The Experts below are selected from a list of 150 Experts worldwide ranked by ideXlab platform
Bernd Rech - One of the best experts on this subject based on the ideXlab platform.
-
planar rear emitter back contact silicon heterojunction solar cells
Solar Energy Materials and Solar Cells, 2009Co-Authors: R. Stangl, Lars Korte, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd RechAbstract:A planar rear emitter back contact silicon heterojunction (PreBC-SHJ) solar cell design is presented, which combines the advantages of different high efficiency concepts using point contacts, back contacts, and silicon heterojunctions. Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a planar hydrogenated amorphous silicon emitter layer deposited at low temperature on the rear side. The new solar cell design requires less structuring and allows large structure sizes, enabling the use of low-cost patterning technologies such as inkjet printing or screen printing. By means of Numerical Computer Simulation the efficiency potential of back contacted heterojunction solar cells is shown to exceed 24%. First PreBC-SHJ solar cells have been realized and exhibit higher short circuit currents than our state-of-the-art front contacted silicon heterojunction reference solar cells.
-
planar rear emitter back contact amorphous crystalline silicon heterojunction solar cells recash precash
Photovoltaic Specialists Conference, 2008Co-Authors: R. Stangl, M. Schmidt, Jan Haschke, M Bivour, K Lips, Bernd RechAbstract:Point / stripe contacted, planar rear emitter back contact amorphous/crystalline Silicon, a-Si:H/c-Si, heterojunction solar cells are presented (RECASH / PRECASH solar cells), combining the high efficiency concepts of silicon heterojunctions (high V OC potential) and back contacts (high I SC potential). Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a low temperature deposited rear side planar amorphous silicon emitter layer. The new contacting schemes for back contacted a-Si:H/c-Si heterojunction solar cells require less structuring and enable the use of low cost patterning technologies which result in a large structure size (i.e. inkjet printing, screen printing). The efficiency potential of back contacted a-Si:H/c-Si heterojunction solar cells (> 24 %) is discussed by means of Numerical Computer Simulation. First RECASH and PRECASH solar cells have been realized and are compared to a conventional front contacted a-Si:H/c-Si heterojunction solar cell (SHJ). The predicted higher short circuit current potential of back contacted a-Si:H/c-Si heterojunction solar cells could be proofed.
R. Stangl - One of the best experts on this subject based on the ideXlab platform.
-
planar rear emitter back contact silicon heterojunction solar cells
Solar Energy Materials and Solar Cells, 2009Co-Authors: R. Stangl, Lars Korte, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd RechAbstract:A planar rear emitter back contact silicon heterojunction (PreBC-SHJ) solar cell design is presented, which combines the advantages of different high efficiency concepts using point contacts, back contacts, and silicon heterojunctions. Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a planar hydrogenated amorphous silicon emitter layer deposited at low temperature on the rear side. The new solar cell design requires less structuring and allows large structure sizes, enabling the use of low-cost patterning technologies such as inkjet printing or screen printing. By means of Numerical Computer Simulation the efficiency potential of back contacted heterojunction solar cells is shown to exceed 24%. First PreBC-SHJ solar cells have been realized and exhibit higher short circuit currents than our state-of-the-art front contacted silicon heterojunction reference solar cells.
-
planar rear emitter back contact amorphous crystalline silicon heterojunction solar cells recash precash
Photovoltaic Specialists Conference, 2008Co-Authors: R. Stangl, M. Schmidt, Jan Haschke, M Bivour, K Lips, Bernd RechAbstract:Point / stripe contacted, planar rear emitter back contact amorphous/crystalline Silicon, a-Si:H/c-Si, heterojunction solar cells are presented (RECASH / PRECASH solar cells), combining the high efficiency concepts of silicon heterojunctions (high V OC potential) and back contacts (high I SC potential). Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a low temperature deposited rear side planar amorphous silicon emitter layer. The new contacting schemes for back contacted a-Si:H/c-Si heterojunction solar cells require less structuring and enable the use of low cost patterning technologies which result in a large structure size (i.e. inkjet printing, screen printing). The efficiency potential of back contacted a-Si:H/c-Si heterojunction solar cells (> 24 %) is discussed by means of Numerical Computer Simulation. First RECASH and PRECASH solar cells have been realized and are compared to a conventional front contacted a-Si:H/c-Si heterojunction solar cell (SHJ). The predicted higher short circuit current potential of back contacted a-Si:H/c-Si heterojunction solar cells could be proofed.
