The Experts below are selected from a list of 156954 Experts worldwide ranked by ideXlab platform
Li Liu - One of the best experts on this subject based on the ideXlab platform.
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graded algan algan superlattice insert layer improved performance of algan based deep ultraviolet light emitting diodes
IEEE\ OSA Journal of Display Technology, 2016Co-Authors: Shanlin Wang, Yi An Yin, Naiyin Wang, Li LiuAbstract:An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are higher and the efficiency droop decreases from 43.6% to 28.8%, due to which the inserted layer weakened the Polarization Field in the MQWs, suppressed the electron leakage, and increased the hole injection efficiency.
T D Moustakas - One of the best experts on this subject based on the ideXlab platform.
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algan based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
Applied Physics Letters, 2011Co-Authors: Yitao Liao, Christos Thomidis, T D MoustakasAbstract:We report the development of AlGaN based deep ultraviolet light emitting diodes (UV-LEDs) by molecular beam epitaxy. By growing the AlGaN well layer under Ga-rich conditions to produce strong potential fluctuations, internal quantum efficiency of a quantum well structure emitting at 300 nm was found to be 32%. By combining such Ga-rich growth condition in the active region with Polarization Field enhanced carrier injection layers, deep UV-LEDs emitting at 273 nm were obtained with output power of 0.35 mW and 1.3 mW at 20 mA continuous wave and 100 mA pulsed drive current, respectively. The maximum external quantum efficiency was 0.4%.
S J Chua - One of the best experts on this subject based on the ideXlab platform.
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enhanced carrier injection in ingan gan multiple quantum wells led with Polarization induced electron blocking barrier
Physica E-low-dimensional Systems & Nanostructures, 2016Co-Authors: H F Liu, S J ChuaAbstract:Abstract In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large Polarization Field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the Polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.
Shanlin Wang - One of the best experts on this subject based on the ideXlab platform.
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graded algan algan superlattice insert layer improved performance of algan based deep ultraviolet light emitting diodes
IEEE\ OSA Journal of Display Technology, 2016Co-Authors: Shanlin Wang, Yi An Yin, Naiyin Wang, Li LiuAbstract:An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are higher and the efficiency droop decreases from 43.6% to 28.8%, due to which the inserted layer weakened the Polarization Field in the MQWs, suppressed the electron leakage, and increased the hole injection efficiency.
Yitao Liao - One of the best experts on this subject based on the ideXlab platform.
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algan based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
Applied Physics Letters, 2011Co-Authors: Yitao Liao, Christos Thomidis, T D MoustakasAbstract:We report the development of AlGaN based deep ultraviolet light emitting diodes (UV-LEDs) by molecular beam epitaxy. By growing the AlGaN well layer under Ga-rich conditions to produce strong potential fluctuations, internal quantum efficiency of a quantum well structure emitting at 300 nm was found to be 32%. By combining such Ga-rich growth condition in the active region with Polarization Field enhanced carrier injection layers, deep UV-LEDs emitting at 273 nm were obtained with output power of 0.35 mW and 1.3 mW at 20 mA continuous wave and 100 mA pulsed drive current, respectively. The maximum external quantum efficiency was 0.4%.