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K Rajanna - One of the best experts on this subject based on the ideXlab platform.
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evaluation of transverse Piezoelectric Coefficient of zno thin films deposited on different flexible substrates a comparative study on the vibration sensing performance
ACS Applied Materials & Interfaces, 2014Co-Authors: Sudeep Joshi, M M Nayak, K RajannaAbstract:We report on the systematic comparative study of highly c-axis oriented and crystalline Piezoelectric ZnO thin films deposited on four different flexible substrates for vibration sensing application. The flexible substrates employed for present experimental study were namely a metal alloy (Phynox), metal (aluminum), polyimide (Kapton), and polyester (Mylar). ZnO thin films were deposited by an RF reactive magnetron sputtering technique. ZnO thin films of similar thicknesses of 700 +/- 30 nm were deposited on four different flexible substrates to have proper comparative studies. The crystallinity, surface morphology, chemical composition, and roughness of ZnO thin films were evaluated by respective material characterization techniques. The transverse Piezoelectric Coefficient (d(31)) value for assessing the Piezoelectric property of ZnO thin films on different flexible substrates was measured by a four-point bending method. ZnO thin films deposited on Phynox alloy substrate showed relatively better material characterization results and a higher Piezoelectric d(31) Coefficient value as compared to ZnO films on metal and polymer substrates. In order to experimentally verify the above observations, vibration sensing studies were performed. As expected, the ZnO thin film deposited on Phynox alloy substrate showed better vibration sensing performance. It has generated the highest peak to peak output voltage amplitude of 256 mV as compared to that of aluminum (224 mV), Kapton (144 mV), and Mylar (46 mV). Therefore, metal alloy flexible substrate proves to be a more suitable, advantageous, and versatile choice for integrating ZnO thin films as compared to metal and polymer flexible substrates for vibration sensing applications. The present experimental study is extremely important and helpful for the selection of a suitable flexible substrate for various applications in the field of sensor and actuator technology.
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effect of post deposition annealing on transverse Piezoelectric Coefficient and vibration sensing performance of zno thin films
Applied Surface Science, 2014Co-Authors: Sudeep Joshi, M M Nayak, K RajannaAbstract:The present experimental study investigates the influence of post-deposition annealing on the transverse Piezoelectric Coefficient (d(31)) value of ZnO thin films deposited on a flexible metal alloy substrate, and its relationship with the vibration sensing performance. Highly c-axis oriented and crystalline ZnO thin films were deposited on flexible Phynox alloy substrate via radio frequency (RF) reactive magnetron sputtering. ZnO thin film samples were annealed at different temperatures ranging from 100 degrees C to 500 degrees C, resulting in the temperature of 300 degrees C determined as the optimum annealing temperature. The crystallinity, morphology, microstructure, and rms surface roughness of annealed ZnO thin films were systematically investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM), respectively. The Piezoelectric d(31) Coefficient value was measured by 4-point bending method. ZnO thin film annealed at 300 degrees C was highly c-axis oriented, crystalline, possesses fine surface morphology with uniformity in the grain size. This film showed higher d(31) Coefficient value of 7.2 pm V-1. A suitable in-house designed and developed experimental set-up, for evaluating the vibration sensing performance of annealed ZnO thin films is discussed. As expected the ZnO thin film annealed at 300 degrees C showed relatively better result for vibration sensing studies. It generates comparatively higher peak output voltage of 147 mV, due to improved structural and morphological properties, and higher Piezoelectric d(31) Coefficient value. (C) 2014 Elsevier B. V. All rights reserved.
Sudeep Joshi - One of the best experts on this subject based on the ideXlab platform.
