The Experts below are selected from a list of 7020 Experts worldwide ranked by ideXlab platform
Woo-young Choi - One of the best experts on this subject based on the ideXlab platform.
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optical power dependence of gain noise and bandwidth characteristics for 850 nm cmos silicon avalanche photodetectors
IEEE Journal of Selected Topics in Quantum Electronics, 2014Co-Authors: Myungjae Lee, H Rucker, Woo-young ChoiAbstract:We investigate the effects of incident optical powers on the performance of 850-nm silicon avalanche photodetectors (APDs) realized with P + /N-well junctions in standard CMOS technology. The current-voltage characteristics, responsivities, avalanche gains, noise power spectral densities, excess noise factors, electrical reflection coefficients, and Photodetection frequency responses of the fabricated CMOS-APD are measured for different incident optical powers. In addition, the Photodetection frequency responses at different incident optical powers are modeled with equivalent circuits and the influence of the optical power on Photodetection bandwidth is analyzed. From these, we show that, near the avalanche breakdown voltage, the CMOS-APD avalanche gain and excess noise factor increase and Photodetection bandwidth decreases with decreasing incident optical power. These results should be very useful for realizing high-performance CMOS integrated optical receivers for various optical-interconnect applications.
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area dependent Photodetection frequency response characterization of silicon avalanche photodetectors fabricated with standard cmos technology
IEEE Transactions on Electron Devices, 2013Co-Authors: Myungjae Lee, Woo-young ChoiAbstract:We investigate the area-dependent characteristics of Photodetection frequency responses of 850-nm silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. CMOS-compatible APDs (CMOS-APDs) based on a p+/n-well junction with four different device areas are used for the investigation, and we identify factors that influence Photodetection frequency responses with the goal of achieving optimal Photodetection bandwidth performance. Their current-voltage characteristics, electrical reflection coefficients, and Photodetection frequency responses are measured, and the characteristics of the CMOS-APD Photodetection frequency responses are analyzed using equivalent circuit models. From this, it is clarified how the four different factors of photogenerated-carrier transit time, device RC time constant, inductive-peaking effect, and parasitics contribute to the Photodetection frequency responses and how their contribution changes with device areas. Among the four types of CMOS-APDs investigated in this study, the 10 × 10 μm2 CMOS-APD has the largest 3-dB Photodetection bandwidth of 7.6 GHz.
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a silicon avalanche photodetector fabricated with standard cmos technology with over 1 thz gain bandwidth product
Optics Express, 2010Co-Authors: Woo-young ChoiAbstract:We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N+/P-well junction, and its current-voltage characteristics, responsivity, avalanche gain, and Photodetection frequency response are measured. Gain-bandwidth product over 1 THz is achieved with the CMOS-APD having avalanche gain of 569 and 3-dB Photodetection bandwidth of 3.2 GHz.
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equivalent circuit model for si avalanche photodetectors fabricated in standard cmos process
IEEE Electron Device Letters, 2008Co-Authors: Hyo-soon Kang, Woo-young ChoiAbstract:We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The equivalent circuit model includes an inductive component for avalanche delay, a current source for photogenerated carriers, and several components that model the device structure and parasitic effects. The model provides accurate impedance characteristics and Photodetection frequency responses.
Yusheng Lai - One of the best experts on this subject based on the ideXlab platform.
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silicon based broadband antenna for high responsivity and polarization insensitive Photodetection at telecommunication wavelengths
Nature Communications, 2014Co-Authors: Kengte Lin, Hsuenli Chen, Yusheng LaiAbstract:Although the concept of using local surface plasmon resonance based nanoantenna for Photodetection well below the semiconductor band edge has been demonstrated previously, the nature of local surface plasmon resonance based devices cannot meet many requirements of Photodetection applications. Here we propose the concept of deep-trench/thin-metal (DTTM) active antenna that take advantage of surface plasmon resonance phenomena, three-dimensional cavity effects, and large-area metal/semiconductor junctions to effectively generate and collect hot electrons arising from plasmon decay and, thereby, increase photocurrent. The DTTM-based devices exhibited superior photoelectron conversion ability and high degrees of detection linearity under infrared light of both low and high intensity. Therefore, these DTTM-based devices have the attractive properties of high responsivity, extremely low power consumption, and polarization-insensitive detection over a broad bandwidth, suggesting great potential for use in Photodetection and on-chip Si photonics in many applications of telecommunication fields.
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silicon based broadband antenna for high responsivity and polarization insensitive Photodetection at telecommunication wavelengths
Nature Communications, 2014Co-Authors: Kengte Lin, Hsuenli Chen, Yusheng LaiAbstract:Small on-chip photodetectors are of promise for telecommunications applications. Here, Lin et al. demonstrate that metal trenches on a silicon chip enable highly sensitive Photodetection at telecommunications wavelengths.
Edward H Sargent - One of the best experts on this subject based on the ideXlab platform.
