The Experts below are selected from a list of 37269 Experts worldwide ranked by ideXlab platform
M.j. Deen - One of the best experts on this subject based on the ideXlab platform.
-
Evolutionary Parameter Extraction for an organic TFT compact model including contact effects
Organic Electronics, 2018Co-Authors: A. Romero, Rodrigo Picos, Jesús González, M.j. Deen, J.a. Jiménez-tejadaAbstract:Abstract Parameter Extraction is a complex procedure when contact effects are present. In this work, a multi-objective evolutionary Parameter Extraction procedure is used to simultaneously determine the Parameters of both a compact model for the current-voltage characteristics of organic thin-film transistors and a contact model. This procedure can be used to overcome shortcomings of previous Parameter Extraction procedures. The proposed evolutionary procedure can be used in those situations whereby the Parameter set extracted by other procedures does not comply its physical meaning, or if a poor agreement between the experimental data and the analytical results exists. In the last case, the evolutionary procedure can be used as a problem optimization method. After the evolutionary Parameter Extraction procedure is applied to the transistor output characteristics, the obtained results show an excellent agreement with the experimental data.
-
organic thin film transistors part ii Parameter Extraction
IEEE Transactions on Electron Devices, 2009Co-Authors: M.j. Deen, Ognian Marinov, Ute Zschieschang, Hagen KlaukAbstract:A Parameter Extraction methodology and a verification of a generic analytical model and a thin-film transistor (TFT) compact dc model for the current-voltage characteristics of organic TFTs are presented. The verification shows that the proposed models meet the requirements for compact modeling and for computer circuit simulators. The models are fully symmetrical, and the TFT compact dc model is validated in all regimes of operation-linear and saturation above threshold, subthreshold, and reverse biasing. Suitable characterization techniques for Parameter Extraction of mobility, threshold voltage, and contact resistance are provided. Approaches are elaborated for the essential practical feature of upgradability and reducibility of the TFT compact dc model, allowing for easier implementation and modification, as well as separation of characterization techniques.
Hyungcheol Shin - One of the best experts on this subject based on the ideXlab platform.
-
A simple Parameter Extraction method of spiral on-chip inductors
IEEE Transactions on Electron Devices, 2005Co-Authors: Myounggon Kang, Joonho Gil, Hyungcheol ShinAbstract:Accurate measurement and Parameter Extraction for spiral inductors are very important in monolithic microwave integrated circuit (MMIC) design. In this paper, we have proposed an easy and simple model Parameter Extraction method of wide-band on-chip inductor. The simple Extraction methodology is applied to extract Parameters from the measured S-Parameters of spiral inductors fabricated with 0.18-/spl mu/m CMOS technology. Model prediction shows excellent agreement with the measured data over a wide frequency region. Also, the model can be easily integrated in SPICE-compatible simulators because all the elements are frequency independent. This method will provide practical and useful circuit Parameters for MMIC design.
-
MOSFET MODELING AND Parameter Extraction FOR RF IC'S
International Journal of High Speed Electronics and Systems, 2001Co-Authors: Ickjin Kwon, Hyungcheol Shin, Kwyro LeeAbstract:After reviewing the basic concept and general strategies, we have examined a variety of examples of modeling and Parameter Extraction methods for RF MOSFET's. Modeling and Parameter Extraction techniques popular in III-V FET modeling were reviewed and recent efforts to model the RF MOSFET and extract the model Parameters were examined in light of the differences between the MOSFET and the III-V FET. A very simple and accurate Parameter Extraction method studied in our laboratory for three-terminal modeling considering charge conservation is also introduced. Our works have two important implications. One is that the consideration for charge conservation is important not only for accurate device modeling and circuit simulation but even more for proper Parameter Extraction. Another is that one accurate large-signal I-V model is enough to be used for DC, low-frequency analog, as well as RF circuit simulation. Four-terminal modeling based on new equivalent circuits to address the high-frequency effects arising in a MOSFET is very complicated and not practical for CAD applications, even without considering the substrate coupling terms. As a temporary alternative, the macro-modeling approach is examined with various examples.
Hagen Klauk - One of the best experts on this subject based on the ideXlab platform.
