The Experts below are selected from a list of 216963 Experts worldwide ranked by ideXlab platform
Chee Wei Wong - One of the best experts on this subject based on the ideXlab platform.
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regenerative oscillation and four wave mixing in graphene Optoelectronics
Nature Photonics, 2012Co-Authors: Tingyi Gu, Nicholas Petrone, Arend M Van Der Zande, James F. Mcmillan, Guoqiang Lo, Dim-lee Kwong, James Hone, Mingbin Yu, Chee Wei WongAbstract:Scientists report the observation of ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing in graphene–silicon hybrid optoelectronic devices at cavity recirculating energies of a few femtojoules. The findings indicate the feasibility and versatility of such devices for use in next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing.
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Regenerative oscillation and four-wave mixing in graphene Optoelectronics
Nature Photonics, 2012Co-Authors: Tingyi Gu, Nicholas Petrone, Arend M Van Der Zande, James F. Mcmillan, Dim-lee Kwong, James Hone, Mingbin Yu, G. Q. Lo, Chee Wei WongAbstract:The unique linear and massless band structure of graphene in a purely two-dimensional Dirac fermionic structure has led to intense research in fields ranging from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here, we report three consecutive first observations in graphene–silicon hybrid optoelectronic devices—ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing—all at few-femtojoule cavity recirculating energies. These observations, in comparison with control measurements on solely monolithic silicon cavities, are enabled only by the dramatically large and ultrafast χ ^(3) nonlinearities in graphene and the large Q / V ratios in wavelength-localized photonic crystal cavities. These third-order nonlinear results demonstrate the feasibility and versatility of hybrid two-dimensional graphene–silicon nanophotonic devices for next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing. Scientists report the observation of ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing in graphene–silicon hybrid optoelectronic devices at cavity recirculating energies of a few femtojoules. The findings indicate the feasibility and versatility of such devices for use in next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing.
Xiangfeng Duan - One of the best experts on this subject based on the ideXlab platform.
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van der waals epitaxial growth and Optoelectronics of large scale wse2 sns2 vertical bilayer p n junctions
Nature Communications, 2017Co-Authors: Tiefeng Yang, Biyuan Zheng, Zhaoyang Qi, Yexin Feng, Feng Miao, Weida Hu, Xuehong Zhang, Tao Xu, Zhen Wang, Xiangfeng DuanAbstract:High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance integrated Optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems. Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.
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Van der Waals heterostructures and devices
Nature Reviews Materials, 2016Co-Authors: Nathan O. Weiss, Hungchieh Cheng, Xidong Duan, Yu Huang, Xiangfeng DuanAbstract:With a dangling-bond-free surface, two dimensional layered materials (2DLMs) can enable the creation of diverse van der Waals heterostructures (vdWHs) without the conventional constraint of lattice matching or process compatibility. This Review discusses the recent advances in exploring 2DLM vdWHs for future electronics and Optoelectronics. Two-dimensional layered materials (2DLMs) have been a central focus of materials research since the discovery of graphene just over a decade ago. Each layer in 2DLMs consists of a covalently bonded, dangling-bond-free lattice and is weakly bound to neighbouring layers by van der Waals interactions. This makes it feasible to isolate, mix and match highly disparate atomic layers to create a wide range of van der Waals heterostructures (vdWHs) without the constraints of lattice matching and processing compatibility. Exploiting the novel properties in these vdWHs with diverse layering of metals, semiconductors or insulators, new designs of electronic devices emerge, including tunnelling transistors, barristors and flexible electronics, as well as optoelectronic devices, including photodetectors, photovoltaics and light-emitting devices with unprecedented characteristics or unique functionalities. We review the recent progress and challenges, and offer our perspective on the exploration of 2DLM-based vdWHs for future application in electronics and Optoelectronics.
Tingyi Gu - One of the best experts on this subject based on the ideXlab platform.
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regenerative oscillation and four wave mixing in graphene Optoelectronics
Nature Photonics, 2012Co-Authors: Tingyi Gu, Nicholas Petrone, Arend M Van Der Zande, James F. Mcmillan, Guoqiang Lo, Dim-lee Kwong, James Hone, Mingbin Yu, Chee Wei WongAbstract:Scientists report the observation of ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing in graphene–silicon hybrid optoelectronic devices at cavity recirculating energies of a few femtojoules. The findings indicate the feasibility and versatility of such devices for use in next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing.
