The Experts below are selected from a list of 2337 Experts worldwide ranked by ideXlab platform
Roberto Pizzoferrato - One of the best experts on this subject based on the ideXlab platform.
-
Single Frequency Thermal Diffusivity Measurements in Semiconductors by Photothermal Deflection Spectroscopy
Photoacoustic and Photothermal Phenomena III, 1992Co-Authors: F. Gasparrini, U. Zammit, M. Marinelli, Roberto Pizzoferrato, A. AgostiniAbstract:Absolute measurements of the thermal diffusivity of several semiconductors have been performed by the analysis of the Photothermal Deflection Spectroscopy phase spectra obtained at a single value of the modulation frequency. A simple procedure is presented which enables to work under the sample thermally thick condition thus improving the sensitivity of the measurements.
-
Surface states studies in semiconductors by Photothermal Deflection Spectroscopy
Journal of Applied Physics, 1991Co-Authors: U. Zammit, F. Gasparrini, M. Marinelli, Roberto Pizzoferrato, F. Scudieri, S. MartellucciAbstract:A method based on the analysis of both the amplitude and phase of the Photothermal Deflection Spectroscopy signal which enables one to locate surface states on the front or rear surface of semiconductor wafers and to measure their absorption. The procedure also allows the determination of the sample thermal conductivity.
-
Photothermal Deflection Spectroscopy study of defects in semi-insulating GaAs
Applied Physics A, 1991Co-Authors: U. Zammit, F. Gasparrini, M. Marinelli, Roberto Pizzoferrato, F. Scudieri, S. MartellucciAbstract:Subgab absorption measurements carried out by Photothermal Deflection Spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage.
-
Surface states and buried interface states studies in semiconductors by Photothermal Deflection Spectroscopy
Journal of Applied Physics, 1991Co-Authors: U. Zammit, M. Marinelli, Roberto PizzoferratoAbstract:A method is presented which, through the simultaneous analysis of the Photothermal Deflection Spectroscopy (PDS) signal amplitude and phase spectra, enables to detect surface states and buried interface states and to measure their absorption. A theoretical model for the PDS signal suitable for the present approach has been developed and the measurements were performed on single crystalline GaAs wafers with ion‐implanted layers on the front surface or buried beneath the front surface.
U. Zammit - One of the best experts on this subject based on the ideXlab platform.
-
Single Frequency Thermal Diffusivity Measurements in Semiconductors by Photothermal Deflection Spectroscopy
Photoacoustic and Photothermal Phenomena III, 1992Co-Authors: F. Gasparrini, U. Zammit, M. Marinelli, Roberto Pizzoferrato, A. AgostiniAbstract:Absolute measurements of the thermal diffusivity of several semiconductors have been performed by the analysis of the Photothermal Deflection Spectroscopy phase spectra obtained at a single value of the modulation frequency. A simple procedure is presented which enables to work under the sample thermally thick condition thus improving the sensitivity of the measurements.
-
Surface states studies in semiconductors by Photothermal Deflection Spectroscopy
Journal of Applied Physics, 1991Co-Authors: U. Zammit, F. Gasparrini, M. Marinelli, Roberto Pizzoferrato, F. Scudieri, S. MartellucciAbstract:A method based on the analysis of both the amplitude and phase of the Photothermal Deflection Spectroscopy signal which enables one to locate surface states on the front or rear surface of semiconductor wafers and to measure their absorption. The procedure also allows the determination of the sample thermal conductivity.
-
Photothermal Deflection Spectroscopy study of defects in semi-insulating GaAs
Applied Physics A, 1991Co-Authors: U. Zammit, F. Gasparrini, M. Marinelli, Roberto Pizzoferrato, F. Scudieri, S. MartellucciAbstract:Subgab absorption measurements carried out by Photothermal Deflection Spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage.
-
Surface states and buried interface states studies in semiconductors by Photothermal Deflection Spectroscopy
Journal of Applied Physics, 1991Co-Authors: U. Zammit, M. Marinelli, Roberto PizzoferratoAbstract:A method is presented which, through the simultaneous analysis of the Photothermal Deflection Spectroscopy (PDS) signal amplitude and phase spectra, enables to detect surface states and buried interface states and to measure their absorption. A theoretical model for the PDS signal suitable for the present approach has been developed and the measurements were performed on single crystalline GaAs wafers with ion‐implanted layers on the front surface or buried beneath the front surface.
M. Marinelli - One of the best experts on this subject based on the ideXlab platform.
-
Single Frequency Thermal Diffusivity Measurements in Semiconductors by Photothermal Deflection Spectroscopy
Photoacoustic and Photothermal Phenomena III, 1992Co-Authors: F. Gasparrini, U. Zammit, M. Marinelli, Roberto Pizzoferrato, A. AgostiniAbstract:Absolute measurements of the thermal diffusivity of several semiconductors have been performed by the analysis of the Photothermal Deflection Spectroscopy phase spectra obtained at a single value of the modulation frequency. A simple procedure is presented which enables to work under the sample thermally thick condition thus improving the sensitivity of the measurements.
