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Yuri V. Katunin - One of the best experts on this subject based on the ideXlab platform.
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Modeling the Charge Collection from a Track of an Ionizing Particle in Upset Hardened CMOS Trigger Elements
Russian Microelectronics, 2019Co-Authors: V. Ya. Stenin, Yuri V. KatuninAbstract:The charge collection from tracks of ionizing Nuclear Particles in CMOS trigger elements of the STG DICE type in the picosecond range is simulated using the 3D TCAD and the results are presented. The transient processes at the charge collection from tracks are analyzed (i) in the STG DICE D-trigger used for the cells of static memory, (ii) in the RS STG trigger, and (iii) in the logic C-element based on the STG DICE trigger for the asynchronous CMOS logic. The simulation results of the charge collection by the p – n junctions of both off and on transistors are presented. It is established that the charge collection from a track by MOS transistors begins in the off or on state and then transits to the charge collection in the inverse mode. The duration of the charge collection until the voltage extremum at the node of the trigger CMOS elements of the bulk 65-nm technology ranges from 5.5 to 17 ps, and the increments in the voltages of the extremums (maximums or minimums) at the nodes with respect to the voltages at the supply bus or at the common bus vary from 0.14 to 0.82 V. The duration of transistor occurrence in the inverse state ranges from 2 to 100 ps. The charge collection from tracks with the linear energy transfer (LET) of 60 MeV cm^2/mg do not lead to the upset of the logical function of the elements for the tracks through the transistors of one group of the STG DICE trigger when there is sufficient spacing between the groups of transistors. The investigation results are oriented to designing systems which operate under the conditions of the action of single Nuclear Particles.
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Logical C-Element on STG DICE Trigger for Asynchronous Digital Devices Resistant to Single Nuclear Particles
Russian Microelectronics, 2019Co-Authors: Yuri V. Katunin, V. Ya. SteninAbstract:The results of the TCAD modeling of a new CMOS logical C-element are presented. The logic element of the bulk 65-nm CMOS technology based on a modified STG DICE trigger with reduced switching delay and two inverters with the third state is designed for high-speed asynchronous CMOS-logic systems with increased noise immunity to the impacts of single Nuclear Particles. The transistors of the element are spaced into two groups in such a way that the collection of charge from the track of a single Nuclear particle by the transistors of only one of them cannot lead to a failure of the logical state of the C-element trigger in the mode of signal transmission from the element input to the output. The noise immunity can be increased by the separation of two groups of transistors at a distance that eliminates the simultaneous impact of a single Nuclear particle on both groups of transistors. The charge collection from the tracks with a linear energy transfer of 60 MeV cm^2/mg does not lead to failure of the logical function of the element and to failures in the transmission of common-mode logic signals by the C-element.
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design and simulation of the cmos rs logical elements with spacing between transistor groups for minimization of single event upsets
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT), 2018Co-Authors: Yuri V. Katunin, Vladimir Ya. SteninAbstract:The logical sequential element — RS trigger with spacing transistor groups (STG RS trigger) — was designed and TCAD simulated on the bulk 65-nm CMOS design rule. The effect of single-event upsets under impacts of single Nuclear Particles on this CMOS logical element was minimized by dividing the transistors of the RS trigger into two special double groups and spacing in between these groups. The topologies of logical elements with interleaving groups of the adjacent RS triggers were designed for the 65-nm CMOS translation lookaside buffers.
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translation lookaside buffer on the 65 nm stg dice hardened elements
Telecommunications Forum, 2018Co-Authors: Y Vladimir A Stenin, Artem V. Antonyuk, Yuri V. Katunin, Pavel V StepanovAbstract:This paper presents the design of hardened translation lookaside buffer based on Spaced Transistor Groups (STG) DICE cells in 65-nm bulk CMOS technology. The resistance to impacts of single Nuclear Particles is achieved by spacing transistors in two groups together with transistors of the output combinational logic. The elements contain two spaced identical groups of transistors. Charge collection from particle tracks by only transistors of just one of the two groups doesn't lead to the cell upset. The proposed logical element of matching based on the STG DICE cell for a contentaddressable memory was simulated using TCAD tool. The results show the resistance to impacts of single Nuclear Particles with linear energy transfer (LET) values up to 70 MeV×cm2/mg. Short-term noise pulses in combinational logic of the element can be observed in the range of LET values from 20 to 70 MeV×cm2/mg.
