The Experts below are selected from a list of 5580 Experts worldwide ranked by ideXlab platform

Akihiko Hirata - One of the best experts on this subject based on the ideXlab platform.

  • 120 ghz band 20 gbit s transmitter and receiver mmics using quadrature phase shift keying
    European Microwave Integrated Circuit Conference, 2012
    Co-Authors: Hiroyuki Takahashi, Akihiko Hirata, Jun Takeuchi, Naoya Kukutsu, Toshihiko Kosugi, K Murata
    Abstract:

    This paper describes a 120-GHz-band quadrature phase shift keying (QPSK) transmitter and receiver fabricated on microwave Monolithic Integrated Circuits (MMICs). The MMICs were fabricated using 0.1-µm-gate InP HEMTs and can handle 20-Gbit/s data streams. The transmitter MMIC consists of a QPSK modulator with direct modulation, differential amplifiers for data, a power amplifier, and an output-power monitor circuit. A differentially coherent detector, voltage-controlled phase shifter, and low-noise amplifier are Monolithically Integrated on a receiver MMIC. The QPSK transmitter and receiver MMICs were mounted in WR-8 waveguide modules to evaluate the data transmission performance. The bit error rate (BER) for 22.2-Gbit/s pseudorandom binary sequence (PRBS) 27−1 data is smaller than 10−10 at a receiver power of −35 dBm.

  • 120 ghz band wireless link technologies for outdoor 10 gbit s data transmission
    IEEE Transactions on Microwave Theory and Techniques, 2012
    Co-Authors: Akihiko Hirata, Hiroyuki Takahashi, Jun Takeuchi, Naoya Kukutsu, Toshihiko Kosugi, K Murata, Hiroyoshi Togo, Makoto Yaita, K Aihara, Yasuhiro Sato
    Abstract:

    Our progress in 120-GHz-band wireless link technologies enables us to transmit 10-Gbit/s data transmission over a distance of more than 1 km. The 120-GHz-band wireless link uses high-speed uni-traveling carrier photodiodes (UTC-PD) and InP high-electron mobility transistor (HEMT) millimeter-wave (MMW) Monolithic Integrated Circuits (MMICs) for the generation of MMW signals. We investigate the maximum output power of these devices and compare the phase noise of MMW signals generated by UTC-PDs and InP HEMT MMICs. We describe the antennas we used and their operation technologies. Finally, we investigate the dependence of transmission distance on availability using the statistical rain attenuation data. The calculation results show that the 120-GHz-band wireless link can transmit 10-Gbit/s data over a distance of 1 km with availability of 99.999%.

  • 120 ghz band bpsk modulator and demodulator for 10 gbit s data transmission
    International Microwave Symposium, 2009
    Co-Authors: Hiroyuki Takahashi, Akihiko Hirata, Toshihiko Kosugi, K Murata, Naoya Kukutsu
    Abstract:

    This paper presents a 120-GHz band binary phase shift keying (BPSK) modulator and demodulator fabricated on microwave Monolithic Integrated Circuits (MMICs) for a 10-Gbit/s wireless link. The direct-conversion modulator consists of a 180° hybrid coupler, gain-control amplifiers, and Wilkinson combiner. The delay demodulator has a 100-ps delay line made of coplanar waveguides and a voltage-controlled phase shifter. The modulator MMIC exhibits a static vector error magnitude of 5%. The modulator and demodulator MMICs were mounted in WR-8 waveguide modules to evaluate the characteristics of 10-Gbit/s transmission. A bit error rate (BER) for 10-Gbit/s pseudorandom binary sequence (PRBS) 27-1 data was 10−12.

  • 10 gbit s wireless link using inp hemt mmics for generating 120 ghz band millimeter wave signal
    IEEE Transactions on Microwave Theory and Techniques, 2009
    Co-Authors: Akihiko Hirata, Naoya Kukutsu, Toshihiko Kosugi, R Yamaguchi, Hiroshi Takahashi, K Murata, Tadao Nagatsuma, Yuichi Kado, N Iai, S Okabe
    Abstract:

    We have developed a 120-GHz-band wireless link whose maximum transmission data rate is 11.1 Gbit/s. The wireless link uses millimeter-wave Monolithic Integrated Circuits (MMICs) for the generation of a 120-GHz-band millimeter-wave wireless signal. The MMICs were fabricated using 0.1-mum-gate InP-HEMTs and coplanar waveguides. The wireless link can handle four kinds of data rate for OC-192 and 10-Gbit Ethernet standards with and without forward error correction (FEC). We succeeded in the error-free transmission of a 10-Gbit/s signal over a distance of 800 m. The introduction of FEC into the 120-GHz-band wireless link decreased the minimum received power for error-free transmission, and improved the reliability of the link.

