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Ara Philipossian - One of the best experts on this subject based on the ideXlab platform.
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effect of conditioner disc wear on frictional thermal kinetic and Pad micro textural attributes of interlayer dielectric and tungsten chemical mechanical planarization
Japanese Journal of Applied Physics, 2020Co-Authors: Juan Cristobal Mariscal, Jeffrey Mcallister, Yasa Sampurno, Hossein Dadashazar, Ara PhilipossianAbstract:A brand-new conventional diamond disc was subjected to 32 hours of wear during which SEM images of active diamonds were taken and Pad cut rates were measured. ILD wafers were polished before, midway through, and after the wear test (on a brand-new Pad) at varying combinations of pressure and velocity. Tungsten wafers were also polished midway through, and after the 32-hour wear. Polishing was accompanied by Pad Surface topography analysis via confocal microscopy. The disc experienced significant diamond tip micro-wear along with dried slurry accumulation on its substrate causing Pad cut rate to drop by a factor of 2. Despite this drastic change, over the duration of the wear test, there were no substantial changes in Pad micro-texture, nor ILD or tungsten removal rates indicating the lack of any correlation between Pad cut rate and film removal rate during the first 32 hours of wear.
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insights into tungsten chemical mechanical planarization part ii effect of Pad Surface micro texture on frictional thermal and kinetic aspects of the process
ECS Journal of Solid State Science and Technology, 2019Co-Authors: Juan Cristobal Mariscal, Jeffrey Mcallister, Jon Sierra Suarez, Yasa Sampurno, Leonard Borucki, Ara PhilipossianAbstract:The effect of different types of conditioners used during tungsten chemical mechanical planarization (CMP) on frictional, thermal, and kinetic aspects of the process was investigated. Based on previous work, regarding the effect of conditioner type and downforce on the evolution of Pad Surface micro-texture during break-in, two significantly different discs were employed (i.e. conventional vs. CVD-coated). First, mini-marathon style tungsten CMP runs were conducted for each disc. These were followed by tungsten polishing at various pressures and velocities. Pad samples were extracted before and after the mini-marathon polishing runs for confocal microscopy (CM) analysis of their Surface micro-texture. Compared to the CVD-coated disc, the more aggressive conventional disc produced summits that were 60 percent taller and 50 percent sharper. It also caused for contact density to be more than four times higher likely due to the many more Pad fragments that it generated. Consequentially, the Surface micro-texture generated by the conventional disc produced a 50 percent higher directivity and a 60 percent higher removal rate. For both discs, we found that mechanical effects were rate-limiting for tungsten removal. The conventional disc resulted in a Preston's constant that was 24 percent higher than its CVD counterpart owing to its more aggressive nature and Pad Surface micro-texture that it generated.
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effect of conditioner type and downforce and Pad Surface micro texture on sio2 chemical mechanical planarization performance
Micromachines, 2019Co-Authors: Jeffrey Mcallister, Calliandra Stuffle, Dale L Hetherington, Jon Sierra Suarez, Yasa Sampurno, Leonard Borucki, Ara PhilipossianAbstract:Based on a previous work where we investigated the effect of conditioner type and downforce on the evolution of Pad Surface micro-texture during break-in, we have chosen certain break-in conditions to carry out subsequent blanket SiO2 wafer polishing studies. Two different conditioner discs were used in conjunction with up to two different conditioning downforces. For each disc-downforce combination, mini-marathons were run using SiO2 wafers. Prior to polishing, each Pad was broken-in for 30 min with one of the conditioner-downforce combinations. The goal of this study was to polish wafers after this break-in to see how the polishing process behaved immediately after break-in. One of the discs used in this study produced similar micro-texture results at both downforces, which echoed the results seen in the mini-marathon. When comparing the different polishing results obtained from breaking-in the Pad with the different discs used in this study, the coefficient of friction (COF) and SiO2 removal rate (RR) were uncorrelated in all cases. However, the use of different discs resulted in different COF and RR trends. The uncorrelated COF and RR, as well as the differing trends, were explained by Pad micro-texture results (i.e. the differing amount of fractured, poorly supported Pad asperity summits).
