The Experts below are selected from a list of 5946 Experts worldwide ranked by ideXlab platform
Inder J Bahl - One of the best experts on this subject based on the ideXlab platform.
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Microwave and millimeter wave Integrated Circuits
IEEE Transactions on Microwave Theory and Techniques, 2002Co-Authors: E C Niehenke, R.a. Pucel, Inder J BahlAbstract:This historical review is divided into three sections: Microwave Integrated Circuits (MICs), monolithic Microwave Integrated Circuits (MMICs), and MIC and millimeter-wave Integrated-circuit applications.
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low loss multilayer microstrip line for monolithic Microwave Integrated Circuits applications
International Journal of Rf and Microwave Computer-aided Engineering, 1998Co-Authors: Inder J Bahl, Edward L Griffin, John Dilley, Matt BalzanAbstract:This paper describes the multilayer microstrip structure using low dielectric constant polyimide as a buffer layer between the microstrip conductor and the GaAs substrate to reduce dissipation loss, especially for very high impedance microstrip lines. The new structure provides about half the dissipation loss and about 40% higher characteristic impedance in comparison to the conventional microstrip line on GaAs substrate having the same conductor widths. An empirical formula for the equivalent dielectric constant compatible with commercial computer-aided design tools was developed to design monolithic Microwave Integrated Circuits (MMICs) using this medium. The multilayer microstrip structure is compatible with ITT's 4′ MSAG® process which uses polyimide for crossovers and scratch protection. The present structure has great potential in realizing low loss and wideband matching networks including low noise, high power, and high efficiency amplifiers, and passive components on GaAs substrate with improved insertion loss and bandwidth performance, and three-dimensional MMICs. © 1998 John Wiley & Sons, Inc. Int J RF and Microwave CAE 8: 441–454, 1998
George K. Celler - One of the best experts on this subject based on the ideXlab platform.
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Experimental characterization and modeling of the bending strain effect on flexible Microwave diodes and switches on plastic substrate
Applied Physics Letters, 2011Co-Authors: Guoxuan Qin, Laichun Yang, Jung-hun Seo, Hao-chih Yuan, George K. CellerAbstract:In this letter, comprehensive experimental characterization and modeling of the bending strain effect on flexible Microwave diodes and switches are conducted. The flexible Microwave devices/Circuits indicate different performance dependence with bending strains under different bias conditions. It is observed that individual diodes and switch Circuits have the same dominant factors (series resistance and inductance) for radio frequency properties under bending conditions. More importantly, variations of the dominant factors are almost only dependent on the strains and regardless of diode areas or connection topology. The study provides guidelines for designing and using high-speed diodes/switches for flexible monolithic Microwave Integrated Circuits.
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impact of strain on radio frequency characteristics of flexible Microwave single crystalline silicon nanomembrane p intrinsic n diodes on plastic substrates
Applied Physics Letters, 2010Co-Authors: Guoxuan Qin, Hao-chih Yuan, George K. CellerAbstract:This letter presents radio frequency (rf) characterization of flexible Microwave single-crystalline silicon nanomembrane (SiNM) p-intrinsic-n (PIN) diodes on plastic substrate under various uniaxial mechanical tensile bending strains. The flexible single-crystalline SiNM PIN diode shows significant/negligible performance enhancement on strains under forward/reverse operation modes from dc to 20 GHz. An rf strain equivalent circuit model is developed to analyze the underlying mechanism and reveals unproportional device parameters change with bending strains (∼0.4% tensile strain induces ∼10% change for diode internal and parasitic inductance/resistance). The study provides guidelines of properly designing and using single-crystalline SiNMs diodes for flexible monolithic Microwave Integrated Circuits.
Po-wen Chiu - One of the best experts on this subject based on the ideXlab platform.
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Gigahertz flexible graphene transistors for Microwave Integrated Circuits
ACS Nano, 2014Co-Authors: Chao Hui Yeh, Yi Wei Lain, Yu Chiao Chiu, David Ricardo Moyano, Chen-hung Liao, Shawn S H Hsu, Po-wen ChiuAbstract:Flexible Integrated Circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene Microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz Microwave Integrated Circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.
Guoxuan Qin - One of the best experts on this subject based on the ideXlab platform.
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Experimental characterization and modeling of the bending strain effect on flexible Microwave diodes and switches on plastic substrate
Applied Physics Letters, 2011Co-Authors: Guoxuan Qin, Laichun Yang, Jung-hun Seo, Hao-chih Yuan, George K. CellerAbstract:In this letter, comprehensive experimental characterization and modeling of the bending strain effect on flexible Microwave diodes and switches are conducted. The flexible Microwave devices/Circuits indicate different performance dependence with bending strains under different bias conditions. It is observed that individual diodes and switch Circuits have the same dominant factors (series resistance and inductance) for radio frequency properties under bending conditions. More importantly, variations of the dominant factors are almost only dependent on the strains and regardless of diode areas or connection topology. The study provides guidelines for designing and using high-speed diodes/switches for flexible monolithic Microwave Integrated Circuits.
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impact of strain on radio frequency characteristics of flexible Microwave single crystalline silicon nanomembrane p intrinsic n diodes on plastic substrates
Applied Physics Letters, 2010Co-Authors: Guoxuan Qin, Hao-chih Yuan, George K. CellerAbstract:This letter presents radio frequency (rf) characterization of flexible Microwave single-crystalline silicon nanomembrane (SiNM) p-intrinsic-n (PIN) diodes on plastic substrate under various uniaxial mechanical tensile bending strains. The flexible single-crystalline SiNM PIN diode shows significant/negligible performance enhancement on strains under forward/reverse operation modes from dc to 20 GHz. An rf strain equivalent circuit model is developed to analyze the underlying mechanism and reveals unproportional device parameters change with bending strains (∼0.4% tensile strain induces ∼10% change for diode internal and parasitic inductance/resistance). The study provides guidelines of properly designing and using single-crystalline SiNMs diodes for flexible monolithic Microwave Integrated Circuits.
Chao Hui Yeh - One of the best experts on this subject based on the ideXlab platform.
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Gigahertz flexible graphene transistors for Microwave Integrated Circuits
ACS Nano, 2014Co-Authors: Chao Hui Yeh, Yi Wei Lain, Yu Chiao Chiu, David Ricardo Moyano, Chen-hung Liao, Shawn S H Hsu, Po-wen ChiuAbstract:Flexible Integrated Circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene Microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz Microwave Integrated Circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.