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Design of logical elements for the 65-nm CMOS translation lookaside buffer with compensation of single events effects
2017 International Siberian Conference on Control and Communications (SIBCON), 2017Co-Authors: Vladimir Ya. Stenin, Artem V. Antonyuk, Pavel Stepanov, Yuri V. KatuninAbstract:Logical elements for translation lookaside buffers were designed with single-event compensations and simulated on the bulk 65-nm CMOS design rule. The effects of upsets and single-event transients under impacts of single Nuclear Particles on MOS logical elements were minimized by the hardening the design. The basis of the fault-tolerant design is the hardened main row elements of the common matrix in arrays of Content-Addressable Memory (CAM) cells and RAM cells. The basis of the coincidence logic of CAM is combinational logic elements with the single-event compensation using masking and compensation.
Chang Ming Charlie - One of the best experts on this subject based on the ideXlab platform.
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photoNuclear dose calculations for high energy photon beams from siemens and varian linacs
Medical Physics, 2003Co-Authors: Omar Chibani, Chang Ming CharlieAbstract:The dose from photon-induced Nuclear Particles (neutrons,protons, and alpha Particles)generated by high-energy photonbeams from medical linacs is investigated. Monte Carlo calculations using the MCNPX code are performed for three different photonbeams from two different machines: Siemens 18 MV, Varian 15 MV, and Varian 18 MV. The linac head components are simulated in detail. The dose distributions from photons,neutrons,protons, and alpha Particles are calculated in a tissue-equivalent phantom. Neutrons are generated in both the linac head and the phantom. This study includes (a) field sizeeffects, (b) off-axis dose profiles, (c) neutron contribution from the linac head, (d) dose contribution from capture gamma rays, (e) phantom heterogeneity effects, and (f) effects of primary electron energy shift. Results are presented in terms of absolute dose distributions and also in terms of DER (dose equivalent ratio). The DER is the maximum dose from the particle (neutron,proton, or alpha) divided by the maximum photon dose, multiplied by the particle quality factor and the modulation scaling factor. The total DER including neutrons,protons, and alphas is about 0.66 cSv/Gy for the Siemens 18 MV beam (10 cm ×10 cm ). The neutron DER decreases with decreasing field size while the proton (or alpha) DER does not vary significantly except for the 1 cm ×1 cm field. Both Varian beams (15 and 18 MV) produce more neutrons,protons, and alphas Particles than the Siemens 18 MV beam. This is mainly due to their higher primary electron energies: 15 and 18.3 MeV, respectively, vs 14 MeV for the Siemens 18 MV beam. For all beams,neutrons contribute more than 75% of the total DER, except for the 1 cm ×1 cm field (∼50%). The total DER is 1.52 and 2.86 cSv/Gy for the 15 and 18 MV Varian beams (10 cm ×10 cm ), respectively. Media with relatively high- Z elements like bone may increase the dose from heavy charged Particles by a factor 4. The total DER is sensitive to primary electron energy shift. A Siemens 18 MV beam with 15 MeV (instead of 14 MeV) primary electrons would increase by 40% the neutron DER and by 210% the proton + alpha DER. Comparisons with measurements (neutron yields from different materials and neutron dose equivalent) are also presented. Using the NCRP risk assessment method, we found that the dose equivalent from leakage neutrons (at 50-cm off-axis distance) represent 1.1, 1.1, and 2.0% likelihood of fatal secondary cancer for a 70 Gy treatment delivered by the Siemens 18 MV, Varian 15 MV, and Varian 18 MV beams, respectively.