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effect of Pad Surface micro texture on removal rate during tungsten chemical mechanical planarization
ECS Journal of Solid State Science and Technology, 2016Co-Authors: Rouchen Han, Yun Zhuang, Yasa Sampurno, Ara PhilipossianAbstract:This study investigated the effect of two conditioner discs (i.e. "Disc A" and "Disc B") during tungsten chemical mechanical planarization. Results showed that while Pad temperature and removal rate increased with polishing pressure and platen velocity on both discs, "Disc B" generated consistently lower removal rates and coefficients of friction than "Disc A". To fundamentally elucidate the cause(s) of such differences, Pad Surface contact area and topography were analyzed using laser confocal microscopy. The comparison of the Pad Surface micro-texture analysis on Pad Surfaces conditioned by both discs indicated that "Disc A" generated a Surface having a smaller abruptness (λ) and more solid contact area which resulted in a higher removal rate. In contrast, "Disc B" generated many large near-contact areas as a result of fractured and collapsed pore walls.
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Pad Surface thermal management during copper chemical mechanical planarization
ECS Journal of Solid State Science and Technology, 2015Co-Authors: Yasa Sampurno, Siannie Theng, Yubo Jiao, Leonard Borucki, Yun Zhuang, Xiaoyan Liao, Ara PhilipossianAbstract:A Pad Surface thermal management system was developed to improve copper removal rate within wafer non-uniformity by locally adjusting the Pad Surface temperature. The system consisted of one or more thermal transfer modules, which contacted the Pad Surface during polishing. Hot or cold water circulated between the thermal transfer module and an external heater or cooler. With the module placed on the Pad Surface, heat conduction occurred between the module and the Pad Surface, producing a localized Pad Surface with higher or lower temperatures. As such, it was expected that local removal rates would change accordingly due to the temperature-sensitive nature of copper chemical mechanical planarization (CMP). In this study, the system was used to adjust the “center-fast” removal rate profile to illustrate its effect during the process. Results showed that, when two thermal transfer modules were employed, local removal rates in the wafer center region decreased significantly while the removal rates near the wafer edge were maintained thereby significantly improving within wafer removal rate non-uniformity. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0101507jss] All rights reserved.
Yun Zhuang - One of the best experts on this subject based on the ideXlab platform.
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effect of Pad Surface micro texture on removal rate during tungsten chemical mechanical planarization
ECS Journal of Solid State Science and Technology, 2016Co-Authors: Rouchen Han, Yun Zhuang, Yasa Sampurno, Ara PhilipossianAbstract:This study investigated the effect of two conditioner discs (i.e. "Disc A" and "Disc B") during tungsten chemical mechanical planarization. Results showed that while Pad temperature and removal rate increased with polishing pressure and platen velocity on both discs, "Disc B" generated consistently lower removal rates and coefficients of friction than "Disc A". To fundamentally elucidate the cause(s) of such differences, Pad Surface contact area and topography were analyzed using laser confocal microscopy. The comparison of the Pad Surface micro-texture analysis on Pad Surfaces conditioned by both discs indicated that "Disc A" generated a Surface having a smaller abruptness (λ) and more solid contact area which resulted in a higher removal rate. In contrast, "Disc B" generated many large near-contact areas as a result of fractured and collapsed pore walls.
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Pad Surface thermal management during copper chemical mechanical planarization
ECS Journal of Solid State Science and Technology, 2015Co-Authors: Yasa Sampurno, Siannie Theng, Yubo Jiao, Leonard Borucki, Yun Zhuang, Xiaoyan Liao, Ara PhilipossianAbstract:A Pad Surface thermal management system was developed to improve copper removal rate within wafer non-uniformity by locally adjusting the Pad Surface temperature. The system consisted of one or more thermal transfer modules, which contacted the Pad Surface during polishing. Hot or cold water circulated between the thermal transfer module and an external heater or cooler. With the module placed on the Pad Surface, heat conduction occurred between the module and the Pad Surface, producing a localized Pad Surface with higher or lower temperatures. As such, it was expected that local removal rates would change accordingly due to the temperature-sensitive nature of copper chemical mechanical planarization (CMP). In this study, the system was used to adjust the “center-fast” removal rate profile to illustrate its effect during the process. Results showed that, when two thermal transfer modules were employed, local removal rates in the wafer center region decreased significantly while the removal rates near the wafer edge were maintained thereby significantly improving within wafer removal rate non-uniformity. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0101507jss] All rights reserved.
