The Experts below are selected from a list of 312 Experts worldwide ranked by ideXlab platform
Jürgen H. Werner - One of the best experts on this subject based on the ideXlab platform.
-
Flexible Monocrystalline Si films for thin film devices from transfer processes
MRS Proceedings, 2011Co-Authors: Christopher Berge, Thomas A. Wagner, W. Brendle, Cecilia Craff-castillo, Markus Schubert, Jürgen H. WernerAbstract:Transfer of Monocrystalline silicon films to arbitrary foreign substrates is a promising way for the fabrication of high quality silicon films on foreign substrates, demonstrated by solar cell efficiencies on glass as high as 16.6 % in the past. Transfer technologies also enable the use of flexible substrates. This paper investigates the mechanical stability of the separation layer for two different morphologies. First measurements on the minimum bending radius of unsupported silicon films are presented that allow us to estimate minimum curvatures for flexible Monocrystalline devices. Finally, we report the first flexible Monocrystalline thin film silicon solar cell of 4 cm 2 with an independently confirmed efficiency of 14.6 %.
-
150-mm layer transfer for Monocrystalline silicon solar cells
Solar Energy Materials and Solar Cells, 2006Co-Authors: Christopher Berge, W. Brendle, Markus Schubert, M. Zhu, Jürgen H. WernerAbstract:We report on recent improvements concerning the transfer of Monocrystalline silicon layers to plastic substrates for flexible solar cell applications. Finite element numerical modeling of the etching current density distribution allows for optimizing our electrochemical etching setup for separation layer formation. By modifying the setup according to the simulation results, we are now able to transfer 25 μm thick Monocrystalline silicon sheets with up to 150 mm in diameter.
-
Monocrystalline Si Films from Transfer Processes for Thin Film Devices
MRS Proceedings, 2001Co-Authors: Ralf B. Bergmann, T. J. Rinke, Christopher Berge, Jürgen H. WernerAbstract:AbstractThe transfer of thin Monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of Monocrystalline Si films on foreign substrates based on the formation ofquasi-MonocrystallineSi-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three Monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.
-
Quasi-Monocrystalline silicon for thin-film devices
Applied Physics A: Materials Science & Processing, 1999Co-Authors: T. J. Rinke, Ralf B. Bergmann, Jürgen H. WernerAbstract:Thermal crystallization of a double layer porous Si film creates a Monocrystalline Si film with a thin separation layer between the Si film and the reusable starting wafer. The process enables transfer of thin Monocrystalline Si films to foreign substrates, whereby devices may be formed before or after separation of the film. Sub-micrometer thick films are almost compact, while films with a thickness of several μm contain voids, and are therefore termed “quasi-Monocrystalline”. Internal voids strongly enhance optical absorption by light scattering. The hole mobility is 78 cm2 V-1 s-1 at a p-type starting wafer resistivity of 0.05 Ω cm.
-
Structure and Properties of Quasi-Monocrystalline Silicon Thin-Films
MRS Proceedings, 1999Co-Authors: T. J. Rinke, Ralf B. Bergmann, Jürgen H. WernerAbstract:This contribution describes the preparation of a single crystalline Si thin-film separable from a reusable Si wafer. The method relies on: i) etching of a porous silicon layer ii) high-temperature annealing and iii) transfer of the recrystallized film to a foreign substrate. As a result of the process we obtain 1 to 30 μm thick Monocrystalline Si films that contain voids with a size of several 100 nm. Due to its “swiss-cheese-like” structure the material is termed as “quasi-Monocrystalline Si”. Sub micrometer thin layers are almost compact, while in several micron thick films voids cause scattering of incident light. This effect increases the effective absorption coefficient by light trapping and seems promising for the application of our quasi-Monocrystalline films in thin film solar cells. Quasi-Monocrystalline p-type silicon reaches a hole mobility of 78 cm 2 / Vs measured by room-temperature Hall-effect. High carrier mobility and adjustable optical characteristics make these films suitable for display and photovoltaic applications. Quasi-Monocrystalline films are processed using conventional high-temperature Si processing; finished devices can be transferred to a foreign substrate such as glass, while the starting wafer can be reused several times.
Christopher Berge - One of the best experts on this subject based on the ideXlab platform.
-
Flexible Monocrystalline Si films for thin film devices from transfer processes
MRS Proceedings, 2011Co-Authors: Christopher Berge, Thomas A. Wagner, W. Brendle, Cecilia Craff-castillo, Markus Schubert, Jürgen H. WernerAbstract:Transfer of Monocrystalline silicon films to arbitrary foreign substrates is a promising way for the fabrication of high quality silicon films on foreign substrates, demonstrated by solar cell efficiencies on glass as high as 16.6 % in the past. Transfer technologies also enable the use of flexible substrates. This paper investigates the mechanical stability of the separation layer for two different morphologies. First measurements on the minimum bending radius of unsupported silicon films are presented that allow us to estimate minimum curvatures for flexible Monocrystalline devices. Finally, we report the first flexible Monocrystalline thin film silicon solar cell of 4 cm 2 with an independently confirmed efficiency of 14.6 %.
