The Experts below are selected from a list of 327 Experts worldwide ranked by ideXlab platform
Tailiang Guo - One of the best experts on this subject based on the ideXlab platform.
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High-Performance Vertical Organic Phototransistors Enhanced by Ferroelectrics.
ACS applied materials & interfaces, 2020Co-Authors: Qizhen Chen, Dengxiao Lai, Yujie Yan, Yaqian Liu, Huaan Zeng, Huipeng Chen, Tailiang GuoAbstract:Organic Phototransistors with high sensitivity and responsivity to light irradiance have great potential applications in national defense, meteorology, industrial manufacturing, and medical security. However, undesired dark current and photoresponsivity limit their practical applications. Here, a novel vertical organic phototransistor combined with ferroelectric materials is developed. The device structure has nanometer channel length, which can effectively separate photogenerated carriers and reduce the probability of carrier recombination and defect scattering, thus improving the device performance of Phototransistors. Moreover, by inserting the poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) ferroelectric layer, the Schottky barrier at the interface between the semiconductor and source can be adjusted by the polarization of the external electric field, which can effectively reduce the dark current of the phototransistor to further improve the device performance. Therefore, our Phototransistors exhibit a high photoresponsivity of more than 5.7 × 105A/W, an outstanding detectivity of 1.15 × 1018 Jones, and an excellent photosensitivity of 5 × 107 under 760 nm light illumination, which are better than those of conventional lateral organic Phototransistors. This work provides a new approach for the development of high-performance Phototransistors, which opens a new pathway for organic Phototransistors in practical application.
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High performance n-type vertical organic Phototransistors
Organic Electronics, 2019Co-Authors: Kaiheng Yeliu, Qizhen Chen, Yujie Yan, Huipeng Chen, Jianfeng Zhong, Xiumei Wang, Tailiang GuoAbstract:Abstract In this manuscript, a solution-processed n-type organic phototransistor based on vertical structure thin-film transistors was proposed. Due to the vertical structure and short channel length (≈130 nm), the transistors exhibited excellent current density (15.4 mA/cm2) with high Ion/Ioff ratio (up to 105). On account of this structure, the face-on π-π stacking of P(NDI2OD-T2) was aligned with the charge transport direction, which facilitated charge transfer from source to drain electrode. Moreover, n-type organic Phototransistors based on vertical thin-film transistors were demonstrated for the first time, in which the active layer was protected by the source-drain electrodes, resulting in the improvement of the stability of the device. Due to the nanoscale channel, efficient separation of electron-hole pairs and quick charge transfer can be achieved. Hence, high-performance n-type phototransistor was obtained with responsivity of 34.8 A/W, photosensitivity of 4.78 × 104, detectivity of 3.95 × 1013 Jones and external quantum efficiency up to 1.1 × 104% under 400 nm illumination with a light intensity of 200 μW cm−2, which was much better than those reported n-type organic Phototransistors. This work provided a strategy for the fabrication of high performance n-type organic phototransistor, which paved the way for its future application in the next-generation organic optoelectronics.
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High-Performance Organic Phototransistors With Vertical Structure Design
IEEE Transactions on Electron Devices, 2019Co-Authors: Guocheng Zhang, Qizhen Chen, Yujie Yan, Huipeng Chen, Jianfeng Zhong, Tailiang GuoAbstract:In this paper, a novel vertical phototransistor was reported and compared with planar Phototransistors for the first time. As compared with the planar Phototransistors, the vertical ones exhibited much better photoelectric performance, which is attributed to an ultrashort photo-generated holes transfer distance and a stronger excitons dissociating electrical field due to their ultrashort channel length (tens of nanometers). Moreover, in order to examine the transport and trapping of different carrier charges separately, the impact of [6,6]-phenyl C61-butyric acid methyl ester (PCBM) dopant on the performance of planar and vertical Phototransistors was investigated. The vertical devices exhibited an ultrahigh responsivity (~6600 A/W) as well as an excellent detectivity ( $\sim 7\times 10^{15}~\text{Jones}$ ) and a fast photoresponse (rise time of 0.28 s), whereas slight changes were observed in the planar ones with doping of PCBM. The high performance of the blend vertical Phototransistors is due to the trapping of the photo-generated electrons with PCBM and the effective transport of holes due to the ultrashort channel length. This paper provided a promising pathway for low-cost, high-performance Phototransistors.