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effect of Pad Surface micro texture on dishing and erosion during shallow trench isolation chemical mechanical planarization
Japanese Journal of Applied Physics, 2014Co-Authors: Xiaoyan Liao, Siannie Theng, Leonard Borucki, Yun Zhuang, Toranosuke Ashizawa, Jiang Cheng, Ara PhilipossianAbstract:The effect of Pad Surface micro-texture on dishing and erosion during shallow trench isolation (STI) chemical mechanical planarization was investigated. To generate different Pad Surface micro-textures, a 3M A2810 disc (3M) and a Mitsubishi Materials Corporation disc (MMC) were used to condition a Dow® IC1000™ K-groove Pad. For each disc, 200-mm blanket TEOS wafers and SKW3-2 STI wafers were polished. Results showed that the two discs generated similar blanket wafer removal rates, while the MMC disc generated significantly higher dishing and erosion compared to the 3M disc during patterned wafer polishing. Pad Surface topography was analyzed using laser confocal microscopy after patterned wafer polishing. Results showed that the MMC disc generated a Pad Surface with significantly higher mean Pad summit curvatures than the 3M disc. As the MMC disc generated more and sharper Pad asperities, it resulted in higher dishing and erosion as these sharp asperities make greater direct contact with the "down" features.
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effect of Pad Surface micro texture on removal rate during interlayer dielectric chemical mechanical planarization process
Japanese Journal of Applied Physics, 2013Co-Authors: Xiaoyan Liao, Siannie Theng, Leonard Borucki, Yun Zhuang, Toranosuke Ashizawa, Jiang Cheng, Ara PhilipossianAbstract:The effect of Pad Surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000TM K-groove Pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad Surface micro-texture analysis results showed that Pad Surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.
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analysis of a novel slurry injection system in chemical mechanical planarization
Japanese Journal of Applied Physics, 2011Co-Authors: Anand Meled, Siannie Theng, Yubo Jiao, Yasa Sampurno, Leonard Borucki, Yun Zhuang, Ara PhilipossianAbstract:Slurry mean residence time (MRT), removal rate, and polishing defects were analyzed for a novel slurry injection system used in chemical mechanical planarization. The novel slurry injection system was placed adjacent to the wafer on the Pad Surface and slurry was injected towards the wafer through multiple holes in the trailing edge of the injector bottom. Results showed the novel slurry injection system provided more efficient slurry delivery to the Pad–wafer interface and generated lower slurry MRT, higher removal rate, and lower polishing defects than the standard Pad center area slurry application method currently used in the IC manufacturing industry.
Leonard Borucki - One of the best experts on this subject based on the ideXlab platform.
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insights into tungsten chemical mechanical planarization part ii effect of Pad Surface micro texture on frictional thermal and kinetic aspects of the process
ECS Journal of Solid State Science and Technology, 2019Co-Authors: Juan Cristobal Mariscal, Jeffrey Mcallister, Jon Sierra Suarez, Yasa Sampurno, Leonard Borucki, Ara PhilipossianAbstract:The effect of different types of conditioners used during tungsten chemical mechanical planarization (CMP) on frictional, thermal, and kinetic aspects of the process was investigated. Based on previous work, regarding the effect of conditioner type and downforce on the evolution of Pad Surface micro-texture during break-in, two significantly different discs were employed (i.e. conventional vs. CVD-coated). First, mini-marathon style tungsten CMP runs were conducted for each disc. These were followed by tungsten polishing at various pressures and velocities. Pad samples were extracted before and after the mini-marathon polishing runs for confocal microscopy (CM) analysis of their Surface micro-texture. Compared to the CVD-coated disc, the more aggressive conventional disc produced summits that were 60 percent taller and 50 percent sharper. It also caused for contact density to be more than four times higher likely due to the many more Pad fragments that it generated. Consequentially, the Surface micro-texture generated by the conventional disc produced a 50 percent higher directivity and a 60 percent higher removal rate. For both discs, we found that mechanical effects were rate-limiting for tungsten removal. The conventional disc resulted in a Preston's constant that was 24 percent higher than its CVD counterpart owing to its more aggressive nature and Pad Surface micro-texture that it generated.