-
AFORS-HET, Version 2.2, a Numerical Computer Program for Simulation of Heterojunction Solar Cells and Measurements
2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006Co-Authors: R. Stangl, M. Kriegel, M. SchmidtAbstract:We offer the new (open source on demand) Version 2.2 of AFORS-HET, a Numerical Computer Simulation program for modeling heterojunction solar cells and measurements. Within this version, several transient state measurements have been implemented. Furthermore, the interface models have been refined and a specific model for crystalline silicon has been implemented, taking the specific temperature and doping dependence of this material into account. Additionally, a multi-dimensional parameter optimization has been implemented, allowing for example to optimize several parameters in order to obtain the maximum solar cell efficiency. AFORS-HET will be distributed free of charge on CD-ROM at the conference site and can also be downloaded via internet: www.hmi.de/bereiche/SE/SE1/projects/aSicSi/AFORS-HET.
-
Design criteria for amorphous/crystalline silicon heterojunction solar cells - a Simulation study
2003Co-Authors: R. Stangl, M. Schmidt, A. Froitzheim, W. FuhsAbstract:Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H(n)/c-Si(p), are investigated by means of Numerical Computer Simulation. The influence of (1) the a-Si:H(n) emitter thickness, (2) the defect density of the emitter/wafer interface and (3) the TCO/emitter front contact system on the solar cell-performance is studied and compared with experimental results. The use of an intrinsic a-Si:H(i) buffer layer and of a p-doped a-Si:H(p) back surface field layer is addressed, modelling TCO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(p) solar cell structures. Some general design criteria for a-Si:H/c-Si heterojunction solar cells are derived, suggesting an optimum emitter thickness for a given (measured) front contact TCO/emitter built-in potential.
-
AFORS-HET, an open-source on demand Numerical PC program for Simulation of (thin film) heterojunction solar cells, version 1.2
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference 2005., 1Co-Authors: R. Stangl, M. Kriegel, K.v. Maydell, Lars Korte, M. Schmidt, W. FuhsAbstract:We offer the open-source on demand version 1.2 of AFORS-HET, a Numerical Computer Simulation program for modelling (thin film) heterojunction solar cells. It is distributed free of charge by download via internet: www.hmi.de/bereiche/SE/SE1/projects/aSicSi/AFORS-HET.
Wenjing Wang - One of the best experts on this subject based on the ideXlab platform.
-
optimized resistivity of p type si substrate for hit solar cell with al back surface field by Computer Simulation
Solar Energy, 2009Co-Authors: L Zhao, Congcong Zhou, H W Diao, Wenjing WangAbstract:Abstract For HIT (heterojunction with intrinsic thin-layer) solar cell with Al back surface field on p-type Si substrate, the impacts of substrate resistivity on the solar cell performance were investigated by utilizing AFORS-HET software as a Numerical Computer Simulation tool. The results show that the optimized substrate resistivity (Rop) to obtain the maximal solar cell efficiency is relative to the bulk defect density, such as oxygen defect density (Dod), in the substrate and the interface defect density (Dit) on the interface of amorphous/crystalline Si heterojunction. The larger Dod or Dit is, the higher Rop is. The effect of Dit is more obvious. Rop is about 0.5 Ω cm for Dit = 1.0 × 1011/cm2, but is higher than 1.0 Ω cm for Dit = 1.0 × 1012/cm2. In order to obtain very excellent solar cell performance, Si substrate, with the resistivity of 0.5 Ω cm, Dod lower than 1.0 × 1010/cm3, and Dit lower than 1.0 × 1011/cm2, is preferred, which is different to the traditional opinion that 1.0 Ω cm resistivity is the best.