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High Performance Flexible Organic Phototransistors with Ultrashort Channel Length
ACS Photonics, 2018Co-Authors: Jianfeng Zhong, Huipeng Chen, Shuqiong Lan, Yuan Fang, Tailiang GuoAbstract:Organic Phototransistors with high responsivity and sensitivity to light irradiance have great potential applications in environmental monitoring, space exploration, security, image sensors and healthcare systems. In this manuscript, a novel polymer bulk heterojunction field effect phototransistor with ultrashort channel length (tens of nanometers) and ultrahigh sensitivity to visible light was proposed. Due to the nanoscale channel and bulk heterojunction structure, a high-performance phototransistor with high responsivity of 750 A/W, photosensitivity of 1.0 × 106, and detectivity as high as 4.54 × 1015 Jones was demonstrated under 720 nm light illumination with 0.1 mW/cm2 intensity, which was even better that those lateral organic Phototransistors. Moreover, organic Phototransistors with ultrashort channel length were investigated for the first time on a flexible substrate, which exhibited outstanding mechanical flexibility due to their unique designs. Further investigation of the correlation between th...
Qizhen Chen - One of the best experts on this subject based on the ideXlab platform.
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High-Performance Vertical Organic Phototransistors Enhanced by Ferroelectrics.
ACS applied materials & interfaces, 2020Co-Authors: Qizhen Chen, Dengxiao Lai, Yujie Yan, Yaqian Liu, Huaan Zeng, Huipeng Chen, Tailiang GuoAbstract:Organic Phototransistors with high sensitivity and responsivity to light irradiance have great potential applications in national defense, meteorology, industrial manufacturing, and medical security. However, undesired dark current and photoresponsivity limit their practical applications. Here, a novel vertical organic phototransistor combined with ferroelectric materials is developed. The device structure has nanometer channel length, which can effectively separate photogenerated carriers and reduce the probability of carrier recombination and defect scattering, thus improving the device performance of Phototransistors. Moreover, by inserting the poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) ferroelectric layer, the Schottky barrier at the interface between the semiconductor and source can be adjusted by the polarization of the external electric field, which can effectively reduce the dark current of the phototransistor to further improve the device performance. Therefore, our Phototransistors exhibit a high photoresponsivity of more than 5.7 × 105A/W, an outstanding detectivity of 1.15 × 1018 Jones, and an excellent photosensitivity of 5 × 107 under 760 nm light illumination, which are better than those of conventional lateral organic Phototransistors. This work provides a new approach for the development of high-performance Phototransistors, which opens a new pathway for organic Phototransistors in practical application.
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High performance n-type vertical organic Phototransistors
Organic Electronics, 2019Co-Authors: Kaiheng Yeliu, Qizhen Chen, Yujie Yan, Huipeng Chen, Jianfeng Zhong, Xiumei Wang, Tailiang GuoAbstract:Abstract In this manuscript, a solution-processed n-type organic phototransistor based on vertical structure thin-film transistors was proposed. Due to the vertical structure and short channel length (≈130 nm), the transistors exhibited excellent current density (15.4 mA/cm2) with high Ion/Ioff ratio (up to 105). On account of this structure, the face-on π-π stacking of P(NDI2OD-T2) was aligned with the charge transport direction, which facilitated charge transfer from source to drain electrode. Moreover, n-type organic Phototransistors based on vertical thin-film transistors were demonstrated for the first time, in which the active layer was protected by the source-drain electrodes, resulting in the improvement of the stability of the device. Due to the nanoscale channel, efficient separation of electron-hole pairs and quick charge transfer can be achieved. Hence, high-performance n-type phototransistor was obtained with responsivity of 34.8 A/W, photosensitivity of 4.78 × 104, detectivity of 3.95 × 1013 Jones and external quantum efficiency up to 1.1 × 104% under 400 nm illumination with a light intensity of 200 μW cm−2, which was much better than those reported n-type organic Phototransistors. This work provided a strategy for the fabrication of high performance n-type organic phototransistor, which paved the way for its future application in the next-generation organic optoelectronics.
