The Experts below are selected from a list of 12744 Experts worldwide ranked by ideXlab platform
Yan Zhang - One of the best experts on this subject based on the ideXlab platform.
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piezotronic effect on the luminescence of quantum dots for micro nano Newton Force measurement
Nano Research, 2018Co-Authors: Yan Zhang, Jiaheng NieAbstract:The luminescence of semiconductor quantum dots (QDs) can be adjusted using the piezotronic effect. An external mechanical Force applied on the QD generates a piezoelectric potential, which alters the luminescence of the QD. A small mechanical Force may induce a significant change on the emission spectrum. In the case of InN QDs, it is demonstrated that the unForced emission wavelength is more than doubled by a Force of 1 μN. The strategy of using the piezotronic effect to tune the color of the emission leads to promising noncontact Forcemeasurement applications in biological and medical sensors and Force-sensitive displays. Several piezoelectric semiconductor materials have been investigated in terms of the tunability of the emission wavelength in the presence of an external applied Force. It is found that CdS and CdSe demonstrate much higher tunability δλ/δF, which makes them suitable for micro/nano-Newton Force measurement applications.
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erratum to piezotronic effect on the luminescence of quantum dots for micro nano Newton Force measurement
Nano Research, 2018Co-Authors: Yan Zhang, Jiaheng NieAbstract:The affiliations of the authors in the original version of this article were unfortunately incorrect on the first page and the first page of the ESM. Instead of Yan Zhang1,2, Jiaheng Nie1, and Lijie Li3 (✉) 1 School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China 2 Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing 100083, China 3 Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA1 8EN, UK It should read Yan Zhang1,2,3, Jiaheng Nie1, and Lijie Li4 (✉) 1 School of Physics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China 2 Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China 3 College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China 4 Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA1 8EN, UK
Jiaheng Nie - One of the best experts on this subject based on the ideXlab platform.
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piezotronic effect on the luminescence of quantum dots for micro nano Newton Force measurement
Nano Research, 2018Co-Authors: Yan Zhang, Jiaheng NieAbstract:The luminescence of semiconductor quantum dots (QDs) can be adjusted using the piezotronic effect. An external mechanical Force applied on the QD generates a piezoelectric potential, which alters the luminescence of the QD. A small mechanical Force may induce a significant change on the emission spectrum. In the case of InN QDs, it is demonstrated that the unForced emission wavelength is more than doubled by a Force of 1 μN. The strategy of using the piezotronic effect to tune the color of the emission leads to promising noncontact Forcemeasurement applications in biological and medical sensors and Force-sensitive displays. Several piezoelectric semiconductor materials have been investigated in terms of the tunability of the emission wavelength in the presence of an external applied Force. It is found that CdS and CdSe demonstrate much higher tunability δλ/δF, which makes them suitable for micro/nano-Newton Force measurement applications.
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erratum to piezotronic effect on the luminescence of quantum dots for micro nano Newton Force measurement
Nano Research, 2018Co-Authors: Yan Zhang, Jiaheng NieAbstract:The affiliations of the authors in the original version of this article were unfortunately incorrect on the first page and the first page of the ESM. Instead of Yan Zhang1,2, Jiaheng Nie1, and Lijie Li3 (✉) 1 School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China 2 Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing 100083, China 3 Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA1 8EN, UK It should read Yan Zhang1,2,3, Jiaheng Nie1, and Lijie Li4 (✉) 1 School of Physics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China 2 Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China 3 College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China 4 Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA1 8EN, UK
Mohd Haris - One of the best experts on this subject based on the ideXlab platform.
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a cmos mems nano Newton Force sensor for biomedical applications
Nano Micro Engineered and Molecular Systems, 2010Co-Authors: Mohd HarisAbstract:This paper reports the design and microfabrication of a CMOS-MEMS capacitive Force sensor capable of nano-Newton out-of-plane Force measurement. Sidewall and fringe capacitance formed by the multiple CMOS metal layers were utilized and fully differential sensing was enabled by common-centroid wiring of the sensing capacitors. Single-crystal silicon (SCS) is incorporated in the entire sensing element for robust structures and reliable sensor deployment in Force measurement. A sensitivity of 0.02 fF/nN in a measurable Force range 2 pN to 1 mN is predicted. The minimum detection Force is 2.8 pN. The CMOS-MEMS Force sensor features easy post-CMOS microfabrication in which directional SiO 2 reactive ion etching (RIE) and silicon deep reactive ion etching (DRIE) are employed.
