The Experts below are selected from a list of 58845 Experts worldwide ranked by ideXlab platform
Alejandro Piedrahita - One of the best experts on this subject based on the ideXlab platform.
-
a numerical method for a time fractional advection dispersion equation with a Nonlinear Source term
Journal of Applied Mathematics and Computing, 2019Co-Authors: Carlos E Mejia, Alejandro PiedrahitaAbstract:In this paper we propose an implicit finite-difference scheme to approximate the solution of an initial-boundary value problem for a time-fractional advection–dispersion equation with variable coefficients and a Nonlinear Source term. The time fractional derivative is taken in the sense of Caputo. The method is unconditionally stable and convergent. Some numerical examples are included and the results confirm the theoretical analysis. One of the examples is the fractional Fisher equation of mathematical biology.
-
A numerical method for a time-fractional advection–dispersion equation with a Nonlinear Source term
Journal of Applied Mathematics and Computing, 2019Co-Authors: Carlos E Mejia, Alejandro PiedrahitaAbstract:In this paper we propose an implicit finite-difference scheme to approximate the solution of an initial-boundary value problem for a time-fractional advection–dispersion equation with variable coefficients and a Nonlinear Source term. The time fractional derivative is taken in the sense of Caputo. The method is unconditionally stable and convergent. Some numerical examples are included and the results confirm the theoretical analysis. One of the examples is the fractional Fisher equation of mathematical biology.
Jeffrey B Shealy - One of the best experts on this subject based on the ideXlab platform.
-
Nonlinear Source resistance in high voltage microwave algan gan hfets
IEEE Transactions on Microwave Theory and Techniques, 2006Co-Authors: R J Trew, Y Liu, L Bilbro, W Kuang, Ramakrishna Vetury, Jeffrey B ShealyAbstract:Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices. Nitride-based heterostructure field-effect transistors can be biased at high drain voltages, up to and exceeding 100 V, which results in high RF output power. However, the operation of these devices at high drain bias introduces physical phenomena within the device that affect both dc and RF performance. In this study, the existence of a Nonlinear Source resistance due to space-charge limited current conditions is demonstrated and verified. Inclusion of the Nonlinear Source resistance in a physics-based device simulator produces excellent agreement between simulated and measured data. The Nonlinear Source resistance degrades RF performance and limits amplifier linearity.
-
Nonlinear Source resistance in high-voltage microwave AlGaN/GaN HFETs
IEEE Transactions on Microwave Theory and Techniques, 2006Co-Authors: R J Trew, Y Liu, L Bilbro, W Kuang, Ramakrishna Vetury, Jeffrey B ShealyAbstract:Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices. Nitride-based heterostructure field-effect transistors can be biased at high drain voltages, up to and exceeding 100 V, which results in high RF output power. However, the operation of these devices at high drain bias introduces physical phenomena within the device that affect both dc and RF performance. In this study, the existence of a Nonlinear Source resistance due to space-charge limited current conditions is demonstrated and verified. Inclusion of the Nonlinear Source resistance in a physics-based device simulator produces excellent agreement between simulated and measured data. The Nonlinear Source resistance degrades RF performance and limits amplifier linearity.
-
Space-Charge Limited Current and Nonlinear Source Resistance in Microwave AlGaN/GaN HFET's
2006 International Conference on Microwaves Radar & Wireless Communications, 2006Co-Authors: R J Trew, Y Liu, W Kuang, Ramakrishna Vetury, Griff L. Bilbro, Jeffrey B ShealyAbstract:Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs and InP-based devices. The critical electric fields for avalanche ionization in wide bandgap semiconductors, such as SiC and GaN, are about an order of magnitude greater than for traditional semiconductors such as Si, GaAs, and InP. Nitride-based HFET's can support drain bias voltages in the range of 40-50 v before breakdown occurs, and this results in the ability to generate significantly higher RF power than is possible with traditional GaAs FET's. In addition, the use of field-plate technology permits even greater drain bias to be applied. However, the operation of these devices at high drain bias introduces physical phenomena within the device that affect both dc and RF performance. In particular, the existence of a Nonlinear Source resistance is demonstrated and verified. Inclusion of the Nonlinear Source resistance in a physics-based device simulator produces excellent agreement between simulated and measured data. The Nonlinear Source resistance degrades RF performance and limits amplifier linearity.
Carlos E Mejia - One of the best experts on this subject based on the ideXlab platform.
-
a numerical method for a time fractional advection dispersion equation with a Nonlinear Source term
Journal of Applied Mathematics and Computing, 2019Co-Authors: Carlos E Mejia, Alejandro PiedrahitaAbstract:In this paper we propose an implicit finite-difference scheme to approximate the solution of an initial-boundary value problem for a time-fractional advection–dispersion equation with variable coefficients and a Nonlinear Source term. The time fractional derivative is taken in the sense of Caputo. The method is unconditionally stable and convergent. Some numerical examples are included and the results confirm the theoretical analysis. One of the examples is the fractional Fisher equation of mathematical biology.
-
A numerical method for a time-fractional advection–dispersion equation with a Nonlinear Source term
Journal of Applied Mathematics and Computing, 2019Co-Authors: Carlos E Mejia, Alejandro PiedrahitaAbstract:In this paper we propose an implicit finite-difference scheme to approximate the solution of an initial-boundary value problem for a time-fractional advection–dispersion equation with variable coefficients and a Nonlinear Source term. The time fractional derivative is taken in the sense of Caputo. The method is unconditionally stable and convergent. Some numerical examples are included and the results confirm the theoretical analysis. One of the examples is the fractional Fisher equation of mathematical biology.
R J Trew - One of the best experts on this subject based on the ideXlab platform.