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High-Performance Organic Phototransistors With Vertical Structure Design
IEEE Transactions on Electron Devices, 2019Co-Authors: Guocheng Zhang, Qizhen Chen, Yujie Yan, Huipeng Chen, Jianfeng Zhong, Tailiang GuoAbstract:In this paper, a novel vertical phototransistor was reported and compared with planar Phototransistors for the first time. As compared with the planar Phototransistors, the vertical ones exhibited much better photoelectric performance, which is attributed to an ultrashort photo-generated holes transfer distance and a stronger excitons dissociating electrical field due to their ultrashort channel length (tens of nanometers). Moreover, in order to examine the transport and trapping of different carrier charges separately, the impact of [6,6]-phenyl C61-butyric acid methyl ester (PCBM) dopant on the performance of planar and vertical Phototransistors was investigated. The vertical devices exhibited an ultrahigh responsivity (~6600 A/W) as well as an excellent detectivity ( $\sim 7\times 10^{15}~\text{Jones}$ ) and a fast photoresponse (rise time of 0.28 s), whereas slight changes were observed in the planar ones with doping of PCBM. The high performance of the blend vertical Phototransistors is due to the trapping of the photo-generated electrons with PCBM and the effective transport of holes due to the ultrashort channel length. This paper provided a promising pathway for low-cost, high-performance Phototransistors.
Junseok Heo - One of the best experts on this subject based on the ideXlab platform.
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cdse zns quantum dot encapsulated mos 2 phototransistor for enhanced radiation hardness
Scientific Reports, 2019Co-Authors: Jinwu Park, Geonwook Yoo, Junseok HeoAbstract:Notable progress achieved in studying MoS2 based Phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS2 Phototransistors in harsh environments is highly required. Here, we investigate effects of gamma rays on the characteristics of MoS2 Phototransistors and improve its radiation hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irradiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irradiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2 phototransistor.
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CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness
Nature Publishing Group, 2019Co-Authors: Jinwu Park, Geonwook Yoo, Junseok HeoAbstract:Abstract Notable progress achieved in studying MoS2 based Phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS2 Phototransistors in harsh environments is highly required. Here, we investigate effects of gamma rays on the characteristics of MoS2 Phototransistors and improve its radiation hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irradiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irradiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2 phototransistor
Yujie Yan - One of the best experts on this subject based on the ideXlab platform.
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High-Performance Vertical Organic Phototransistors Enhanced by Ferroelectrics.
ACS applied materials & interfaces, 2020Co-Authors: Qizhen Chen, Dengxiao Lai, Yujie Yan, Yaqian Liu, Huaan Zeng, Huipeng Chen, Tailiang GuoAbstract:Organic Phototransistors with high sensitivity and responsivity to light irradiance have great potential applications in national defense, meteorology, industrial manufacturing, and medical security. However, undesired dark current and photoresponsivity limit their practical applications. Here, a novel vertical organic phototransistor combined with ferroelectric materials is developed. The device structure has nanometer channel length, which can effectively separate photogenerated carriers and reduce the probability of carrier recombination and defect scattering, thus improving the device performance of Phototransistors. Moreover, by inserting the poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) ferroelectric layer, the Schottky barrier at the interface between the semiconductor and source can be adjusted by the polarization of the external electric field, which can effectively reduce the dark current of the phototransistor to further improve the device performance. Therefore, our Phototransistors exhibit a high photoresponsivity of more than 5.7 × 105A/W, an outstanding detectivity of 1.15 × 1018 Jones, and an excellent photosensitivity of 5 × 107 under 760 nm light illumination, which are better than those of conventional lateral organic Phototransistors. This work provides a new approach for the development of high-performance Phototransistors, which opens a new pathway for organic Phototransistors in practical application.
