The Experts below are selected from a list of 21972 Experts worldwide ranked by ideXlab platform
Deborah D.l. Chung - One of the best experts on this subject based on the ideXlab platform.
-
Ozone Treatment of carbon fiber for reinforcing cement
Carbon, 1998Co-Authors: Xuli Fu, Weiming Lu, Deborah D.l. ChungAbstract:Abstract Ozone Treatment of isotropic-pitch-based carbon fiber was found to increase the surface oxygen concentration and change surface oxygen from C–O to CO, thereby causing the contact angle between fiber and water to be decreased to zero. Thus, the bond strength between fiber and cement paste was increased and the tensile strength, modulus and ductility of carbon fiber reinforced cement paste were increased. Moreover, the degree of dispersion of fibers in mortar was increased and the effectiveness of the fibers for reducing the drying shrinkage was improved. As a consequence, the strain sensing ability of carbon fiber reinforced mortar was improved in terms of increased gage factor and better repeatability. The Ozone Treatment did not affect the morphology, tensile strength or volume electrical resistivity of the fiber itself.
-
Improving the tensile properties of carbon fiber reinforced cement by Ozone Treatment of the fiber
Cement and Concrete Research, 1996Co-Authors: Deborah D.l. ChungAbstract:The tensile strength, modulus and ductility of carbon fiber reinforced cement paste were increased by Ozone Treatment of the fibers prior to using the fibers. Increases were observed whether or not the paste contained methylcellulose/silica fume/latex. The Ozone Treatment involved exposure to O3 gas (0.3 vol.%, in air) for 10 min at 160 °C.
Koichiro Saiki - One of the best experts on this subject based on the ideXlab platform.
-
effect of uv Ozone Treatment of the dielectric layer on the device performance of pentacene thin film transistors
Chemical Physics Letters, 2006Co-Authors: Dong Guo, Shiro Entani, Susumu Ikeda, Koichiro SaikiAbstract:The effect of UV/Ozone Treatment of the SiO2 dielectric layer on the film morphology and the electrical performance of the pentacene thin film transistors (TFTs) was investigated. Decreased threshold voltage and improved mobility were obtained after UV/Ozone Treatment. The effect of UV/Ozone Treatment of the substrate in modifying the film growth was distinguished from its effect in modifying the Au electrode by using a series of samples with different architectures. Electron spectroscopic measurement and film morphology observation indicated that the improved TFT performance was achieved mainly by the reduced contamination at the pentacene/SiO2 interface and the increased grain size.
Curt A Richter - One of the best experts on this subject based on the ideXlab platform.
-
ultraviolet Ozone Treatment to reduce metal graphene contact resistance
Applied Physics Letters, 2013Co-Authors: Wei Li, Yiran Liang, Dangmin Yu, Lianmao Peng, K P Pernstich, Tian Shen, A Hight R Walker, Guangjun Cheng, Christina A Hacker, Curt A RichterAbstract:We report reduced contact resistance of single-layer graphene devices by using ultraviolet Ozone Treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition grown single layer graphene. Ultraviolet Ozone Treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl-methacrylate) and photoresist. Our control experiment shows that exposure times up to 10 min did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Ω μm was achieved for 25 min ultraviolet Ozone Treatment, while not significantly altering the electrical properties of the graphene channel region of devices.
-
Ultraviolet/Ozone Treatment to reduce metal-graphene contact resistance
Applied Physics Letters, 2013Co-Authors: Yiran Liang, Lianmao Peng, K P Pernstich, Tian Shen, Guangjun Cheng, Christina A Hacker, A. R. Hight Walker, Curt A RichterAbstract:We report reduced contact resistance of single-layer graphene devices by using ultraviolet Ozone Treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition grown single layer graphene. Ultraviolet Ozone Treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl-methacrylate) and photoresist. Our control experiment shows that exposure times up to 10 min did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Ω μm was achieved for 25 min ultraviolet Ozone Treatment, while not significantly altering the electrical properties of the graphene channel region of devices.
Yong-sang Kim - One of the best experts on this subject based on the ideXlab platform.
-
The effect of indirect UV/Ozone Treatment on pentacene thin film transistors with double-stacked organic gate insulators
Organic Electronics, 2018Co-Authors: Min Su Kim, Donghoon Lee, Hyeong Jun Cho, So Young Lee, Jae Moon Kim, Kee-chan Park, Yong-sang KimAbstract:Abstract We investigated the indirect UV/Ozone Treatment, which means treating the insulator surface under tens of nanometers, rather than the direct surface of the insulator. The double-stacked organic layers are used as gate insulator and the UV/Ozone Treatment is conducted between these two layers. We analyzed the surface morphologies of the gate insulator and the pentacene by atomic force microscopy (AFM) to confirm the effect of indirect UV/Ozone Treatment. The UV/Ozone Treatment reduced the surface roughness of the upper side gate insulator and increased the pentacene grain size. Pentacene-based thin film transistors were fabricated and the electrical property improvement after this Treatment was examined. The largest improvement was found when the UV/Ozone Treatment time is 10 min and the upper side gate insulator thickness is 20 nm, and the mobility at that condition is 1.21 cm2/V s, which is larger than three times that without UV/Ozone Treatment (0.33 cm2/V s).
Dong Guo - One of the best experts on this subject based on the ideXlab platform.
-
effect of uv Ozone Treatment of the dielectric layer on the device performance of pentacene thin film transistors
Chemical Physics Letters, 2006Co-Authors: Dong Guo, Shiro Entani, Susumu Ikeda, Koichiro SaikiAbstract:The effect of UV/Ozone Treatment of the SiO2 dielectric layer on the film morphology and the electrical performance of the pentacene thin film transistors (TFTs) was investigated. Decreased threshold voltage and improved mobility were obtained after UV/Ozone Treatment. The effect of UV/Ozone Treatment of the substrate in modifying the film growth was distinguished from its effect in modifying the Au electrode by using a series of samples with different architectures. Electron spectroscopic measurement and film morphology observation indicated that the improved TFT performance was achieved mainly by the reduced contamination at the pentacene/SiO2 interface and the increased grain size.
