The Experts below are selected from a list of 81912 Experts worldwide ranked by ideXlab platform
Hideo Hosono - One of the best experts on this subject based on the ideXlab platform.
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three dimensionally stacked flexible integrated circuit amorphous Oxide polymer hybrid complementary inverter using n type a in ga zn o and p type poly 9 9 dioctylfluorene co bithiophene thin film transistors
Applied Physics Letters, 2010Co-Authors: Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Mutsumi Kimura, Takashi Aoki, Kiyoshi Nakamura, Takashi Nakanishi, Takayuki Hasegawa, Takeo Kawase, Hideo HosonoAbstract:A three-dimensional vertically-stacked flexible integrated circuit is demonstrated based on hybrid complementary inverters made of n-type In–Ga–Zn–O (a-IGZO) amorphous Oxide thin-film transistors (TFTs) and p-type poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer TFTs, where all the fabrication processes were performed at temperatures ≤120 °C. Saturation mobilities of the a-IGZO TFT and the F8T2 TFT are ∼3.2 and ∼1.7×10−3 cm2 V−1 s−1, respectively, from which we chose the appropriate dimensions of the TFTs so as to obtain a good balance for the inverter operation. The maximum voltage gain is ∼67, which is better than those reported for Organic/Oxide hybrid complementary inverters.
Kenji Nomura - One of the best experts on this subject based on the ideXlab platform.
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three dimensionally stacked flexible integrated circuit amorphous Oxide polymer hybrid complementary inverter using n type a in ga zn o and p type poly 9 9 dioctylfluorene co bithiophene thin film transistors
Applied Physics Letters, 2010Co-Authors: Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Mutsumi Kimura, Takashi Aoki, Kiyoshi Nakamura, Takashi Nakanishi, Takayuki Hasegawa, Takeo Kawase, Hideo HosonoAbstract:A three-dimensional vertically-stacked flexible integrated circuit is demonstrated based on hybrid complementary inverters made of n-type In–Ga–Zn–O (a-IGZO) amorphous Oxide thin-film transistors (TFTs) and p-type poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer TFTs, where all the fabrication processes were performed at temperatures ≤120 °C. Saturation mobilities of the a-IGZO TFT and the F8T2 TFT are ∼3.2 and ∼1.7×10−3 cm2 V−1 s−1, respectively, from which we chose the appropriate dimensions of the TFTs so as to obtain a good balance for the inverter operation. The maximum voltage gain is ∼67, which is better than those reported for Organic/Oxide hybrid complementary inverters.
Masahiro Hirano - One of the best experts on this subject based on the ideXlab platform.
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three dimensionally stacked flexible integrated circuit amorphous Oxide polymer hybrid complementary inverter using n type a in ga zn o and p type poly 9 9 dioctylfluorene co bithiophene thin film transistors
Applied Physics Letters, 2010Co-Authors: Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Mutsumi Kimura, Takashi Aoki, Kiyoshi Nakamura, Takashi Nakanishi, Takayuki Hasegawa, Takeo Kawase, Hideo HosonoAbstract:A three-dimensional vertically-stacked flexible integrated circuit is demonstrated based on hybrid complementary inverters made of n-type In–Ga–Zn–O (a-IGZO) amorphous Oxide thin-film transistors (TFTs) and p-type poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer TFTs, where all the fabrication processes were performed at temperatures ≤120 °C. Saturation mobilities of the a-IGZO TFT and the F8T2 TFT are ∼3.2 and ∼1.7×10−3 cm2 V−1 s−1, respectively, from which we chose the appropriate dimensions of the TFTs so as to obtain a good balance for the inverter operation. The maximum voltage gain is ∼67, which is better than those reported for Organic/Oxide hybrid complementary inverters.
Mutsumi Kimura - One of the best experts on this subject based on the ideXlab platform.
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three dimensionally stacked flexible integrated circuit amorphous Oxide polymer hybrid complementary inverter using n type a in ga zn o and p type poly 9 9 dioctylfluorene co bithiophene thin film transistors
Applied Physics Letters, 2010Co-Authors: Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Mutsumi Kimura, Takashi Aoki, Kiyoshi Nakamura, Takashi Nakanishi, Takayuki Hasegawa, Takeo Kawase, Hideo HosonoAbstract:A three-dimensional vertically-stacked flexible integrated circuit is demonstrated based on hybrid complementary inverters made of n-type In–Ga–Zn–O (a-IGZO) amorphous Oxide thin-film transistors (TFTs) and p-type poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer TFTs, where all the fabrication processes were performed at temperatures ≤120 °C. Saturation mobilities of the a-IGZO TFT and the F8T2 TFT are ∼3.2 and ∼1.7×10−3 cm2 V−1 s−1, respectively, from which we chose the appropriate dimensions of the TFTs so as to obtain a good balance for the inverter operation. The maximum voltage gain is ∼67, which is better than those reported for Organic/Oxide hybrid complementary inverters.
Takashi Aoki - One of the best experts on this subject based on the ideXlab platform.
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three dimensionally stacked flexible integrated circuit amorphous Oxide polymer hybrid complementary inverter using n type a in ga zn o and p type poly 9 9 dioctylfluorene co bithiophene thin film transistors
Applied Physics Letters, 2010Co-Authors: Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Mutsumi Kimura, Takashi Aoki, Kiyoshi Nakamura, Takashi Nakanishi, Takayuki Hasegawa, Takeo Kawase, Hideo HosonoAbstract:A three-dimensional vertically-stacked flexible integrated circuit is demonstrated based on hybrid complementary inverters made of n-type In–Ga–Zn–O (a-IGZO) amorphous Oxide thin-film transistors (TFTs) and p-type poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer TFTs, where all the fabrication processes were performed at temperatures ≤120 °C. Saturation mobilities of the a-IGZO TFT and the F8T2 TFT are ∼3.2 and ∼1.7×10−3 cm2 V−1 s−1, respectively, from which we chose the appropriate dimensions of the TFTs so as to obtain a good balance for the inverter operation. The maximum voltage gain is ∼67, which is better than those reported for Organic/Oxide hybrid complementary inverters.