The Experts below are selected from a list of 267 Experts worldwide ranked by ideXlab platform

Roberto Paiella - One of the best experts on this subject based on the ideXlab platform.

  • Monte Carlo Study of gan versus gaas terahertz quantum cascade structures
    Applied Physics Letters, 2008
    Co-Authors: Enrico Bellotti, Kristina Driscoll, Theodore D. Moustakas, Roberto Paiella
    Abstract:

    Due to their large optical phonon energies, nitride semiconductors are promising for the development of terahertz quantum cascade lasers with dramatically improved high-temperature performance relative to existing GaAs devices. Here, we present a rigorous Monte Carlo Study of carrier dynamics in two structures based on the same design scheme for emission at 2THz, consisting of GaN∕AlGaN or GaAs∕AlGaAs quantum wells. The population inversion and hence the gain coefficient of the nitride device are found to exhibit a much weaker (by a factor of over 3) temperature dependence and to remain large enough for laser action even without cryogenic cooling.

  • Monte Carlo Study of the temperature dependent performance of GaN versus GaAs terahertz quantum cascade structures
    LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2008
    Co-Authors: Enrico Bellotti, Kristina Driscoll, Theodore D. Moustakas, Roberto Paiella
    Abstract:

    We present a Monte Carlo Study of the carrier dynamics in terahertz quantum cascade lasers to quantify the potential of GaN/AlGaN over GaAs/AlGaAs quantum wells for high temperature operation.

Enrico Bellotti - One of the best experts on this subject based on the ideXlab platform.

  • Monte Carlo Study of gan versus gaas terahertz quantum cascade structures
    Applied Physics Letters, 2008
    Co-Authors: Enrico Bellotti, Kristina Driscoll, Theodore D. Moustakas, Roberto Paiella
    Abstract:

    Due to their large optical phonon energies, nitride semiconductors are promising for the development of terahertz quantum cascade lasers with dramatically improved high-temperature performance relative to existing GaAs devices. Here, we present a rigorous Monte Carlo Study of carrier dynamics in two structures based on the same design scheme for emission at 2THz, consisting of GaN∕AlGaN or GaAs∕AlGaAs quantum wells. The population inversion and hence the gain coefficient of the nitride device are found to exhibit a much weaker (by a factor of over 3) temperature dependence and to remain large enough for laser action even without cryogenic cooling.

  • Monte Carlo Study of the temperature dependent performance of GaN versus GaAs terahertz quantum cascade structures
    LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2008
    Co-Authors: Enrico Bellotti, Kristina Driscoll, Theodore D. Moustakas, Roberto Paiella
    Abstract:

    We present a Monte Carlo Study of the carrier dynamics in terahertz quantum cascade lasers to quantify the potential of GaN/AlGaN over GaAs/AlGaAs quantum wells for high temperature operation.

Kristina Driscoll - One of the best experts on this subject based on the ideXlab platform.

  • Monte Carlo Study of gan versus gaas terahertz quantum cascade structures
    Applied Physics Letters, 2008
    Co-Authors: Enrico Bellotti, Kristina Driscoll, Theodore D. Moustakas, Roberto Paiella
    Abstract:

    Due to their large optical phonon energies, nitride semiconductors are promising for the development of terahertz quantum cascade lasers with dramatically improved high-temperature performance relative to existing GaAs devices. Here, we present a rigorous Monte Carlo Study of carrier dynamics in two structures based on the same design scheme for emission at 2THz, consisting of GaN∕AlGaN or GaAs∕AlGaAs quantum wells. The population inversion and hence the gain coefficient of the nitride device are found to exhibit a much weaker (by a factor of over 3) temperature dependence and to remain large enough for laser action even without cryogenic cooling.

  • Monte Carlo Study of the temperature dependent performance of GaN versus GaAs terahertz quantum cascade structures
    LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2008
    Co-Authors: Enrico Bellotti, Kristina Driscoll, Theodore D. Moustakas, Roberto Paiella
    Abstract:

    We present a Monte Carlo Study of the carrier dynamics in terahertz quantum cascade lasers to quantify the potential of GaN/AlGaN over GaAs/AlGaAs quantum wells for high temperature operation.

Theodore D. Moustakas - One of the best experts on this subject based on the ideXlab platform.

  • Monte Carlo Study of gan versus gaas terahertz quantum cascade structures
    Applied Physics Letters, 2008
    Co-Authors: Enrico Bellotti, Kristina Driscoll, Theodore D. Moustakas, Roberto Paiella
    Abstract:

    Due to their large optical phonon energies, nitride semiconductors are promising for the development of terahertz quantum cascade lasers with dramatically improved high-temperature performance relative to existing GaAs devices. Here, we present a rigorous Monte Carlo Study of carrier dynamics in two structures based on the same design scheme for emission at 2THz, consisting of GaN∕AlGaN or GaAs∕AlGaAs quantum wells. The population inversion and hence the gain coefficient of the nitride device are found to exhibit a much weaker (by a factor of over 3) temperature dependence and to remain large enough for laser action even without cryogenic cooling.

  • Monte Carlo Study of the temperature dependent performance of GaN versus GaAs terahertz quantum cascade structures
    LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2008
    Co-Authors: Enrico Bellotti, Kristina Driscoll, Theodore D. Moustakas, Roberto Paiella
    Abstract:

    We present a Monte Carlo Study of the carrier dynamics in terahertz quantum cascade lasers to quantify the potential of GaN/AlGaN over GaAs/AlGaAs quantum wells for high temperature operation.

Richard J. Needs - One of the best experts on this subject based on the ideXlab platform.