The Experts below are selected from a list of 3768 Experts worldwide ranked by ideXlab platform
Heng Xiao - One of the best experts on this subject based on the ideXlab platform.
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Spectrum analysis of nonlinear distortion of RF power amplifiers for wireless signals
International Conference on Communication Technology Proceedings 2003. ICCT 2003., 2003Co-Authors: Heng Xiao, Qiang Wu, Fu LiAbstract:One of the critical and costly components in digital cellular communication systems is the RF power amplifier. Theoretically, one of the main concerns in an RF power amplifier design is the nonlinear effect of the amplifier. Quantitatively, no explicit relationship or expression currently exists between the out-of-band emission level and the nonlinearity description related to the third-Order Intercept Point (IP/sub 3/). Further, in experiments and analysis, it was discovered that, in some situations, using IP/sub 3/ only is not accurate enough to describe the spectrum regrowth, especially when the fifth-Order Intercept Point (IP/sub 5/) is relatively high compared to the third-Order intermodulation. In this article, we analyze the nonlinear effect of an RF power amplifier in CDMA (IS-95 standard), TDMA (IS-54 standard) and Motorola iDEN system, give an expressions of the estimation of the out-of-band emission levels for each system expression by power spectrum respectively, in terms of the IP/sub 3/ and IP/sub 5/, as well as the power level of the signal. This result will be useful in the design of RF power amplifier for these wireless communication systems.
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Nonlinear distortion analysis of RF power amplifiers for wireless signals
6th International Conference on Signal Processing 2002., 2002Co-Authors: Heng Xiao, Qiang Wu, Fu LiAbstract:One of the critical and costly components in digital cellular communication systems is the RF power amplifier. Theoretically, one of the main concerns in an RF power amplifier design is the nonlinear effect of the amplifier. Quantitatively, no explicit relationship or expression currently exists between the out-of-band emission level and the nonlinearity description related to the third-Order Intercept Point (IP/sub 3/). Further, in experiments and analysis, it was discovered that, in some situations, using IP/sub 3/ only is not accurate enough to describe the spectrum regrowth, especially when the fifth-Order Intercept Point (IP/sub 5/) is relatively high compared to the third-Order intermodulation. We analyze the nonlinear effect of an RF power amplifier in CDMA (IS-95 Standard), TDMA (IS-54 Standard) and MIRS M-16-QAM (Motorola integrated radio system standard) systems, give expressions for the estimation of the out-of-band emission levels for each system expressed by power spectrum, in terms of the IP/sub 3/ and the IP/sub 5/, as well as the power level of the signal. This result may be useful in the design of RF power amplifiers for these wireless communication systems.
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Spectrum design of RF power amplifier for wireless communication systems
IEEE Transactions on Consumer Electronics, 2002Co-Authors: Heng Xiao, Qiang Wu, Fu LiAbstract:One of the critical and costly components in digital cellular communication systems is the RF power amplifier. Theoretically, one of the main concerns in an RF power amplifier design is the nonlinear effect of the amplifier. Quantitatively, no explicit relationship or expression currently exists between the out-of-band emission level and the nonlinearity description related to the third-Order Intercept Point (IP/sub 3/). Further, in experiments and analysis, it was discovered that, in some situations, using IP/sub 3/ only is not accurate enough to describe the spectrum regrowth, especially when the fifth-Order Intercept Point (IP/sub 5/) is relatively high compared to the third-Order intermodulation. In this article, we analyze the nonlinear effect of an RF power amplifier in CDMA (IS-95 standard), TDMA (IS-54 standard) and MIRS M-16-QAM (Motorola MIRS standard) system, give an expressions of the estimation of the out-of-band emission levels for each system expressed by power spectrum respectively, in terms of the IP/sub 3/ and the IP/sub 5/, as well as the power level of the signal. This result will be useful in the design of RF power amplifier for these wireless communication systems.
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Linear RF power amplifier design for MIRS M-16 QAM signals: a spectrum analysis approach
International Journal of Electronics, 2002Co-Authors: Chunming Liu, Heng XiaoAbstract:One of the critical and costly components in digital cellular communication systems is the RF power amplifier. Theoretically, one of the main concerns in an RF power amplifier design is the nonlinear effect of the amplifier. Quantitatively, so far, no explicit relationship or expression currently exists between the out-of-band emission level and the nonlinearity description related to the third-Order Intercept Point (IP 3). Further, in experiments and analysis, it was discovered that, in some situations, using IP 3 only is not accurate enough to describe the spectrum regrowth, especially when the fifth-Order Intercept Point (IP 5) is relatively significant compared to the third-Order intermodulation. In this article, we analyse the nonlinear effect of an RF power amplifier in the MIRS M-16 QAM system, give an expression for the estimation of the out-of-band emission levels for a MIRS M-16 QAM power spectrum in terms of the IP 3 and the IP 5 as well as the power level of the signal. This result will be use...
