The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Masanori Furuta - One of the best experts on this subject based on the ideXlab platform.
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A wide dynamic range CMOS image sensor with Multiple Exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters
IEEE Journal of Solid-State Circuits, 2005Co-Authors: Mitsuhito Mase, Masaaki Sasaki, Yasuo Wakamori, Shoji Kawahito, Masanori FurutaAbstract:A wide dynamic range CMOS image sensor with a burst readout Multiple Exposure method is proposed. In this method, maximally four different Exposure-time signals are read out in one frame. To achieve the high-speed readout, a compact cyclic analog-to-digital converter (ADC) with noise canceling function is proposed and arrays of the cyclic ADCs are integrated at the column. A prototype wide dynamic range CMOS image sensor has been developed with 0.25-μm 1-poly 4-metal CMOS image sensor technology. The dynamic range is expanded maximally by a factor of 1791 compared to the case of single Exposure. The dynamic range is measured to be 19.8 bit or 119 dB. The 12-bit ADC integrated at the column of the CMOS image sensor has DNL of +0.2/-0.8 LSB.
Mitsuhito Mase - One of the best experts on this subject based on the ideXlab platform.
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a 142db dynamic range cmos image sensor with Multiple Exposure time signals
Asian Solid-State Circuits Conference, 2005Co-Authors: Jongho Park, Masaaki Sasaki, Yasuo Wakamori, Mitsuhito Mase, Shoji Kawahito, Yukihiro OhtaAbstract:An ultra wide dynamic range image sensor with a linear response is presented. The proposed extremely short accumulation (ESA) signal readout technique enables the dynamic range of image sensor to be expanded up to 142dB. Including the ESA signals, total of 4 different accumulation time signals are read out in one frame based on burst readout mode. To achieve the high-speed readout required for the Multiple Exposure signals, column parallel A/D converters are integrated at the upper and lower sides of pixel array. The improved column parallel cyclic 12-b ADC with a built-in CDS circuit has the differential non-linearity of plusmn0.3LSB
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A wide dynamic range CMOS image sensor with Multiple Exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters
IEEE Journal of Solid-State Circuits, 2005Co-Authors: Mitsuhito Mase, Masaaki Sasaki, Yasuo Wakamori, Shoji Kawahito, Masanori FurutaAbstract:A wide dynamic range CMOS image sensor with a burst readout Multiple Exposure method is proposed. In this method, maximally four different Exposure-time signals are read out in one frame. To achieve the high-speed readout, a compact cyclic analog-to-digital converter (ADC) with noise canceling function is proposed and arrays of the cyclic ADCs are integrated at the column. A prototype wide dynamic range CMOS image sensor has been developed with 0.25-μm 1-poly 4-metal CMOS image sensor technology. The dynamic range is expanded maximally by a factor of 1791 compared to the case of single Exposure. The dynamic range is measured to be 19.8 bit or 119 dB. The 12-bit ADC integrated at the column of the CMOS image sensor has DNL of +0.2/-0.8 LSB.
Yasuo Wakamori - One of the best experts on this subject based on the ideXlab platform.
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a 142db dynamic range cmos image sensor with Multiple Exposure time signals
Asian Solid-State Circuits Conference, 2005Co-Authors: Jongho Park, Masaaki Sasaki, Yasuo Wakamori, Mitsuhito Mase, Shoji Kawahito, Yukihiro OhtaAbstract:An ultra wide dynamic range image sensor with a linear response is presented. The proposed extremely short accumulation (ESA) signal readout technique enables the dynamic range of image sensor to be expanded up to 142dB. Including the ESA signals, total of 4 different accumulation time signals are read out in one frame based on burst readout mode. To achieve the high-speed readout required for the Multiple Exposure signals, column parallel A/D converters are integrated at the upper and lower sides of pixel array. The improved column parallel cyclic 12-b ADC with a built-in CDS circuit has the differential non-linearity of plusmn0.3LSB
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A wide dynamic range CMOS image sensor with Multiple Exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters
IEEE Journal of Solid-State Circuits, 2005Co-Authors: Mitsuhito Mase, Masaaki Sasaki, Yasuo Wakamori, Shoji Kawahito, Masanori FurutaAbstract:A wide dynamic range CMOS image sensor with a burst readout Multiple Exposure method is proposed. In this method, maximally four different Exposure-time signals are read out in one frame. To achieve the high-speed readout, a compact cyclic analog-to-digital converter (ADC) with noise canceling function is proposed and arrays of the cyclic ADCs are integrated at the column. A prototype wide dynamic range CMOS image sensor has been developed with 0.25-μm 1-poly 4-metal CMOS image sensor technology. The dynamic range is expanded maximally by a factor of 1791 compared to the case of single Exposure. The dynamic range is measured to be 19.8 bit or 119 dB. The 12-bit ADC integrated at the column of the CMOS image sensor has DNL of +0.2/-0.8 LSB.
