The Experts below are selected from a list of 360 Experts worldwide ranked by ideXlab platform
Nick Holonyak - One of the best experts on this subject based on the ideXlab platform.
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4.3 GHz Optical Bandwidth light emitting transistor
Applied Physics Letters, 2009Co-Authors: Gabriel Walter, Han Wui Then, Milton Feng, Nick HolonyakAbstract:We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB Optical response Bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, β (=|ΔIC/ΔIB|) as high as 30, and can be operated as a three-port device to provide simultaneously an Optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that “fast” spontaneous recombination can be harnessed for high-speed modulation.
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Optical Bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal
Applied Physics Letters, 2008Co-Authors: Han Wui Then, Gabriel Walter, Milton Feng, Nick HolonyakAbstract:We report the improvement, from 10.5to22GHz, in the Optical modulation Bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, β(=ICO∕IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the “faster” QW collector (reduced β) and differential gain, result in a higher 3dB Bandwidth (f3dB=1∕2πτ).
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Optical Bandwidth enhancement by operation and modulation of the first excited state of a transistor laser
Applied Physics Letters, 2007Co-Authors: Han Wui Then, Milton Feng, Nick HolonyakAbstract:A model is developed to explain the large increase in the high-speed performance of the transistor laser (TL) operating on the first excited state (λ=980nm) compared to ground state (1000nm). The model shows that the Bandwidth of the TL (absent resonance peaks) increases as much as twofold when it shifts operation from ground to first excited state. No assumption of upper subband state filling is necessary in the calculation consistent with no “pileup” of charge in the upper subbands because of the transistor boundary condition at the electrical collector of zero charge density (collector current IC≠0) resulting in a “tilted” emitter-to-collector population distribution.
Han Wui Then - One of the best experts on this subject based on the ideXlab platform.
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4.3 GHz Optical Bandwidth light emitting transistor
Applied Physics Letters, 2009Co-Authors: Gabriel Walter, Han Wui Then, Milton Feng, Nick HolonyakAbstract:We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB Optical response Bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, β (=|ΔIC/ΔIB|) as high as 30, and can be operated as a three-port device to provide simultaneously an Optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that “fast” spontaneous recombination can be harnessed for high-speed modulation.
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Optical Bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal
Applied Physics Letters, 2008Co-Authors: Han Wui Then, Gabriel Walter, Milton Feng, Nick HolonyakAbstract:We report the improvement, from 10.5to22GHz, in the Optical modulation Bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, β(=ICO∕IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the “faster” QW collector (reduced β) and differential gain, result in a higher 3dB Bandwidth (f3dB=1∕2πτ).
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Optical Bandwidth enhancement by operation and modulation of the first excited state of a transistor laser
Applied Physics Letters, 2007Co-Authors: Han Wui Then, Milton Feng, Nick HolonyakAbstract:A model is developed to explain the large increase in the high-speed performance of the transistor laser (TL) operating on the first excited state (λ=980nm) compared to ground state (1000nm). The model shows that the Bandwidth of the TL (absent resonance peaks) increases as much as twofold when it shifts operation from ground to first excited state. No assumption of upper subband state filling is necessary in the calculation consistent with no “pileup” of charge in the upper subbands because of the transistor boundary condition at the electrical collector of zero charge density (collector current IC≠0) resulting in a “tilted” emitter-to-collector population distribution.
Milton Feng - One of the best experts on this subject based on the ideXlab platform.
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4.3 GHz Optical Bandwidth light emitting transistor
Applied Physics Letters, 2009Co-Authors: Gabriel Walter, Han Wui Then, Milton Feng, Nick HolonyakAbstract:We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB Optical response Bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, β (=|ΔIC/ΔIB|) as high as 30, and can be operated as a three-port device to provide simultaneously an Optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that “fast” spontaneous recombination can be harnessed for high-speed modulation.
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Optical Bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal
Applied Physics Letters, 2008Co-Authors: Han Wui Then, Gabriel Walter, Milton Feng, Nick HolonyakAbstract:We report the improvement, from 10.5to22GHz, in the Optical modulation Bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, β(=ICO∕IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the “faster” QW collector (reduced β) and differential gain, result in a higher 3dB Bandwidth (f3dB=1∕2πτ).
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Optical Bandwidth enhancement by operation and modulation of the first excited state of a transistor laser
Applied Physics Letters, 2007Co-Authors: Han Wui Then, Milton Feng, Nick HolonyakAbstract:A model is developed to explain the large increase in the high-speed performance of the transistor laser (TL) operating on the first excited state (λ=980nm) compared to ground state (1000nm). The model shows that the Bandwidth of the TL (absent resonance peaks) increases as much as twofold when it shifts operation from ground to first excited state. No assumption of upper subband state filling is necessary in the calculation consistent with no “pileup” of charge in the upper subbands because of the transistor boundary condition at the electrical collector of zero charge density (collector current IC≠0) resulting in a “tilted” emitter-to-collector population distribution.
Frederic Van Dijk - One of the best experts on this subject based on the ideXlab platform.
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wide Optical Bandwidth and high output power superluminescent diode covering c and l band
IEEE Photonics Technology Letters, 2014Co-Authors: Mickael Faugeron, Romain Brenot, Francois Lelarge, Catherine Fortin, Yannick Robert, Eric Vinet, Frederic Van DijkAbstract:We report on the development of a novel superluminescent diode (SLD) design with high output power and a wide Optical Bandwidth operation. The SLD combines an asymmetrical cladding structure for reduced internal losses and thick quantum wells to obtain emission from both the fundamental level and the first excited level. The ${-}{\rm 3}~{\rm dB}$ Optical Bandwidth is equal to 135 nm for a 2-mm long device. For longer devices, the Optical Bandwidth is slightly reduced but the Optical output power increases. By reinjecting a part of the Optical power using an external reflector we obtain 27 mW of output power.
Sangyung Shin - One of the best experts on this subject based on the ideXlab platform.
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0 1 nm narrow Bandwidth transmission of a 2 5 gb s spectrum sliced incoherent light channel using an all Optical Bandwidth expansion technique at the receiver
IEEE Photonics Technology Letters, 1998Co-Authors: Junghee Han, Jaeseung Lee, Sangyung ShinAbstract:We introduce a new all-Optical technique to transmit a spectrum-sliced incoherent channel with its Optical Bandwidth smaller than the conventional limit. As a demonstration, we reduce the Optical Bandwidth to only 0.1 nm for the 2.5-Gb/s incoherent channel transmission. Even though the signal-to-noise ratio (SNR) is poor during the transmission, sufficient SNR can be obtained through the intrachannel four-wave mixing at the receiver. With this slim Bandwidth transmission technique, the maximum number of spectrum-sliced wavelength-division-multiplexed channels can be increased greatly and the dispersion penalty can be reduced simultaneously.
