Ultraviolet Light

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James R Grandusky - One of the best experts on this subject based on the ideXlab platform.

  • 270 nm pseudomorphic Ultraviolet Light emitting diodes with over 60 mw continuous wave output power
    Applied Physics Express, 2013
    Co-Authors: James R Grandusky, G A Garrett, Jianfeng Chen, Shawn R Gibb, Mark C Mendrick, Craig Moe, Lee E Rodak, M Wraback, Leo J Schowalter
    Abstract:

    In this letter, the achievement of over 60 mW output power from pseudomorphic Ultraviolet Light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

  • high output power from 260 nm pseudomorphic Ultraviolet Light emitting diodes with improved thermal performance
    Applied Physics Express, 2011
    Co-Authors: James R Grandusky, Michael Wraback, Shawn R Gibb, Mark C Mendrick, Craig Moe, Leo J Schowalter
    Abstract:

    This letter reports on the improved performance of a pseudomorphic Ultraviolet Light-emitting diode (LED). At 100 mA input current, 9.2 mW of quasi-CW output power was measured in a calibrated integrating sphere. The addition of a heat sink, required for CW and higher power operation, introduced a numerical aperture of 0.86, and 72 mW was measured in pulsed mode at 1.7 A, indicating that the total output power exceeds 100 mW when corrected by the coupling factor. The high characteristic temperature of 983 K was instrumental in achieving these record output powers for an LED with wavelength shorter than 265 nm.

  • properties of mid Ultraviolet Light emitting diodes fabricated from pseudomorphic layers on bulk aluminum nitride substrates
    Applied Physics Express, 2010
    Co-Authors: James R Grandusky, Shawn R Gibb, Mark C Mendrick, L J Schowalter
    Abstract:

    High quality bulk aluminum nitride substrates were used to obtain pseudomorphic AlxGa1-xN layers with low dislocation density, smooth surfaces, and high conductivity. These layers were fabricated into mid-Ultraviolet Light emitting diodes with peak wavelengths in the range of 240–260 nm. The low dislocation density of the pseudomorphic quantum wells resulted in improved performance over previously published data. The output powers of the on-wafer measurements were greater than 5 mW in continuous wave operation, and 16 mW in pulsed operation. This was achieved utilizing single die (with an active area of 1×10-3 cm2).

Leo J Schowalter - One of the best experts on this subject based on the ideXlab platform.

  • 270 nm pseudomorphic Ultraviolet Light emitting diodes with over 60 mw continuous wave output power
    Applied Physics Express, 2013
    Co-Authors: James R Grandusky, G A Garrett, Jianfeng Chen, Shawn R Gibb, Mark C Mendrick, Craig Moe, Lee E Rodak, M Wraback, Leo J Schowalter
    Abstract:

    In this letter, the achievement of over 60 mW output power from pseudomorphic Ultraviolet Light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

  • high output power from 260 nm pseudomorphic Ultraviolet Light emitting diodes with improved thermal performance
    Applied Physics Express, 2011
    Co-Authors: James R Grandusky, Michael Wraback, Shawn R Gibb, Mark C Mendrick, Craig Moe, Leo J Schowalter
    Abstract:

    This letter reports on the improved performance of a pseudomorphic Ultraviolet Light-emitting diode (LED). At 100 mA input current, 9.2 mW of quasi-CW output power was measured in a calibrated integrating sphere. The addition of a heat sink, required for CW and higher power operation, introduced a numerical aperture of 0.86, and 72 mW was measured in pulsed mode at 1.7 A, indicating that the total output power exceeds 100 mW when corrected by the coupling factor. The high characteristic temperature of 983 K was instrumental in achieving these record output powers for an LED with wavelength shorter than 265 nm.

Mark C Mendrick - One of the best experts on this subject based on the ideXlab platform.

  • 270 nm pseudomorphic Ultraviolet Light emitting diodes with over 60 mw continuous wave output power
    Applied Physics Express, 2013
    Co-Authors: James R Grandusky, G A Garrett, Jianfeng Chen, Shawn R Gibb, Mark C Mendrick, Craig Moe, Lee E Rodak, M Wraback, Leo J Schowalter
    Abstract:

    In this letter, the achievement of over 60 mW output power from pseudomorphic Ultraviolet Light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

  • high output power from 260 nm pseudomorphic Ultraviolet Light emitting diodes with improved thermal performance
    Applied Physics Express, 2011
    Co-Authors: James R Grandusky, Michael Wraback, Shawn R Gibb, Mark C Mendrick, Craig Moe, Leo J Schowalter
    Abstract:

    This letter reports on the improved performance of a pseudomorphic Ultraviolet Light-emitting diode (LED). At 100 mA input current, 9.2 mW of quasi-CW output power was measured in a calibrated integrating sphere. The addition of a heat sink, required for CW and higher power operation, introduced a numerical aperture of 0.86, and 72 mW was measured in pulsed mode at 1.7 A, indicating that the total output power exceeds 100 mW when corrected by the coupling factor. The high characteristic temperature of 983 K was instrumental in achieving these record output powers for an LED with wavelength shorter than 265 nm.

