The Experts below are selected from a list of 279 Experts worldwide ranked by ideXlab platform
P. Juliet - One of the best experts on this subject based on the ideXlab platform.
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Deposition of Aluminium oxide thin films by reactive magnetron sputtering
Surface & Coatings Technology, 1999Co-Authors: Kari Koski, Jorma Holsa, P. JulietAbstract:Abstract Aluminium oxide thin films were deposited by direct current (d.c.) reactive magnetron sputtering on glass-slide, silicon wafer, stainless-steel and polycarbonate substrates. The thicknesses of the films were between 200 nm and 3.0 μm. The deposition was controlled by the target voltage to obtain stoichiometric thin films with a high deposition rate. The deposition process was studied in terms of target power, I–U characteristics of the target, sputtering gas pressure and substrate bias voltage. The film properties of interest were O/Al ratio, density, nanohardness, intrinsic stress, crystallographic structure and surface roughness. The deposition rate obtained for stress-free and transparent Aluminium oxide thin film was 215 nm min−1, 77% of the rate of Metallic Aluminium.
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Deposition of Aluminium oxide thin films by reactive magnetron sputtering
Surface and Coatings Technology, 1999Co-Authors: Kristian Koski, Jorma Holsa, P. JulietAbstract:Aluminium oxide thin films were deposited by direct current (d.c.) reactive magnetron sputtering on glass-slide, silicon wafer, stainless-steel and polycarbonate substrates. The thicknesses of the films were between 200nm and 3.0μm. The deposition was controlled by the target voltage to obtain stoichiometric thin films with a high deposition rate. The deposition process was studied in terms of target power, I-U characteristics of the target, sputtering gas pressure and substrate bias voltage. The film properties of interest were O/Al ratio, density, nanohardness, intrinsic stress, crystallographic structure and surface roughness. The deposition rate obtained for stress-free and transparent Aluminium oxide thin film was 215nmmin-1, 77% of the rate of Metallic Aluminium. © 1999 Elsevier Science S.A.
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Voltage controlled reactive sputtering process for Aluminium oxide thin films
Thin Solid Films, 1998Co-Authors: Kari Koski, Jorma Holsa, P. JulietAbstract:Aluminium oxide thin films were deposited by d.c. reactive magnetron sputtering. The deposition process was controlled by target voltage while target power was adjusted to constant value by oxygen gas flow. The maximum deposition rate obtained was 150 nm/min, 60% from the value of Metallic Aluminium thin film. A strong hysteresis effect could be avoided by controlling the deposition by target voltage. The oxygen gas was introduced immediate to the substrates by a punched circular gas inlet system. The O/Al ratio of the film deposited varied between 1.30 and 1.72. The films deposited were transparent insulators. The structure of Aluminium oxide was amorphous and columnar. The thickness of the films varied between 200 nm and 3 μm.
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Voltage controlled reactive sputtering process for Aluminium oxide thin films
Thin Solid Films, 1998Co-Authors: Kristian Koski, Jorma Holsa, P. JulietAbstract:Aluminium oxide thin films were deposited by d.c. reactive magnetron sputtering. The deposition process was controlled by target voltage while target power was adjusted to constant value by oxygen gas flow. The maximum deposition rate obtained was 150 nm/min, 60% from the value of Metallic Aluminium thin film. A strong hysteresis effect could be avoided by controlling the deposition by target voltage. The oxygen gas was introduced immediate to the substrates by a punched circular gas inlet system. The O/A1 ratio of the film deposited varied between 1.30 and 1.72. The films deposited were transparent insulators. The structure of Aluminium oxide was amorphous and columnar. The thickness of the films varied between 200 nm and 3 μm. © 1998 Elsevier Science S.A. All rights reserved.
Sharmistha Guha - One of the best experts on this subject based on the ideXlab platform.
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the remarkable role of water during the chemoselective reduction of ketones mediated by Metallic Aluminium
Tetrahedron Letters, 2004Co-Authors: Sanjay Bhar, Sharmistha GuhaAbstract:Abstract Diaryl ketones are reduced selectively to the corresponding benzhydrols in good yield by Aluminium powder in the presence of sodium hydroxide in the solvent system MeOH:H 2 O=2:1 whereas dialkyl ketones, α-tetralone, aryl alkyl ketones and cycloalkanones remain mostly unaffected. Interestingly, diaryl ketones remain totally unchanged by the present reagent combination in the absence of water, that is in anhydrous methanol.
Sanjay Bhar - One of the best experts on this subject based on the ideXlab platform.
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the remarkable role of water during the chemoselective reduction of ketones mediated by Metallic Aluminium
Tetrahedron Letters, 2004Co-Authors: Sanjay Bhar, Sharmistha GuhaAbstract:Abstract Diaryl ketones are reduced selectively to the corresponding benzhydrols in good yield by Aluminium powder in the presence of sodium hydroxide in the solvent system MeOH:H 2 O=2:1 whereas dialkyl ketones, α-tetralone, aryl alkyl ketones and cycloalkanones remain mostly unaffected. Interestingly, diaryl ketones remain totally unchanged by the present reagent combination in the absence of water, that is in anhydrous methanol.
Kristian Koski - One of the best experts on this subject based on the ideXlab platform.