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photoNuclear dose calculations for high energy photon beams from siemens and varian linacs
Medical Physics, 2003Co-Authors: Omar Chibani, Chang Ming CharlieAbstract:The dose from photon-induced Nuclear Particles (neutrons, protons, and alpha Particles) generated by high-energy photon beams from medical linacs is investigated. Monte Carlo calculations using the MCNPX code are performed for three different photon beams from two different machines: Siemens 18 MV, Varian 15 MV, and Varian 18 MV. The linac head components are simulated in detail. The dose distributions from photons, neutrons, protons, and alpha Particles are calculated in a tissue-equivalent phantom. Neutrons are generated in both the linac head and the phantom. This study includes (a) field size effects, (b) off-axis dose profiles, (c) neutron contribution from the linac head, (d) dose contribution from capture gamma rays, (e) phantom heterogeneity effects, and (f) effects of primary electron energy shift. Results are presented in terms of absolute dose distributions and also in terms of DER (dose equivalent ratio). The DER is the maximum dose from the particle (neutron, proton, or alpha) divided by the maximum photon dose, multiplied by the particle quality factor and the modulation scaling factor. The total DER including neutrons, protons, and alphas is about 0.66 cSv/Gy for the Siemens 18 MV beam (10 cm x 10 cm). The neutron DER decreases with decreasing field size while the proton (or alpha) DER does not vary significantly except for the 1 cm x 1 cm field. Both Varian beams (15 and 18 MV) produce more neutrons, protons, and alphas Particles than the Siemens 18 MV beam. This is mainly due to their higher primary electron energies: 15 and 18.3 MeV, respectively, vs 14 MeV for the Siemens 18 MV beam. For all beams, neutrons contribute more than 75% of the total DER, except for the 1 cm x 1 cm field (approximately 50%). The total DER is 1.52 and 2.86 cSv/Gy for the 15 and 18 MV Varian beams (10 cm x 10 cm), respectively. Media with relatively high-Z elements like bone may increase the dose from heavy charged Particles by a factor 4. The total DER is sensitive to primary electron energy shift. A Siemens 18 MV beam with 15 MeV (instead of 14 MeV) primary electrons would increase by 40% the neutron DER and by 210% the proton + alpha DER. Comparisons with measurements (neutron yields from different materials and neutron dose equivalent) are also presented. Using the NCRP risk assessment method, we found that the dose equivalent from leakage neutrons (at 50-cm off-axis distance) represent 1.1, 1.1, and 2.0% likelihood of fatal secondary cancer for a 70 Gy treatment delivered by the Siemens 18 MV, Varian 15 MV, and Varian 18 MV beams, respectively.
Vladimir Ya. Stenin - One of the best experts on this subject based on the ideXlab platform.
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design and simulation of the cmos rs logical elements with spacing between transistor groups for minimization of single event upsets
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT), 2018Co-Authors: Yuri V. Katunin, Vladimir Ya. SteninAbstract:The logical sequential element — RS trigger with spacing transistor groups (STG RS trigger) — was designed and TCAD simulated on the bulk 65-nm CMOS design rule. The effect of single-event upsets under impacts of single Nuclear Particles on this CMOS logical element was minimized by dividing the transistors of the RS trigger into two special double groups and spacing in between these groups. The topologies of logical elements with interleaving groups of the adjacent RS triggers were designed for the 65-nm CMOS translation lookaside buffers.
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Design of logical elements for the 65-nm CMOS translation lookaside buffer with compensation of single events effects
2017 International Siberian Conference on Control and Communications (SIBCON), 2017Co-Authors: Vladimir Ya. Stenin, Artem V. Antonyuk, Pavel Stepanov, Yuri V. KatuninAbstract:Logical elements for translation lookaside buffers were designed with single-event compensations and simulated on the bulk 65-nm CMOS design rule. The effects of upsets and single-event transients under impacts of single Nuclear Particles on MOS logical elements were minimized by the hardening the design. The basis of the fault-tolerant design is the hardened main row elements of the common matrix in arrays of Content-Addressable Memory (CAM) cells and RAM cells. The basis of the coincidence logic of CAM is combinational logic elements with the single-event compensation using masking and compensation.