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Regenerative oscillation and four-wave mixing in graphene Optoelectronics
Nature Photonics, 2012Co-Authors: Tingyi Gu, Nicholas Petrone, Arend M Van Der Zande, James F. Mcmillan, Dim-lee Kwong, James Hone, Mingbin Yu, G. Q. Lo, Chee Wei WongAbstract:The unique linear and massless band structure of graphene in a purely two-dimensional Dirac fermionic structure has led to intense research in fields ranging from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here, we report three consecutive first observations in graphene–silicon hybrid optoelectronic devices—ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing—all at few-femtojoule cavity recirculating energies. These observations, in comparison with control measurements on solely monolithic silicon cavities, are enabled only by the dramatically large and ultrafast χ ^(3) nonlinearities in graphene and the large Q / V ratios in wavelength-localized photonic crystal cavities. These third-order nonlinear results demonstrate the feasibility and versatility of hybrid two-dimensional graphene–silicon nanophotonic devices for next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing. Scientists report the observation of ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing in graphene–silicon hybrid optoelectronic devices at cavity recirculating energies of a few femtojoules. The findings indicate the feasibility and versatility of such devices for use in next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing.
James F. Mcmillan - One of the best experts on this subject based on the ideXlab platform.
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regenerative oscillation and four wave mixing in graphene Optoelectronics
Nature Photonics, 2012Co-Authors: Tingyi Gu, Nicholas Petrone, Arend M Van Der Zande, James F. Mcmillan, Guoqiang Lo, Dim-lee Kwong, James Hone, Mingbin Yu, Chee Wei WongAbstract:Scientists report the observation of ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing in graphene–silicon hybrid optoelectronic devices at cavity recirculating energies of a few femtojoules. The findings indicate the feasibility and versatility of such devices for use in next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing.
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Regenerative oscillation and four-wave mixing in graphene Optoelectronics
Nature Photonics, 2012Co-Authors: Tingyi Gu, Nicholas Petrone, Arend M Van Der Zande, James F. Mcmillan, Dim-lee Kwong, James Hone, Mingbin Yu, G. Q. Lo, Chee Wei WongAbstract:The unique linear and massless band structure of graphene in a purely two-dimensional Dirac fermionic structure has led to intense research in fields ranging from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here, we report three consecutive first observations in graphene–silicon hybrid optoelectronic devices—ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing—all at few-femtojoule cavity recirculating energies. These observations, in comparison with control measurements on solely monolithic silicon cavities, are enabled only by the dramatically large and ultrafast χ ^(3) nonlinearities in graphene and the large Q / V ratios in wavelength-localized photonic crystal cavities. These third-order nonlinear results demonstrate the feasibility and versatility of hybrid two-dimensional graphene–silicon nanophotonic devices for next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing. Scientists report the observation of ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing in graphene–silicon hybrid optoelectronic devices at cavity recirculating energies of a few femtojoules. The findings indicate the feasibility and versatility of such devices for use in next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing.
Arend M Van Der Zande - One of the best experts on this subject based on the ideXlab platform.
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regenerative oscillation and four wave mixing in graphene Optoelectronics
Nature Photonics, 2012Co-Authors: Tingyi Gu, Nicholas Petrone, Arend M Van Der Zande, James F. Mcmillan, Guoqiang Lo, Dim-lee Kwong, James Hone, Mingbin Yu, Chee Wei WongAbstract:Scientists report the observation of ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing in graphene–silicon hybrid optoelectronic devices at cavity recirculating energies of a few femtojoules. The findings indicate the feasibility and versatility of such devices for use in next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing.
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Regenerative oscillation and four-wave mixing in graphene Optoelectronics
Nature Photonics, 2012Co-Authors: Tingyi Gu, Nicholas Petrone, Arend M Van Der Zande, James F. Mcmillan, Dim-lee Kwong, James Hone, Mingbin Yu, G. Q. Lo, Chee Wei WongAbstract:The unique linear and massless band structure of graphene in a purely two-dimensional Dirac fermionic structure has led to intense research in fields ranging from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here, we report three consecutive first observations in graphene–silicon hybrid optoelectronic devices—ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing—all at few-femtojoule cavity recirculating energies. These observations, in comparison with control measurements on solely monolithic silicon cavities, are enabled only by the dramatically large and ultrafast χ ^(3) nonlinearities in graphene and the large Q / V ratios in wavelength-localized photonic crystal cavities. These third-order nonlinear results demonstrate the feasibility and versatility of hybrid two-dimensional graphene–silicon nanophotonic devices for next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing. Scientists report the observation of ultralow-power resonant optical bistability, self-induced regenerative oscillations and coherent four-wave mixing in graphene–silicon hybrid optoelectronic devices at cavity recirculating energies of a few femtojoules. The findings indicate the feasibility and versatility of such devices for use in next-generation chip-scale high-speed optical communications, radiofrequency Optoelectronics and all-optical signal processing.
