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C F Mcconville - One of the best experts on this subject based on the ideXlab platform.

  • valence band offset of the zno aln heterojunction determined by x ray Photoemission Spectroscopy
    Applied Physics Letters, 2008
    Co-Authors: Tim D. Veal, P. D. C. King, S. A. Hatfield, L R Bailey, C F Mcconville, Eric Frayssinet, Fabrice Semond, Bernard Martel, J. Zúñiga-pérez
    Abstract:

    The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray Photoemission Spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

  • inn gan valence band offset high resolution x ray Photoemission Spectroscopy measurements
    Physical Review B, 2008
    Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F Mcconville
    Abstract:

    High-resolution x-ray Photoemission Spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

  • inn gan valence band offset high resolution x ray Photoemission Spectroscopy measurements
    Physical Review B, 2008
    Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F Mcconville
    Abstract:

    High-resolution x-ray Photoemission Spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be $0.58\ifmmode\pm\else\textpm\fi{}0.08\text{ }\text{eV}$. This is discussed within the context of previous measurements and calculations and is in agreement with the value of $0.52\ifmmode\pm\else\textpm\fi{}0.14\text{ }\text{eV}$ determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of $2.22\ifmmode\pm\else\textpm\fi{}0.10\text{ }\text{eV}$.

Tim D. Veal - One of the best experts on this subject based on the ideXlab platform.

  • valence band offset of the zno aln heterojunction determined by x ray Photoemission Spectroscopy
    Applied Physics Letters, 2008
    Co-Authors: Tim D. Veal, P. D. C. King, S. A. Hatfield, L R Bailey, C F Mcconville, Eric Frayssinet, Fabrice Semond, Bernard Martel, J. Zúñiga-pérez
    Abstract:

    The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray Photoemission Spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

  • inn gan valence band offset high resolution x ray Photoemission Spectroscopy measurements
    Physical Review B, 2008
    Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F Mcconville
    Abstract:

    High-resolution x-ray Photoemission Spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

  • inn gan valence band offset high resolution x ray Photoemission Spectroscopy measurements
    Physical Review B, 2008
    Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F Mcconville
    Abstract:

    High-resolution x-ray Photoemission Spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be $0.58\ifmmode\pm\else\textpm\fi{}0.08\text{ }\text{eV}$. This is discussed within the context of previous measurements and calculations and is in agreement with the value of $0.52\ifmmode\pm\else\textpm\fi{}0.14\text{ }\text{eV}$ determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of $2.22\ifmmode\pm\else\textpm\fi{}0.10\text{ }\text{eV}$.

  • Quantized electron accumulation states in indium nitride studied by angle-resolved Photoemission Spectroscopy
    Physical Review Letters, 2006
    Co-Authors: Leyla Colakerol, Timothy Learmonth, L. Plucinski, Shancai Wang, A. Demasi, Per-anders Glans, Hae Kyung Jeong, Tim D. Veal, Yufeng Zhang, L F J Piper
    Abstract:

    Electron accumulation states in InN have been measured using high resolution angle-resolved Photoemission Spectroscopy (ARPES). The electrons in the accumulation layer have been discovered to reside in quantum well states. ARPES was also used to measure the Fermi surface of these quantum well states, as well as their constant binding energy contours below the Fermi level E(F). The energy of the Fermi level and the size of the Fermi surface for these quantum well states could be controlled by varying the method of surface preparation. This is the first unambiguous observation that electrons in the InN accumulation layer are quantized and the first time the Fermi surface associated with such states has been measured.

P. D. C. King - One of the best experts on this subject based on the ideXlab platform.

  • valence band offset of the zno aln heterojunction determined by x ray Photoemission Spectroscopy
    Applied Physics Letters, 2008
    Co-Authors: Tim D. Veal, P. D. C. King, S. A. Hatfield, L R Bailey, C F Mcconville, Eric Frayssinet, Fabrice Semond, Bernard Martel, J. Zúñiga-pérez
    Abstract:

    The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray Photoemission Spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

  • inn gan valence band offset high resolution x ray Photoemission Spectroscopy measurements
    Physical Review B, 2008
    Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F Mcconville
    Abstract:

    High-resolution x-ray Photoemission Spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

  • inn gan valence band offset high resolution x ray Photoemission Spectroscopy measurements
    Physical Review B, 2008
    Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F Mcconville
    Abstract:

    High-resolution x-ray Photoemission Spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be $0.58\ifmmode\pm\else\textpm\fi{}0.08\text{ }\text{eV}$. This is discussed within the context of previous measurements and calculations and is in agreement with the value of $0.52\ifmmode\pm\else\textpm\fi{}0.14\text{ }\text{eV}$ determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of $2.22\ifmmode\pm\else\textpm\fi{}0.10\text{ }\text{eV}$.

Hiroyuki Yoshida - One of the best experts on this subject based on the ideXlab platform.

