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Noriaki Okamoto - One of the best experts on this subject based on the ideXlab platform.
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Crystallization‐induced stress in Phosphorus‐doped amorphous silicon thin films
Journal of Applied Physics, 1994Co-Authors: Hideo Miura, Noriaki OkamotoAbstract:The effect of Phosphorus doping on the crystallization‐induced stress of silicon thin films is investigated experimentally using a scanning laser microscope. Though the intrinsic stress of the Phosphorus‐doped amorphous silicon films and the crystallization‐induced stress of the films do not change, regardless of the doped Phosphorus Concentration, the final residual stress of the film after full annealing depends on the Phosphorus Concentration. The final stress decreases by increasing the dopant Concentration. In addition, Phosphorus doping lowers the crystallization temperature of the amorphous silicon thin films. The existing Phosphorus at the interface of the film and the base oxide film is found to change the crystallization mechanism and the magnitude of the stress developed.
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CRYSTALLIZATION-INDUCED STRESS IN Phosphorus-DOPED AMORPHOUS SILICON THIN FILMS
Journal of Applied Physics, 1994Co-Authors: Hideo Miura, Noriaki OkamotoAbstract:The effect of Phosphorus doping on the crystallization‐induced stress of silicon thin films is investigated experimentally using a scanning laser microscope. Though the intrinsic stress of the Phosphorus‐doped amorphous silicon films and the crystallization‐induced stress of the films do not change, regardless of the doped Phosphorus Concentration, the final residual stress of the film after full annealing depends on the Phosphorus Concentration. The final stress decreases by increasing the dopant Concentration. In addition, Phosphorus doping lowers the crystallization temperature of the amorphous silicon thin films. The existing Phosphorus at the interface of the film and the base oxide film is found to change the crystallization mechanism and the magnitude of the stress developed.
Hideo Miura - One of the best experts on this subject based on the ideXlab platform.
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Crystallization‐induced stress in Phosphorus‐doped amorphous silicon thin films
Journal of Applied Physics, 1994Co-Authors: Hideo Miura, Noriaki OkamotoAbstract:The effect of Phosphorus doping on the crystallization‐induced stress of silicon thin films is investigated experimentally using a scanning laser microscope. Though the intrinsic stress of the Phosphorus‐doped amorphous silicon films and the crystallization‐induced stress of the films do not change, regardless of the doped Phosphorus Concentration, the final residual stress of the film after full annealing depends on the Phosphorus Concentration. The final stress decreases by increasing the dopant Concentration. In addition, Phosphorus doping lowers the crystallization temperature of the amorphous silicon thin films. The existing Phosphorus at the interface of the film and the base oxide film is found to change the crystallization mechanism and the magnitude of the stress developed.
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CRYSTALLIZATION-INDUCED STRESS IN Phosphorus-DOPED AMORPHOUS SILICON THIN FILMS
Journal of Applied Physics, 1994Co-Authors: Hideo Miura, Noriaki OkamotoAbstract:The effect of Phosphorus doping on the crystallization‐induced stress of silicon thin films is investigated experimentally using a scanning laser microscope. Though the intrinsic stress of the Phosphorus‐doped amorphous silicon films and the crystallization‐induced stress of the films do not change, regardless of the doped Phosphorus Concentration, the final residual stress of the film after full annealing depends on the Phosphorus Concentration. The final stress decreases by increasing the dopant Concentration. In addition, Phosphorus doping lowers the crystallization temperature of the amorphous silicon thin films. The existing Phosphorus at the interface of the film and the base oxide film is found to change the crystallization mechanism and the magnitude of the stress developed.
S.e. Smith - One of the best experts on this subject based on the ideXlab platform.
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efflux of phosphate from the ectomycorrhizal basidiomycete pisolithus tinctorius general characteristics and the influence of intracellular Phosphorus Concentration
Fungal Biology, 1993Co-Authors: John W.g. Cairney, S.e. SmithAbstract:We have investigated phosphate absorption and efflux from mycelium of Pisolithus tinctorius and compared this with several other ecto- and ericoid mycorrhizal fungi. Phosphate absorption over a 16 h period was similar in all fungi (19–38 μmol g −1 d.w. ) with the exception of Paxillius involutus where absorption was 2–4 times greater. Efflux of phosphate from Pisolithus tinctorius followed the established pattern for efflux of ions from plant and fungal tissue. The proportion of 32 P absorbed that was lost to the bathing solution during an 8 h elution period was around 10% for all fungi. Efflux of phosphate from P. tinctorius was greatest, and absorption lowest where the fungus had a high intracellular Phosphorus Concentration. It is suggested that efflux of phosphate may be important in regulating mycelial Phosphorus balance where mycelium has a high Phosphorus status, with net efflux occurring where the intracellular orthophosphate Concentration is high and the external phosphate Concentration is low. The results are discussed in the context of nutrient transfer at the fungus-root interface in ectomycorrhizas.