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effect of conditioner type and downforce and Pad Surface micro texture on sio2 chemical mechanical planarization performance
Micromachines, 2019Co-Authors: Jeffrey Mcallister, Calliandra Stuffle, Dale L Hetherington, Jon Sierra Suarez, Yasa Sampurno, Leonard Borucki, Ara PhilipossianAbstract:Based on a previous work where we investigated the effect of conditioner type and downforce on the evolution of Pad Surface micro-texture during break-in, we have chosen certain break-in conditions to carry out subsequent blanket SiO2 wafer polishing studies. Two different conditioner discs were used in conjunction with up to two different conditioning downforces. For each disc-downforce combination, mini-marathons were run using SiO2 wafers. Prior to polishing, each Pad was broken-in for 30 min with one of the conditioner-downforce combinations. The goal of this study was to polish wafers after this break-in to see how the polishing process behaved immediately after break-in. One of the discs used in this study produced similar micro-texture results at both downforces, which echoed the results seen in the mini-marathon. When comparing the different polishing results obtained from breaking-in the Pad with the different discs used in this study, the coefficient of friction (COF) and SiO2 removal rate (RR) were uncorrelated in all cases. However, the use of different discs resulted in different COF and RR trends. The uncorrelated COF and RR, as well as the differing trends, were explained by Pad micro-texture results (i.e. the differing amount of fractured, poorly supported Pad asperity summits).
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Pad Surface thermal management during copper chemical mechanical planarization
ECS Journal of Solid State Science and Technology, 2015Co-Authors: Yasa Sampurno, Siannie Theng, Yubo Jiao, Leonard Borucki, Yun Zhuang, Xiaoyan Liao, Ara PhilipossianAbstract:A Pad Surface thermal management system was developed to improve copper removal rate within wafer non-uniformity by locally adjusting the Pad Surface temperature. The system consisted of one or more thermal transfer modules, which contacted the Pad Surface during polishing. Hot or cold water circulated between the thermal transfer module and an external heater or cooler. With the module placed on the Pad Surface, heat conduction occurred between the module and the Pad Surface, producing a localized Pad Surface with higher or lower temperatures. As such, it was expected that local removal rates would change accordingly due to the temperature-sensitive nature of copper chemical mechanical planarization (CMP). In this study, the system was used to adjust the “center-fast” removal rate profile to illustrate its effect during the process. Results showed that, when two thermal transfer modules were employed, local removal rates in the wafer center region decreased significantly while the removal rates near the wafer edge were maintained thereby significantly improving within wafer removal rate non-uniformity. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0101507jss] All rights reserved.
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effect of Pad Surface micro texture on dishing and erosion during shallow trench isolation chemical mechanical planarization
Japanese Journal of Applied Physics, 2014Co-Authors: Xiaoyan Liao, Siannie Theng, Leonard Borucki, Yun Zhuang, Toranosuke Ashizawa, Jiang Cheng, Ara PhilipossianAbstract:The effect of Pad Surface micro-texture on dishing and erosion during shallow trench isolation (STI) chemical mechanical planarization was investigated. To generate different Pad Surface micro-textures, a 3M A2810 disc (3M) and a Mitsubishi Materials Corporation disc (MMC) were used to condition a Dow® IC1000™ K-groove Pad. For each disc, 200-mm blanket TEOS wafers and SKW3-2 STI wafers were polished. Results showed that the two discs generated similar blanket wafer removal rates, while the MMC disc generated significantly higher dishing and erosion compared to the 3M disc during patterned wafer polishing. Pad Surface topography was analyzed using laser confocal microscopy after patterned wafer polishing. Results showed that the MMC disc generated a Pad Surface with significantly higher mean Pad summit curvatures than the 3M disc. As the MMC disc generated more and sharper Pad asperities, it resulted in higher dishing and erosion as these sharp asperities make greater direct contact with the "down" features.
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effect of Pad Surface micro texture on removal rate during interlayer dielectric chemical mechanical planarization process
Japanese Journal of Applied Physics, 2013Co-Authors: Xiaoyan Liao, Siannie Theng, Leonard Borucki, Yun Zhuang, Toranosuke Ashizawa, Jiang Cheng, Ara PhilipossianAbstract:The effect of Pad Surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000TM K-groove Pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad Surface micro-texture analysis results showed that Pad Surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.
Hae Do Jeong - One of the best experts on this subject based on the ideXlab platform.
