable barriers using silicon nanowire Metal-Oxide-Semiconductor field-effect transistor
Applied Physics Letters, 2006Co-Authors: Akira Fujiwara, Hideo Namatsu, Hiroshi Inokawa, Neil M Zimmerman, Yasuo Takahashi, Kenji Yamazaki, Stuart B. MartinAbstract:We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire Metal-Oxide-Semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. By using the flexible control of the tunable barriers, the systematic evolution from a single charge island to double islands was clearly observed. We obtained excellent reproducibility in the gate capacitances: values on the order of 10 aF, with the variation smaller than 1 aF. This flexibility and controllability both demonstrate that the device is highly designable to build a variety of SET devices based on complementary Metal-Oxide-Semiconductor technology. © 2006 American Institute of Physics
Ferry Kienberger - One of the best experts on this subject based on the ideXlab platform.
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scanning microwave microscopy spectroscopy on Metal Oxide Semiconductor systems
Journal of Applied Physics, 2010Co-Authors: Jürgen Smoliner, Hans Peter Huber, Markus Hochleitner, M. Moertelmaier, Ferry KienbergerAbstract:In this paper, an analytical model for capacitance measurements by scanning microwave microscopy (SMM)/scanning microwave spectroscopy is presented. The tip-sample interactions are included by using the physics of Metal-Oxide-Semiconductor junctions and the influence of various experimental parameters, such as the operation frequency, tip bias, tip area, Oxide thickness, and sample doping are discussed. For calibrated carrier profiling it is shown that all relevant operation parameters of the SMM can be condensed into a single calibration constant and that the sample doping is obtained by using a simple analytical formula.
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Scanning microwave microscopy/spectroscopy on Metal-Oxide-Semiconductor systems
Journal of Applied Physics, 2010Co-Authors: Jürgen Smoliner, Hans Peter Huber, Markus Hochleitner, M. Moertelmaier, Ferry KienbergerAbstract:In this paper, an analytical model for capacitance measurements by scanning microwave microscopy (SMM)/scanning microwave spectroscopy is presented. The tip-sample interactions are included by using the physics of Metal-Oxide-Semiconductor junctions and the influence of various experimental parameters, such as the operation frequency, tip bias, tip area, Oxide thickness, and sample doping are discussed. For calibrated carrier profiling it is shown that all relevant operation parameters of the SMM can be condensed into a single calibration constant and that the sample doping is obtained by using a simple analytical formula.
Kevin J. Chen - One of the best experts on this subject based on the ideXlab platform.
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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process
Japanese Journal of Applied Physics, 2013Co-Authors: Chunlei Zhan, Kwok Wai Chan, Man Hon Samuel Owen, Kevin J. ChenAbstract:This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire Metal–Oxide–Semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary Metal–Oxide–Semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing LGD of 20 µm achieved an off-state breakdown voltage VBR of 1400 V and an on-state resistance Ron of 22 mΩcm2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion/Ioff of ~109 and low gate leakage current IG of ~10-11 A/mm were also obtained.
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algan gan on silicon Metal Oxide Semiconductor high electron mobility transistor with breakdown voltage of 800 v and on state resistance of 3 mω cm2 using a complementary Metal Oxide Semiconductor compatible gold free process
Applied Physics Express, 2012Co-Authors: Chunlei Zhan, Kwok Wai Chan, Kevin J. ChenAbstract:This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon Metal–Oxide–Semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary Metal–Oxide–Semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain LGD spacing of 5 µm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance Ron of 3 mΩ·cm2. In addition, subthreshold swing S of ∼97 mV/decade and Ion/Ioff ratio of ∼106 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 µm, the VBR achieved in this work is the highest.
Satoru Miyamoto - One of the best experts on this subject based on the ideXlab platform.
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silicon nanowire Metal-Oxide-Semiconductor field-effect transistor
Applied Physics Letters, 2008Co-Authors: Satoru Miyamoto, Yukinori Ono, Katsuhiko Nishiguchi, Kohei M. Itoh, Akira FujiwaraAbstract:Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire Metal-Oxide-Semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.