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Design of the 65-nm CMOS translation lookaside buffer on the hardened elements
2017 25th Telecommunication Forum (TELFOR), 2017Co-Authors: Vladimir Ya. Stenin, Artem V. Antonyuk, Pavel Stepanov, Yuri V. KatuninAbstract:The translation lookaside buffer is designed on the base of STG DICE cells with transistors which are spaced into two groups together with transistors of the output combinational logic. The elements contain two spaced identical blocks for the resistance to impacts of single Nuclear Particles compared to elements on 6-transistors memory cells. Basic elements that were used have no upsets of states during simulations at the linear energy transfer on tracks up to 60 MeV×cm2/mg. In combinational logic of the elements of matching and masking short-term noise pulses can occur.
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Noise immunity of a 28-nm two-phase CMOS combinational logic to transient effects of single Nuclear Particles
Russian Microelectronics, 2015Co-Authors: Yuri V. Katunin, Vladimir Ya. SteninAbstract:The noise immunity of a 28-nm CMOS combinational logic (by the example of a two-phase inverter) to the effect of single Nuclear Particles is substantially higher if the constructive capacity between the outputs of a two-phase inverter is substantially lower than the threshold value. In this case, weakened noise enters the next two-phase element. It does not vary its logic state but transfers it into a locked state for the noise duration. The threshold value of capacity is larger for the CMOS two-phase inverters with symmetric switching characteristics upon switching both from 1 to 0 and from 0 to 1. The threshold critical characteristic makes it possible to compare the CMOS two-phase elements fulfilled according to different design rules and evaluate the gain of the two-phase logics under the effect of single Particles on one of differential nodes. Critical charges of the two-phase elements substantially exceed (by a factor of at least 20 by the example of inverters) the critical charges of the CMOS traditional logic.
V. Ya. Stenin - One of the best experts on this subject based on the ideXlab platform.
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Modeling the Charge Collection from a Track of an Ionizing Particle in Upset Hardened CMOS Trigger Elements
Russian Microelectronics, 2019Co-Authors: V. Ya. Stenin, Yuri V. KatuninAbstract:The charge collection from tracks of ionizing Nuclear Particles in CMOS trigger elements of the STG DICE type in the picosecond range is simulated using the 3D TCAD and the results are presented. The transient processes at the charge collection from tracks are analyzed (i) in the STG DICE D-trigger used for the cells of static memory, (ii) in the RS STG trigger, and (iii) in the logic C-element based on the STG DICE trigger for the asynchronous CMOS logic. The simulation results of the charge collection by the p – n junctions of both off and on transistors are presented. It is established that the charge collection from a track by MOS transistors begins in the off or on state and then transits to the charge collection in the inverse mode. The duration of the charge collection until the voltage extremum at the node of the trigger CMOS elements of the bulk 65-nm technology ranges from 5.5 to 17 ps, and the increments in the voltages of the extremums (maximums or minimums) at the nodes with respect to the voltages at the supply bus or at the common bus vary from 0.14 to 0.82 V. The duration of transistor occurrence in the inverse state ranges from 2 to 100 ps. The charge collection from tracks with the linear energy transfer (LET) of 60 MeV cm^2/mg do not lead to the upset of the logical function of the elements for the tracks through the transistors of one group of the STG DICE trigger when there is sufficient spacing between the groups of transistors. The investigation results are oriented to designing systems which operate under the conditions of the action of single Nuclear Particles.
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Logical C-Element on STG DICE Trigger for Asynchronous Digital Devices Resistant to Single Nuclear Particles
Russian Microelectronics, 2019Co-Authors: Yuri V. Katunin, V. Ya. SteninAbstract:The results of the TCAD modeling of a new CMOS logical C-element are presented. The logic element of the bulk 65-nm CMOS technology based on a modified STG DICE trigger with reduced switching delay and two inverters with the third state is designed for high-speed asynchronous CMOS-logic systems with increased noise immunity to the impacts of single Nuclear Particles. The transistors of the element are spaced into two groups in such a way that the collection of charge from the track of a single Nuclear particle by the transistors of only one of them cannot lead to a failure of the logical state of the C-element trigger in the mode of signal transmission from the element input to the output. The noise immunity can be increased by the separation of two groups of transistors at a distance that eliminates the simultaneous impact of a single Nuclear particle on both groups of transistors. The charge collection from the tracks with a linear energy transfer of 60 MeV cm^2/mg does not lead to failure of the logical function of the element and to failures in the transmission of common-mode logic signals by the C-element.
