The Experts below are selected from a list of 327 Experts worldwide ranked by ideXlab platform
Seiichi Itabashi - One of the best experts on this subject based on the ideXlab platform.
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Monolithic Integration of germanium photodetectors and silicon wire waveguide devices
OECC 2010 Technical Digest, 2010Co-Authors: Tai Tsuchizawa, Sungbong Park, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Toshifomi Watanabe, Seiichi ItabashiAbstract:We describe our recent progress in Si photonic Integration technology focusing on the Monolithic Integration of a germanium photodetector and a silicon-wire-waveguide variable optical attenuator.
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Monolithic Integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators
Optics express, 2010Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:We demonstrate the Monolithic Integration of germanium (Ge) p-i-n photodetector (PDs) with silicon (Si) variable optical attenuator (VOAs) based on submicrometer Si rib waveguide. A PD is connected to a VOA along the waveguide via a tap coupler. The PDs exhibit low dark current of ~60 nA and large responsivity of ~0.8 A/W at the reverse bias of 1 V at room temperature. These characteristics are uniform over the chip scale. The PDs generate photocurrents precisely with respect to DC optical power attenuated by the VOAs. Two devices work synchronously for modulated optical signals as well. 3-dB cut-off frequency of the VOA is ~100 MHz, while that of the PD is ~1 GHz. The synchronous response speed is limited by the VOA response speed. This is the first demonstration, to the best of our knowledge, of Monolithic Integration of Ge PDs with high-carrier-injection-based optical modulation devices based on Si.
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A Monolithic Integration of Ge photodiodes with Si variable optical attenuators
2009 6th IEEE International Conference on Group IV Photonics, 2009Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. These Ge photodiodes have potential for Monolithic Integration with other Si photonic components.
Sungbong Park - One of the best experts on this subject based on the ideXlab platform.
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Monolithic Integration of germanium photodetectors and silicon wire waveguide devices
OECC 2010 Technical Digest, 2010Co-Authors: Tai Tsuchizawa, Sungbong Park, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Toshifomi Watanabe, Seiichi ItabashiAbstract:We describe our recent progress in Si photonic Integration technology focusing on the Monolithic Integration of a germanium photodetector and a silicon-wire-waveguide variable optical attenuator.
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Monolithic Integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators
Optics express, 2010Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:We demonstrate the Monolithic Integration of germanium (Ge) p-i-n photodetector (PDs) with silicon (Si) variable optical attenuator (VOAs) based on submicrometer Si rib waveguide. A PD is connected to a VOA along the waveguide via a tap coupler. The PDs exhibit low dark current of ~60 nA and large responsivity of ~0.8 A/W at the reverse bias of 1 V at room temperature. These characteristics are uniform over the chip scale. The PDs generate photocurrents precisely with respect to DC optical power attenuated by the VOAs. Two devices work synchronously for modulated optical signals as well. 3-dB cut-off frequency of the VOA is ~100 MHz, while that of the PD is ~1 GHz. The synchronous response speed is limited by the VOA response speed. This is the first demonstration, to the best of our knowledge, of Monolithic Integration of Ge PDs with high-carrier-injection-based optical modulation devices based on Si.
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A Monolithic Integration of Ge photodiodes with Si variable optical attenuators
2009 6th IEEE International Conference on Group IV Photonics, 2009Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. These Ge photodiodes have potential for Monolithic Integration with other Si photonic components.
Yasuhiko Ishikawa - One of the best experts on this subject based on the ideXlab platform.
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Raw data for: 'Towards Monolithic Integration of germanium light sources on silicon chips'
2016Co-Authors: Shinichi Saito, Abdelrahman Al-attili, Katsuya Oda, Yasuhiko IshikawaAbstract:This dataset contains the raw data of the three-dimensional simulations presented in the corresponding review paper: 'Towards Monolithic Integration of germanium light sources on silicon chips'. The simulated value is the volumetric strain, or the summation of the three normal strain components along x, y, and z axes.
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Monolithic Integration of germanium photodetectors and silicon wire waveguide devices
OECC 2010 Technical Digest, 2010Co-Authors: Tai Tsuchizawa, Sungbong Park, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Toshifomi Watanabe, Seiichi ItabashiAbstract:We describe our recent progress in Si photonic Integration technology focusing on the Monolithic Integration of a germanium photodetector and a silicon-wire-waveguide variable optical attenuator.
