The Experts below are selected from a list of 1458 Experts worldwide ranked by ideXlab platform
Y. S. Wang - One of the best experts on this subject based on the ideXlab platform.
-
solar blind Photoresistors based on hbox mg _ 0 48 hbox zn _ 0 52 hbox o thin films grown on r hbox al _ 2 hbox o _ 3 substrates by radio frequency plasma assisted molecular beam epitaxy
IEEE Transactions on Electron Devices, 2012Co-Authors: Fengjuan Liu, L. Zhu, Haiqin Huang, Jianwei Zhao, Xiqing Zhang, Y. S. WangAbstract:Solar-blind Photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO Photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.
-
Solar-Blind Photoresistors Based on {Mg}_{0.48} {Zn}_{0.52}{O} Thin Films Grown on r{-Al}_{2} {O}_{3} Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
IEEE Transactions on Electron Devices, 2012Co-Authors: F. J. Liu, L. Zhu, H. Q. Huang, J. W. Zhao, X. Q. Zhang, Y. S. WangAbstract:Solar-blind Photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO Photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.
L. Zhu - One of the best experts on this subject based on the ideXlab platform.
-
solar blind Photoresistors based on hbox mg _ 0 48 hbox zn _ 0 52 hbox o thin films grown on r hbox al _ 2 hbox o _ 3 substrates by radio frequency plasma assisted molecular beam epitaxy
IEEE Transactions on Electron Devices, 2012Co-Authors: Fengjuan Liu, L. Zhu, Haiqin Huang, Jianwei Zhao, Xiqing Zhang, Y. S. WangAbstract:Solar-blind Photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO Photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.
-
Solar-Blind Photoresistors Based on {Mg}_{0.48} {Zn}_{0.52}{O} Thin Films Grown on r{-Al}_{2} {O}_{3} Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
IEEE Transactions on Electron Devices, 2012Co-Authors: F. J. Liu, L. Zhu, H. Q. Huang, J. W. Zhao, X. Q. Zhang, Y. S. WangAbstract:Solar-blind Photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO Photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.
F. J. Liu - One of the best experts on this subject based on the ideXlab platform.
-
Solar-Blind Photoresistors Based on {Mg}_{0.48} {Zn}_{0.52}{O} Thin Films Grown on r{-Al}_{2} {O}_{3} Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
IEEE Transactions on Electron Devices, 2012Co-Authors: F. J. Liu, L. Zhu, H. Q. Huang, J. W. Zhao, X. Q. Zhang, Y. S. WangAbstract:Solar-blind Photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO Photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.
Fengjuan Liu - One of the best experts on this subject based on the ideXlab platform.
-
solar blind Photoresistors based on hbox mg _ 0 48 hbox zn _ 0 52 hbox o thin films grown on r hbox al _ 2 hbox o _ 3 substrates by radio frequency plasma assisted molecular beam epitaxy
IEEE Transactions on Electron Devices, 2012Co-Authors: Fengjuan Liu, L. Zhu, Haiqin Huang, Jianwei Zhao, Xiqing Zhang, Y. S. WangAbstract:Solar-blind Photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO Photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.
A. V. Filatov - One of the best experts on this subject based on the ideXlab platform.
-
Radially biased Photoresistors with heteroepitaxial Cd x Hg 1−x Te structure
Journal of Optical Technology, 2019Co-Authors: A. V. Gusarov, A. V. Filatov, E. V. Susov, V. V. Karpov, P. D. GindinAbstract:We study the properties and parameters of compact photoresistor sensors with radial contacts made from CdxHg1−xTe (x≈0.212) heteroepitaxial structures with graded-base contacts. For a bias voltage corresponding to a voltage sensitivity of 1.5×105 V/W and a planar field of view of 14°, the maximum power output was 0.5 μW per element, while the minimum specific detection capability is 1.2×1011 cm⋅Hz1/2/W. The photoresistor design and resulting photoelectric parameters of the Photoresistors enable us to produce focal-plane photoresistor arrays with pixel counts of the order of 106 and use multiplexers for image signal processing.