-
Surface states studies in semiconductors by Photothermal Deflection Spectroscopy
Journal of Applied Physics, 1991Co-Authors: U. Zammit, F. Gasparrini, M. Marinelli, Roberto Pizzoferrato, F. Scudieri, S. MartellucciAbstract:A method based on the analysis of both the amplitude and phase of the Photothermal Deflection Spectroscopy signal which enables one to locate surface states on the front or rear surface of semiconductor wafers and to measure their absorption. The procedure also allows the determination of the sample thermal conductivity.
-
Photothermal Deflection Spectroscopy study of defects in semi-insulating GaAs
Applied Physics A, 1991Co-Authors: U. Zammit, F. Gasparrini, M. Marinelli, Roberto Pizzoferrato, F. Scudieri, S. MartellucciAbstract:Subgab absorption measurements carried out by Photothermal Deflection Spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage.
-
Surface states and buried interface states studies in semiconductors by Photothermal Deflection Spectroscopy
Journal of Applied Physics, 1991Co-Authors: U. Zammit, M. Marinelli, Roberto PizzoferratoAbstract:A method is presented which, through the simultaneous analysis of the Photothermal Deflection Spectroscopy (PDS) signal amplitude and phase spectra, enables to detect surface states and buried interface states and to measure their absorption. A theoretical model for the PDS signal suitable for the present approach has been developed and the measurements were performed on single crystalline GaAs wafers with ion‐implanted layers on the front surface or buried beneath the front surface.
Andre Knoesen - One of the best experts on this subject based on the ideXlab platform.
-
Absorption of polymers for optical waveguide applications measured by Photothermal Deflection Spectroscopy
Linear and Nonlinear Optics of Organic Materials, 2001Co-Authors: Andre KnoesenAbstract:A technique based on Photothermal Deflection Spectroscopy has been developed for measuring the absolute absorption of polymers. The technique utilizes the frequency dependence measurement of the Deflection signals to retrieve polymers' thermal properties and experimental parameters that are necessary to convert the Deflection signals to the absolute absorption coefficients. All the measurements are done on the same experimental setup and the same sample without the need of obtaining either the materials' thermal properties or the reference absorption coefficients from other sources. This technique has been applied to several polymers and the results are reported.
-
Absolute absorption measurements of polymer films for optical waveguide applications by Photothermal Deflection Spectroscopy
Journal of Polymer Science Part B: Polymer Physics, 2001Co-Authors: Andre KnoesenAbstract:A self-contained experimental technique is proposed for measuring the absolute optical absorption spectra, thermal diffusivity, and thermal conductivity of polymer thin films. The technique is based on Photothermal Deflection Spectroscopy and provides sensitivity that is high enough to quantify the very small optical absorption losses in polymer films used for optical waveguide applications. The capabilities of the technique are demonstrated with measurements performed on thin films of poly(methyl methacrylate) and a fluorinated polymer (CYTOP). An error analysis is presented, and the factors are discussed that influence the accuracy of the technique. © 2001 John Wiley & Sons, Inc. J Polym Sci Part B: Polym Phys 39: 2717–2726, 2001
-
Absolute absorption measurements in polymer films using Photothermal Deflection Spectroscopy
Organic Photorefractives Photoreceptors Waveguides and Fibers, 1999Co-Authors: Andre KnoesenAbstract:The weak absorption of waveguide materials can be measured by Photothermal Deflection Spectroscopy (PDS) with two orders of magnitude or higher sensitivity than conventional UV-VIS absorption Spectroscopy. While it is easy to obtain relative absorption spectra for thin polymer films with PDS, extracting absolute absorption coefficients is more involved. The PDS measured signals depend on both thermal and optical absorption properties of materials. Knowledge of thermal properties is necessary to extract absorption coefficients. We report a methodology to obtain from PDS independently the thermal properties and absolute absorption coefficients.
S. Martellucci - One of the best experts on this subject based on the ideXlab platform.
-
Surface states studies in semiconductors by Photothermal Deflection Spectroscopy
Journal of Applied Physics, 1991Co-Authors: U. Zammit, F. Gasparrini, M. Marinelli, Roberto Pizzoferrato, F. Scudieri, S. MartellucciAbstract:A method based on the analysis of both the amplitude and phase of the Photothermal Deflection Spectroscopy signal which enables one to locate surface states on the front or rear surface of semiconductor wafers and to measure their absorption. The procedure also allows the determination of the sample thermal conductivity.
-
Photothermal Deflection Spectroscopy study of defects in semi-insulating GaAs
Applied Physics A, 1991Co-Authors: U. Zammit, F. Gasparrini, M. Marinelli, Roberto Pizzoferrato, F. Scudieri, S. MartellucciAbstract:Subgab absorption measurements carried out by Photothermal Deflection Spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage.