The Experts below are selected from a list of 75 Experts worldwide ranked by ideXlab platform
Sumio Kobayashi - One of the best experts on this subject based on the ideXlab platform.
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Some unsolved problems on Czochralski growth of silicon from the viewpoint of materials modeling
Journal of Computer-Aided Materials Design, 1996Co-Authors: Sumio KobayashiAbstract:In this report the Oxidation-Induced Stacking Fault ring in Czochralski-grown Si, which is not fully understood in spite of the practical importance, is discussed, as well as the necessity of materials modeling to understand it.
E. Dornberger - One of the best experts on this subject based on the ideXlab platform.
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BORON RETARDED SELF-INTERSTITIAL DIFFUSION IN CZOCHRALSKI GROWTH OF SILICON CRYSTALS AND ITS ROLE IN Oxidation-Induced Stacking-Fault RING DYNAMICS
Applied Physics Letters, 1999Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, Hendi Susanto, E. DornbergerAbstract:The effect of boron doping on the position of the Oxidation-Induced Stacking-Fault ring (OSF ring) during Czochralski (CZ) crystal growth is described using a comprehensive model for point defect dynamics including the role of boron. The important interactions between boron atoms and intrinsic point defects are selected on the basis of tight-binding estimates for the energies of formation for boron-point defect structures. Intrinsic point defect properties used are taken from a parameterized model of point defect dynamics for predicting OSF-ring dynamics. Entropies of formation for boron-point defect species are obtained by fitting the predictions of the model to experimental data for OSF-ring dynamics. The model successfully predicts OSF-ring dynamics for a variety of doping and growth conditions. The effect of boron on the OSF ring is caused by the retardation of point defect recombination at temperatures near the melting point caused by dynamic storage of self-interstitials in complexes with boron.
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Point Defect Dynamics and the Oxidation‐Induced Stacking‐Fault Ring in Czochralski‐Grown Silicon Crystals
Journal of The Electrochemical Society, 1998Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, E. DornbergerAbstract:A model is presented and analyzed for the dynamics of intrinsic point defects, vacancies, and self-interstitials, in single-crystal silicon. Computations and asymptotic analysis are used to describe the appearance of the Oxidation-Induced Stacking-Fault ring (OSF ring) created during the cooling of silicon crystals in the Czochralski growth process. The model predicts that the OSF ring separates an inner region supersaturated with vacancies from a self-interstitial rich outer region. The OSF ring corresponds to a region of no net excess of either point defect. Simulations of the dynamics of the OSF ring with changes in the crystal growth rate (V) and the axial temperature gradient at the melt/crystal interface (G) accurately predict experimental data for a wide range of growth conditions when point defect thermophysical properties (equilibrium concentrations and diffusivities) are fit to a single set of experimental data. The point defect properties determined this way are within the range of values reported in the literature. Asymptotic analysis of the point defect dynamics model gives a simple mechanistic picture for the development of the point defect supersaturations and yields a closed-form expression for the critical value of (V/G) for the location of the OSF ring. This expression is in excellent agreement with the predictions of simulation and with the empirical correlation determined from experiments.
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Influence of boron concentration on the Oxidation-Induced Stacking Fault ring in Czochralski silicon crystals
Journal of Crystal Growth, 1997Co-Authors: E. Dornberger, D. Gräf, M. Suhren, U. Lambert, P. Wagner, F. Dupret, Wilfried Von AmmonAbstract:The influence of the boron doping level in the range of 1 x 10(15)-2 x 10(19) cm(-3) on the position of the Oxidation-Induced Stacking Fault ring (R-OSF) in silicon crystals has been investigated by experiments and numerical simulation. For low boron-doped crystals, the position of the R-OSF is described by a critical value C-crit defined by the ratio of the pull rate and the temperature gradient in the crystal at the solid/liquid interface. Boron concentrations higher-than 10(17) cm(-3) shift the position of the R-OSF towards the wafer center without change of growth parameters. The critical value C-crit converts into a function C-crit(C-B), depending linearly on the boron concentration C-B. Crystal-originated particles (COP) and gate oxide integrity (GOI) yield distributions which are consistent with the R-OSF pattern. A low COP density and a high GOI yield are observed outside the ring; a high COP density and a medium GOI yield in the inner region bordered by the ring. It is assumed that boron atoms modify the thermodynamical properties of vacancies and self-interstitials
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On the dynamics of the Oxidation-Induced Stacking-Fault ring in as-grown Czochralski silicon crystals
Applied Physics Letters, 1997Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, E. DornbergerAbstract:The behavior of the Oxidation-Induced Stacking-Fault ring (OSF ring) in Czochralski (CZ)-grown silicon crystals is predicted based on the dynamics of point defects during growth. Preexponential constants for the equilibrium point defect concentrations and diffusivities are determined by fitting the predictions of the model to a single set of experimental data for OSF-ring dynamics. Other experimental data is well fit by this model. Moreover, point defect properties used are consistent with other estimates. Asymptotic analysis of the point defect model leads to a closed-form expression for the dependence of the OSF-ring location on processing conditions and thermophysical properties of point defects at the melting temperature. These results indicate that differentiation between defect types in CZ-grown material can be done entirely on the basis of point defect dynamics.
Talid Sinno - One of the best experts on this subject based on the ideXlab platform.
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BORON RETARDED SELF-INTERSTITIAL DIFFUSION IN CZOCHRALSKI GROWTH OF SILICON CRYSTALS AND ITS ROLE IN Oxidation-Induced Stacking-Fault RING DYNAMICS
Applied Physics Letters, 1999Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, Hendi Susanto, E. DornbergerAbstract:The effect of boron doping on the position of the Oxidation-Induced Stacking-Fault ring (OSF ring) during Czochralski (CZ) crystal growth is described using a comprehensive model for point defect dynamics including the role of boron. The important interactions between boron atoms and intrinsic point defects are selected on the basis of tight-binding estimates for the energies of formation for boron-point defect structures. Intrinsic point defect properties used are taken from a parameterized model of point defect dynamics for predicting OSF-ring dynamics. Entropies of formation for boron-point defect species are obtained by fitting the predictions of the model to experimental data for OSF-ring dynamics. The model successfully predicts OSF-ring dynamics for a variety of doping and growth conditions. The effect of boron on the OSF ring is caused by the retardation of point defect recombination at temperatures near the melting point caused by dynamic storage of self-interstitials in complexes with boron.
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Point Defect Dynamics and the Oxidation‐Induced Stacking‐Fault Ring in Czochralski‐Grown Silicon Crystals
Journal of The Electrochemical Society, 1998Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, E. DornbergerAbstract:A model is presented and analyzed for the dynamics of intrinsic point defects, vacancies, and self-interstitials, in single-crystal silicon. Computations and asymptotic analysis are used to describe the appearance of the Oxidation-Induced Stacking-Fault ring (OSF ring) created during the cooling of silicon crystals in the Czochralski growth process. The model predicts that the OSF ring separates an inner region supersaturated with vacancies from a self-interstitial rich outer region. The OSF ring corresponds to a region of no net excess of either point defect. Simulations of the dynamics of the OSF ring with changes in the crystal growth rate (V) and the axial temperature gradient at the melt/crystal interface (G) accurately predict experimental data for a wide range of growth conditions when point defect thermophysical properties (equilibrium concentrations and diffusivities) are fit to a single set of experimental data. The point defect properties determined this way are within the range of values reported in the literature. Asymptotic analysis of the point defect dynamics model gives a simple mechanistic picture for the development of the point defect supersaturations and yields a closed-form expression for the critical value of (V/G) for the location of the OSF ring. This expression is in excellent agreement with the predictions of simulation and with the empirical correlation determined from experiments.
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On the dynamics of the Oxidation-Induced Stacking-Fault ring in as-grown Czochralski silicon crystals
Applied Physics Letters, 1997Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, E. DornbergerAbstract:The behavior of the Oxidation-Induced Stacking-Fault ring (OSF ring) in Czochralski (CZ)-grown silicon crystals is predicted based on the dynamics of point defects during growth. Preexponential constants for the equilibrium point defect concentrations and diffusivities are determined by fitting the predictions of the model to a single set of experimental data for OSF-ring dynamics. Other experimental data is well fit by this model. Moreover, point defect properties used are consistent with other estimates. Asymptotic analysis of the point defect model leads to a closed-form expression for the dependence of the OSF-ring location on processing conditions and thermophysical properties of point defects at the melting temperature. These results indicate that differentiation between defect types in CZ-grown material can be done entirely on the basis of point defect dynamics.