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design and microfabrication of a cmos mems piezoresistive accelerometer and a nano Newton Force sensor
2010Co-Authors: Mohd HarisAbstract:This thesis work consists of three aspects of research efforts: I. Design, fabrication, and characterization of a CMOS-MEMS piezoresistive accelerometer 2. Design, fabrication, and characterization of a CMOS-MEMS nano-Newton Force sensor 3. Observer-based controller design of a nano-Newton Force sensor actuator system A low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass has been fabricated. Inherent CMOS polysilicon thin film was utilized as piezoresistive material and full Wheatstone bridge was constructed through easy wiring allowed by three metal layers in CMOS thin films. The device fabrication process consists of a standard CMOS process for sensor configuration and a deep reactive ion etching (DRIE) based post-CMOS microfabrication for MEMS structure release. Bulk single-crystal silicon (SCS) substrate was included in the proof mass to increase sensor sensitivity. Using a low operating power of 1.67 mW, the sensitivity was measured as 30.7 mV/g after amplification and 0.077 mV/g prior to amplification. With a total noise floor of 1.03 mg/JHz, the minimum detectable acceleration is found to be 32.0 mg for a bandwidth of 1 kHz which is sufficient for many applications. The second device investigated in this thesis work is a CMOS-MEMS capacitive Force sensor capable of nano-Newton out-of-plane Force measurement. Sidewall and fringe capacitance formed by the multiple CMOS metal layers were utilized and fully differential sensing was enabled by common-centroid wiring of the sensing capacitors. Single-crystal silicon (SCS) is incorporated in the entire sensing element for robust structures and reliable sensor deployment in Force measurement. A sensitivity of 8 mV/g prior to amplification was observed. With a total noise floor of 0.63 mgNHz, the minimum detection acceleration is found to be 19.8 mg, which is equivalent to a sensing Force of 449 nN. This work also addresses the design and simulation of an observer-based nonlinear controller employed in a CMOS-MEMS nano-Newton Force sensor actuator system. Measurement errors occur when there are in-plane movements of the probe tip; these errors can be controlled by the actuators incorporated within the sensor. Observerbased controller is necessitated in real-world control applications where not all the state variables are accessible for on-line measurements
Toshiyuki Tsuchiya - One of the best experts on this subject based on the ideXlab platform.
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Mechanical calibration of MEMS springs with sub-micro-Newton Force resolution
Sensors and Actuators A: Physical, 2008Co-Authors: Kenji Miyamoto, Tomoya Jomori, Koji Sugano, Osamu Tabata, Toshiyuki TsuchiyaAbstract:Direct stiffness calibration of microelectromechanical-system (MEMS) springs made of single-crystal silicon was performed using a previously developed mechanical Force measurement tool. The spring devices used for calibration were fabricated from silicon-on-insulator wafers and contained one or four folded-beam springs. The spring constants were directly measured using an electromagnetic Force-feedback balance with a Force resolution of about 0.2 μN. The average measured spring constant of a folded-beam spring with a designed constant of 0.7 N/m was 0.58 N/m. This successful calibration shows that this tool can be used to calibrate various kinds of MEMS flexible structures.
James Ranshaw - One of the best experts on this subject based on the ideXlab platform.
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Femto-Newton Force sensitivity quartz tuning fork sensor
Sensors and Actuators A-physical, 2007Co-Authors: Mladen Barbic, Lowell Eliason, James RanshawAbstract:We describe a quartz tuning fork resonator that is smaller in size than previously reported sensors of the same shape. Smaller dimensions result in the reduced spring constant of the tuning fork resonator with important potential performance improvements in scanning probe microscopes and Force sensing instruments. The spring constant of 480 N/m and mechanical quality factor Q of 27,500 are nearly optimal values needed for frequency modulated atomic Force microscopy. The tuning fork resonator Force noise floor of 6.5 fN/√Hz provides better Force sensitivity than previously reported larger size quartz tuning forks.