-
150-mm layer transfer for Monocrystalline silicon solar cells
Solar Energy Materials and Solar Cells, 2006Co-Authors: Christopher Berge, W. Brendle, Markus Schubert, M. Zhu, Jürgen H. WernerAbstract:We report on recent improvements concerning the transfer of Monocrystalline silicon layers to plastic substrates for flexible solar cell applications. Finite element numerical modeling of the etching current density distribution allows for optimizing our electrochemical etching setup for separation layer formation. By modifying the setup according to the simulation results, we are now able to transfer 25 μm thick Monocrystalline silicon sheets with up to 150 mm in diameter.
-
advances in Monocrystalline si thin film solar cells by layer transfer
Solar Energy Materials and Solar Cells, 2002Co-Authors: Ralf B. Bergmann, T. J. Rinke, Christopher Berge, Jan Schmidt, J H WernerAbstract:Abstract The transfer of Monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-Monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-Monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5 μm, respectively, and a cell area of 4 cm2. Device simulations indicate an efficiency potential above 20%.
-
Monocrystalline Si Films from Transfer Processes for Thin Film Devices
MRS Proceedings, 2001Co-Authors: Ralf B. Bergmann, T. J. Rinke, Christopher Berge, Jürgen H. WernerAbstract:AbstractThe transfer of thin Monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of Monocrystalline Si films on foreign substrates based on the formation ofquasi-MonocrystallineSi-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three Monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.
Ralf B. Bergmann - One of the best experts on this subject based on the ideXlab platform.
-
advances in Monocrystalline si thin film solar cells by layer transfer
Solar Energy Materials and Solar Cells, 2002Co-Authors: Ralf B. Bergmann, T. J. Rinke, Christopher Berge, Jan Schmidt, J H WernerAbstract:Abstract The transfer of Monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-Monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-Monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5 μm, respectively, and a cell area of 4 cm2. Device simulations indicate an efficiency potential above 20%.
-
Monocrystalline Si Films from Transfer Processes for Thin Film Devices
MRS Proceedings, 2001Co-Authors: Ralf B. Bergmann, T. J. Rinke, Christopher Berge, Jürgen H. WernerAbstract:AbstractThe transfer of thin Monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of Monocrystalline Si films on foreign substrates based on the formation ofquasi-MonocrystallineSi-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three Monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.
-
Quasi-Monocrystalline silicon for thin-film devices
Applied Physics A: Materials Science & Processing, 1999Co-Authors: T. J. Rinke, Ralf B. Bergmann, Jürgen H. WernerAbstract:Thermal crystallization of a double layer porous Si film creates a Monocrystalline Si film with a thin separation layer between the Si film and the reusable starting wafer. The process enables transfer of thin Monocrystalline Si films to foreign substrates, whereby devices may be formed before or after separation of the film. Sub-micrometer thick films are almost compact, while films with a thickness of several μm contain voids, and are therefore termed “quasi-Monocrystalline”. Internal voids strongly enhance optical absorption by light scattering. The hole mobility is 78 cm2 V-1 s-1 at a p-type starting wafer resistivity of 0.05 Ω cm.
-
Structure and Properties of Quasi-Monocrystalline Silicon Thin-Films
MRS Proceedings, 1999Co-Authors: T. J. Rinke, Ralf B. Bergmann, Jürgen H. WernerAbstract:This contribution describes the preparation of a single crystalline Si thin-film separable from a reusable Si wafer. The method relies on: i) etching of a porous silicon layer ii) high-temperature annealing and iii) transfer of the recrystallized film to a foreign substrate. As a result of the process we obtain 1 to 30 μm thick Monocrystalline Si films that contain voids with a size of several 100 nm. Due to its “swiss-cheese-like” structure the material is termed as “quasi-Monocrystalline Si”. Sub micrometer thin layers are almost compact, while in several micron thick films voids cause scattering of incident light. This effect increases the effective absorption coefficient by light trapping and seems promising for the application of our quasi-Monocrystalline films in thin film solar cells. Quasi-Monocrystalline p-type silicon reaches a hole mobility of 78 cm 2 / Vs measured by room-temperature Hall-effect. High carrier mobility and adjustable optical characteristics make these films suitable for display and photovoltaic applications. Quasi-Monocrystalline films are processed using conventional high-temperature Si processing; finished devices can be transferred to a foreign substrate such as glass, while the starting wafer can be reused several times.