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High performance n-type vertical organic Phototransistors
Organic Electronics, 2019Co-Authors: Kaiheng Yeliu, Qizhen Chen, Yujie Yan, Huipeng Chen, Jianfeng Zhong, Xiumei Wang, Tailiang GuoAbstract:Abstract In this manuscript, a solution-processed n-type organic phototransistor based on vertical structure thin-film transistors was proposed. Due to the vertical structure and short channel length (≈130 nm), the transistors exhibited excellent current density (15.4 mA/cm2) with high Ion/Ioff ratio (up to 105). On account of this structure, the face-on π-π stacking of P(NDI2OD-T2) was aligned with the charge transport direction, which facilitated charge transfer from source to drain electrode. Moreover, n-type organic Phototransistors based on vertical thin-film transistors were demonstrated for the first time, in which the active layer was protected by the source-drain electrodes, resulting in the improvement of the stability of the device. Due to the nanoscale channel, efficient separation of electron-hole pairs and quick charge transfer can be achieved. Hence, high-performance n-type phototransistor was obtained with responsivity of 34.8 A/W, photosensitivity of 4.78 × 104, detectivity of 3.95 × 1013 Jones and external quantum efficiency up to 1.1 × 104% under 400 nm illumination with a light intensity of 200 μW cm−2, which was much better than those reported n-type organic Phototransistors. This work provided a strategy for the fabrication of high performance n-type organic phototransistor, which paved the way for its future application in the next-generation organic optoelectronics.
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High-Performance Organic Phototransistors With Vertical Structure Design
IEEE Transactions on Electron Devices, 2019Co-Authors: Guocheng Zhang, Qizhen Chen, Yujie Yan, Huipeng Chen, Jianfeng Zhong, Tailiang GuoAbstract:In this paper, a novel vertical phototransistor was reported and compared with planar Phototransistors for the first time. As compared with the planar Phototransistors, the vertical ones exhibited much better photoelectric performance, which is attributed to an ultrashort photo-generated holes transfer distance and a stronger excitons dissociating electrical field due to their ultrashort channel length (tens of nanometers). Moreover, in order to examine the transport and trapping of different carrier charges separately, the impact of [6,6]-phenyl C61-butyric acid methyl ester (PCBM) dopant on the performance of planar and vertical Phototransistors was investigated. The vertical devices exhibited an ultrahigh responsivity (~6600 A/W) as well as an excellent detectivity ( $\sim 7\times 10^{15}~\text{Jones}$ ) and a fast photoresponse (rise time of 0.28 s), whereas slight changes were observed in the planar ones with doping of PCBM. The high performance of the blend vertical Phototransistors is due to the trapping of the photo-generated electrons with PCBM and the effective transport of holes due to the ultrashort channel length. This paper provided a promising pathway for low-cost, high-performance Phototransistors.
Wei-chou Hsu - One of the best experts on this subject based on the ideXlab platform.
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Amorphous TiO 2 -Based Thin-Film Phototransistor
IEEE Electron Device Letters, 2017Co-Authors: Han-yin Liu, Ruei-chin Huang, Ching-sung Lee, Wei-chou HsuAbstract:This letter presents amorphous TiO2-based thin-film Phototransistors whose structures are designed for front-side and back-side illumination. The channel and gate dielectric layers are deposited by ultrasonic spray pyrolysis deposition, which is a non-vacuum, cost-effective, thin-film deposition technique similar to chemical vapor deposition. The material structure, chemical composition, and optical characteristics of the amorphous TiO2 thin film are analyzed. The phototransistor shows the typical current–voltage ( ${I}$ – ${V}$ ) characteristics of field-effect transistors. It demonstrates a UV-to-visible rejection ratio of approximately 70 –80, a high responsivity of 13.64 A/W, and a high detectivity of $1.64\times 10^{12}$ Jones. The phototransistor can be operated in the high-photo-responsivity and high-detectivity modes by biasing at different quiescent points.
