The Experts below are selected from a list of 54 Experts worldwide ranked by ideXlab platform
D. Misra - One of the best experts on this subject based on the ideXlab platform.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey B. Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage ( ${V} _{\text {T}}$ ) of an adjacent FET, the forward bias ( ${V} _{\text {D}}$ ) of an adjacent pn-junction or the gate resistance ( ${R} _{\text {G}}$ ) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
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Self-heating measurement methodologies and their assessment on bulk FinFET Devices
2017 IEEE International Integrated Reliability Workshop (IIRW), 2017Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, A. Gondal, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
P. Paliwoda - One of the best experts on this subject based on the ideXlab platform.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey B. Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage ( ${V} _{\text {T}}$ ) of an adjacent FET, the forward bias ( ${V} _{\text {D}}$ ) of an adjacent pn-junction or the gate resistance ( ${R} _{\text {G}}$ ) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
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Self-heating measurement methodologies and their assessment on bulk FinFET Devices
2017 IEEE International Integrated Reliability Workshop (IIRW), 2017Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, A. Gondal, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
A. Kerber - One of the best experts on this subject based on the ideXlab platform.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey B. Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage ( ${V} _{\text {T}}$ ) of an adjacent FET, the forward bias ( ${V} _{\text {D}}$ ) of an adjacent pn-junction or the gate resistance ( ${R} _{\text {G}}$ ) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
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Self-heating measurement methodologies and their assessment on bulk FinFET Devices
2017 IEEE International Integrated Reliability Workshop (IIRW), 2017Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, A. Gondal, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
Z. Chbili - One of the best experts on this subject based on the ideXlab platform.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey B. Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage ( ${V} _{\text {T}}$ ) of an adjacent FET, the forward bias ( ${V} _{\text {D}}$ ) of an adjacent pn-junction or the gate resistance ( ${R} _{\text {G}}$ ) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
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Self-heating measurement methodologies and their assessment on bulk FinFET Devices
2017 IEEE International Integrated Reliability Workshop (IIRW), 2017Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, A. Gondal, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
Dhruv Singh - One of the best experts on this subject based on the ideXlab platform.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey B. Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage ( ${V} _{\text {T}}$ ) of an adjacent FET, the forward bias ( ${V} _{\text {D}}$ ) of an adjacent pn-junction or the gate resistance ( ${R} _{\text {G}}$ ) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
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Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation
IEEE Transactions on Device and Materials Reliability, 2018Co-Authors: P. Paliwoda, Z. Chbili, A. Kerber, Prashanth P. Manik, Dhruv Singh, Jeffrey Johnson, D. MisraAbstract:This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. Finite element simulations of heat transport are used to interpret heater-sensor temperature gradients and validate the measurements. The different sensor types were designed to use the threshold voltage (VT) of an adjacent FET, the forward bias (VD) of an adjacent pn-junction or the gate resistance (RG) of the Device itself. We report that self-heating is underestimated by 35% when sensed at a Neighboring Device. We also confirm that heat from local and surrounding sources are additive.