Shoji Kawahito - One of the best experts on this subject based on the ideXlab platform.
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a 142db dynamic range cmos image sensor with Multiple Exposure time signals
Asian Solid-State Circuits Conference, 2005Co-Authors: Jongho Park, Masaaki Sasaki, Yasuo Wakamori, Mitsuhito Mase, Shoji Kawahito, Yukihiro OhtaAbstract:An ultra wide dynamic range image sensor with a linear response is presented. The proposed extremely short accumulation (ESA) signal readout technique enables the dynamic range of image sensor to be expanded up to 142dB. Including the ESA signals, total of 4 different accumulation time signals are read out in one frame based on burst readout mode. To achieve the high-speed readout required for the Multiple Exposure signals, column parallel A/D converters are integrated at the upper and lower sides of pixel array. The improved column parallel cyclic 12-b ADC with a built-in CDS circuit has the differential non-linearity of plusmn0.3LSB
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A wide dynamic range CMOS image sensor with Multiple Exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters
IEEE Journal of Solid-State Circuits, 2005Co-Authors: Mitsuhito Mase, Masaaki Sasaki, Yasuo Wakamori, Shoji Kawahito, Masanori FurutaAbstract:A wide dynamic range CMOS image sensor with a burst readout Multiple Exposure method is proposed. In this method, maximally four different Exposure-time signals are read out in one frame. To achieve the high-speed readout, a compact cyclic analog-to-digital converter (ADC) with noise canceling function is proposed and arrays of the cyclic ADCs are integrated at the column. A prototype wide dynamic range CMOS image sensor has been developed with 0.25-μm 1-poly 4-metal CMOS image sensor technology. The dynamic range is expanded maximally by a factor of 1791 compared to the case of single Exposure. The dynamic range is measured to be 19.8 bit or 119 dB. The 12-bit ADC integrated at the column of the CMOS image sensor has DNL of +0.2/-0.8 LSB.
Masaaki Sasaki - One of the best experts on this subject based on the ideXlab platform.
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a 142db dynamic range cmos image sensor with Multiple Exposure time signals
Asian Solid-State Circuits Conference, 2005Co-Authors: Jongho Park, Masaaki Sasaki, Yasuo Wakamori, Mitsuhito Mase, Shoji Kawahito, Yukihiro OhtaAbstract:An ultra wide dynamic range image sensor with a linear response is presented. The proposed extremely short accumulation (ESA) signal readout technique enables the dynamic range of image sensor to be expanded up to 142dB. Including the ESA signals, total of 4 different accumulation time signals are read out in one frame based on burst readout mode. To achieve the high-speed readout required for the Multiple Exposure signals, column parallel A/D converters are integrated at the upper and lower sides of pixel array. The improved column parallel cyclic 12-b ADC with a built-in CDS circuit has the differential non-linearity of plusmn0.3LSB
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A wide dynamic range CMOS image sensor with Multiple Exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters
IEEE Journal of Solid-State Circuits, 2005Co-Authors: Mitsuhito Mase, Masaaki Sasaki, Yasuo Wakamori, Shoji Kawahito, Masanori FurutaAbstract:A wide dynamic range CMOS image sensor with a burst readout Multiple Exposure method is proposed. In this method, maximally four different Exposure-time signals are read out in one frame. To achieve the high-speed readout, a compact cyclic analog-to-digital converter (ADC) with noise canceling function is proposed and arrays of the cyclic ADCs are integrated at the column. A prototype wide dynamic range CMOS image sensor has been developed with 0.25-μm 1-poly 4-metal CMOS image sensor technology. The dynamic range is expanded maximally by a factor of 1791 compared to the case of single Exposure. The dynamic range is measured to be 19.8 bit or 119 dB. The 12-bit ADC integrated at the column of the CMOS image sensor has DNL of +0.2/-0.8 LSB.