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evaluation of transverse Piezoelectric Coefficient of zno thin films deposited on different flexible substrates a comparative study on the vibration sensing performance
ACS Applied Materials & Interfaces, 2014Co-Authors: Sudeep Joshi, M M Nayak, K RajannaAbstract:We report on the systematic comparative study of highly c-axis oriented and crystalline Piezoelectric ZnO thin films deposited on four different flexible substrates for vibration sensing application. The flexible substrates employed for present experimental study were namely a metal alloy (Phynox), metal (aluminum), polyimide (Kapton), and polyester (Mylar). ZnO thin films were deposited by an RF reactive magnetron sputtering technique. ZnO thin films of similar thicknesses of 700 +/- 30 nm were deposited on four different flexible substrates to have proper comparative studies. The crystallinity, surface morphology, chemical composition, and roughness of ZnO thin films were evaluated by respective material characterization techniques. The transverse Piezoelectric Coefficient (d(31)) value for assessing the Piezoelectric property of ZnO thin films on different flexible substrates was measured by a four-point bending method. ZnO thin films deposited on Phynox alloy substrate showed relatively better material characterization results and a higher Piezoelectric d(31) Coefficient value as compared to ZnO films on metal and polymer substrates. In order to experimentally verify the above observations, vibration sensing studies were performed. As expected, the ZnO thin film deposited on Phynox alloy substrate showed better vibration sensing performance. It has generated the highest peak to peak output voltage amplitude of 256 mV as compared to that of aluminum (224 mV), Kapton (144 mV), and Mylar (46 mV). Therefore, metal alloy flexible substrate proves to be a more suitable, advantageous, and versatile choice for integrating ZnO thin films as compared to metal and polymer flexible substrates for vibration sensing applications. The present experimental study is extremely important and helpful for the selection of a suitable flexible substrate for various applications in the field of sensor and actuator technology.
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effect of post deposition annealing on transverse Piezoelectric Coefficient and vibration sensing performance of zno thin films
Applied Surface Science, 2014Co-Authors: Sudeep Joshi, M M Nayak, K RajannaAbstract:The present experimental study investigates the influence of post-deposition annealing on the transverse Piezoelectric Coefficient (d(31)) value of ZnO thin films deposited on a flexible metal alloy substrate, and its relationship with the vibration sensing performance. Highly c-axis oriented and crystalline ZnO thin films were deposited on flexible Phynox alloy substrate via radio frequency (RF) reactive magnetron sputtering. ZnO thin film samples were annealed at different temperatures ranging from 100 degrees C to 500 degrees C, resulting in the temperature of 300 degrees C determined as the optimum annealing temperature. The crystallinity, morphology, microstructure, and rms surface roughness of annealed ZnO thin films were systematically investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM), respectively. The Piezoelectric d(31) Coefficient value was measured by 4-point bending method. ZnO thin film annealed at 300 degrees C was highly c-axis oriented, crystalline, possesses fine surface morphology with uniformity in the grain size. This film showed higher d(31) Coefficient value of 7.2 pm V-1. A suitable in-house designed and developed experimental set-up, for evaluating the vibration sensing performance of annealed ZnO thin films is discussed. As expected the ZnO thin film annealed at 300 degrees C showed relatively better result for vibration sensing studies. It generates comparatively higher peak output voltage of 147 mV, due to improved structural and morphological properties, and higher Piezoelectric d(31) Coefficient value. (C) 2014 Elsevier B. V. All rights reserved.
Susan Troliermckinstry - One of the best experts on this subject based on the ideXlab platform.
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wafer mapping of the transverse Piezoelectric Coefficient e31 f using the wafer flexure technique with sputter deposited pt strain gauges
Sensors and Actuators A-physical, 2012Co-Authors: Rudeger H T Wilke, Paul Moses, Pierre Jousse, C B Yeager, Susan TroliermckinstryAbstract:Abstract Measurement of the transverse Piezoelectric Coefficient ( e 31,f ) in thin films is crucial for the development of microfabricated sensors, actuators, and transducers. Here, a method is described such that lithographically defined strain gauges enable non-destructive, position-dependent characterization of e 31,f in conjunction with the wafer flexure technique. Measurements of 100 nm thick Pt gauges deposited on 1 μm thick PbZr 0.52 Ti 0.48 O 3 thin films yield gauge factors of 6.24, with a gauge-to-gauge variation that is 5% of this value. The system allows for simultaneous measurement of the charge and strain, improving the overall accuracy of measurement. The small footprint of the combined strain gauge array/electrode pattern used for determining e 31,f , allows for a non-destructive mapping of the transverse Piezoelectric Coefficient across large-area wafers. Due to the clamping configuration used in wafer flexure experiments, e 31,f values can accurately be obtained within the central ∼2/3 of a full wafer. Measurements performed on a 1.3 μm thick randomly oriented polycrystalline PbZr 0.52 Ti 0.48 O 3 film made deposited on a 4 in. platinized silicon wafer by the sol–gel process show a high degree of uniformity, with e 31,f of −6.37 ± 0.60 C/m 2 for points measured within r = 3 cm.