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Simulation of the characteristics of the DICE 28-nm CMOS cells in unsteady states caused by the effect of single Nuclear Particles
Russian Microelectronics, 2015Co-Authors: V. Ya. SteninAbstract:Trigger transistors of the DICE CMOS memory cell can be divided into two groups and spaced topologically; and if the effect of single Nuclear particle affects transistors of only one group, no upset of the cell state occurs, while the cell transforms into the unsteady state. If transistors of the second group are simultaneously affected, and this effect exceeds the threshold one, then the upset of the initial state occurs. If the effect on the second group is lower than the threshold one, then the cell returns to the initial steady state from an unsteady one. Characteristics of the DICE CMOS memory cell with a 28-nm design rule are simulated and analyzed for unsteady states caused by the influence of a single Nuclear particle on transistors of only one or both groups of cell transistors.
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Modeling the characteristics of trigger elements of two-phase CMOS logic, taking into account the charge sharing effect under exposure to single Nuclear Particles
Russian Microelectronics, 2014Co-Authors: Yuri V. Katunin, V. Ya. Stenin, P. V. StepanovAbstract:The fault tolerance of CMOS D and RS flip-flops with a two-phase structure and memory cells based on them under exposure to single Nuclear Particles depends on the response to charge collection by several nodes. The relation between pairs of nodes with identical critical characteristics and specifics of symmetry of electric couplings between trigger transistors was established for DICE and Quatro cells. Critical pairs of nodes with minimal critical charges and an increased noise immunity were determined. The guidelines for mutual arrangement of transistors in DICE cells were given. The examples of quantitative estimation of critical dependences were given for cells with a 65 nm bulk CMOS design rule. DICE cells have an advantage in the event of multiple influence on the nodes.
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CMOS logic elements with increased failure resistance to single-event upsets
Russian Microelectronics, 2011Co-Authors: S. I. Ol’chev, V. Ya. SteninAbstract:Two-phase submicron CMOS logic elements with a design standard of 0.18 μm are analyzed that are based on two symmetric signal transfer and conversion logical channels (phases). The basic elements of two-phase CMOS logic are 2- and 4-transistor CMOS converters that form two-phase inverters, NAND elements, and D and RS triggers. Two-phase CMOS inverters based on 2-transistor converters with transversely connected inputs and elements based on these inverters, NAND elements and D and RS triggers also with transversely connected constituent elements, are the best ones with respect to the set of parameters, including the failure resistance to single-event upsets (with respect to the value of the critical switching charge), size, and switching time. The values of the critical switching charges of the elements of two-phase CMOS logic under exposure to individual Nuclear Particles that induce ionization currents with fall-time constants (diffusion component) from 0.3 ns to 2.0 ns are determined.
Omar Chibani - One of the best experts on this subject based on the ideXlab platform.
