The Experts below are selected from a list of 126 Experts worldwide ranked by ideXlab platform
Olivier Durand - One of the best experts on this subject based on the ideXlab platform.
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Monolithic integration of GaAsPN dilute-Nitride compounds on silicon substrates: toward the III-V/Si tandem solar cell
2015Co-Authors: Olivier Durand, Alain Rolland, Samy Almosni, Charles Cornet, Jacky Even, Antoine Létoublon, Yanping Wang, Christophe Levallois, Nicolas Bertru, Alain Le CorreAbstract:GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted Nitride Alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN Alloy and our recent studies of all the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate) 100 nm-thick GaAsPN Alloy has been grown by MBE. After a post-growth annealing step, this Alloy displays a strong absorption around 1.8-1.9 eV eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. An early stage GaAsPN PIN solar cell prototype have been grown on a GaP (001) substrate. The quantum efficiency and the I-V curve show that carriers have been extracted from the GaAsPN Alloy absorber, with an open-circuit voltage around 1 eV, while however displaying a low short circuit current meaning that the GaAsPN structural properties needs an optimization. Considering all the pathways for improvement, the >2% efficiency obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual junction solar cell on silicon substrate. This work was supported by the French ANR, project MENHIRS (grant N°ANR-2011-PRGE-007-0).
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GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell
2015Co-Authors: Mickael Da Silva, Samy Almosni, Charles Cornet, Jean-françois Guillemoles, Antoine Létoublon, Christophe Levallois, Pierre Râle, Laurent Lombez, Olivier DurandAbstract:GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted Nitride Alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN Alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1µm-thick GaAsPN Alloy has been grown by MBE. After a post-growth annealing step, this Alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1µm and 0.3µm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN Alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.
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Theoretical study of optical properties of anti phase domains in GaP
Journal of Applied Physics, 2014Co-Authors: Julien Vidal, Laurent Pedesseau, Charles Cornet, Jean-marc Jancu, Jacky Even, Sana Laribi, Jean-françois Guillemoles, Olivier DurandAbstract:III-V/Si heterostructures are currently investigated for silicon photonics and solar energy conversion. In particular, dilute Nitride Alloy GaAsPN grown on a GaP/Si platform exhibits lattice match with Si and an optimal band gap configuration for tandem solar cell devices. However, monolithic “coherent” growth of the GaP thin layer on Si suffers from the nucleation of extended structural defects, which can hamper device operation as well as the GaP/Si interface level and through their propagation inside the overall heterostructure. However, the effect of such structural defects on optical and transport properties is actually not well understood in details. In this letter, we investigate the anti phase domains defect (also called inversion domains) by means of ab initio calculations giving insights into the alteration of optical and transport properties of GaP due to the defective GaP/Si interface.
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Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics
Energy Harvesting and Systems, 2014Co-Authors: Olivier Durand, Alain Rolland, Laurent Pedesseau, Samy Almosni, Cedric Robert, Charles Cornet, Yanping Wang, Christophe Levallois, A. Létoublon, Jacky EvenAbstract:GaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-Nitride Alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtain defect-free GaP/Si pseudo-substrates suitable for the subsequent GaAsPN top junctions growth. Result shows that a double-step growth procedure suppresses most of the microtwins and a bi-stepped Si buffer can be grown, suitable to reduce the anti-phase domains density. We also review our recent progress in materials development of the GaAsPN Alloy and our recent studies of all the different building blocks toward the development of a PIN solar cell. GaAsPN Alloy with energy bandgap around 1.8 eV, lattice matched with the Si substrate, has been achieved. This Alloy displays efficient photoluminescence at room temperature and good light absorption. An early-stage GaAsPN PIN solar cell prototype has been grown on a GaP(001) substrate. The external quantum efficiency and the I–V curve show that carriers have been extracted from the GaAsPN Alloy absorber, with an open-circuit voltage above 1 eV, however a low short-circuit current density obtained suggests that GaAsPN structural properties need further optimization. Considering all the pathways for improvement, the 2.25% efficiency and IQE around 35% obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual-junction solar cell on silicon substrate.