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Deposition of Aluminium oxide thin films by reactive magnetron sputtering
Surface and Coatings Technology, 1999Co-Authors: Kristian Koski, Jorma Holsa, P. JulietAbstract:Aluminium oxide thin films were deposited by direct current (d.c.) reactive magnetron sputtering on glass-slide, silicon wafer, stainless-steel and polycarbonate substrates. The thicknesses of the films were between 200nm and 3.0μm. The deposition was controlled by the target voltage to obtain stoichiometric thin films with a high deposition rate. The deposition process was studied in terms of target power, I-U characteristics of the target, sputtering gas pressure and substrate bias voltage. The film properties of interest were O/Al ratio, density, nanohardness, intrinsic stress, crystallographic structure and surface roughness. The deposition rate obtained for stress-free and transparent Aluminium oxide thin film was 215nmmin-1, 77% of the rate of Metallic Aluminium. © 1999 Elsevier Science S.A.
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Voltage controlled reactive sputtering process for Aluminium oxide thin films
Thin Solid Films, 1998Co-Authors: Kristian Koski, Jorma Holsa, P. JulietAbstract:Aluminium oxide thin films were deposited by d.c. reactive magnetron sputtering. The deposition process was controlled by target voltage while target power was adjusted to constant value by oxygen gas flow. The maximum deposition rate obtained was 150 nm/min, 60% from the value of Metallic Aluminium thin film. A strong hysteresis effect could be avoided by controlling the deposition by target voltage. The oxygen gas was introduced immediate to the substrates by a punched circular gas inlet system. The O/A1 ratio of the film deposited varied between 1.30 and 1.72. The films deposited were transparent insulators. The structure of Aluminium oxide was amorphous and columnar. The thickness of the films varied between 200 nm and 3 μm. © 1998 Elsevier Science S.A. All rights reserved.
Jorma Holsa - One of the best experts on this subject based on the ideXlab platform.
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Deposition of Aluminium oxide thin films by reactive magnetron sputtering
Surface & Coatings Technology, 1999Co-Authors: Kari Koski, Jorma Holsa, P. JulietAbstract:Abstract Aluminium oxide thin films were deposited by direct current (d.c.) reactive magnetron sputtering on glass-slide, silicon wafer, stainless-steel and polycarbonate substrates. The thicknesses of the films were between 200 nm and 3.0 μm. The deposition was controlled by the target voltage to obtain stoichiometric thin films with a high deposition rate. The deposition process was studied in terms of target power, I–U characteristics of the target, sputtering gas pressure and substrate bias voltage. The film properties of interest were O/Al ratio, density, nanohardness, intrinsic stress, crystallographic structure and surface roughness. The deposition rate obtained for stress-free and transparent Aluminium oxide thin film was 215 nm min−1, 77% of the rate of Metallic Aluminium.
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Deposition of Aluminium oxide thin films by reactive magnetron sputtering
Surface and Coatings Technology, 1999Co-Authors: Kristian Koski, Jorma Holsa, P. JulietAbstract:Aluminium oxide thin films were deposited by direct current (d.c.) reactive magnetron sputtering on glass-slide, silicon wafer, stainless-steel and polycarbonate substrates. The thicknesses of the films were between 200nm and 3.0μm. The deposition was controlled by the target voltage to obtain stoichiometric thin films with a high deposition rate. The deposition process was studied in terms of target power, I-U characteristics of the target, sputtering gas pressure and substrate bias voltage. The film properties of interest were O/Al ratio, density, nanohardness, intrinsic stress, crystallographic structure and surface roughness. The deposition rate obtained for stress-free and transparent Aluminium oxide thin film was 215nmmin-1, 77% of the rate of Metallic Aluminium. © 1999 Elsevier Science S.A.
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Voltage controlled reactive sputtering process for Aluminium oxide thin films
Thin Solid Films, 1998Co-Authors: Kari Koski, Jorma Holsa, P. JulietAbstract:Aluminium oxide thin films were deposited by d.c. reactive magnetron sputtering. The deposition process was controlled by target voltage while target power was adjusted to constant value by oxygen gas flow. The maximum deposition rate obtained was 150 nm/min, 60% from the value of Metallic Aluminium thin film. A strong hysteresis effect could be avoided by controlling the deposition by target voltage. The oxygen gas was introduced immediate to the substrates by a punched circular gas inlet system. The O/Al ratio of the film deposited varied between 1.30 and 1.72. The films deposited were transparent insulators. The structure of Aluminium oxide was amorphous and columnar. The thickness of the films varied between 200 nm and 3 μm.
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Voltage controlled reactive sputtering process for Aluminium oxide thin films
Thin Solid Films, 1998Co-Authors: Kristian Koski, Jorma Holsa, P. JulietAbstract:Aluminium oxide thin films were deposited by d.c. reactive magnetron sputtering. The deposition process was controlled by target voltage while target power was adjusted to constant value by oxygen gas flow. The maximum deposition rate obtained was 150 nm/min, 60% from the value of Metallic Aluminium thin film. A strong hysteresis effect could be avoided by controlling the deposition by target voltage. The oxygen gas was introduced immediate to the substrates by a punched circular gas inlet system. The O/A1 ratio of the film deposited varied between 1.30 and 1.72. The films deposited were transparent insulators. The structure of Aluminium oxide was amorphous and columnar. The thickness of the films varied between 200 nm and 3 μm. © 1998 Elsevier Science S.A. All rights reserved.