-
RF Linearity and Nonlinear Source Resistance in AlGaN/GaN HFET's
2007 IEEE MTT-S International Microwave Symposium, 2007Co-Authors: Yueying Liu, R J Trew, Griff L. BilbroAbstract:Nonlinear Source resistance induced by the onset of space charge limited (SCL) transport at the gate-Source access region has been previously reported as an important linearity limitation for AlGaN/GaN HFET devices. A physics based large signal model has been modified to investigate for the first time the AlGaN/GaN HFET's IMD behavior due to Source resistance modulation as a function of device design parameters. The predictive capabilities of this model are demonstrated by comparing the results of measured and simulated RF performance. The variation of the IMD versus Lsg spacing and DC bias are investigated. Careful selection of Lsg spacing permits IMD improvement by reducing the Nonlinear Source resistance effect.
-
Nonlinear Source resistance in high voltage microwave algan gan hfets
IEEE Transactions on Microwave Theory and Techniques, 2006Co-Authors: R J Trew, Y Liu, L Bilbro, W Kuang, Ramakrishna Vetury, Jeffrey B ShealyAbstract:Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices. Nitride-based heterostructure field-effect transistors can be biased at high drain voltages, up to and exceeding 100 V, which results in high RF output power. However, the operation of these devices at high drain bias introduces physical phenomena within the device that affect both dc and RF performance. In this study, the existence of a Nonlinear Source resistance due to space-charge limited current conditions is demonstrated and verified. Inclusion of the Nonlinear Source resistance in a physics-based device simulator produces excellent agreement between simulated and measured data. The Nonlinear Source resistance degrades RF performance and limits amplifier linearity.
-
Nonlinear Source resistance in high-voltage microwave AlGaN/GaN HFETs
IEEE Transactions on Microwave Theory and Techniques, 2006Co-Authors: R J Trew, Y Liu, L Bilbro, W Kuang, Ramakrishna Vetury, Jeffrey B ShealyAbstract:Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs- and InP-based devices. Nitride-based heterostructure field-effect transistors can be biased at high drain voltages, up to and exceeding 100 V, which results in high RF output power. However, the operation of these devices at high drain bias introduces physical phenomena within the device that affect both dc and RF performance. In this study, the existence of a Nonlinear Source resistance due to space-charge limited current conditions is demonstrated and verified. Inclusion of the Nonlinear Source resistance in a physics-based device simulator produces excellent agreement between simulated and measured data. The Nonlinear Source resistance degrades RF performance and limits amplifier linearity.
-
Space-Charge Limited Current and Nonlinear Source Resistance in Microwave AlGaN/GaN HFET's
2006 International Conference on Microwaves Radar & Wireless Communications, 2006Co-Authors: R J Trew, Y Liu, W Kuang, Ramakrishna Vetury, Griff L. Bilbro, Jeffrey B ShealyAbstract:Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs and InP-based devices. The critical electric fields for avalanche ionization in wide bandgap semiconductors, such as SiC and GaN, are about an order of magnitude greater than for traditional semiconductors such as Si, GaAs, and InP. Nitride-based HFET's can support drain bias voltages in the range of 40-50 v before breakdown occurs, and this results in the ability to generate significantly higher RF power than is possible with traditional GaAs FET's. In addition, the use of field-plate technology permits even greater drain bias to be applied. However, the operation of these devices at high drain bias introduces physical phenomena within the device that affect both dc and RF performance. In particular, the existence of a Nonlinear Source resistance is demonstrated and verified. Inclusion of the Nonlinear Source resistance in a physics-based device simulator produces excellent agreement between simulated and measured data. The Nonlinear Source resistance degrades RF performance and limits amplifier linearity.
Ren Zhao - One of the best experts on this subject based on the ideXlab platform.
-
Clapeyron equation and phase equilibrium properties in higher dimensional charged topological dilaton AdS black holes with a Nonlinear Source
The European Physical Journal C, 2017Co-Authors: Hui-hua Zhao, Li-chun Zhang, Ren ZhaoAbstract:Using Maxwell’s equal area law, we discuss the phase transition of higher dimensional charged topological dilaton AdS black hole with a Nonlinear Source. The coexisting region of the two phases is found and we depict the coexistence region in the P–v diagrams. The two-phase equilibrium curves in the P–T diagrams are plotted, and we take the first order approximation of volume v in the calculation. To better compare with a general thermodynamic system, the Clapeyron equation is derived for a higher dimensional charged topological black hole with a Nonlinear Source. The latent heat of an isothermal phase transition is investigated. We also study the effect of the parameters of the black hole on the region of two-phase coexistence. The results show that the black hole may go through a small–large phase transition similar to those of usual non-gravity thermodynamic systems.
-
clapeyron equation and phase equilibrium properties in higher dimensional charged topological dilaton ads black holes with a Nonlinear Source
arXiv: General Relativity and Quantum Cosmology, 2016Co-Authors: Hui-hua Zhao, Li-chun Zhang, Ren ZhaoAbstract:Using Maxwell's equal area law, we discuss the phase transition of higher dimensional charged topological dilaton AdS black holes with a Nonlinear Source. The coexisting region of the two phases is found and we depict the coexistence region in $P-v$ diagrams. The two-phase equilibrium curves in $P-T$ diagrams are plotted, and we take the first order approximation of volume $v$ in the calculation. To better compare with a general thermodynamic system, the Clapeyron equation is derived for higher dimensional charged topological black hole with a Nonlinear Source. The latent heat of isothermal phase transition is investigated. We also study the effect of the parameters of the black hole on the region of two-phases coexistence. The results show that the black hole may go through a small-large phase transition similar to those of usual non-gravity thermodynamic systems.