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Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon
2009Co-Authors: Weiming Guo, Charles Cornet, Antoine Létoublon, Tony Rohel, Nicolas Chevalier, Olivier Dehaese, Alexandre Bondi, Soline Richard, Alain Le Corre, Olivier DurandAbstract:Si is the well-known ruling material of semiconductor microelectronic industry. The rapid trend of dimension reduction and increasing density of metal interconnects has induced a large interest for optoelectronic materials (especially III-V semiconductors) integration onto Si, useful to replace electrical interconnects by optical ones. First, we present a theoretical approach using ab initio calculations which give crucial information on III-V-Si band lineups (InAs/Si, InAs/GaP, GaP/Si) that are non trivials in such systems. Growth of different light emitters (bulk GaPN diluted-Nitride Alloy, GaAsP quantum wells, InAs and InP quantum dots) on GaP (001) substrates is also presented. Photoluminescence measurements are compared to previous abinitio calculations. We then present the achievement of coherent crystalline growth of 90 nm good quality GaP onto 4°-off Si(001). Epilayers are characterised using both X-Ray scattering and Atomic Force Microscopy. Special emphasis is done on the comprehension of anti-phase domains (APD) formation, which are very particular defects originating from the growth of the zincblende III-V polar material onto a non-polar Si substrate, the “polarity” term describing the sublattice allocations of the III/V material. An APD detection method is given using scattering measurements around the (002) reflection and the interpretation is supported by X-ray scattering simulations. Finally, a basic structure for light emitting diode on Silicon is proposed.
G. Hill - One of the best experts on this subject based on the ideXlab platform.
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Electron effective mass and Si-donor binding energy in Ga As 1 − x N x probed by a high magnetic field
Physical Review B, 2008Co-Authors: G. Allison, Amalia Patanè, S. Spasov, Laurence Eaves, N. V. Kozlova, J. Freudenberger, Mark Hopkinson, G. HillAbstract:We study the magnetoresistance of the dilute Nitride Alloy $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ in magnetic fields up to $47\phantom{\rule{0.3em}{0ex}}\mathrm{T}$. We observe a strong magnetophonon resonance effect and a large transverse magnetoresistance, which provide the means of measuring the N-induced enhancement of the electron effective mass and of investigating the magnetic freeze-out of conduction electrons on Si donors in $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$.
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electron effective mass and si donor binding energy in ga as 1 x n x probed by a high magnetic field
Physical Review B, 2008Co-Authors: G. Allison, Amalia Patanè, S. Spasov, Laurence Eaves, N. V. Kozlova, J. Freudenberger, Mark Hopkinson, G. HillAbstract:We study the magnetoresistance of the dilute Nitride Alloy $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ in magnetic fields up to $47\phantom{\rule{0.3em}{0ex}}\mathrm{T}$. We observe a strong magnetophonon resonance effect and a large transverse magnetoresistance, which provide the means of measuring the N-induced enhancement of the electron effective mass and of investigating the magnetic freeze-out of conduction electrons on Si donors in $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$.
Charles Cornet - One of the best experts on this subject based on the ideXlab platform.
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Monolithic integration of GaAsPN dilute-Nitride compounds on silicon substrates: toward the III-V/Si tandem solar cell
2015Co-Authors: Olivier Durand, Alain Rolland, Samy Almosni, Charles Cornet, Jacky Even, Antoine Létoublon, Yanping Wang, Christophe Levallois, Nicolas Bertru, Alain Le CorreAbstract:GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted Nitride Alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN Alloy and our recent studies of all the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate) 100 nm-thick GaAsPN Alloy has been grown by MBE. After a post-growth annealing step, this Alloy displays a strong absorption around 1.8-1.9 eV eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. An early stage GaAsPN PIN solar cell prototype have been grown on a GaP (001) substrate. The quantum efficiency and the I-V curve show that carriers have been extracted from the GaAsPN Alloy absorber, with an open-circuit voltage around 1 eV, while however displaying a low short circuit current meaning that the GaAsPN structural properties needs an optimization. Considering all the pathways for improvement, the >2% efficiency obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual junction solar cell on silicon substrate. This work was supported by the French ANR, project MENHIRS (grant N°ANR-2011-PRGE-007-0).
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GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell
2015Co-Authors: Mickael Da Silva, Samy Almosni, Charles Cornet, Jean-françois Guillemoles, Antoine Létoublon, Christophe Levallois, Pierre Râle, Laurent Lombez, Olivier DurandAbstract:GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted Nitride Alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN Alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1µm-thick GaAsPN Alloy has been grown by MBE. After a post-growth annealing step, this Alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1µm and 0.3µm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN Alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.
