The Experts below are selected from a list of 8301 Experts worldwide ranked by ideXlab platform
Benjamin J. Blalock - One of the best experts on this subject based on the ideXlab platform.
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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
IEEE Transactions on Industrial Electronics, 2014Co-Authors: Zhiqiang Wang, Xiaojie Shi, Yang Xue, Laren M. Tolbert, Fei Wang, Benjamin J. BlalockAbstract:Overcurrent Protection of silicon carbide (SiC) MOSFETs remains a challenge due to lack of practical knowledge. This paper presents three Overcurrent Protection methods to improve the reliability and overall cost of SiC MOSFET based converters. First, a solid state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the DC bus to detect and clear Overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under Overcurrent faults is implemented as well. Third, a novel active Overcurrent Protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the Protection methods are described and analyzed in detail. A phase-leg configuration based step-down converter is built to evaluate the performance of the Protection schemes under various conditions, considering variation of fault type, decoupling capacitance, Protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature dependent characteristics, and applications to help designers select a proper Protection method.
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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
Ieee Transactions on Industrial Electronics, 2014Co-Authors: Z.-q. Wang, X. J. Shi, Yuncan Xue, Laren M. Tolbert, Fei Wang, Benjamin J. BlalockAbstract:Overcurrent Protection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper presents three Overcurrent Protection methods to improve the reliability and overall cost of SiC MOSFET-based converters. First, a solid-state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the dc bus to detect and clear Overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under Overcurrent faults is implemented as well. Third, a novel active Overcurrent Protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the Protection methods are described and analyzed in detail. A phase-leg configuration-based step-down converter is built to evaluate the performance of the Protection schemes under various conditions, considering variation of fault type, decoupling capacitance, Protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper Protection method.
Laren M. Tolbert - One of the best experts on this subject based on the ideXlab platform.
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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
IEEE Transactions on Industrial Electronics, 2014Co-Authors: Zhiqiang Wang, Xiaojie Shi, Yang Xue, Laren M. Tolbert, Fei Wang, Benjamin J. BlalockAbstract:Overcurrent Protection of silicon carbide (SiC) MOSFETs remains a challenge due to lack of practical knowledge. This paper presents three Overcurrent Protection methods to improve the reliability and overall cost of SiC MOSFET based converters. First, a solid state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the DC bus to detect and clear Overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under Overcurrent faults is implemented as well. Third, a novel active Overcurrent Protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the Protection methods are described and analyzed in detail. A phase-leg configuration based step-down converter is built to evaluate the performance of the Protection schemes under various conditions, considering variation of fault type, decoupling capacitance, Protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature dependent characteristics, and applications to help designers select a proper Protection method.
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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
Ieee Transactions on Industrial Electronics, 2014Co-Authors: Z.-q. Wang, X. J. Shi, Yuncan Xue, Laren M. Tolbert, Fei Wang, Benjamin J. BlalockAbstract:Overcurrent Protection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper presents three Overcurrent Protection methods to improve the reliability and overall cost of SiC MOSFET-based converters. First, a solid-state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the dc bus to detect and clear Overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under Overcurrent faults is implemented as well. Third, a novel active Overcurrent Protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the Protection methods are described and analyzed in detail. A phase-leg configuration-based step-down converter is built to evaluate the performance of the Protection schemes under various conditions, considering variation of fault type, decoupling capacitance, Protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper Protection method.
Fei Wang - One of the best experts on this subject based on the ideXlab platform.
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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
IEEE Transactions on Industrial Electronics, 2014Co-Authors: Zhiqiang Wang, Xiaojie Shi, Yang Xue, Laren M. Tolbert, Fei Wang, Benjamin J. BlalockAbstract:Overcurrent Protection of silicon carbide (SiC) MOSFETs remains a challenge due to lack of practical knowledge. This paper presents three Overcurrent Protection methods to improve the reliability and overall cost of SiC MOSFET based converters. First, a solid state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the DC bus to detect and clear Overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under Overcurrent faults is implemented as well. Third, a novel active Overcurrent Protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the Protection methods are described and analyzed in detail. A phase-leg configuration based step-down converter is built to evaluate the performance of the Protection schemes under various conditions, considering variation of fault type, decoupling capacitance, Protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature dependent characteristics, and applications to help designers select a proper Protection method.
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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
Ieee Transactions on Industrial Electronics, 2014Co-Authors: Z.-q. Wang, X. J. Shi, Yuncan Xue, Laren M. Tolbert, Fei Wang, Benjamin J. BlalockAbstract:Overcurrent Protection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper presents three Overcurrent Protection methods to improve the reliability and overall cost of SiC MOSFET-based converters. First, a solid-state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the dc bus to detect and clear Overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under Overcurrent faults is implemented as well. Third, a novel active Overcurrent Protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the Protection methods are described and analyzed in detail. A phase-leg configuration-based step-down converter is built to evaluate the performance of the Protection schemes under various conditions, considering variation of fault type, decoupling capacitance, Protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper Protection method.
Zhiqiang Wang - One of the best experts on this subject based on the ideXlab platform.
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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
IEEE Transactions on Industrial Electronics, 2014Co-Authors: Zhiqiang Wang, Xiaojie Shi, Yang Xue, Laren M. Tolbert, Fei Wang, Benjamin J. BlalockAbstract:Overcurrent Protection of silicon carbide (SiC) MOSFETs remains a challenge due to lack of practical knowledge. This paper presents three Overcurrent Protection methods to improve the reliability and overall cost of SiC MOSFET based converters. First, a solid state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the DC bus to detect and clear Overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under Overcurrent faults is implemented as well. Third, a novel active Overcurrent Protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the Protection methods are described and analyzed in detail. A phase-leg configuration based step-down converter is built to evaluate the performance of the Protection schemes under various conditions, considering variation of fault type, decoupling capacitance, Protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature dependent characteristics, and applications to help designers select a proper Protection method.
Z.-q. Wang - One of the best experts on this subject based on the ideXlab platform.
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Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
Ieee Transactions on Industrial Electronics, 2014Co-Authors: Z.-q. Wang, X. J. Shi, Yuncan Xue, Laren M. Tolbert, Fei Wang, Benjamin J. BlalockAbstract:Overcurrent Protection of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper presents three Overcurrent Protection methods to improve the reliability and overall cost of SiC MOSFET-based converters. First, a solid-state circuit breaker (SSCB) composed primarily by a Si IGBT and a commercial gate driver IC is connected in series with the dc bus to detect and clear Overcurrent faults. Second, the desaturation technique using a sensing diode to detect the drain-source voltage under Overcurrent faults is implemented as well. Third, a novel active Overcurrent Protection scheme through dynamic evaluation of fault current level is proposed. The design considerations and potential issues of the Protection methods are described and analyzed in detail. A phase-leg configuration-based step-down converter is built to evaluate the performance of the Protection schemes under various conditions, considering variation of fault type, decoupling capacitance, Protection circuit parameters, etc. Finally, a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper Protection method.