  • principle and application of low energy inverse Photoemission Spectroscopy a new method for measuring unoccupied states of organic semiconductors
    Journal of Electron Spectroscopy and Related Phenomena, 2015
    Co-Authors: Hiroyuki Yoshida
    Abstract:

    Abstract Information about the unoccupied states is crucial to both fundamental and applied physics of organic semiconductors. However, there were no available experimental methods that meet the requirement of such research. In this review, we describe a new experimental method to examine the unoccupied states, called low-energy inverse Photoemission Spectroscopy (LEIPS). An electron having the kinetic energy lower than the damage threshold of organic molecules is introduced to a sample film, and an emitted photon in the near-ultraviolet range is detected with high resolution and sensitivity. Unlike the previous inverse Photoemission Spectroscopy, the sample damage is negligible and the overall resolution is a factor of two improved to 0.25 eV. Using LEIPS, electron affinity of organic semiconductor can be determined with the same precision as Photoemission Spectroscopy for ionization energy. The instruments including an electron source and photon detectors as well as application to organic semiconductors are presented.

  • note low energy inverse Photoemission Spectroscopy apparatus
    Review of Scientific Instruments, 2014
    Co-Authors: Hiroyuki Yoshida
    Abstract:

    An apparatus for the low-energy inverse Photoemission Spectroscopy is described. In this technique, low energy electron having kinetic energy below 4 eV is incident to the sample and detect the emitted photons in the near ultraviolet range (below 5 eV, longer than 250 nm) to investigate the unoccupied states of the solid materials. Compared with the prototype apparatus reported previously [H. Yoshida, Chem. Phys. Lett. 539–540, 180–185 (2012)], the collection efficiency of photons is improved by a factor of four and practically any conductive substrates can be used. The overall resolution is 0.27 eV.

  • electron affinity of pentacene thin film studied by radiation damage free inverse Photoemission Spectroscopy
    Applied Physics Letters, 2013
    Co-Authors: Weining Han, Hiroyuki Yoshida, Nobuo Ueno, Satoshi Kera
    Abstract:

    The electron affinity of pentacene thin films has been evaluated during the last decades, but it is still under controversial due to varieties of film quality and radiation damages of the films introduced during inverse Photoemission Spectroscopy (IPES) experiment together with insufficient energy resolution of the instruments. We employed the near-ultraviolet IPES with a better energy resolution 0.27 ∼ 0.32 eV and using lower energy electron beams (0 eV ≤ Ei ≤ 4.9 eV) to study the unoccupied states of pentacene thin film. Due to a large mean-free-path of the electron in this energy region, the threshold electron affinity of the bulk of pentacene film was precisely determined to be 2.70 ± 0.03 eV. Using the threshold ionization energy of 4.90 ± 0.05 eV determined by ultraviolet Photoemission Spectroscopy, the band-gap energy of the pentacene film is obtained to be 2.20 ± 0.06 eV.

  • near ultraviolet inverse Photoemission Spectroscopy using ultra low energy electrons
    Chemical Physics Letters, 2012
    Co-Authors: Hiroyuki Yoshida
    Abstract:

    Abstract In previous inverse Photoemission Spectroscopy (IPES) experiments, either X-ray ( hν  > 1 keV) or vacuum ultraviolet ( hν ≈  10 eV) photons were detected following the injection of electrons with energies of 10–1000 eV into solid materials. Here, we demonstrate IPES in the near-ultraviolet range ( hν

  • unoccupied electronic states in a hexatriacontane thin film studied by inverse Photoemission Spectroscopy
    Chemical Physics Letters, 2002
    Co-Authors: Kiyohiko Tsutsumi, Hiroyuki Yoshida, Naoki Sato
    Abstract:

    Abstract The electronic structure of low-lying unoccupied electronic states in a hexatriacontane ( n -C 36 H 74 ) thin film was directly observed using inverse Photoemission Spectroscopy (IPES). In the IPE measurements, it was confirmed that the hexatriacontane thin film is easily degraded by electron irradiation. Therefore by reducing the current density of the incident electrons gradually we finally obtained a reliable IPE spectrum free from radiation damage and/or surface charging. As a result, we conclude the IPE spectrum reported by Dudde and Reihl was influenced by radiation damage. The reliable spectrum shows two features near the vacuum level: they were not resolved in the reported spectrum. Further, it is compared with the reported results from other electron spectroscopies and theoretical calculations concerning the unoccupied electronic states in long chain alkanes.

L R Bailey - One of the best experts on this subject based on the ideXlab platform.

  • valence band offset of the zno aln heterojunction determined by x ray Photoemission Spectroscopy
    Applied Physics Letters, 2008
    Co-Authors: Tim D. Veal, P. D. C. King, S. A. Hatfield, L R Bailey, C F Mcconville, Eric Frayssinet, Fabrice Semond, Bernard Martel, J. Zúñiga-pérez
    Abstract:

    The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray Photoemission Spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

  • inn gan valence band offset high resolution x ray Photoemission Spectroscopy measurements
    Physical Review B, 2008
    Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F Mcconville
    Abstract:

    High-resolution x-ray Photoemission Spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

  • inn gan valence band offset high resolution x ray Photoemission Spectroscopy measurements
    Physical Review B, 2008
    Co-Authors: P. D. C. King, C.e.a Kendrick, S.m.b D Steven M. Durbin, L R Bailey, Tim D. Veal, C F Mcconville
    Abstract:

    High-resolution x-ray Photoemission Spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be $0.58\ifmmode\pm\else\textpm\fi{}0.08\text{ }\text{eV}$. This is discussed within the context of previous measurements and calculations and is in agreement with the value of $0.52\ifmmode\pm\else\textpm\fi{}0.14\text{ }\text{eV}$ determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of $2.22\ifmmode\pm\else\textpm\fi{}0.10\text{ }\text{eV}$.