Oxygen Ions

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Jeong Won Kim - One of the best experts on this subject based on the ideXlab platform.

Yuichi Shimakawa - One of the best experts on this subject based on the ideXlab platform.

Hu Young Jeong - One of the best experts on this subject based on the ideXlab platform.

Min Kyu Yang - One of the best experts on this subject based on the ideXlab platform.

  • bipolar resistive switching behavior in ti mno2 pt structure for nonvolatile memory devices
    Applied Physics Letters, 2009
    Co-Authors: Min Kyu Yang, Jaewan Park, Jeon Kook Lee
    Abstract:

    This study examined the electrical properties of Ti/MnO2/Pt devices with stable and reproducible bipolar resistive switching behavior. The dependency of the memory behavior on the cell area and operating temperature suggest that the conducting mechanism in the low resistance states is due to the locally conducting filaments formed. X-ray photoelectron spectroscopy showed that nonlattice Oxygen Ions form at the MnO2 surface. The mechanism of resistance switching in the system examined involves the generation and recovery of Oxygen vacancies with the nonlattice Oxygen Ions.

Sungyool Choi - One of the best experts on this subject based on the ideXlab platform.