-
role of the work function of transparent conductive oxide on the performance of amorphous crystalline silicon heterojunction solar cells studied by Computer Simulation
Physica Status Solidi (a), 2008Co-Authors: L Zhao, Chunlan Zhou, Hongwei Diao, Wenjing WangAbstract:The role of the work function of transparent conductive oxide (WTCO) on the performance of amorphous/crystalline silicon heterojunction (SHJ) solar cells was investigated in detail with other various parameters by utilizing AFORS-HET software as a Numerical Computer Simulation tool. The results for SHJ solar cells based on p-type and n-type substrates were demonstrated and analyzed comparatively with or without the insertion of the intrinsic amorphous silicon layer between the doped amorphous emitter and the crystalline base. It was indicated that there was an optimized threshold thickness of the emitter for the solar cells to obtain the best performance for any given WTCO and the doping concentration of the emitter. Thus, design criteria of TCO/emitter for the practical SHJ solar cells were provided. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
-
Role of the work function of transparent conductive oxide on the performance of amorphous/crystalline silicon heterojunction solar cells studied by Computer Simulation
physica status solidi (a), 2008Co-Authors: L Zhao, Chunlan Zhou, Hongwei Diao, Wenjing WangAbstract:The role of the work function of transparent conductive oxide (W{sub TCO}) on the performance of amorphous/crystalline silicon heterojunction (SHJ) solar cells was investigated in detail with other various parameters by utilizing AFORS-HET software as a Numerical Computer Simulation tool. The results for SHJ solar cells based on p-type and n-type substrates were demonstrated and analyzed comparatively with or without the insertion of the intrinsic amorphous silicon layer between the doped amorphous emitter and the crystalline base. It was indicated that there was an optimized threshold thickness of the emitter for the solar cells to obtain the best performance for any given W{sub TCO} and the doping concentration of the emitter. Thus, design criteria of TCO/emitter for the practical SHJ solar cells were provided. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
L Zhao - One of the best experts on this subject based on the ideXlab platform.
-
optimized resistivity of p type si substrate for hit solar cell with al back surface field by Computer Simulation
Solar Energy, 2009Co-Authors: L Zhao, Congcong Zhou, H W Diao, Wenjing WangAbstract:Abstract For HIT (heterojunction with intrinsic thin-layer) solar cell with Al back surface field on p-type Si substrate, the impacts of substrate resistivity on the solar cell performance were investigated by utilizing AFORS-HET software as a Numerical Computer Simulation tool. The results show that the optimized substrate resistivity (Rop) to obtain the maximal solar cell efficiency is relative to the bulk defect density, such as oxygen defect density (Dod), in the substrate and the interface defect density (Dit) on the interface of amorphous/crystalline Si heterojunction. The larger Dod or Dit is, the higher Rop is. The effect of Dit is more obvious. Rop is about 0.5 Ω cm for Dit = 1.0 × 1011/cm2, but is higher than 1.0 Ω cm for Dit = 1.0 × 1012/cm2. In order to obtain very excellent solar cell performance, Si substrate, with the resistivity of 0.5 Ω cm, Dod lower than 1.0 × 1010/cm3, and Dit lower than 1.0 × 1011/cm2, is preferred, which is different to the traditional opinion that 1.0 Ω cm resistivity is the best.
