The Experts below are selected from a list of 2586 Experts worldwide ranked by ideXlab platform
C. Alibert - One of the best experts on this subject based on the ideXlab platform.
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low threshold high power room temperature continuous wave operation diode laser emitting at 2 26 spl mu m
IEEE Photonics Technology Letters, 2004Co-Authors: M. Garcia, A. Salhi, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, C. AlibertAbstract:Diode lasers emitting at 2.26 /spl mu/m, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm/sup 2/ for a 2-mm-long cavity. Output power up to 700 mW (/spl ap/550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 /spl mu/m/spl times/1 mm lasers. These devices have been coated with an antireflection on the Output Facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.
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Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
IEEE Photonics Technology Letters, 2004Co-Authors: M. Garcia, A. Salhi, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, C. AlibertAbstract:Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (≈550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm×1 mm lasers. These devices have been coated with an antireflection on the Output Facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.
Daniel M. Mittleman - One of the best experts on this subject based on the ideXlab platform.
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A terahertz band-pass resonator based on enhanced reflectivity using spoof surface plasmons
New Journal of Physics, 2013Co-Authors: Jingbo Liu, Rajind Mendis, Daniel M. MittlemanAbstract:We demonstrate a band-pass resonator in the terahertz (THz) range, based on a frequency-selective designer reflector. The resonator consists of a parallel-plate waveguide, a designed groove pattern cut into the Output Facet of each plate, and a reflecting mirror. The patterned Facet supports a spoof surface plasmon mode, which modifies the reflectivity at the waveguide Output Facet by interacting with the waveguide mode. By tuning the geometrical parameters of the groove pattern, the reflectivity at the patterned Output Facet can be increased up to ∼100% for a selected frequency. Broadband THz waves are quasi-optically coupled into this resonator and reflected multiple times from the patterned Facet. This leads to a narrowing of the spectrum at the selected frequency. The Q value of the resonator increases as the number of reflections on the patterned Facet increases, reaching ∼25 when the THz wave has experienced 12 reflections.
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Spoof surface plasmon enhanced reflection in THz parallel plate waveguides
International Photonics and Optoelectronics Meetings, 2012Co-Authors: Jingbo Liu, Rajind Mendis, Daniel M. MittlemanAbstract:Back reflections from the end of a parallel-plate metal waveguide can be enhanced up to 99% at a selected frequency by patterning the Output Facet. This concept can be used to design resonant waveguide structures.
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Spoof surface plasmon enhanced reflection in THz parallel plate waveguides
2012 37th International Conference on Infrared Millimeter and Terahertz Waves, 2012Co-Authors: Jingbo Liu, Rajind Mendis, Daniel M. MittlemanAbstract:Back reflection from the end of a parallel-plate metal waveguide (PPWG) can be enhanced up to 99% at a selected frequency by patterning on the Output Facet. The enhanced reflectivity depends on the incident angle in the PPWG and shows a lateral shift comparing to mirror reflection, which is an analogue of the Goos-Hanchen effect in this context. We show how this concept can be used as the basis for designing resonant waveguide structures.
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Superprism effect in a metal-clad terahertz photonic crystal slab.
Optics letters, 2007Co-Authors: Tushar Prasad, Vicki L. Colvin, Zhongping Jian, Daniel M. MittlemanAbstract:We report an experimental demonstration of the superprism effect in a photonic crystal slab at terahertz frequencies. For a 10% frequency variation around 0.28 THz, the refraction angle at the Output Facet of a wedge-shaped photonic crystal varies by about 15°. A comparison with the predictions of a band structure calculation demonstrates that a three-dimensional treatment, accurately modeling the finite slab thickness and the metallic boundary conditions, is required for even a qualitative agreement with the experimental observations.
M. Garcia - One of the best experts on this subject based on the ideXlab platform.
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low threshold high power room temperature continuous wave operation diode laser emitting at 2 26 spl mu m
IEEE Photonics Technology Letters, 2004Co-Authors: M. Garcia, A. Salhi, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, C. AlibertAbstract:Diode lasers emitting at 2.26 /spl mu/m, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm/sup 2/ for a 2-mm-long cavity. Output power up to 700 mW (/spl ap/550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 /spl mu/m/spl times/1 mm lasers. These devices have been coated with an antireflection on the Output Facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.
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Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
IEEE Photonics Technology Letters, 2004Co-Authors: M. Garcia, A. Salhi, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, C. AlibertAbstract:Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (≈550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm×1 mm lasers. These devices have been coated with an antireflection on the Output Facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.
A. Pérona - One of the best experts on this subject based on the ideXlab platform.
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low threshold high power room temperature continuous wave operation diode laser emitting at 2 26 spl mu m
IEEE Photonics Technology Letters, 2004Co-Authors: M. Garcia, A. Salhi, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, C. AlibertAbstract:Diode lasers emitting at 2.26 /spl mu/m, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm/sup 2/ for a 2-mm-long cavity. Output power up to 700 mW (/spl ap/550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 /spl mu/m/spl times/1 mm lasers. These devices have been coated with an antireflection on the Output Facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.
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Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
IEEE Photonics Technology Letters, 2004Co-Authors: M. Garcia, A. Salhi, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, C. AlibertAbstract:Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (≈550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm×1 mm lasers. These devices have been coated with an antireflection on the Output Facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.
Y. Rouillard - One of the best experts on this subject based on the ideXlab platform.
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low threshold high power room temperature continuous wave operation diode laser emitting at 2 26 spl mu m
IEEE Photonics Technology Letters, 2004Co-Authors: M. Garcia, A. Salhi, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, C. AlibertAbstract:Diode lasers emitting at 2.26 /spl mu/m, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm/sup 2/ for a 2-mm-long cavity. Output power up to 700 mW (/spl ap/550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 /spl mu/m/spl times/1 mm lasers. These devices have been coated with an antireflection on the Output Facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.
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Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
IEEE Photonics Technology Letters, 2004Co-Authors: M. Garcia, A. Salhi, A. Pérona, Y. Rouillard, C. Sirtori, X. Marcadet, C. AlibertAbstract:Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (≈550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm×1 mm lasers. These devices have been coated with an antireflection on the Output Facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.
