The Experts below are selected from a list of 65376 Experts worldwide ranked by ideXlab platform
Lin-bao Luo - One of the best experts on this subject based on the ideXlab platform.
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recent advances in the fabrication of graphene zno heterojunctions for Optoelectronic Device applications
Journal of Materials Chemistry C, 2018Co-Authors: Fengxia Liang, Chao Xie, Yang Gao, Xiaowei Tong, Lin-bao LuoAbstract:Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric Devices that combine graphene and ZnO have exhibited excellent Device performances and attracted increasing research interest. However, although significant achievements have been made, many challenges still exist. In this review paper, we comprehensively summarize the recent advances in the fabrication of various graphene (also including reduced graphene oxide)–ZnO (e.g. ZnO films, nanowires, nanotubes, nanorods etc.) hybrid heterostructures, and their application in a number of Optoelectronic Devices, including photodiodes, phototransistors, solar cells, light emitting diodes (LEDs), lasers and so on. We start by briefly surveying the recent progress in the fabrication methodologies such as low-temperature and high-temperature methods. And then, we will elaborate on the Optoelectronic Device application in terms of Device physics, performance analysis, and Device optimization approaches. Finally, we close with some unresolved issues and challenges in this field.
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graphene semiconductor hybrid heterostructures for Optoelectronic Device applications
Nano Today, 2018Co-Authors: Chao Xie, Yi Wang, Zhi-xiang Zhang, Di Wang, Lin-bao LuoAbstract:Abstract As one of the most appealing two-dimensional materials, graphene (Gr) has attracted tremendous research interest in Optoelectronic Device applications for its plenty of exceptional electrical and optical properties. The emergence of Gr/semiconductor hybrid heterostructures provides a promising platform for assembling high-performance Optoelectronic Devices that can overcome intrinsic limitations of Gr. However, although significant achievements have been made, many challenges still exist. Here, we comprehensively review the progress in the development of various Optoelectronic Devices based on Gr/semiconductor hybrid heterostructures, including /group II-VI nanostructures, /group III-V semiconductors, /group IV semiconductors, /metal oxides and /other semiconductors, in terms of the Device design, Device performance and physics, processing techniques for performance optimization, etc. In the final section, conclusions of the existing techniques are presented and future challenges in Optoelectronic applications of Gr/semiconductor hybrid heterostructures are addressed.
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Graphene/Semiconductor Hybrid Heterostructures for Optoelectronic Device Applications
Nano Today, 2018Co-Authors: Chao Xie, Yi Wang, Zhi-xiang Zhang, Di Wang, Lin-bao LuoAbstract:Abstract As one of the most appealing two-dimensional materials, graphene (Gr) has attracted tremendous research interest in Optoelectronic Device applications for its plenty of exceptional electrical and optical properties. The emergence of Gr/semiconductor hybrid heterostructures provides a promising platform for assembling high-performance Optoelectronic Devices that can overcome intrinsic limitations of Gr. However, although significant achievements have been made, many challenges still exist. Here, we comprehensively review the progress in the development of various Optoelectronic Devices based on Gr/semiconductor hybrid heterostructures, including /group II-VI nanostructures, /group III-V semiconductors, /group IV semiconductors, /metal oxides and /other semiconductors, in terms of the Device design, Device performance and physics, processing techniques for performance optimization, etc. In the final section, conclusions of the existing techniques are presented and future challenges in Optoelectronic applications of Gr/semiconductor hybrid heterostructures are addressed.
Lin Dong - One of the best experts on this subject based on the ideXlab platform.
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enhanced emission intensity of vertical aligned flexible zno nanowire p polymer hybridized led array by piezo phototronic effect
Nano Energy, 2015Co-Authors: Taiping Zhang, Chunfeng Wang, Kun Zhao, Lin DongAbstract:Abstract Flexible Optoelectronic Device arrays are critically desirable for next-generation digital display, seamless integration of Optoelectronics with biomedical and human–machine interactive systems and many other applications. Here we report a flexible patterned ZnO nanowire/PEDOT:PSS LEDs array with very high light-emitting uniformity. A near band edge emission centered at 400 nm and a broad defect-related emission covering the range from 450 to 780 nm is observed in the electroluminescence spectra. Both anneal and H 2 O 2 treatment of the ZnO NWs and the optimal thickness of PEDOT:PSS can improve the performance of the as-fabricated Device. Furthermore, we demonstrate that the emission intensity of the ZnO nanowire/p-polymer LEDs can be enhanced by applying an external strain owing to the piezo-phototronic effect, which reduces the barrier height for hole transport, leads to an improved balance between electron contributed current and hole contributed current, owning to the piezoelectric charges on the ZnO side created by applying local strain. The simple fabrication process and excellent properties of the Device pave the way to cost-efficient LED technology for potential applications in high-resolution Optoelectronic Device, biomedical implanted Devices, artificial electronic skin and smart sensor systems.