-
Photoresistors with charge-carrier exclusion for the 8–16-μm spectral range, made from n-Cd x Hg 1-x Te heteroepitaxial structures
Journal of Optical Technology, 2018Co-Authors: A. V. Filatov, E. V. Susov, V. V. KarpovAbstract:The functioning of Photoresistors made from constant-composition n-CdxHg1−xTe (x=0.187–0.215) heteroepitaxial structures with variband layers obtained by molecular-beam epitaxy is studied in the nonequilibrium minority-carrier exclusion regime in a wide range of background radiation. The bias-voltage dependences of the electron concentration and charge-carrier lifetime in a 50×50 μm photoresistor pixel are determined at liquid-nitrogen temperature. It is established that the electron concentration in the exclusion regime decreases to a value close to the intrinsic charge-carrier concentration. A voltage sensitivity of more than 2.4×107 V/W and a specific detectivity of 5.3×1011 cm Hz1/2/W are obtained at 77 K and a planar viewing angle of 14° in the exclusion regime for Photoresistors made from x=0.203 structures. It is shown that it is promising to use the minority-carrier exclusion regime to create high-efficiency fast-response Photoresistors in the 16–17-μm spectral range, cooled no lower than liquid-nitrogen temperature.
-
Photoresistors with charge carrier exclusion for the 8 16 μm spectral range made from n cd x hg 1 x te heteroepitaxial structures
Journal of Optical Technology, 2018Co-Authors: A. V. Filatov, E. V. Susov, V. V. KarpovAbstract:The functioning of Photoresistors made from constant-composition n-CdxHg1−xTe (x=0.187–0.215) heteroepitaxial structures with variband layers obtained by molecular-beam epitaxy is studied in the nonequilibrium minority-carrier exclusion regime in a wide range of background radiation. The bias-voltage dependences of the electron concentration and charge-carrier lifetime in a 50×50 μm photoresistor pixel are determined at liquid-nitrogen temperature. It is established that the electron concentration in the exclusion regime decreases to a value close to the intrinsic charge-carrier concentration. A voltage sensitivity of more than 2.4×107 V/W and a specific detectivity of 5.3×1011 cm Hz1/2/W are obtained at 77 K and a planar viewing angle of 14° in the exclusion regime for Photoresistors made from x=0.203 structures. It is shown that it is promising to use the minority-carrier exclusion regime to create high-efficiency fast-response Photoresistors in the 16–17-μm spectral range, cooled no lower than liquid-nitrogen temperature.
-
Independent operation time of photodetectors of the (3—5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures
Journal of Communications Technology and Electronics, 2017Co-Authors: A. V. Filatov, E. V. Susov, V. V. Karpov, V. A. Zhilkin, S. P. Ljubchenko, N. S. Kusnezov, A. V. MarushchenkoAbstract:The time of independent operation tind of indium antimonide Photoresistors and photodiodes and Photoresistors based on CdхHg1–хTe (х ~ 0.3) heterostructures deeply cooled with a Joule–Thomson throttling system is investigated. The largest independent operation time (taut ≥ 28 s) was obtained for CdхHg1–хTe (х ~ 0.3) Photoresistors. Time tind of the Photoresistors and photodiodes is found to be related to the temperature of transition of the semiconductor materials from the impurity region to the intrinsic region. The possibility of increasing time tind of the photodetectors by optimizing the requirements for the characteristics of InSb and CdхHg1–хTe is discussed.
-
Photoresistors with the gray code on the CdxHg1 – xTe heteroepitaxial structures for a spectral interval of 2–11 μm with thermoelectric cooling
Journal of Communications Technology and Electronics, 2016Co-Authors: A. V. Filatov, E. V. Susov, V. V. Karpov, A. A. Gribanov, N. S. Kuznetsov, V. I. PetrenkoAbstract:Photoresistors with thermoelectric cooling of photosensitive elements are developed in the topology of the five-digit Gray code using the CdxHg1–xTe heteroepitaxial structures produced with the aid of molecular-beam epitaxy. The Photoresistors can be used to detect pulsed laser radiation with a wavelength of 10.6 μm. The dependence of the signal-to-noise ratio on the composition of the narrow-band-gap working layer of the epitaxial structure and the structure of the photoresistor is studied.