-
role of the work function of transparent conductive oxide on the performance of amorphous crystalline silicon heterojunction solar cells studied by Computer Simulation
Physica Status Solidi (a), 2008Co-Authors: L Zhao, Chunlan Zhou, Hongwei Diao, Wenjing WangAbstract:The role of the work function of transparent conductive oxide (WTCO) on the performance of amorphous/crystalline silicon heterojunction (SHJ) solar cells was investigated in detail with other various parameters by utilizing AFORS-HET software as a Numerical Computer Simulation tool. The results for SHJ solar cells based on p-type and n-type substrates were demonstrated and analyzed comparatively with or without the insertion of the intrinsic amorphous silicon layer between the doped amorphous emitter and the crystalline base. It was indicated that there was an optimized threshold thickness of the emitter for the solar cells to obtain the best performance for any given WTCO and the doping concentration of the emitter. Thus, design criteria of TCO/emitter for the practical SHJ solar cells were provided. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
-
Role of the work function of transparent conductive oxide on the performance of amorphous/crystalline silicon heterojunction solar cells studied by Computer Simulation
physica status solidi (a), 2008Co-Authors: L Zhao, Chunlan Zhou, Hongwei Diao, Wenjing WangAbstract:The role of the work function of transparent conductive oxide (W{sub TCO}) on the performance of amorphous/crystalline silicon heterojunction (SHJ) solar cells was investigated in detail with other various parameters by utilizing AFORS-HET software as a Numerical Computer Simulation tool. The results for SHJ solar cells based on p-type and n-type substrates were demonstrated and analyzed comparatively with or without the insertion of the intrinsic amorphous silicon layer between the doped amorphous emitter and the crystalline base. It was indicated that there was an optimized threshold thickness of the emitter for the solar cells to obtain the best performance for any given W{sub TCO} and the doping concentration of the emitter. Thus, design criteria of TCO/emitter for the practical SHJ solar cells were provided. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
K Lips - One of the best experts on this subject based on the ideXlab platform.
-
planar rear emitter back contact silicon heterojunction solar cells
Solar Energy Materials and Solar Cells, 2009Co-Authors: R. Stangl, Lars Korte, Jan Haschke, M Bivour, Matthieu Schmidt, K Lips, Bernd RechAbstract:A planar rear emitter back contact silicon heterojunction (PreBC-SHJ) solar cell design is presented, which combines the advantages of different high efficiency concepts using point contacts, back contacts, and silicon heterojunctions. Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a planar hydrogenated amorphous silicon emitter layer deposited at low temperature on the rear side. The new solar cell design requires less structuring and allows large structure sizes, enabling the use of low-cost patterning technologies such as inkjet printing or screen printing. By means of Numerical Computer Simulation the efficiency potential of back contacted heterojunction solar cells is shown to exceed 24%. First PreBC-SHJ solar cells have been realized and exhibit higher short circuit currents than our state-of-the-art front contacted silicon heterojunction reference solar cells.
-
planar rear emitter back contact amorphous crystalline silicon heterojunction solar cells recash precash
Photovoltaic Specialists Conference, 2008Co-Authors: R. Stangl, M. Schmidt, Jan Haschke, M Bivour, K Lips, Bernd RechAbstract:Point / stripe contacted, planar rear emitter back contact amorphous/crystalline Silicon, a-Si:H/c-Si, heterojunction solar cells are presented (RECASH / PRECASH solar cells), combining the high efficiency concepts of silicon heterojunctions (high V OC potential) and back contacts (high I SC potential). Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a low temperature deposited rear side planar amorphous silicon emitter layer. The new contacting schemes for back contacted a-Si:H/c-Si heterojunction solar cells require less structuring and enable the use of low cost patterning technologies which result in a large structure size (i.e. inkjet printing, screen printing). The efficiency potential of back contacted a-Si:H/c-Si heterojunction solar cells (> 24 %) is discussed by means of Numerical Computer Simulation. First RECASH and PRECASH solar cells have been realized and are compared to a conventional front contacted a-Si:H/c-Si heterojunction solar cell (SHJ). The predicted higher short circuit current potential of back contacted a-Si:H/c-Si heterojunction solar cells could be proofed.