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design of a lattice matched iii v n si photovoltaic tandem cell monolithically integrated on silicon substrate
Optical and Quantum Electronics, 2014Co-Authors: Alain Rolland, Laurent Pedesseau, Samy Almosni, Cedric Robert, Charles Cornet, Jean-marc Jancu, Jamal Benhlal, O Durand, Jacky Even, Alain Le CorreAbstract:In this paper, we present a comprehensive study of high efficiencies tandem solar cells monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAs(N) quantum dots and GaAsPN quantum wells have been grown recently on GaP/Si susbstrate for applications related to light emission. For photovoltaic applications, we consider the GaAsPN diluted Nitride Alloy as the top junction material due to both its perfect lattice matching with Si and ideal bandgap energy for current generation in association with the Si bottom cell. Numerical simulation of the top cell is performed. The effect of layer thicknesses and doping on the cell efficiency are evidenced. In these structures a tunnel junction (TJ) is needed to interconnect both the top and bottom sub-cells. We compare the simulated performances of different TJ structures and show that the GaP(n+)/Si(p+) TJ is promising to improve performances of the current-voltage characteristic.
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Theoretical study of optical properties of anti phase domains in GaP
Journal of Applied Physics, 2014Co-Authors: Julien Vidal, Laurent Pedesseau, Charles Cornet, Jean-marc Jancu, Jacky Even, Sana Laribi, Jean-françois Guillemoles, Olivier DurandAbstract:III-V/Si heterostructures are currently investigated for silicon photonics and solar energy conversion. In particular, dilute Nitride Alloy GaAsPN grown on a GaP/Si platform exhibits lattice match with Si and an optimal band gap configuration for tandem solar cell devices. However, monolithic “coherent” growth of the GaP thin layer on Si suffers from the nucleation of extended structural defects, which can hamper device operation as well as the GaP/Si interface level and through their propagation inside the overall heterostructure. However, the effect of such structural defects on optical and transport properties is actually not well understood in details. In this letter, we investigate the anti phase domains defect (also called inversion domains) by means of ab initio calculations giving insights into the alteration of optical and transport properties of GaP due to the defective GaP/Si interface.
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Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics
Energy Harvesting and Systems, 2014Co-Authors: Olivier Durand, Alain Rolland, Laurent Pedesseau, Samy Almosni, Cedric Robert, Charles Cornet, Yanping Wang, Christophe Levallois, A. Létoublon, Jacky EvenAbstract:GaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-Nitride Alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtain defect-free GaP/Si pseudo-substrates suitable for the subsequent GaAsPN top junctions growth. Result shows that a double-step growth procedure suppresses most of the microtwins and a bi-stepped Si buffer can be grown, suitable to reduce the anti-phase domains density. We also review our recent progress in materials development of the GaAsPN Alloy and our recent studies of all the different building blocks toward the development of a PIN solar cell. GaAsPN Alloy with energy bandgap around 1.8 eV, lattice matched with the Si substrate, has been achieved. This Alloy displays efficient photoluminescence at room temperature and good light absorption. An early-stage GaAsPN PIN solar cell prototype has been grown on a GaP(001) substrate. The external quantum efficiency and the I–V curve show that carriers have been extracted from the GaAsPN Alloy absorber, with an open-circuit voltage above 1 eV, however a low short-circuit current density obtained suggests that GaAsPN structural properties need further optimization. Considering all the pathways for improvement, the 2.25% efficiency and IQE around 35% obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual-junction solar cell on silicon substrate.
G. Allison - One of the best experts on this subject based on the ideXlab platform.
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Electron effective mass and Si-donor binding energy in Ga As 1 − x N x probed by a high magnetic field
Physical Review B, 2008Co-Authors: G. Allison, Amalia Patanè, S. Spasov, Laurence Eaves, N. V. Kozlova, J. Freudenberger, Mark Hopkinson, G. HillAbstract:We study the magnetoresistance of the dilute Nitride Alloy $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ in magnetic fields up to $47\phantom{\rule{0.3em}{0ex}}\mathrm{T}$. We observe a strong magnetophonon resonance effect and a large transverse magnetoresistance, which provide the means of measuring the N-induced enhancement of the electron effective mass and of investigating the magnetic freeze-out of conduction electrons on Si donors in $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$.
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electron effective mass and si donor binding energy in ga as 1 x n x probed by a high magnetic field
Physical Review B, 2008Co-Authors: G. Allison, Amalia Patanè, S. Spasov, Laurence Eaves, N. V. Kozlova, J. Freudenberger, Mark Hopkinson, G. HillAbstract:We study the magnetoresistance of the dilute Nitride Alloy $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ in magnetic fields up to $47\phantom{\rule{0.3em}{0ex}}\mathrm{T}$. We observe a strong magnetophonon resonance effect and a large transverse magnetoresistance, which provide the means of measuring the N-induced enhancement of the electron effective mass and of investigating the magnetic freeze-out of conduction electrons on Si donors in $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$.
Jacky Even - One of the best experts on this subject based on the ideXlab platform.