Chao Xie - One of the best experts on this subject based on the ideXlab platform.
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recent advances in the fabrication of graphene zno heterojunctions for Optoelectronic Device applications
Journal of Materials Chemistry C, 2018Co-Authors: Fengxia Liang, Chao Xie, Yang Gao, Xiaowei Tong, Lin-bao LuoAbstract:Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric Devices that combine graphene and ZnO have exhibited excellent Device performances and attracted increasing research interest. However, although significant achievements have been made, many challenges still exist. In this review paper, we comprehensively summarize the recent advances in the fabrication of various graphene (also including reduced graphene oxide)–ZnO (e.g. ZnO films, nanowires, nanotubes, nanorods etc.) hybrid heterostructures, and their application in a number of Optoelectronic Devices, including photodiodes, phototransistors, solar cells, light emitting diodes (LEDs), lasers and so on. We start by briefly surveying the recent progress in the fabrication methodologies such as low-temperature and high-temperature methods. And then, we will elaborate on the Optoelectronic Device application in terms of Device physics, performance analysis, and Device optimization approaches. Finally, we close with some unresolved issues and challenges in this field.
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graphene semiconductor hybrid heterostructures for Optoelectronic Device applications
Nano Today, 2018Co-Authors: Chao Xie, Yi Wang, Zhi-xiang Zhang, Di Wang, Lin-bao LuoAbstract:Abstract As one of the most appealing two-dimensional materials, graphene (Gr) has attracted tremendous research interest in Optoelectronic Device applications for its plenty of exceptional electrical and optical properties. The emergence of Gr/semiconductor hybrid heterostructures provides a promising platform for assembling high-performance Optoelectronic Devices that can overcome intrinsic limitations of Gr. However, although significant achievements have been made, many challenges still exist. Here, we comprehensively review the progress in the development of various Optoelectronic Devices based on Gr/semiconductor hybrid heterostructures, including /group II-VI nanostructures, /group III-V semiconductors, /group IV semiconductors, /metal oxides and /other semiconductors, in terms of the Device design, Device performance and physics, processing techniques for performance optimization, etc. In the final section, conclusions of the existing techniques are presented and future challenges in Optoelectronic applications of Gr/semiconductor hybrid heterostructures are addressed.
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Graphene/Semiconductor Hybrid Heterostructures for Optoelectronic Device Applications
Nano Today, 2018Co-Authors: Chao Xie, Yi Wang, Zhi-xiang Zhang, Di Wang, Lin-bao LuoAbstract:Abstract As one of the most appealing two-dimensional materials, graphene (Gr) has attracted tremendous research interest in Optoelectronic Device applications for its plenty of exceptional electrical and optical properties. The emergence of Gr/semiconductor hybrid heterostructures provides a promising platform for assembling high-performance Optoelectronic Devices that can overcome intrinsic limitations of Gr. However, although significant achievements have been made, many challenges still exist. Here, we comprehensively review the progress in the development of various Optoelectronic Devices based on Gr/semiconductor hybrid heterostructures, including /group II-VI nanostructures, /group III-V semiconductors, /group IV semiconductors, /metal oxides and /other semiconductors, in terms of the Device design, Device performance and physics, processing techniques for performance optimization, etc. In the final section, conclusions of the existing techniques are presented and future challenges in Optoelectronic applications of Gr/semiconductor hybrid heterostructures are addressed.
Changsoon Choi - One of the best experts on this subject based on the ideXlab platform.
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human eye inspired soft Optoelectronic Device using high density mos2 graphene curved image sensor array
Nature Communications, 2017Co-Authors: Changsoon Choi, Changkyun Im, Moon Kee Choi, Ok Kyu Park, Seunghae Kwon, Noo Li Jeon, Young Min Song, Nanshu LuAbstract:Soft bioelectronic Devices provide new opportunities for next-generation implantable Devices owing to their soft mechanical nature that leads to minimal tissue damages and immune responses. However, a soft form of the implantable Optoelectronic Device for optical sensing and retinal stimulation has not been developed yet because of the bulkiness and rigidity of conventional imaging modules and their composing materials. Here, we describe a high-density and hemispherically curved image sensor array that leverages the atomically thin MoS2-graphene heterostructure and strain-releasing Device designs. The hemispherically curved image sensor array exhibits infrared blindness and successfully acquires pixelated optical signals. We corroborate the validity of the proposed soft materials and ultrathin Device designs through theoretical modeling and finite element analysis. Then, we propose the ultrathin hemispherically curved image sensor array as a promising imaging element in the soft retinal implant. The CurvIS array is applied as a human eye-inspired soft implantable Optoelectronic Device that can detect optical signals and apply programmed electrical stimulation to optic nerves with minimum mechanical side effects to the retina. Soft and flexible Optoelectronic Devices may provide effective routes toward retinal implants for enhanced visual functions. Here, the authors fabricate a curved array of flexible MoS2-graphene photodetectors and demonstrate its potential application as ophthalmic imaging element in mouse models.