Wilfried Von Ammon - One of the best experts on this subject based on the ideXlab platform.
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BORON RETARDED SELF-INTERSTITIAL DIFFUSION IN CZOCHRALSKI GROWTH OF SILICON CRYSTALS AND ITS ROLE IN Oxidation-Induced Stacking-Fault RING DYNAMICS
Applied Physics Letters, 1999Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, Hendi Susanto, E. DornbergerAbstract:The effect of boron doping on the position of the Oxidation-Induced Stacking-Fault ring (OSF ring) during Czochralski (CZ) crystal growth is described using a comprehensive model for point defect dynamics including the role of boron. The important interactions between boron atoms and intrinsic point defects are selected on the basis of tight-binding estimates for the energies of formation for boron-point defect structures. Intrinsic point defect properties used are taken from a parameterized model of point defect dynamics for predicting OSF-ring dynamics. Entropies of formation for boron-point defect species are obtained by fitting the predictions of the model to experimental data for OSF-ring dynamics. The model successfully predicts OSF-ring dynamics for a variety of doping and growth conditions. The effect of boron on the OSF ring is caused by the retardation of point defect recombination at temperatures near the melting point caused by dynamic storage of self-interstitials in complexes with boron.
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Point Defect Dynamics and the Oxidation‐Induced Stacking‐Fault Ring in Czochralski‐Grown Silicon Crystals
Journal of The Electrochemical Society, 1998Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, E. DornbergerAbstract:A model is presented and analyzed for the dynamics of intrinsic point defects, vacancies, and self-interstitials, in single-crystal silicon. Computations and asymptotic analysis are used to describe the appearance of the Oxidation-Induced Stacking-Fault ring (OSF ring) created during the cooling of silicon crystals in the Czochralski growth process. The model predicts that the OSF ring separates an inner region supersaturated with vacancies from a self-interstitial rich outer region. The OSF ring corresponds to a region of no net excess of either point defect. Simulations of the dynamics of the OSF ring with changes in the crystal growth rate (V) and the axial temperature gradient at the melt/crystal interface (G) accurately predict experimental data for a wide range of growth conditions when point defect thermophysical properties (equilibrium concentrations and diffusivities) are fit to a single set of experimental data. The point defect properties determined this way are within the range of values reported in the literature. Asymptotic analysis of the point defect dynamics model gives a simple mechanistic picture for the development of the point defect supersaturations and yields a closed-form expression for the critical value of (V/G) for the location of the OSF ring. This expression is in excellent agreement with the predictions of simulation and with the empirical correlation determined from experiments.
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Influence of boron concentration on the Oxidation-Induced Stacking Fault ring in Czochralski silicon crystals
Journal of Crystal Growth, 1997Co-Authors: E. Dornberger, D. Gräf, M. Suhren, U. Lambert, P. Wagner, F. Dupret, Wilfried Von AmmonAbstract:The influence of the boron doping level in the range of 1 x 10(15)-2 x 10(19) cm(-3) on the position of the Oxidation-Induced Stacking Fault ring (R-OSF) in silicon crystals has been investigated by experiments and numerical simulation. For low boron-doped crystals, the position of the R-OSF is described by a critical value C-crit defined by the ratio of the pull rate and the temperature gradient in the crystal at the solid/liquid interface. Boron concentrations higher-than 10(17) cm(-3) shift the position of the R-OSF towards the wafer center without change of growth parameters. The critical value C-crit converts into a function C-crit(C-B), depending linearly on the boron concentration C-B. Crystal-originated particles (COP) and gate oxide integrity (GOI) yield distributions which are consistent with the R-OSF pattern. A low COP density and a high GOI yield are observed outside the ring; a high COP density and a medium GOI yield in the inner region bordered by the ring. It is assumed that boron atoms modify the thermodynamical properties of vacancies and self-interstitials
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On the dynamics of the Oxidation-Induced Stacking-Fault ring in as-grown Czochralski silicon crystals
Applied Physics Letters, 1997Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, E. DornbergerAbstract:The behavior of the Oxidation-Induced Stacking-Fault ring (OSF ring) in Czochralski (CZ)-grown silicon crystals is predicted based on the dynamics of point defects during growth. Preexponential constants for the equilibrium point defect concentrations and diffusivities are determined by fitting the predictions of the model to a single set of experimental data for OSF-ring dynamics. Other experimental data is well fit by this model. Moreover, point defect properties used are consistent with other estimates. Asymptotic analysis of the point defect model leads to a closed-form expression for the dependence of the OSF-ring location on processing conditions and thermophysical properties of point defects at the melting temperature. These results indicate that differentiation between defect types in CZ-grown material can be done entirely on the basis of point defect dynamics.