-
Thin film solar cells on glass by transfer of Monocrystalline Si films
International Journal of Photoenergy, 1999Co-Authors: Ralf B. Bergmann, T. J. Rinke, R. M. Hausner, M. Grauvogl, M. Vetter, Jürgen H. WernerAbstract:Thin film solar cells based on Monocrystalline Si films are transferred to a glass superstrate. Chemical vapor deposition serves to epitaxially deposit Si on quasi-Monocrystalline Si films obtained from thermal crystallization of a double layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-Monocrystalline film from the starting Si wafer. We presently achieve an independently confirmed solar cell conversion efficiency of 9:26%. Ray tracing studies in combination with electrical device simulation indicate an efficiency potential of around 17% using simple device processing and moderate assumptions on minority carrier lifetime and surface recombination.
T. J. Rinke - One of the best experts on this subject based on the ideXlab platform.
-
advances in Monocrystalline si thin film solar cells by layer transfer
Solar Energy Materials and Solar Cells, 2002Co-Authors: Ralf B. Bergmann, T. J. Rinke, Christopher Berge, Jan Schmidt, J H WernerAbstract:Abstract The transfer of Monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-Monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-Monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5 μm, respectively, and a cell area of 4 cm2. Device simulations indicate an efficiency potential above 20%.
-
Monocrystalline Si Films from Transfer Processes for Thin Film Devices
MRS Proceedings, 2001Co-Authors: Ralf B. Bergmann, T. J. Rinke, Christopher Berge, Jürgen H. WernerAbstract:AbstractThe transfer of thin Monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of Monocrystalline Si films on foreign substrates based on the formation ofquasi-MonocrystallineSi-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three Monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.
-
Quasi-Monocrystalline silicon for thin-film devices
Applied Physics A: Materials Science & Processing, 1999Co-Authors: T. J. Rinke, Ralf B. Bergmann, Jürgen H. WernerAbstract:Thermal crystallization of a double layer porous Si film creates a Monocrystalline Si film with a thin separation layer between the Si film and the reusable starting wafer. The process enables transfer of thin Monocrystalline Si films to foreign substrates, whereby devices may be formed before or after separation of the film. Sub-micrometer thick films are almost compact, while films with a thickness of several μm contain voids, and are therefore termed “quasi-Monocrystalline”. Internal voids strongly enhance optical absorption by light scattering. The hole mobility is 78 cm2 V-1 s-1 at a p-type starting wafer resistivity of 0.05 Ω cm.
-
Structure and Properties of Quasi-Monocrystalline Silicon Thin-Films
MRS Proceedings, 1999Co-Authors: T. J. Rinke, Ralf B. Bergmann, Jürgen H. WernerAbstract:This contribution describes the preparation of a single crystalline Si thin-film separable from a reusable Si wafer. The method relies on: i) etching of a porous silicon layer ii) high-temperature annealing and iii) transfer of the recrystallized film to a foreign substrate. As a result of the process we obtain 1 to 30 μm thick Monocrystalline Si films that contain voids with a size of several 100 nm. Due to its “swiss-cheese-like” structure the material is termed as “quasi-Monocrystalline Si”. Sub micrometer thin layers are almost compact, while in several micron thick films voids cause scattering of incident light. This effect increases the effective absorption coefficient by light trapping and seems promising for the application of our quasi-Monocrystalline films in thin film solar cells. Quasi-Monocrystalline p-type silicon reaches a hole mobility of 78 cm 2 / Vs measured by room-temperature Hall-effect. High carrier mobility and adjustable optical characteristics make these films suitable for display and photovoltaic applications. Quasi-Monocrystalline films are processed using conventional high-temperature Si processing; finished devices can be transferred to a foreign substrate such as glass, while the starting wafer can be reused several times.
-
Thin film solar cells on glass by transfer of Monocrystalline Si films
International Journal of Photoenergy, 1999Co-Authors: Ralf B. Bergmann, T. J. Rinke, R. M. Hausner, M. Grauvogl, M. Vetter, Jürgen H. WernerAbstract:Thin film solar cells based on Monocrystalline Si films are transferred to a glass superstrate. Chemical vapor deposition serves to epitaxially deposit Si on quasi-Monocrystalline Si films obtained from thermal crystallization of a double layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-Monocrystalline film from the starting Si wafer. We presently achieve an independently confirmed solar cell conversion efficiency of 9:26%. Ray tracing studies in combination with electrical device simulation indicate an efficiency potential of around 17% using simple device processing and moderate assumptions on minority carrier lifetime and surface recombination.
J H Werner - One of the best experts on this subject based on the ideXlab platform.
-
advances in Monocrystalline si thin film solar cells by layer transfer
Solar Energy Materials and Solar Cells, 2002Co-Authors: Ralf B. Bergmann, T. J. Rinke, Christopher Berge, Jan Schmidt, J H WernerAbstract:Abstract The transfer of Monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-Monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-Monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5 μm, respectively, and a cell area of 4 cm2. Device simulations indicate an efficiency potential above 20%.