Ingmar Kallfass - One of the best experts on this subject based on the ideXlab platform.

  • A superheterodyne 300 GHz wireless link for ultra-fast terahertz communication systems
    International Journal of Microwave and Wireless Technologies, 2020
    Co-Authors: Iulia Dan, G Ducournau, Shintaro Hisatake, Pascal Szriftgiser, Ralfpeter Braun, Ingmar Kallfass
    Abstract:

    A superheterodyne transmission scheme is adopted and analyzed in a 300 GHz wireless point-to-point link. This was realized using two different intermediate frequency (IF) systems. The first uses fast digital synthesis which provides an IF signal centered around a carrier frequency of 10 GHz. The second involves the usage of commercially available mixers, which work as direct up- and down-converters, to generate the IF input and output. The radio frequency components are based on millimeterwave Monolithic Integrated Circuits at a center frequency of 300 GHz. Transmission experiments over distances up to 10 m are carried out. Data rates of up to 60 Gbps using the first IF option and up to 24 Gbps using the second IF option are achieved. Modulation formats up to 32QAM are successfully transmitted. The linearity of this link and of its components is analyzed in detail. Two local oscillators (LOs), a photonics-based source and a commercially available electronic source are employed and compared. This work validates the concept of superheterodyne architecture for integration in a beyond-5G network, supplying important guidelines that have to be taken into account in the design steps of a future wireless system.

  • a superheterodyne 300 ghz wireless link for ultra fast terahertz communication systems
    European Microwave Conference, 2019
    Co-Authors: Iulia Dan, G Ducournau, Shintaro Hisatake, Pascal Szriftgiser, Ralfpeter Braun, Ingmar Kallfass
    Abstract:

    This paper presents an all-electronic superheterodyne wireless system based on millimeterwave Monolithic Integrated Circuits at a center frequency of 300 GHz. Superheterodyne operation is attractive for compliance with the recent IEEE802.15.3d frequency standard. The super-heterodyne transmission is realized, both, with mixers operating at a frequency of 10 GHz, and with an arbitrary waveform generator output centered around 10 GHz. The paper compares both options in terms of error vector magnitude for different baud rates and modulation formats. Data rates of up to 60 Gbps and distances of up to 10 meters are achieved using complex modulated signals like 16-QAM and 32-QAM.

  • 64 gbit s transmission over 850 m fixed wireless link at 240 ghz carrier frequency
    Journal of Infrared Millimeter and Terahertz Waves, 2015
    Co-Authors: Ingmar Kallfass, U J Lewark, Axel Tessmann, F Boes, T Messinger, J Antes, Anns Inam, R Henneberger
    Abstract:

    A directive fixed wireless link operating at a center frequency of 240 GHz achieves a data rate of 64 Gbit/s over a transmission distance of 850 m using QPSK and 8PSK modulation, in a single-channel approach without the use of spatial diversity concepts. The analog transmit and receive frontend consists of active Monolithic Integrated Circuits including broadband RF amplification and quadrature subharmonic mixer channels. The analog frontend is addressed by 64 GSa/s ADC and DAC boards, which are amenable to real-time data transmission. A link budget calculation allows for the estimation of the performance under adverse weather conditions.

  • balanced active frequency multipliers for w band signal sources
    European Microwave Integrated Circuit Conference, 2011
    Co-Authors: Ingmar Kallfass, U J Lewark, M Riessle, Hermann Massler, Axel Tessmann, Manfred Zink, Marija Kuri, Arnulf Leuther
    Abstract:

    The design and performance of millimeter-wave Monolithic Integrated Circuits implementing active balanced frequency multipliers for the W-band (75–110 GHz) is presented. The multipliers by eight and twelve are realized in a 100 nm gatelength metamorphic high electron mobility transistor technology. A novel circuit architecture using a cascade of active balanced frequency doubler and tripler stages in combination with active unbalanced-to-balanced converters is adopted in order to combine very broadband operation with high spectral purity of the output signal. On the module level, the multiplier by twelve achieves an output power of −1.5 dBm and associated conversion gain of 2.5 dB in the frequency range from 78 to 100 GHz, corresponding to a relative bandwidth of 24.7%. Within this frequency range, unwanted harmonics are suppressed by at least 12 dB with respect to the twelfth harmonic. The multiplier by eight achieves an output power of 6.9 dBm, associated conversion gain of 8.9 dB and harmonic suppression of 13 dBc in the frequency range from 84 to 101 GHz.