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ICASSP - Linear RF power amplifier design for MIRS M-16-QAM signals: A spectrum analysis approach
IEEE International Conference on Acoustics Speech and Signal Processing, 2002Co-Authors: Chunming Liu, Heng XiaoAbstract:One of the critical and costly components in digital cellular communication systems is the RF power amplifier. Theoretically, one of the main concerns in an RF power amplifier design is the nonlinear effect of the amplifier. Quantitatively, so far, no explicit relationship or expression currently exists between the out-of-band emission level and the nonlinearity description related to the third-Order Intercept Point (IP3). Further, in experiments and analysis, it was discovered that, in some situations, using IP3 only is not accurate enough to describe the spectrum regrowth, especially when the fifth-Order Intercept Point (IP5) is relatively significant compared to the third-Order intermodulation. In this article, we analyze the nonlinear effect of an RF power amplifier in the MIRS M-16-QAM system, give an expression of the estimation of the out-of-band emission levels for an MIRS signal power spectrum in terms of the IP3 and the IP5, as well as the power level of the signal. This result will be useful in the design of RF power amplifier for the MIRS M-16-QAM system and other wireless communication systems.
J C Campbell - One of the best experts on this subject based on the ideXlab platform.
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characterizing and modeling nonlinear intermodulation distortions in modified uni traveling carrier photodiodes
IEEE Journal of Quantum Electronics, 2011Co-Authors: Yang Fu, Andreas Beling, Zhi Li, J C CampbellAbstract:We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<;3 GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-Order Intercept Point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements.
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High-linearity monolithically integrated photodiodes and Wilkinson power combiner at 20 GHz
Photonics, 2010Co-Authors: Yang Fu, Chong Hu, J C CampbellAbstract:Photodiodes monolithically integrated with a Wilkinson power combiner have achieved over 50 dBm of third-Order Intercept Point (OIP3) at 20 GHz and 64 mA photocurrent level.
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Reduced frequency dependence of third Order nonlinearities in partially-depleted-absorber photodiodes
2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009Co-Authors: Andreas Beling, Hao Chen, J C CampbellAbstract:The third-Order Intercept Point (IP3) of an InGaAs/InP partially-depleted-absorber photodiode is characterized. The IP3 has a flat frequency response: a record IP3 of 39 dBm is achieved at 20 GHz.
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high power modified uni traveling carrier photodiode with 50 dbm third Order Intercept Point
International Microwave Symposium, 2008Co-Authors: Andreas Beling, Hao Chen, J C CampbellAbstract:The third-Order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third Order local Intercept Point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode’s 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent junction capacitance is used to analyze the frequency characteristics of the intermodulation distortions.
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High-power modified uni-traveling carrier photodiode with ≫ 50 dBm third Order Intercept Point
2008 IEEE MTT-S International Microwave Symposium Digest, 2008Co-Authors: Andreas Beling, Hao Chen, J C CampbellAbstract:The third-Order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third Order local Intercept Point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode’s 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent junction capacitance is used to analyze the frequency characteristics of the intermodulation distortions.
Andreas Beling - One of the best experts on this subject based on the ideXlab platform.
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High-Linearity V-Band InGaAs/InP Photodiodes Working at 1064 nm
Conference on Lasers and Electro-Optics, 2020Co-Authors: Yiwei Peng, Andreas Beling, Keye Sun, Yang Shen, Joe C. CampbellAbstract:We demonstrate the modified uni-travelling-carrier (MUTC) photodiodes achieving RF power levels of 21.7 dBm to 15 dBm in the frequency range of 39 GHz to 60 GHz, respectively, at 1064 nm wavelength. The photodiodes show good linearity with a third-Order Intercept Point (OIP3) up to 33 dBm at 40 GHz.
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InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation.
Optics express, 2013Co-Authors: Andreas Beling, A. Cross, Molly Piels, Jon D. Peters, Q. Zhou, John E. Bowers, Joe C. CampbellAbstract:High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third Order Intercept Point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA·GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.
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High-power flip-chip balanced photodetector with >40 GHz bandwidth
2013 IEEE Photonics Conference, 2013Co-Authors: Andreas Beling, A. Cross, Q. Zhou, Joe C. CampbellAbstract:A high-linearity balanced photodetector with a record-high RF output power of 16 dBm at 40 GHz is presented. The third Order Intercept Point at 15 GHz reaches 34 dBm. By operating one photodiode in the non-linear regime we observe partial cancelation of intermodulation distortions in common mode.
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characterizing and modeling nonlinear intermodulation distortions in modified uni traveling carrier photodiodes
IEEE Journal of Quantum Electronics, 2011Co-Authors: Yang Fu, Andreas Beling, Zhi Li, J C CampbellAbstract:We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<;3 GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-Order Intercept Point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements.
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Reduced frequency dependence of third Order nonlinearities in partially-depleted-absorber photodiodes
2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009Co-Authors: Andreas Beling, Hao Chen, J C CampbellAbstract:The third-Order Intercept Point (IP3) of an InGaAs/InP partially-depleted-absorber photodiode is characterized. The IP3 has a flat frequency response: a record IP3 of 39 dBm is achieved at 20 GHz.