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Human eye-inspired soft Optoelectronic Device using high-density MoS2-graphene curved image sensor array
Nature Communications, 2017Co-Authors: Changsoon Choi, Xiaoliang Qin, Gil Ju Lee, Jaemin Kim, Changkyun Im, Moon Kee Choi, Ok Kyu Park, Min Sung Kim, Siyi Liu, Kyoung Won ChoAbstract:Soft bioelectronic Devices provide new opportunities for next-generation implantable Devices owing to their soft mechanical nature that leads to minimal tissue damages and immune responses. However, a soft form of the implantable Optoelectronic Device for optical sensing and retinal stimulation has not been developed yet because of the bulkiness and rigidity of conventional imaging modules and their composing materials. Here, we describe a high-density and hemispherically curved image sensor array that leverages the atomically thin MoS2-graphene heterostructure and strain-releasing Device designs. The hemispherically curved image sensor array exhibits infrared blindness and successfully acquires pixelated optical signals. We corroborate the validity of the proposed soft materials and ultrathin Device designs through theoretical modeling and finite element analysis. Then, we propose the ultrathin hemispherically curved image sensor array as a promising imaging element in the soft retinal implant. The CurvIS array is applied as a human eye-inspired soft implantable Optoelectronic Device that can detect optical signals and apply programmed electrical stimulation to optic nerves with minimum mechanical side effects to the retina.
Chennupati Jagadish - One of the best experts on this subject based on the ideXlab platform.
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Special Issue: Optoelectronic Device Integration
IEEE Journal of Quantum Electronics, 2012Co-Authors: Chennupati Jagadish, P.d. Dapkus, Luke J. Mawst, Amr S. HelmyAbstract:This paper presents the life and works on Professor James J. Coleman and has made seminal contributions in the field of strained layer semiconductor lasers, high power lasers, selective area epitaxy for Optoelectronic Device integration, quantum well and dot lasers.
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iii v semiconductor nanowires for Optoelectronic Device applications
Progress in Quantum Electronics, 2011Co-Authors: Hannah J Joyce, J M Yarrisonrice, Chennupati Jagadish, L M Smith, Patrick Parkinson, Howard E. Jackson, Michael B JohnstonAbstract:Abstract Semiconductor nanowires have recently emerged as a new class of materials with significant potential to reveal new fundamental physics and to propel new applications in quantum electronic and Optoelectronic Devices. Semiconductor nanowires show exceptional promise as nanostructured materials for exploring physics in reduced dimensions and in complex geometries, as well as in one-dimensional nanowire Devices. They are compatible with existing semiconductor technologies and can be tailored into unique axial and radial heterostructures. In this contribution we review the recent efforts of our international collaboration which have resulted in significant advances in the growth of exceptionally high quality III–V nanowires and nanowire heterostructures, and major developments in understanding the electronic energy landscapes of these nanowires and the dynamics of carriers in these nanowires using photoluminescence, time-resolved photoluminescence and terahertz conductivity spectroscopy.
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III–V quantum dots for Optoelectronic Device applications
2009Co-Authors: Greg Jolley, Sudha Mokkapati, Abdul Majid, Hark Hoe Tan, Chennupati JagadishAbstract:Quantum dots (QDs) grown by Stranski-Kranstanov method are of current interest for the application of high performance Optoelectronic Devices due to their unique three dimensional carrier confinement. However, one big limitation for the QD-based Devices is the difficulties in predicting and controlling their operating wavelength accurately due to the extremely sensitive selforganized process of dot formation. In this talk, we will demonstrate the growth, fabrication and characterisation of two main Optoelectronic Devices, namely QD lasers and infrared photodetectors (QDIPs), by metal-organic chemical vapour deposition (MOCVD).
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Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications
COIN-ACOFT 2007 - Joint International Conference on the Optical Internet and the 32nd Australian Conference on Optical Fibre Technology, 2007Co-Authors: Chennupati JagadishAbstract:In this talk, main activities and progress in the areas of compound semiconductor quantum dots and nanowires, and Device integration in Semiconductor Optoelectronics and Nanotechnology Group at the Australian National University will be addressed.