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Prediction of Real Contact Area from Microtopography on CMP Pad
Journal of Advanced Mechanical Design Systems and Manufacturing, 2012Co-Authors: Hobin Jeong, Hyunseop Lee, Sungha Choi, Youngkyun Lee, Hae Do JeongAbstract:A simplified model related to microtopography on CMP Pad and prediction of real contact area between the Pad and wafers is presented in this paper. The model has been developed on the basis of the analysis of the Pad Surface roughness and contact mechanics. The bearing area curve, representing tribological properties of the Surface, is used to formulate the model. The Pad microtopography which is expressed in the model is uniform and simple. Particularly, the important characteristics of the Pad microtopography for the CMP process are emphasized in the model. It provides more convenient way to perceive the situation of the Pad Surface during the CMP process. The progress of the Pad Surface wear and the real contact area can be easily taken and connected each other by using the model. The model is also verified by comparing the tendency of actual removal rates with those theoretically anticipated. Finally, authors could get the efficient link between the Pad Surface wear and the real contact area, which results in a strong tool to understand the fundamental CMP mechanism of material removal.
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investigation of Pad Surface topography distribution for material removal uniformity in cmp process
Journal of The Electrochemical Society, 2008Co-Authors: Kihyun Park, Hae Do JeongAbstract:This paper investigates the Pad Surface topography distribution and its effect on material removal uniformity using two different types of conditioners in an interlayer dielectric chemical mechanical planarization (CMP) process. The two types of conditioners are a random diamond disk and a uniform diamond disk (UDD). The Pad Surface was roughened by using the two diamond disks, and then the Surface roughness and real contact area between the Pad and the wafer were analyzed. The UDD generated a more uniform Surface layer having a low standard deviation, although it had a low Surface roughness. The random roughness Pad showed a low material removal rate with a wide standard deviation, but the uniform roughness Pad demonstrated a high removal rate with a narrow standard deviation. The uniform roughness Pad improved the wettability of the Pad and uniform distribution of the slurry across the Pad. Therefore, the uniform roughness Pad gave a more stable polishing performance than the random roughness Pad.
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effects of Pad properties on material removal in chemical mechanical polishing
Journal of Materials Processing Technology, 2007Co-Authors: Kihyun Park, Onemoon Chang, Hae Do JeongAbstract:Abstract The Surface roughness among the properties of the polishing Pad is known as the dominant factor that determines the removal rate of the thin film because the material on a wafer Surface is removed by direct contact with the rough Pad Surface. In this paper, the authors investigated the effect of Pad Surface roughness on material removal process in chemical mechanical polishing (CMP). The reduced peak height (Rpk) is an estimate of the peaks above the main plateau and is related to the wear characteristics of the Pad. In addition, the Pad conditioning process acts to define and maintain the structure of the Pad Surface asperities and as such affects the material removal rate, material removal stability. Without regeneration of the Pad Surface during polishing, the material removal rate rapidly declines according to the polishing time. And the material removal rate is in direct proportion to Rpk from the experimental results. In conclusion, the Surface roughness of the Pad has a strong correlation with the material removal in CMP.
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mathematical modeling of cmp conditioning process
Microelectronic Engineering, 2007Co-Authors: Onemoon Chang, Kihyun Park, Hyoungjae Kim, Boumyoung Park, Heondeok Seo, Hae Do JeongAbstract:Up to now, the conditioning model with an oscillating conditioner wheel has not been studied. In this paper, kinematic analysis of the conditioning process and mathematical modeling of Pad wear while the conditioner wheel oscillates is studied and the results show how the various parameters of the conditioning process influence the Pad shape. The conditioning of the polishing Pad is one of the most important processes associated with the CMP (Chemical Mechanical Polishing). As the wafer is polished, the Surface of the Pad can be deteriorated with a reduced polishing rate and reduced planarity due to wear and glazing of the Pad. Thus, the polishing Pad needs to be conditioned to maintain its effectiveness. In general, the conditioning process is used to regenerate the Pad Surface by breaking the glazed area of the Pad and increase the MRR (Material Removal Rate) and give us longer Pad life. However, as the conditioning process continues, the Pad shape becomes more and more concave over the whole Pad while the conditioner wheel oscillates (Y.Y. Zhou, E.C. Davis, Mat. Sci. Eng. B. 68 (1999), 91-98). It has been shown that the concavity of the polishing Pad increases with conditioning time - longer conditioning induces a higher incidence of concavity of the polishing Pad. Therefore, the conditioning process is related to the WIWNU (Within Wafer Non-Uniformity). Through this conditioning model, thickness variation of the polishing Pad can be predicted.