Joe C. Campbell - One of the best experts on this subject based on the ideXlab platform.
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High-Linearity V-Band InGaAs/InP Photodiodes Working at 1064 nm
Conference on Lasers and Electro-Optics, 2020Co-Authors: Yiwei Peng, Andreas Beling, Keye Sun, Yang Shen, Joe C. CampbellAbstract:We demonstrate the modified uni-travelling-carrier (MUTC) photodiodes achieving RF power levels of 21.7 dBm to 15 dBm in the frequency range of 39 GHz to 60 GHz, respectively, at 1064 nm wavelength. The photodiodes show good linearity with a third-Order Intercept Point (OIP3) up to 33 dBm at 40 GHz.
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InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation.
Optics express, 2013Co-Authors: Andreas Beling, A. Cross, Molly Piels, Jon D. Peters, Q. Zhou, John E. Bowers, Joe C. CampbellAbstract:High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third Order Intercept Point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA·GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.
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High-power flip-chip balanced photodetector with >40 GHz bandwidth
2013 IEEE Photonics Conference, 2013Co-Authors: Andreas Beling, A. Cross, Q. Zhou, Joe C. CampbellAbstract:A high-linearity balanced photodetector with a record-high RF output power of 16 dBm at 40 GHz is presented. The third Order Intercept Point at 15 GHz reaches 34 dBm. By operating one photodiode in the non-linear regime we observe partial cancelation of intermodulation distortions in common mode.
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High linearity photodiode array with monolithically integrated Wilkinson power combiner
2010 IEEE International Topical Meeting on Microwave Photonics, 2010Co-Authors: Huapu Pan, Joe C. CampbellAbstract:We demonstrate the first high linearity four-element photodiode array with monolithically integrated Wilkinson power combiner. A high third-Order Intercept Point (OIP3) of 47 dBm is achieved at 20 GHz and 80 mA photocurrent level.
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High-Power High-Linearity Modified Uni-Traveling Carrier Photodiodes
Integrated Photonics and Nanophotonics Research and Applications, 2008Co-Authors: Andreas Beling, Hao Chen, Huapu Pan, Joe C. CampbellAbstract:We demonstrate a modified uni-traveling carrier photodiode (MUTC-PD) with a record-high third-Order Intercept Point of 52dBm at 75mA and 300MHz. To further enhance the dynamic range we propose a monolithically integrated traveling wave MUTC-PD array.
Paul K. L. Yu - One of the best experts on this subject based on the ideXlab platform.
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behaviors of the third Order Intercept Point for p i n waveguide photodiodes
Optics Express, 2009Co-Authors: M N Draa, D C Scott, W S C Chang, Jeffrey Bloch, Steven Bo Chen, Nong Chen, Paul K. L. YuAbstract:Waveguide PIN photodiodes with different absorber thicknesses and lengths were fabricated and characterized for linearity. Device A has a thicker absorber and shorter length, resulting in a bandwidth of 20GHz while device B reduces the absorber by half while maintaining the intrinsic layer thickness and almost doubles the length, resulting in a smaller optical overlap factor and a bandwidth of 10GHz. Device B shows a significant enhancement in OIP3 with a record high maximum value for a PIN waveguide photodiode of 42.4dBm at 28mA and -4V bias compared to device A which has a maximum OIP3 of 32.7dBm at 10mA and -4V bias. The increased linearity in device B is attributed to the reduction in optical overlap factor and increase in device length resulting in an easing of the front facet photocurrent density and overall device heating. The DC saturation Points are about 75mA and >160mA for device A and B at -2V bias.
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frequency behaviors of third Order Intercept Point for a waveguide photodiode using three laser two tone setup
Lasers and Electro-Optics Society Meeting, 2008Co-Authors: M N Draa, D C Scott, W S C Chang, Paul K. L. YuAbstract:A three laser two tone setup removes unwanted nonlinearities from the third Order Intercept Point (IP3) measurement. A high frequency photodetector with an IP3 upwards of 30 dBm will be analyzed up to 18 GHz using the new setup and with the circuit model used in Jiang (2000).
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the frequency behavior of the third Order Intercept Point in a waveguide photodiode
IEEE Photonics Technology Letters, 2000Co-Authors: Dongsoo Shin, D C Scott, Timothy A. Vang, G L Li, Paul K. L. YuAbstract:In Hayes's (1993) and Williams's (1996) analyses, the photodiode nonlinearity is attributed to the space charge screening effect. In this paper, the third-Order intermodulation distortions of a high frequency, large optical cavity p-i-n waveguide photodiode are characterized up to 18 GHz using a two-tone measurement. At high bias voltage, the third-Order Intercept Point (IP3) of the waveguide photodiode is constant at low frequency and /spl sim/f/sup -3/ at high frequency. This closely agrees with our model, which is based upon variation of the photodiode impedance. The measured IP3 of the same device at low bias voltages indicates the contribution of space charge screening under low bias voltage or severe saturation.