  • properties of mid Ultraviolet Light emitting diodes fabricated from pseudomorphic layers on bulk aluminum nitride substrates
    Applied Physics Express, 2010
    Co-Authors: James R Grandusky, Shawn R Gibb, Mark C Mendrick, L J Schowalter
    Abstract:

    High quality bulk aluminum nitride substrates were used to obtain pseudomorphic AlxGa1-xN layers with low dislocation density, smooth surfaces, and high conductivity. These layers were fabricated into mid-Ultraviolet Light emitting diodes with peak wavelengths in the range of 240–260 nm. The low dislocation density of the pseudomorphic quantum wells resulted in improved performance over previously published data. The output powers of the on-wafer measurements were greater than 5 mW in continuous wave operation, and 16 mW in pulsed operation. This was achieved utilizing single die (with an active area of 1×10-3 cm2).

Shawn R Gibb - One of the best experts on this subject based on the ideXlab platform.

  • 270 nm pseudomorphic Ultraviolet Light emitting diodes with over 60 mw continuous wave output power
    Applied Physics Express, 2013
    Co-Authors: James R Grandusky, G A Garrett, Jianfeng Chen, Shawn R Gibb, Mark C Mendrick, Craig Moe, Lee E Rodak, M Wraback, Leo J Schowalter
    Abstract:

    In this letter, the achievement of over 60 mW output power from pseudomorphic Ultraviolet Light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

  • high output power from 260 nm pseudomorphic Ultraviolet Light emitting diodes with improved thermal performance
    Applied Physics Express, 2011
    Co-Authors: James R Grandusky, Michael Wraback, Shawn R Gibb, Mark C Mendrick, Craig Moe, Leo J Schowalter
    Abstract:

    This letter reports on the improved performance of a pseudomorphic Ultraviolet Light-emitting diode (LED). At 100 mA input current, 9.2 mW of quasi-CW output power was measured in a calibrated integrating sphere. The addition of a heat sink, required for CW and higher power operation, introduced a numerical aperture of 0.86, and 72 mW was measured in pulsed mode at 1.7 A, indicating that the total output power exceeds 100 mW when corrected by the coupling factor. The high characteristic temperature of 983 K was instrumental in achieving these record output powers for an LED with wavelength shorter than 265 nm.

  • properties of mid Ultraviolet Light emitting diodes fabricated from pseudomorphic layers on bulk aluminum nitride substrates
    Applied Physics Express, 2010
    Co-Authors: James R Grandusky, Shawn R Gibb, Mark C Mendrick, L J Schowalter
    Abstract:

    High quality bulk aluminum nitride substrates were used to obtain pseudomorphic AlxGa1-xN layers with low dislocation density, smooth surfaces, and high conductivity. These layers were fabricated into mid-Ultraviolet Light emitting diodes with peak wavelengths in the range of 240–260 nm. The low dislocation density of the pseudomorphic quantum wells resulted in improved performance over previously published data. The output powers of the on-wafer measurements were greater than 5 mW in continuous wave operation, and 16 mW in pulsed operation. This was achieved utilizing single die (with an active area of 1×10-3 cm2).

Michael Wraback - One of the best experts on this subject based on the ideXlab platform.

  • algan deep Ultraviolet Light emitting diodes with external quantum efficiency above 10
    Applied Physics Express, 2012
    Co-Authors: Max Shatalov, Jinwei Yang, Yuri Bilenko, Remis Gaska, Alex Lunev, Xuhong Hu, Alex Dobrinsky, M S Shur, G A Garrett, Michael Wraback
    Abstract:

    Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the Light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain the external quantum efficiency of 10.4% at 20 mA CW current with the output power up to 9.3 mW at 278 nm for AlGaN-based deep-Ultraviolet Light-emitting diodes grown on sapphire substrates.

  • high output power from 260 nm pseudomorphic Ultraviolet Light emitting diodes with improved thermal performance
    Applied Physics Express, 2011
    Co-Authors: James R Grandusky, Michael Wraback, Shawn R Gibb, Mark C Mendrick, Craig Moe, Leo J Schowalter
    Abstract:

    This letter reports on the improved performance of a pseudomorphic Ultraviolet Light-emitting diode (LED). At 100 mA input current, 9.2 mW of quasi-CW output power was measured in a calibrated integrating sphere. The addition of a heat sink, required for CW and higher power operation, introduced a numerical aperture of 0.86, and 72 mW was measured in pulsed mode at 1.7 A, indicating that the total output power exceeds 100 mW when corrected by the coupling factor. The high characteristic temperature of 983 K was instrumental in achieving these record output powers for an LED with wavelength shorter than 265 nm.