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photoNuclear dose calculations for high energy photon beams from siemens and varian linacs
Medical Physics, 2003Co-Authors: Omar Chibani, Chang Ming CharlieAbstract:The dose from photon-induced Nuclear Particles (neutrons,protons, and alpha Particles)generated by high-energy photonbeams from medical linacs is investigated. Monte Carlo calculations using the MCNPX code are performed for three different photonbeams from two different machines: Siemens 18 MV, Varian 15 MV, and Varian 18 MV. The linac head components are simulated in detail. The dose distributions from photons,neutrons,protons, and alpha Particles are calculated in a tissue-equivalent phantom. Neutrons are generated in both the linac head and the phantom. This study includes (a) field sizeeffects, (b) off-axis dose profiles, (c) neutron contribution from the linac head, (d) dose contribution from capture gamma rays, (e) phantom heterogeneity effects, and (f) effects of primary electron energy shift. Results are presented in terms of absolute dose distributions and also in terms of DER (dose equivalent ratio). The DER is the maximum dose from the particle (neutron,proton, or alpha) divided by the maximum photon dose, multiplied by the particle quality factor and the modulation scaling factor. The total DER including neutrons,protons, and alphas is about 0.66 cSv/Gy for the Siemens 18 MV beam (10 cm ×10 cm ). The neutron DER decreases with decreasing field size while the proton (or alpha) DER does not vary significantly except for the 1 cm ×1 cm field. Both Varian beams (15 and 18 MV) produce more neutrons,protons, and alphas Particles than the Siemens 18 MV beam. This is mainly due to their higher primary electron energies: 15 and 18.3 MeV, respectively, vs 14 MeV for the Siemens 18 MV beam. For all beams,neutrons contribute more than 75% of the total DER, except for the 1 cm ×1 cm field (∼50%). The total DER is 1.52 and 2.86 cSv/Gy for the 15 and 18 MV Varian beams (10 cm ×10 cm ), respectively. Media with relatively high- Z elements like bone may increase the dose from heavy charged Particles by a factor 4. The total DER is sensitive to primary electron energy shift. A Siemens 18 MV beam with 15 MeV (instead of 14 MeV) primary electrons would increase by 40% the neutron DER and by 210% the proton + alpha DER. Comparisons with measurements (neutron yields from different materials and neutron dose equivalent) are also presented. Using the NCRP risk assessment method, we found that the dose equivalent from leakage neutrons (at 50-cm off-axis distance) represent 1.1, 1.1, and 2.0% likelihood of fatal secondary cancer for a 70 Gy treatment delivered by the Siemens 18 MV, Varian 15 MV, and Varian 18 MV beams, respectively.
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photoNuclear dose calculations for high energy photon beams from siemens and varian linacs
Medical Physics, 2003Co-Authors: Omar Chibani, Chang Ming CharlieAbstract:The dose from photon-induced Nuclear Particles (neutrons, protons, and alpha Particles) generated by high-energy photon beams from medical linacs is investigated. Monte Carlo calculations using the MCNPX code are performed for three different photon beams from two different machines: Siemens 18 MV, Varian 15 MV, and Varian 18 MV. The linac head components are simulated in detail. The dose distributions from photons, neutrons, protons, and alpha Particles are calculated in a tissue-equivalent phantom. Neutrons are generated in both the linac head and the phantom. This study includes (a) field size effects, (b) off-axis dose profiles, (c) neutron contribution from the linac head, (d) dose contribution from capture gamma rays, (e) phantom heterogeneity effects, and (f) effects of primary electron energy shift. Results are presented in terms of absolute dose distributions and also in terms of DER (dose equivalent ratio). The DER is the maximum dose from the particle (neutron, proton, or alpha) divided by the maximum photon dose, multiplied by the particle quality factor and the modulation scaling factor. The total DER including neutrons, protons, and alphas is about 0.66 cSv/Gy for the Siemens 18 MV beam (10 cm x 10 cm). The neutron DER decreases with decreasing field size while the proton (or alpha) DER does not vary significantly except for the 1 cm x 1 cm field. Both Varian beams (15 and 18 MV) produce more neutrons, protons, and alphas Particles than the Siemens 18 MV beam. This is mainly due to their higher primary electron energies: 15 and 18.3 MeV, respectively, vs 14 MeV for the Siemens 18 MV beam. For all beams, neutrons contribute more than 75% of the total DER, except for the 1 cm x 1 cm field (approximately 50%). The total DER is 1.52 and 2.86 cSv/Gy for the 15 and 18 MV Varian beams (10 cm x 10 cm), respectively. Media with relatively high-Z elements like bone may increase the dose from heavy charged Particles by a factor 4. The total DER is sensitive to primary electron energy shift. A Siemens 18 MV beam with 15 MeV (instead of 14 MeV) primary electrons would increase by 40% the neutron DER and by 210% the proton + alpha DER. Comparisons with measurements (neutron yields from different materials and neutron dose equivalent) are also presented. Using the NCRP risk assessment method, we found that the dose equivalent from leakage neutrons (at 50-cm off-axis distance) represent 1.1, 1.1, and 2.0% likelihood of fatal secondary cancer for a 70 Gy treatment delivered by the Siemens 18 MV, Varian 15 MV, and Varian 18 MV beams, respectively.