Xiaoyan Liao - One of the best experts on this subject based on the ideXlab platform.
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Pad Surface thermal management during copper chemical mechanical planarization
ECS Journal of Solid State Science and Technology, 2015Co-Authors: Yasa Sampurno, Siannie Theng, Yubo Jiao, Leonard Borucki, Yun Zhuang, Xiaoyan Liao, Ara PhilipossianAbstract:A Pad Surface thermal management system was developed to improve copper removal rate within wafer non-uniformity by locally adjusting the Pad Surface temperature. The system consisted of one or more thermal transfer modules, which contacted the Pad Surface during polishing. Hot or cold water circulated between the thermal transfer module and an external heater or cooler. With the module placed on the Pad Surface, heat conduction occurred between the module and the Pad Surface, producing a localized Pad Surface with higher or lower temperatures. As such, it was expected that local removal rates would change accordingly due to the temperature-sensitive nature of copper chemical mechanical planarization (CMP). In this study, the system was used to adjust the “center-fast” removal rate profile to illustrate its effect during the process. Results showed that, when two thermal transfer modules were employed, local removal rates in the wafer center region decreased significantly while the removal rates near the wafer edge were maintained thereby significantly improving within wafer removal rate non-uniformity. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0101507jss] All rights reserved.
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effect of Pad Surface micro texture on dishing and erosion during shallow trench isolation chemical mechanical planarization
Japanese Journal of Applied Physics, 2014Co-Authors: Xiaoyan Liao, Siannie Theng, Leonard Borucki, Yun Zhuang, Toranosuke Ashizawa, Jiang Cheng, Ara PhilipossianAbstract:The effect of Pad Surface micro-texture on dishing and erosion during shallow trench isolation (STI) chemical mechanical planarization was investigated. To generate different Pad Surface micro-textures, a 3M A2810 disc (3M) and a Mitsubishi Materials Corporation disc (MMC) were used to condition a Dow® IC1000™ K-groove Pad. For each disc, 200-mm blanket TEOS wafers and SKW3-2 STI wafers were polished. Results showed that the two discs generated similar blanket wafer removal rates, while the MMC disc generated significantly higher dishing and erosion compared to the 3M disc during patterned wafer polishing. Pad Surface topography was analyzed using laser confocal microscopy after patterned wafer polishing. Results showed that the MMC disc generated a Pad Surface with significantly higher mean Pad summit curvatures than the 3M disc. As the MMC disc generated more and sharper Pad asperities, it resulted in higher dishing and erosion as these sharp asperities make greater direct contact with the "down" features.
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effect of Pad Surface micro texture on removal rate during interlayer dielectric chemical mechanical planarization process
Japanese Journal of Applied Physics, 2013Co-Authors: Xiaoyan Liao, Siannie Theng, Leonard Borucki, Yun Zhuang, Toranosuke Ashizawa, Jiang Cheng, Ara PhilipossianAbstract:The effect of Pad Surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000TM K-groove Pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad Surface micro-texture analysis results showed that Pad Surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.
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effect of Pad Surface micro texture on coefficient of friction and removal rate during copper cmp process
Electrochemical and Solid State Letters, 2011Co-Authors: Xiaoyan Liao, Leonard Borucki, Yun Zhuang, Toranosuke Ashizawa, S Theng, Xiaomin Wei, Ara PhilipossianAbstract:In this study, 200-mm blanket copper wafers were polished on an IC1010 M-groove Pad, which was conditioned by a 3M A2810 disc and Mitsubishi Materials Corporation (MMC) TRD disc. Pad Surface contact area and topography were analyzed using laser confocal microscopy and scanning electron microscopy. The MMC TRD disc generated a lot of large near contact areas corresponding to fractured and collapsed pore walls. The fractured and collapsed pore walls partly covered the adjacent pores, making the Pad Surface more lubricated during wafer polishing and rendering significantly lower coefficient of friction and removal rate than the 3M A2810 disc.