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the wafer flexure technique for the determination of the transverse Piezoelectric Coefficient d31 of pzt thin films
Sensors and Actuators A-physical, 1998Co-Authors: J. F. Shepard, Paul Moses, Susan TroliermckinstryAbstract:Abstract This paper describes a simple and inexpensive method for evaluating the transverse Piezoelectric Coefficient ( d 31 ) of Piezoelectric thin films. The technique is based upon the flexure of a coated substrate which imparts an ac two-dimensional stress to the Piezoelectric film. The surface charge generated via the mechanical loading is converted to a voltage by an active integrator. Plate theory and elastic stress analyses are used to calculate the principal stresses applied to the film. The d 31 Coefficient can then be determined from knowledge of the electric charge produced and the calculated mechanical stress. For 52/48 sol-gel lead zirconate titanate (PZT) thin films, the d 31 Coefficient was found to range from − 5 to − 59 pC/N and is dependent on poling field.
M M Nayak - One of the best experts on this subject based on the ideXlab platform.
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evaluation of transverse Piezoelectric Coefficient of zno thin films deposited on different flexible substrates a comparative study on the vibration sensing performance
ACS Applied Materials & Interfaces, 2014Co-Authors: Sudeep Joshi, M M Nayak, K RajannaAbstract:We report on the systematic comparative study of highly c-axis oriented and crystalline Piezoelectric ZnO thin films deposited on four different flexible substrates for vibration sensing application. The flexible substrates employed for present experimental study were namely a metal alloy (Phynox), metal (aluminum), polyimide (Kapton), and polyester (Mylar). ZnO thin films were deposited by an RF reactive magnetron sputtering technique. ZnO thin films of similar thicknesses of 700 +/- 30 nm were deposited on four different flexible substrates to have proper comparative studies. The crystallinity, surface morphology, chemical composition, and roughness of ZnO thin films were evaluated by respective material characterization techniques. The transverse Piezoelectric Coefficient (d(31)) value for assessing the Piezoelectric property of ZnO thin films on different flexible substrates was measured by a four-point bending method. ZnO thin films deposited on Phynox alloy substrate showed relatively better material characterization results and a higher Piezoelectric d(31) Coefficient value as compared to ZnO films on metal and polymer substrates. In order to experimentally verify the above observations, vibration sensing studies were performed. As expected, the ZnO thin film deposited on Phynox alloy substrate showed better vibration sensing performance. It has generated the highest peak to peak output voltage amplitude of 256 mV as compared to that of aluminum (224 mV), Kapton (144 mV), and Mylar (46 mV). Therefore, metal alloy flexible substrate proves to be a more suitable, advantageous, and versatile choice for integrating ZnO thin films as compared to metal and polymer flexible substrates for vibration sensing applications. The present experimental study is extremely important and helpful for the selection of a suitable flexible substrate for various applications in the field of sensor and actuator technology.