  • metamorphic hemt technology for submillimeter wave mmic applications
    International Conference on Indium Phosphide and Related Materials, 2010
    Co-Authors: Arnulf Leuther, Hermann Massler, Axel Tessmann, Ingmar Kallfass, R Loesch, M Schlechtweg, M Mikulla, O Ambacher
    Abstract:

    Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length were developed for the fabrication of submillimeter-wave Monolithic Integrated Circuits (S-MMICs) operating at 300 GHz and beyond. Heterostructures with very high electron sheet density of 6.1×1012 cm−2 and 9800 cm2/Vs electron mobility were grown on 4” GaAs substrates using a graded quaternary InAlGaAs buffer layer. For proper device scaling channel-gate distance and source resistance were reduced. Maximum transconductance of 2500 mS/mm and a transit frequency of 515 GHz were achieved for the 35 nm mHEMT with 2 × 10 µm gate-width. Already the 50 nm technology allows the realization of S-MMIC operation frequencies up to 320 GHz, the current limit of on-wafer probe availability. A compact four-stage H-band amplifier circuit based on a grounded coplanar waveguide (GCPW) layout is presented in 50 and 35 nm technology, respectively. The 50 nm mHEMT amplifier has a linear gain of 19.5 dB at 320 GHz and more than 15 dB between 240 and 320 GHz. The same amplifier utilizing 35 nm gate-length transistors achieves more than 20 dB gain within the entire H-band from 220 to 320 GHz.

Naoya Kukutsu - One of the best experts on this subject based on the ideXlab platform.

  • 120 ghz band 20 gbit s transmitter and receiver mmics using quadrature phase shift keying
    European Microwave Integrated Circuit Conference, 2012
    Co-Authors: Hiroyuki Takahashi, Akihiko Hirata, Jun Takeuchi, Naoya Kukutsu, Toshihiko Kosugi, K Murata
    Abstract:

    This paper describes a 120-GHz-band quadrature phase shift keying (QPSK) transmitter and receiver fabricated on microwave Monolithic Integrated Circuits (MMICs). The MMICs were fabricated using 0.1-µm-gate InP HEMTs and can handle 20-Gbit/s data streams. The transmitter MMIC consists of a QPSK modulator with direct modulation, differential amplifiers for data, a power amplifier, and an output-power monitor circuit. A differentially coherent detector, voltage-controlled phase shifter, and low-noise amplifier are Monolithically Integrated on a receiver MMIC. The QPSK transmitter and receiver MMICs were mounted in WR-8 waveguide modules to evaluate the data transmission performance. The bit error rate (BER) for 22.2-Gbit/s pseudorandom binary sequence (PRBS) 27−1 data is smaller than 10−10 at a receiver power of −35 dBm.

  • 120 ghz band wireless link technologies for outdoor 10 gbit s data transmission
    IEEE Transactions on Microwave Theory and Techniques, 2012
    Co-Authors: Akihiko Hirata, Hiroyuki Takahashi, Jun Takeuchi, Naoya Kukutsu, Toshihiko Kosugi, K Murata, Hiroyoshi Togo, Makoto Yaita, K Aihara, Yasuhiro Sato
    Abstract:

    Our progress in 120-GHz-band wireless link technologies enables us to transmit 10-Gbit/s data transmission over a distance of more than 1 km. The 120-GHz-band wireless link uses high-speed uni-traveling carrier photodiodes (UTC-PD) and InP high-electron mobility transistor (HEMT) millimeter-wave (MMW) Monolithic Integrated Circuits (MMICs) for the generation of MMW signals. We investigate the maximum output power of these devices and compare the phase noise of MMW signals generated by UTC-PDs and InP HEMT MMICs. We describe the antennas we used and their operation technologies. Finally, we investigate the dependence of transmission distance on availability using the statistical rain attenuation data. The calculation results show that the 120-GHz-band wireless link can transmit 10-Gbit/s data over a distance of 1 km with availability of 99.999%.