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influence of intracellular Phosphorus Concentration on phosphate absorption by the ectomycorrhizal basidiomycete pisolithus tinctorius
Fungal Biology, 1992Co-Authors: John W.g. Cairney, S.e. SmithAbstract:Mycelium of Pisolithus tinctorius grown on media with phosphate Concentrations in the range 0·01–6·00 m m was found to have total Phosphorus Concentrations of 55–413 mol g −1 ( d.w. ) (representing 0·17–1·30% of mycelial d.w. ). The amount of phosphate absorbed by mycelium transferred to simple solutions containing orthophosphate was greatly increased in mycelium where the intracellular Phosphorus Concentration was 168 mol g −1 ( d.w. ) or lower. The results are discussed in relation to phosphate accumulation and translocation by the extramatrical mycelium of ectomycorrhizas in soil.
Yiyong Zhou - One of the best experts on this subject based on the ideXlab platform.
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sediment water interaction in Phosphorus cycling as affected by trophic states in a chinese shallow lake lake donghu
Hydrobiologia, 2016Co-Authors: Xi Chen, Jie Hou, Xiuyun Cao, Chunlei Song, Yiyong ZhouAbstract:Lake sediment substantially accumulates nutrients, while little is known regarding the conditions under which it tends to be a sink or source of Phosphorus. It is postulated that the above functions were largely dependent on trophic state. To test this hypothesis, composition, abundance, and size-spectrum of phytoplankton were studied in a Chinese shallow lake (Lake Donghu), together with Concentrations and sorption behaviors of Phosphorus in water column and sediment. Relationships among these variables were also examined by structural equation model. In the basins with the lowest Phosphorus Concentration, sediment was a Phosphorus source as judged by equilibrium Phosphorus Concentration, directly affecting the abundance of phytoplankton with smaller size. Contrastingly, in the basins with the highest Phosphorus Concentration, sediment tended to uptake Phosphorus, companied by the lowest ratio of nitrogen to Phosphorus, diversity, and evenness of phytoplankton with the smaller size one dominating. Oscillatoria sp. was directly affected by ammonia and Phosphorus. Moreover, with a balanced exchange of Phosphorus between sediment and water column, phytoplankton increased markedly with the highest diversity and evenness in the basins having intermediate Phosphorus Concentration. Overall, trophic state modulated sediment functions to supply nutrient and was in turn greatly affected by the sediment in shallow lakes.
Luis E Eguiarte - One of the best experts on this subject based on the ideXlab platform.
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divergence with gene flow is driven by local adaptation to temperature and soil Phosphorus Concentration in teosinte subspecies zea mays parviglumis and zea mays mexicana
Molecular Ecology, 2019Co-Authors: Jonas A Aguirreliguori, Brandon S Gaut, Juan P Jaramillocorrea, Maud I Tenaillon, Salvador Monteshernandez, Felipe Garciaoliva, Sarah Hearne, Luis E EguiarteAbstract:Patterns of genomic divergence between hybridizing taxa can be heterogeneous along the genome. Both differential introgression and local adaptation may contribute to this pattern. Here, we analysed two teosinte subspecies, Zea mays ssp. parviglumis and ssp. mexicana, to test whether their divergence has occurred in the face of gene flow and to infer which environmental variables have been important drivers of their ecological differentiation. We generated 9,780 DArTseqTM SNPs for 47 populations, and used an additional data set containing 33,454 MaizeSNP50 SNPs for 49 populations. With these data, we inferred features of demographic history and performed genome wide scans to determine the number of outlier SNPs associated with climate and soil variables. The two data sets indicate that divergence has occurred or been maintained despite continuous gene flow and/or secondary contact. Most of the significant SNP associations were to temperature and to Phosphorus Concentration in the soil. A large proportion of these candidate SNPs were located in regions of high differentiation that had been identified previously as putative inversions. We therefore propose that genomic differentiation in teosintes has occurred by a process of adaptive divergence, with putative inversions contributing to reduced gene flow between locally adapted populations.