Robert A. Brown - One of the best experts on this subject based on the ideXlab platform.
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BORON RETARDED SELF-INTERSTITIAL DIFFUSION IN CZOCHRALSKI GROWTH OF SILICON CRYSTALS AND ITS ROLE IN Oxidation-Induced Stacking-Fault RING DYNAMICS
Applied Physics Letters, 1999Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, Hendi Susanto, E. DornbergerAbstract:The effect of boron doping on the position of the Oxidation-Induced Stacking-Fault ring (OSF ring) during Czochralski (CZ) crystal growth is described using a comprehensive model for point defect dynamics including the role of boron. The important interactions between boron atoms and intrinsic point defects are selected on the basis of tight-binding estimates for the energies of formation for boron-point defect structures. Intrinsic point defect properties used are taken from a parameterized model of point defect dynamics for predicting OSF-ring dynamics. Entropies of formation for boron-point defect species are obtained by fitting the predictions of the model to experimental data for OSF-ring dynamics. The model successfully predicts OSF-ring dynamics for a variety of doping and growth conditions. The effect of boron on the OSF ring is caused by the retardation of point defect recombination at temperatures near the melting point caused by dynamic storage of self-interstitials in complexes with boron.
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Point Defect Dynamics and the Oxidation‐Induced Stacking‐Fault Ring in Czochralski‐Grown Silicon Crystals
Journal of The Electrochemical Society, 1998Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, E. DornbergerAbstract:A model is presented and analyzed for the dynamics of intrinsic point defects, vacancies, and self-interstitials, in single-crystal silicon. Computations and asymptotic analysis are used to describe the appearance of the Oxidation-Induced Stacking-Fault ring (OSF ring) created during the cooling of silicon crystals in the Czochralski growth process. The model predicts that the OSF ring separates an inner region supersaturated with vacancies from a self-interstitial rich outer region. The OSF ring corresponds to a region of no net excess of either point defect. Simulations of the dynamics of the OSF ring with changes in the crystal growth rate (V) and the axial temperature gradient at the melt/crystal interface (G) accurately predict experimental data for a wide range of growth conditions when point defect thermophysical properties (equilibrium concentrations and diffusivities) are fit to a single set of experimental data. The point defect properties determined this way are within the range of values reported in the literature. Asymptotic analysis of the point defect dynamics model gives a simple mechanistic picture for the development of the point defect supersaturations and yields a closed-form expression for the critical value of (V/G) for the location of the OSF ring. This expression is in excellent agreement with the predictions of simulation and with the empirical correlation determined from experiments.
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On the dynamics of the Oxidation-Induced Stacking-Fault ring in as-grown Czochralski silicon crystals
Applied Physics Letters, 1997Co-Authors: Talid Sinno, Robert A. Brown, Wilfried Von Ammon, E. DornbergerAbstract:The behavior of the Oxidation-Induced Stacking-Fault ring (OSF ring) in Czochralski (CZ)-grown silicon crystals is predicted based on the dynamics of point defects during growth. Preexponential constants for the equilibrium point defect concentrations and diffusivities are determined by fitting the predictions of the model to a single set of experimental data for OSF-ring dynamics. Other experimental data is well fit by this model. Moreover, point defect properties used are consistent with other estimates. Asymptotic analysis of the point defect model leads to a closed-form expression for the dependence of the OSF-ring location on processing conditions and thermophysical properties of point defects at the melting temperature. These results indicate that differentiation between defect types in CZ-grown material can be done entirely on the basis of point defect dynamics.