  • 120 ghz band bpsk modulator and demodulator for 10 gbit s data transmission
    International Microwave Symposium, 2009
    Co-Authors: Hiroyuki Takahashi, Akihiko Hirata, Toshihiko Kosugi, K Murata, Naoya Kukutsu
    Abstract:

    This paper presents a 120-GHz band binary phase shift keying (BPSK) modulator and demodulator fabricated on microwave Monolithic Integrated Circuits (MMICs) for a 10-Gbit/s wireless link. The direct-conversion modulator consists of a 180° hybrid coupler, gain-control amplifiers, and Wilkinson combiner. The delay demodulator has a 100-ps delay line made of coplanar waveguides and a voltage-controlled phase shifter. The modulator MMIC exhibits a static vector error magnitude of 5%. The modulator and demodulator MMICs were mounted in WR-8 waveguide modules to evaluate the characteristics of 10-Gbit/s transmission. A bit error rate (BER) for 10-Gbit/s pseudorandom binary sequence (PRBS) 27-1 data was 10−12.

  • 10 gbit s wireless link using inp hemt mmics for generating 120 ghz band millimeter wave signal
    IEEE Transactions on Microwave Theory and Techniques, 2009
    Co-Authors: Akihiko Hirata, Naoya Kukutsu, Toshihiko Kosugi, R Yamaguchi, Hiroshi Takahashi, K Murata, Tadao Nagatsuma, Yuichi Kado, N Iai, S Okabe
    Abstract:

    We have developed a 120-GHz-band wireless link whose maximum transmission data rate is 11.1 Gbit/s. The wireless link uses millimeter-wave Monolithic Integrated Circuits (MMICs) for the generation of a 120-GHz-band millimeter-wave wireless signal. The MMICs were fabricated using 0.1-mum-gate InP-HEMTs and coplanar waveguides. The wireless link can handle four kinds of data rate for OC-192 and 10-Gbit Ethernet standards with and without forward error correction (FEC). We succeeded in the error-free transmission of a 10-Gbit/s signal over a distance of 800 m. The introduction of FEC into the 120-GHz-band wireless link decreased the minimum received power for error-free transmission, and improved the reliability of the link.

Arnulf Leuther - One of the best experts on this subject based on the ideXlab platform.

  • broadband 300 ghz power amplifier mmics in ingaas mhemt technology
    IEEE Transactions on Terahertz Science and Technology, 2020
    Co-Authors: Laurenz John, Arnulf Leuther, Axel Tessmann, Philipp Neininger, Thomas Merkle, Thomas Zwick
    Abstract:

    In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave Monolithic Integrated Circuits (MMICs) covering the 280–330-GHz frequency range. The technology used is a 35-nm gate-length InGaAs metamorphic high-electron-mobility transistor (mHEMT) technology. Two power amplifier MMICs are reported, based on a compact unit amplifier cell, which is parallelized two times using two different Wilkinson power combiners. The Wilkinson combiners are designed using elevated coplanar waveguide and air-bridge thin-film transmission lines in order to implement low-loss 70-Ω lines in the back-end-of-line of this InGaAs mHEMT technology. The five-stage SSPA MMICs achieve a measured small-signal gain around 20 dB over the 280–335-GHz frequency band. State-of-the-art output power performance is reported, achieving at least 13 dBm over the 286–310-GHz frequency band, with a peak output power of 13.7 dBm (23.4 mW) at 300 GHz. The PA MMICs are designed for a reduced chip width while maximizing the total gate width of 512 μm in the output stage, using a compact topology based on cascode and common-source devices, improving the output power per required chip width significantly.

  • a 240 ghz quadrature receiver and transmitter for data transmission up to 40 gbit s
    European Microwave Conference, 2013
    Co-Authors: D Lopezdiaz, Arnulf Leuther, Axel Tessmann, M Schlechtweg, O Ambacher, J Antes, Sandrine Wagner, F Kurz, S Koenig, F Boes
    Abstract:

    Based on active millimeter-wave Monolithic Integrated Circuits (MMICs), a pair of receiver and transmitter modules have been developed and used for wireless data transmission experiments at 240 GHz with data rates of up to 40 Gbit/s. Both modules are driven with a subharmonic local oscillator, located at 120 GHz and feature broadband quadrature I/Q IF terminals. The receiver module has a maximum conversion gain of 3.8 dB at 240 GHz. The I/Q imbalance stays below 1.9 dB in the frequency range from 200 to 280 GHz. The transmitter achieves a maximum output power of -3.6 dBm.