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Monolithic integration of GaAsPN dilute-Nitride compounds on silicon substrates: toward the III-V/Si tandem solar cell
2015Co-Authors: Olivier Durand, Alain Rolland, Samy Almosni, Charles Cornet, Jacky Even, Antoine Létoublon, Yanping Wang, Christophe Levallois, Nicolas Bertru, Alain Le CorreAbstract:GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted Nitride Alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN Alloy and our recent studies of all the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate) 100 nm-thick GaAsPN Alloy has been grown by MBE. After a post-growth annealing step, this Alloy displays a strong absorption around 1.8-1.9 eV eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. An early stage GaAsPN PIN solar cell prototype have been grown on a GaP (001) substrate. The quantum efficiency and the I-V curve show that carriers have been extracted from the GaAsPN Alloy absorber, with an open-circuit voltage around 1 eV, while however displaying a low short circuit current meaning that the GaAsPN structural properties needs an optimization. Considering all the pathways for improvement, the >2% efficiency obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual junction solar cell on silicon substrate. This work was supported by the French ANR, project MENHIRS (grant N°ANR-2011-PRGE-007-0).
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design of a lattice matched iii v n si photovoltaic tandem cell monolithically integrated on silicon substrate
Optical and Quantum Electronics, 2014Co-Authors: Alain Rolland, Laurent Pedesseau, Samy Almosni, Cedric Robert, Charles Cornet, Jean-marc Jancu, Jamal Benhlal, O Durand, Jacky Even, Alain Le CorreAbstract:In this paper, we present a comprehensive study of high efficiencies tandem solar cells monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAs(N) quantum dots and GaAsPN quantum wells have been grown recently on GaP/Si susbstrate for applications related to light emission. For photovoltaic applications, we consider the GaAsPN diluted Nitride Alloy as the top junction material due to both its perfect lattice matching with Si and ideal bandgap energy for current generation in association with the Si bottom cell. Numerical simulation of the top cell is performed. The effect of layer thicknesses and doping on the cell efficiency are evidenced. In these structures a tunnel junction (TJ) is needed to interconnect both the top and bottom sub-cells. We compare the simulated performances of different TJ structures and show that the GaP(n+)/Si(p+) TJ is promising to improve performances of the current-voltage characteristic.
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Theoretical study of optical properties of anti phase domains in GaP
Journal of Applied Physics, 2014Co-Authors: Julien Vidal, Laurent Pedesseau, Charles Cornet, Jean-marc Jancu, Jacky Even, Sana Laribi, Jean-françois Guillemoles, Olivier DurandAbstract:III-V/Si heterostructures are currently investigated for silicon photonics and solar energy conversion. In particular, dilute Nitride Alloy GaAsPN grown on a GaP/Si platform exhibits lattice match with Si and an optimal band gap configuration for tandem solar cell devices. However, monolithic “coherent” growth of the GaP thin layer on Si suffers from the nucleation of extended structural defects, which can hamper device operation as well as the GaP/Si interface level and through their propagation inside the overall heterostructure. However, the effect of such structural defects on optical and transport properties is actually not well understood in details. In this letter, we investigate the anti phase domains defect (also called inversion domains) by means of ab initio calculations giving insights into the alteration of optical and transport properties of GaP due to the defective GaP/Si interface.
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Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics
Energy Harvesting and Systems, 2014Co-Authors: Olivier Durand, Alain Rolland, Laurent Pedesseau, Samy Almosni, Cedric Robert, Charles Cornet, Yanping Wang, Christophe Levallois, A. Létoublon, Jacky EvenAbstract:GaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-Nitride Alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtain defect-free GaP/Si pseudo-substrates suitable for the subsequent GaAsPN top junctions growth. Result shows that a double-step growth procedure suppresses most of the microtwins and a bi-stepped Si buffer can be grown, suitable to reduce the anti-phase domains density. We also review our recent progress in materials development of the GaAsPN Alloy and our recent studies of all the different building blocks toward the development of a PIN solar cell. GaAsPN Alloy with energy bandgap around 1.8 eV, lattice matched with the Si substrate, has been achieved. This Alloy displays efficient photoluminescence at room temperature and good light absorption. An early-stage GaAsPN PIN solar cell prototype has been grown on a GaP(001) substrate. The external quantum efficiency and the I–V curve show that carriers have been extracted from the GaAsPN Alloy absorber, with an open-circuit voltage above 1 eV, however a low short-circuit current density obtained suggests that GaAsPN structural properties need further optimization. Considering all the pathways for improvement, the 2.25% efficiency and IQE around 35% obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual-junction solar cell on silicon substrate.