-
organic thin film transistors part ii Parameter Extraction
IEEE Transactions on Electron Devices, 2009Co-Authors: M.j. Deen, Ognian Marinov, Ute Zschieschang, Hagen KlaukAbstract:A Parameter Extraction methodology and a verification of a generic analytical model and a thin-film transistor (TFT) compact dc model for the current-voltage characteristics of organic TFTs are presented. The verification shows that the proposed models meet the requirements for compact modeling and for computer circuit simulators. The models are fully symmetrical, and the TFT compact dc model is validated in all regimes of operation-linear and saturation above threshold, subthreshold, and reverse biasing. Suitable characterization techniques for Parameter Extraction of mobility, threshold voltage, and contact resistance are provided. Approaches are elaborated for the essential practical feature of upgradability and reducibility of the TFT compact dc model, allowing for easier implementation and modification, as well as separation of characterization techniques.
J.f. Donlon - One of the best experts on this subject based on the ideXlab platform.
-
Parameter Extraction for a physics-based circuit simulator IGBT model
Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition 2003. APEC '03., 1Co-Authors: X. Kang, Enrico Santi, Jerry L. Hudgins, Patrick R. Palmer, J.f. DonlonAbstract:A practical Parameter Extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the Extraction procedure, only one simple clamped inductive load test is needed for the Extraction of the eleven and thirteen Parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy of the proposed IGBT model and the robustness of the Parameter Extraction method.
Jerry L. Hudgins - One of the best experts on this subject based on the ideXlab platform.
-
Parameter Extraction Procedure for Vertical SiC Power JFET
IEEE Transactions on Industry Applications, 2011Co-Authors: Alexander Grekov, Zhiyang Chen, Jerry L. Hudgins, David C. Sheridan, Jeff B. Casady, Homer Alan Mantooth, Enrico SantiAbstract:A practical Parameter Extraction procedure for a power silicon carbide (SiC) junction field-effect transistor (JFET) is presented. The carrier mobility and carrier concentration are very important Parameters, strongly affecting the device current capability and dynamic characteristics for a given design. When modeling JFETs, the values of these Parameters are usually based on assumptions and given by a vendor in a range. As a result, model accuracy is compromised. In this paper, a step-by-step Parameter Extraction procedure is described that includes the Extraction of mobility and carrier concentration in the channel and drift regions based on knowledge of device geometrical Parameters. For the first time, carrier mobilities in the channel and drift regions of a power JFET are extracted individually. It is found that channel and drift region mobilities can be very different for a given device since they are strongly dependent on the fabrication process. The separate Extraction of these two mobilities can also improve model accuracy in the case of imperfect knowledge of the device geometry. The developed procedure includes the Extraction of empirical Parameters describing the temperature dependence of mobilities in the channel and drift regions. A simple static I- V characterization and C-V measurements are the only measurements required for the Parameter Extraction. In this paper, the procedure is experimentally validated for both normally off (enhancement mode) and normally on (depletion mode) JFETs.
-
Parameter Extraction procedure for high power SiC JFET
2009 IEEE Energy Conversion Congress and Exposition, 2009Co-Authors: Alexander Grekov, Zhiyang Chen, Enrico Santi, Jerry L. Hudgins, Alan Mantooth, David C. Sheridan, Jeff B. CasadyAbstract:A practical Parameter Extraction procedure for power junction field effect transistor (JFET) is presented. The carrier mobility and carrier concentrations are very important Parameters, strongly affecting the current capability and dynamic characteristics of the device for a given design. When modeling JFETs, values of these Parameters usually are based on assumptions and given by a vendor in a range. As a result, model accuracy is compromised. In this paper, a step-by-step Parameter Extraction procedure is described that includes Extraction of the mobility and the carrier concentration in the channel and drift regions based on knowledge of the device geometrical Parameters. For the first time, carrier mobility in channel and drift regions of power JFET are extracted individually. It is found that channel and drift region mobilities can be very different for a given device, since they are strongly fabrication-process dependent. The developed procedure includes Extraction of Parameters for proposed empirical temperature dependencies of mobilities in the channel and drift regions. A simple static I-V characterization and C-V measurements are the only measurements required for the Parameter Extraction.
-
Parameter Extraction for a physics-based circuit simulator IGBT model
Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition 2003. APEC '03., 1Co-Authors: X. Kang, Enrico Santi, Jerry L. Hudgins, Patrick R. Palmer, J.f. DonlonAbstract:A practical Parameter Extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the Extraction procedure, only one simple clamped inductive load test is needed for the Extraction of the eleven and thirteen Parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy of the proposed IGBT model and the robustness of the Parameter Extraction method.