  • a high gain 600 ghz amplifier tmic using 35 nm metamorphic hemt technology
    Compound Semiconductor Integrated Circuit Symposium, 2012
    Co-Authors: Axel Tessmann, Hermann Massler, Arnulf Leuther, M Seelmanneggebert
    Abstract:

    In this paper, we are presenting two terahertz Monolithic Integrated Circuits (TMICs) for use in next-generation radar and spectroscopy systems operating in the WR-1.5 wavelength band (500 - 750 GHz). Both amplifier Circuits have been realized using a 35 nm UnAlAa/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination with a benzocyclobutene (BCB) encapsulation to minimize the device parasitics. Furthermore, airbridge type transmission lines (ABTL) and grounded coplanar circuit topography (GCPW) were applied, leading to a compact chip size and excellent gain performance in the submillimeter-wave frequency regime beyond 500 GHz. A realized six-stage ABTL amplifier circuit demonstrated a small-signal gain of more than 20 dB between 502 and 516 GHz, while a six-stage grounded coplanar TMIC archived a linear gain of 20.3 dB at 610 GHz and more than 18 dB over the bandwidth from 557 to 616 GHz.

  • balanced active frequency multipliers for w band signal sources
    European Microwave Integrated Circuit Conference, 2011
    Co-Authors: Ingmar Kallfass, U J Lewark, M Riessle, Hermann Massler, Axel Tessmann, Manfred Zink, Marija Kuri, Arnulf Leuther
    Abstract:

    The design and performance of millimeter-wave Monolithic Integrated Circuits implementing active balanced frequency multipliers for the W-band (75–110 GHz) is presented. The multipliers by eight and twelve are realized in a 100 nm gatelength metamorphic high electron mobility transistor technology. A novel circuit architecture using a cascade of active balanced frequency doubler and tripler stages in combination with active unbalanced-to-balanced converters is adopted in order to combine very broadband operation with high spectral purity of the output signal. On the module level, the multiplier by twelve achieves an output power of −1.5 dBm and associated conversion gain of 2.5 dB in the frequency range from 78 to 100 GHz, corresponding to a relative bandwidth of 24.7%. Within this frequency range, unwanted harmonics are suppressed by at least 12 dB with respect to the twelfth harmonic. The multiplier by eight achieves an output power of 6.9 dBm, associated conversion gain of 8.9 dB and harmonic suppression of 13 dBc in the frequency range from 84 to 101 GHz.

  • metamorphic hemt technology for submillimeter wave mmic applications
    International Conference on Indium Phosphide and Related Materials, 2010
    Co-Authors: Arnulf Leuther, Hermann Massler, Axel Tessmann, Ingmar Kallfass, R Loesch, M Schlechtweg, M Mikulla, O Ambacher
    Abstract:

    Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length were developed for the fabrication of submillimeter-wave Monolithic Integrated Circuits (S-MMICs) operating at 300 GHz and beyond. Heterostructures with very high electron sheet density of 6.1×1012 cm−2 and 9800 cm2/Vs electron mobility were grown on 4” GaAs substrates using a graded quaternary InAlGaAs buffer layer. For proper device scaling channel-gate distance and source resistance were reduced. Maximum transconductance of 2500 mS/mm and a transit frequency of 515 GHz were achieved for the 35 nm mHEMT with 2 × 10 µm gate-width. Already the 50 nm technology allows the realization of S-MMIC operation frequencies up to 320 GHz, the current limit of on-wafer probe availability. A compact four-stage H-band amplifier circuit based on a grounded coplanar waveguide (GCPW) layout is presented in 50 and 35 nm technology, respectively. The 50 nm mHEMT amplifier has a linear gain of 19.5 dB at 320 GHz and more than 15 dB between 240 and 320 GHz. The same amplifier utilizing 35 nm gate-length transistors achieves more than 20 dB gain within the entire H-band from 220 to 320 GHz.

Toshihiko Kosugi - One of the best experts on this subject based on the ideXlab platform.