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effect of post deposition annealing on transverse Piezoelectric Coefficient and vibration sensing performance of zno thin films
Applied Surface Science, 2014Co-Authors: Sudeep Joshi, M M Nayak, K RajannaAbstract:The present experimental study investigates the influence of post-deposition annealing on the transverse Piezoelectric Coefficient (d(31)) value of ZnO thin films deposited on a flexible metal alloy substrate, and its relationship with the vibration sensing performance. Highly c-axis oriented and crystalline ZnO thin films were deposited on flexible Phynox alloy substrate via radio frequency (RF) reactive magnetron sputtering. ZnO thin film samples were annealed at different temperatures ranging from 100 degrees C to 500 degrees C, resulting in the temperature of 300 degrees C determined as the optimum annealing temperature. The crystallinity, morphology, microstructure, and rms surface roughness of annealed ZnO thin films were systematically investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM), respectively. The Piezoelectric d(31) Coefficient value was measured by 4-point bending method. ZnO thin film annealed at 300 degrees C was highly c-axis oriented, crystalline, possesses fine surface morphology with uniformity in the grain size. This film showed higher d(31) Coefficient value of 7.2 pm V-1. A suitable in-house designed and developed experimental set-up, for evaluating the vibration sensing performance of annealed ZnO thin films is discussed. As expected the ZnO thin film annealed at 300 degrees C showed relatively better result for vibration sensing studies. It generates comparatively higher peak output voltage of 147 mV, due to improved structural and morphological properties, and higher Piezoelectric d(31) Coefficient value. (C) 2014 Elsevier B. V. All rights reserved.
J. F. Shepard - One of the best experts on this subject based on the ideXlab platform.
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the wafer flexure technique for the determination of the transverse Piezoelectric Coefficient d31 of pzt thin films
Sensors and Actuators A-physical, 1998Co-Authors: J. F. Shepard, Paul Moses, Susan TroliermckinstryAbstract:Abstract This paper describes a simple and inexpensive method for evaluating the transverse Piezoelectric Coefficient ( d 31 ) of Piezoelectric thin films. The technique is based upon the flexure of a coated substrate which imparts an ac two-dimensional stress to the Piezoelectric film. The surface charge generated via the mechanical loading is converted to a voltage by an active integrator. Plate theory and elastic stress analyses are used to calculate the principal stresses applied to the film. The d 31 Coefficient can then be determined from knowledge of the electric charge produced and the calculated mechanical stress. For 52/48 sol-gel lead zirconate titanate (PZT) thin films, the d 31 Coefficient was found to range from − 5 to − 59 pC/N and is dependent on poling field.
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The wafer flexure technique for the determination of the transverse Piezoelectric Coefficient (d31) of PZT thin films
Sensors and Actuators A: Physical, 1998Co-Authors: J. F. Shepard, P. J. Moses, Susan Trolier-mckinstryAbstract:This paper describes a simple and inexpensive method for evaluating the transverse Piezoelectric Coefficient (d31) of Piezoelectric thin films. The technique is based upon the flexure of a coated substrate which imparts an ac two-dimensional stress to the Piezoelectric film. The surface charge generated via the mechanical loading is converted to a voltage by an active integrator. Plate theory and elastic stress analyses are used to calculate the principal stresses applied to the film. The d31Coefficient can then be determined from knowledge of the electric charge produced and the calculated mechanical stress. For 52/48 sol-gel lead zirconate titanate (PZT) thin films, the d31Coefficient was found to range from -5 to -59 pC/N and is dependent on poling field. © 1998 Elsevier Science S.A. All rights reserved.
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Measurement of Effective Longitudinal Piezoelectric Coefficient of thin Films by Direct Piezoelectric Effect
MRS Proceedings, 1997Co-Authors: F. Xu, J. F. Shepard, Susan Trolier-mckinstryAbstract:This paper presents a new method for the measurement of the longitudinal Piezoelectric Coefficient of Piezoelectric thin films using the direct Piezoelectric effect. A uniform uniaxial stress was applied to the Piezoelectric thin film by high-pressure gas and the induced charge was collected and measured by a charge integrator. The effective longitudinal Piezoelectric Coefficient of lead zirconate titanate (PZT) 52/48 thin films made by sol-gel processing was measured by this method. Undoped films typically have d 33 values of ∼ 5 pC/N, while poled films have values up to 220 pC/N.