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flexible filter free narrowband photodetector with high gain and customized responsive spectrum
Advanced Functional Materials, 2017Co-Authors: Liang Gao, Chuancheng Jia, Kai Zeng, Weicheng Pan, Yang Zhao, Zhixin Zhao, Guangda Niu, Xuefeng Guo, Pelayo Garcia F De Arquer, Edward H SargentAbstract:Conventional narrowband Photodetection is enabled by coupling broadband photodetectors with complex optical filters. The recently reported charge collection narrowing, an alternative filter-free strategy, attains very narrowband Photodetection at the sacrifice of sensitivity. Herein, a new strategy is proposed to customize the responsive spectrum with high gain by using dye molecules with intrinsically versatile and narrowband absorption. The device configuration is organic dye/Zn0.9Mg0.1O nanoparticles/graphene, where the organic dye serves as the narrowband absorber, graphene serves as the fast carrier transport channel, and Zn0.9Mg0.1O nanoparticles play a triple role of enhancing dye loading, suppressing dye aggregation and blocking charge back recombination. A high responsivity of 8 × 103 A W−1 is thus obtained at a 530 nm response peak with a 60 nm full-width at half maximum, a four orders of magnitude increase in sensitivity compared to the best narrowband photodetectors reported to date under the comparable electric field. Organic dyes with dual-band absorption to demonstrate narrowband photodetectors with customized responsive spectrum are further implemented. The approach opens the way to the realization of efficient flexible narrowband Photodetection for electronic skin and wearable electronic applications.
Franco Nori - One of the best experts on this subject based on the ideXlab platform.
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Photodetection probability in quantum systems with arbitrarily strong light matter interaction
Scientific Reports, 2018Co-Authors: Omar Di Stefano, Anton Frisk Kockum, A Ridolfo, Salvatore Savasta, Franco NoriAbstract:Cavity-QED systems have recently reached a regime where the light-matter interaction strength amounts to a non-negligible fraction of the resonance frequencies of the bare subsystems. In this regime, it is known that the usual normal-order correlation functions for the cavity-photon operators fail to describe both the rate and the statistics of emitted photons. Following Glauber’s original approach, we derive a simple and general quantum theory of Photodetection, valid for arbitrary light-matter interaction strengths. Our derivation uses Fermi’s golden rule, together with an expansion of system operators in the eigenbasis of the interacting light-matter system, to arrive at the correct Photodetection probabilities. We consider both narrow- and wide-band photodetectors. Our description is also valid for point-like detectors placed inside the optical cavity. As an application, we propose a gedanken experiment confirming the virtual nature of the bare excitations that enrich the ground state of the quantum Rabi model.
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Photodetection probability in quantum systems with arbitrarily strong light matter interaction
Scientific Reports, 2018Co-Authors: Omar Di Stefano, Anton Frisk Kockum, A Ridolfo, Salvatore Savasta, Franco NoriAbstract:Cavity-QED systems have recently reached a regime where the light-matter interaction strength amounts to a non-negligible fraction of the resonance frequencies of the bare subsystems. In this regime, it is known that the usual normal-order correlation functions for the cavity-photon operators fail to describe both the rate and the statistics of emitted photons. Following Glauber’s original approach, we derive a simple and general quantum theory of Photodetection, valid for arbitrary light-matter interaction strengths. Our derivation uses Fermi’s golden rule, together with an expansion of system operators in the eigenbasis of the interacting light-matter system, to arrive at the correct Photodetection probabilities. We consider both narrow- and wide-band photodetectors. Our description is also valid for point-like detectors placed inside the optical cavity. As an application, we propose a gedanken experiment confirming the virtual nature of the bare excitations that enrich the ground state of the quantum Rabi model.
He Jungang - One of the best experts on this subject based on the ideXlab platform.
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Flexible Filter-Free Narrowband Photodetector with High Gain and Customized Responsive Spectrum
ADVANCED FUNCTIONAL MATERIALS, 2017Co-Authors: Gao Liang, Ge Cong, Li Wenhui, Jia Chuancheng, Zeng Kai, Pan Weicheng, Wu Haodi, Zhao Yang, He Yisu, He JungangAbstract:Conventional narrowband Photodetection is enabled by coupling broadband photodetectors with complex optical filters. The recently reported charge collection narrowing, an alternative filter-free strategy, attains very narrowband Photodetection at the sacrifice of sensitivity. Herein, a new strategy is proposed to customize the responsive spectrum with high gain by using dye molecules with intrinsically versatile and narrowband absorption. The device configuration is organic dye/Zn0.9Mg0.1O nanoparticles/graphene, where the organic dye serves as the narrowband absorber, graphene serves as the fast carrier transport channel, and Zn0.9Mg0.1O nanoparticles play a triple role of enhancing dye loading, suppressing dye aggregation and blocking charge back recombination. A high responsivity of 8 x 10(3) A W-1 is thus obtained at a 530 nm response peak with a 60 nm full-width at half maximum, a four orders of magnitude increase in sensitivity compared to the best narrowband photodetectors reported to date under the comparable electric field. Organic dyes with dual-band absorption to demonstrate narrowband photodetectors with customized responsive spectrum are further implemented. The approach opens the way to the realization of efficient flexible narrowband Photodetection for electronic skin and wearable electronic applications.Major State Basic Research Development Program [2016YFB0700700, 2016YFA0204000]; seed project of the Wuhan National Laboratory for Optoelectronics; Self-determined and Innovative Research Funds of the HUST [2016JCTD111]SCI(E)ARTICLE332