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Monolithic Integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators
Optics express, 2010Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:We demonstrate the Monolithic Integration of germanium (Ge) p-i-n photodetector (PDs) with silicon (Si) variable optical attenuator (VOAs) based on submicrometer Si rib waveguide. A PD is connected to a VOA along the waveguide via a tap coupler. The PDs exhibit low dark current of ~60 nA and large responsivity of ~0.8 A/W at the reverse bias of 1 V at room temperature. These characteristics are uniform over the chip scale. The PDs generate photocurrents precisely with respect to DC optical power attenuated by the VOAs. Two devices work synchronously for modulated optical signals as well. 3-dB cut-off frequency of the VOA is ~100 MHz, while that of the PD is ~1 GHz. The synchronous response speed is limited by the VOA response speed. This is the first demonstration, to the best of our knowledge, of Monolithic Integration of Ge PDs with high-carrier-injection-based optical modulation devices based on Si.
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A Monolithic Integration of Ge photodiodes with Si variable optical attenuators
2009 6th IEEE International Conference on Group IV Photonics, 2009Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. These Ge photodiodes have potential for Monolithic Integration with other Si photonic components.
Tai Tsuchizawa - One of the best experts on this subject based on the ideXlab platform.
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Monolithic Integration of germanium photodetectors and silicon wire waveguide devices
OECC 2010 Technical Digest, 2010Co-Authors: Tai Tsuchizawa, Sungbong Park, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Toshifomi Watanabe, Seiichi ItabashiAbstract:We describe our recent progress in Si photonic Integration technology focusing on the Monolithic Integration of a germanium photodetector and a silicon-wire-waveguide variable optical attenuator.
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Monolithic Integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators
Optics express, 2010Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:We demonstrate the Monolithic Integration of germanium (Ge) p-i-n photodetector (PDs) with silicon (Si) variable optical attenuator (VOAs) based on submicrometer Si rib waveguide. A PD is connected to a VOA along the waveguide via a tap coupler. The PDs exhibit low dark current of ~60 nA and large responsivity of ~0.8 A/W at the reverse bias of 1 V at room temperature. These characteristics are uniform over the chip scale. The PDs generate photocurrents precisely with respect to DC optical power attenuated by the VOAs. Two devices work synchronously for modulated optical signals as well. 3-dB cut-off frequency of the VOA is ~100 MHz, while that of the PD is ~1 GHz. The synchronous response speed is limited by the VOA response speed. This is the first demonstration, to the best of our knowledge, of Monolithic Integration of Ge PDs with high-carrier-injection-based optical modulation devices based on Si.
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A Monolithic Integration of Ge photodiodes with Si variable optical attenuators
2009 6th IEEE International Conference on Group IV Photonics, 2009Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. These Ge photodiodes have potential for Monolithic Integration with other Si photonic components.
Kazumi Wada - One of the best experts on this subject based on the ideXlab platform.
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Monolithic Integration of germanium photodetectors and silicon wire waveguide devices
OECC 2010 Technical Digest, 2010Co-Authors: Tai Tsuchizawa, Sungbong Park, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Toshifomi Watanabe, Seiichi ItabashiAbstract:We describe our recent progress in Si photonic Integration technology focusing on the Monolithic Integration of a germanium photodetector and a silicon-wire-waveguide variable optical attenuator.
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Monolithic Integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators
Optics express, 2010Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:We demonstrate the Monolithic Integration of germanium (Ge) p-i-n photodetector (PDs) with silicon (Si) variable optical attenuator (VOAs) based on submicrometer Si rib waveguide. A PD is connected to a VOA along the waveguide via a tap coupler. The PDs exhibit low dark current of ~60 nA and large responsivity of ~0.8 A/W at the reverse bias of 1 V at room temperature. These characteristics are uniform over the chip scale. The PDs generate photocurrents precisely with respect to DC optical power attenuated by the VOAs. Two devices work synchronously for modulated optical signals as well. 3-dB cut-off frequency of the VOA is ~100 MHz, while that of the PD is ~1 GHz. The synchronous response speed is limited by the VOA response speed. This is the first demonstration, to the best of our knowledge, of Monolithic Integration of Ge PDs with high-carrier-injection-based optical modulation devices based on Si.
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A Monolithic Integration of Ge photodiodes with Si variable optical attenuators
2009 6th IEEE International Conference on Group IV Photonics, 2009Co-Authors: Sungbong Park, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Koji Yamada, Yasuhiko Ishikawa, Kazumi Wada, Seiichi ItabashiAbstract:Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. These Ge photodiodes have potential for Monolithic Integration with other Si photonic components.