  • 120 ghz band 20 gbit s transmitter and receiver mmics using quadrature phase shift keying
    European Microwave Integrated Circuit Conference, 2012
    Co-Authors: Hiroyuki Takahashi, Akihiko Hirata, Jun Takeuchi, Naoya Kukutsu, Toshihiko Kosugi, K Murata
    Abstract:

    This paper describes a 120-GHz-band quadrature phase shift keying (QPSK) transmitter and receiver fabricated on microwave Monolithic Integrated Circuits (MMICs). The MMICs were fabricated using 0.1-µm-gate InP HEMTs and can handle 20-Gbit/s data streams. The transmitter MMIC consists of a QPSK modulator with direct modulation, differential amplifiers for data, a power amplifier, and an output-power monitor circuit. A differentially coherent detector, voltage-controlled phase shifter, and low-noise amplifier are Monolithically Integrated on a receiver MMIC. The QPSK transmitter and receiver MMICs were mounted in WR-8 waveguide modules to evaluate the data transmission performance. The bit error rate (BER) for 22.2-Gbit/s pseudorandom binary sequence (PRBS) 27−1 data is smaller than 10−10 at a receiver power of −35 dBm.

  • 120 ghz band wireless link technologies for outdoor 10 gbit s data transmission
    IEEE Transactions on Microwave Theory and Techniques, 2012
    Co-Authors: Akihiko Hirata, Hiroyuki Takahashi, Jun Takeuchi, Naoya Kukutsu, Toshihiko Kosugi, K Murata, Hiroyoshi Togo, Makoto Yaita, K Aihara, Yasuhiro Sato
    Abstract:

    Our progress in 120-GHz-band wireless link technologies enables us to transmit 10-Gbit/s data transmission over a distance of more than 1 km. The 120-GHz-band wireless link uses high-speed uni-traveling carrier photodiodes (UTC-PD) and InP high-electron mobility transistor (HEMT) millimeter-wave (MMW) Monolithic Integrated Circuits (MMICs) for the generation of MMW signals. We investigate the maximum output power of these devices and compare the phase noise of MMW signals generated by UTC-PDs and InP HEMT MMICs. We describe the antennas we used and their operation technologies. Finally, we investigate the dependence of transmission distance on availability using the statistical rain attenuation data. The calculation results show that the 120-GHz-band wireless link can transmit 10-Gbit/s data over a distance of 1 km with availability of 99.999%.

  • 120 ghz band bpsk modulator and demodulator for 10 gbit s data transmission
    International Microwave Symposium, 2009
    Co-Authors: Hiroyuki Takahashi, Akihiko Hirata, Toshihiko Kosugi, K Murata, Naoya Kukutsu
    Abstract:

    This paper presents a 120-GHz band binary phase shift keying (BPSK) modulator and demodulator fabricated on microwave Monolithic Integrated Circuits (MMICs) for a 10-Gbit/s wireless link. The direct-conversion modulator consists of a 180° hybrid coupler, gain-control amplifiers, and Wilkinson combiner. The delay demodulator has a 100-ps delay line made of coplanar waveguides and a voltage-controlled phase shifter. The modulator MMIC exhibits a static vector error magnitude of 5%. The modulator and demodulator MMICs were mounted in WR-8 waveguide modules to evaluate the characteristics of 10-Gbit/s transmission. A bit error rate (BER) for 10-Gbit/s pseudorandom binary sequence (PRBS) 27-1 data was 10−12.

  • 10 gbit s wireless link using inp hemt mmics for generating 120 ghz band millimeter wave signal
    IEEE Transactions on Microwave Theory and Techniques, 2009
    Co-Authors: Akihiko Hirata, Naoya Kukutsu, Toshihiko Kosugi, R Yamaguchi, Hiroshi Takahashi, K Murata, Tadao Nagatsuma, Yuichi Kado, N Iai, S Okabe
    Abstract:

    We have developed a 120-GHz-band wireless link whose maximum transmission data rate is 11.1 Gbit/s. The wireless link uses millimeter-wave Monolithic Integrated Circuits (MMICs) for the generation of a 120-GHz-band millimeter-wave wireless signal. The MMICs were fabricated using 0.1-mum-gate InP-HEMTs and coplanar waveguides. The wireless link can handle four kinds of data rate for OC-192 and 10-Gbit Ethernet standards with and without forward error correction (FEC). We succeeded in the error-free transmission of a 10-Gbit/s signal over a distance of 800 m. The introduction of FEC into the 120-GHz-band wireless link decreased the minimum received power for error-free transmission, and improved the reliability of the link.