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David J. Stein - One of the best experts on this subject based on the ideXlab platform.

  • Role of alumina phase and size in tungsten CMP
    2000
    Co-Authors: David J. Stein, Robert Y.-s. Her
    Abstract:

    The role of the alumina particle phase and size on Polish Rate and process temperature was studied to elucidate removal mechanisms involved in tungsten CMP using potassium iodate-based slurries. Additional work including Polishing of blanket PETEOS and titanium films, and Polishing of M1 to V1 to M2 electrical test structures was performed to determine the performance of the various aluminas in production CMP. The Polish Rate of tungsten was highest with alpha alumina. Delta/theta and gamma alumina showed lower Polish Rates. Tungsten and PETEOS Polish Rates increased with particle size. Only alpha alumina was able to clear the titanium barrier stack. The size of the alpha alumina did not effect the electrical characteristics of short loop electrical test structures.

  • Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: II. Roles of Colloid Species and Slurry Chemistry
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated the role of colloid species and slurry chemistry in tungsten chemical mechanical Polishing. Specifically, we measured Polish Rate and process temperature in potassium iodate-based slurries as a function of colloid species and concentration, slurry pH, and potassium iodate concentration, as well as Polish pressure and Polish rotation Rate. We investigated slurries containing yttrium-, zirconium-, cerium-, and aluminum-based oxide and hydroxide colloids. We found that the colloid species had a large effect on Polish Rate and process temperature. The colloids showed two orders of magnitude in the Polish Rate range from ∼15 to ∼1975 A min -1 under otherwise identical experimental conditions (same Polisher, pad, slurry chemistry, pressure, and rotation Rates). Colloids of the same metal species from different sources also showed a large range in Polish Rates. Process temperature was a function of colloid species, however, the trend in Polish Rate did not always follow that of process temperature. Both Polish Rate and process temperature were dependent on potassium iodate concentration and slurry pH (controlled with a buffer). We also introduce a heuristic Polish mechanism to investigate the role of the colloid surface chemistry and its interaction with the tungsten surface. The data indicate that the surface characteristics of the colloid and how this surface interacts with the tungsten surface play a significant role in the mechanism of tungsten removal during Polish.

  • investigation of the kinetics of tungsten chemical mechanical Polishing in potassium iodate based slurries ii roles of colloid species and slurry chemistry
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated the role of colloid species and slurry chemistry in tungsten chemical mechanical Polishing. Specifically, we measured Polish Rate and process temperature in potassium iodate-based slurries as a function of colloid species and concentration, slurry pH, and potassium iodate concentration, as well as Polish pressure and Polish rotation Rate. We investigated slurries containing yttrium-, zirconium-, cerium-, and aluminum-based oxide and hydroxide colloids. We found that the colloid species had a large effect on Polish Rate and process temperature. The colloids showed two orders of magnitude in the Polish Rate range from ∼15 to ∼1975 A min -1 under otherwise identical experimental conditions (same Polisher, pad, slurry chemistry, pressure, and rotation Rates). Colloids of the same metal species from different sources also showed a large range in Polish Rates. Process temperature was a function of colloid species, however, the trend in Polish Rate did not always follow that of process temperature. Both Polish Rate and process temperature were dependent on potassium iodate concentration and slurry pH (controlled with a buffer). We also introduce a heuristic Polish mechanism to investigate the role of the colloid surface chemistry and its interaction with the tungsten surface. The data indicate that the surface characteristics of the colloid and how this surface interacts with the tungsten surface play a significant role in the mechanism of tungsten removal during Polish.

  • Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: I. Role of Alumina and Potassium lodate
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated aspects of the kinetics of tungsten chemical mechanical Polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten Polish Rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, Polish pressure, Polish rotation Rate, and pad type. We found that the Polish Rate data fit a multiterm regression model better than the empirical Preston equation. Polish Rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.

  • investigation of the kinetics of tungsten chemical mechanical Polishing in potassium iodate based slurries i role of alumina and potassium lodate
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated aspects of the kinetics of tungsten chemical mechanical Polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten Polish Rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, Polish pressure, Polish rotation Rate, and pad type. We found that the Polish Rate data fit a multiterm regression model better than the empirical Preston equation. Polish Rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.

Joseph L. Cecchia - One of the best experts on this subject based on the ideXlab platform.

  • Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: II. Roles of Colloid Species and Slurry Chemistry
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated the role of colloid species and slurry chemistry in tungsten chemical mechanical Polishing. Specifically, we measured Polish Rate and process temperature in potassium iodate-based slurries as a function of colloid species and concentration, slurry pH, and potassium iodate concentration, as well as Polish pressure and Polish rotation Rate. We investigated slurries containing yttrium-, zirconium-, cerium-, and aluminum-based oxide and hydroxide colloids. We found that the colloid species had a large effect on Polish Rate and process temperature. The colloids showed two orders of magnitude in the Polish Rate range from ∼15 to ∼1975 A min -1 under otherwise identical experimental conditions (same Polisher, pad, slurry chemistry, pressure, and rotation Rates). Colloids of the same metal species from different sources also showed a large range in Polish Rates. Process temperature was a function of colloid species, however, the trend in Polish Rate did not always follow that of process temperature. Both Polish Rate and process temperature were dependent on potassium iodate concentration and slurry pH (controlled with a buffer). We also introduce a heuristic Polish mechanism to investigate the role of the colloid surface chemistry and its interaction with the tungsten surface. The data indicate that the surface characteristics of the colloid and how this surface interacts with the tungsten surface play a significant role in the mechanism of tungsten removal during Polish.

  • investigation of the kinetics of tungsten chemical mechanical Polishing in potassium iodate based slurries ii roles of colloid species and slurry chemistry
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated the role of colloid species and slurry chemistry in tungsten chemical mechanical Polishing. Specifically, we measured Polish Rate and process temperature in potassium iodate-based slurries as a function of colloid species and concentration, slurry pH, and potassium iodate concentration, as well as Polish pressure and Polish rotation Rate. We investigated slurries containing yttrium-, zirconium-, cerium-, and aluminum-based oxide and hydroxide colloids. We found that the colloid species had a large effect on Polish Rate and process temperature. The colloids showed two orders of magnitude in the Polish Rate range from ∼15 to ∼1975 A min -1 under otherwise identical experimental conditions (same Polisher, pad, slurry chemistry, pressure, and rotation Rates). Colloids of the same metal species from different sources also showed a large range in Polish Rates. Process temperature was a function of colloid species, however, the trend in Polish Rate did not always follow that of process temperature. Both Polish Rate and process temperature were dependent on potassium iodate concentration and slurry pH (controlled with a buffer). We also introduce a heuristic Polish mechanism to investigate the role of the colloid surface chemistry and its interaction with the tungsten surface. The data indicate that the surface characteristics of the colloid and how this surface interacts with the tungsten surface play a significant role in the mechanism of tungsten removal during Polish.

  • Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: I. Role of Alumina and Potassium lodate
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated aspects of the kinetics of tungsten chemical mechanical Polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten Polish Rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, Polish pressure, Polish rotation Rate, and pad type. We found that the Polish Rate data fit a multiterm regression model better than the empirical Preston equation. Polish Rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.

  • investigation of the kinetics of tungsten chemical mechanical Polishing in potassium iodate based slurries i role of alumina and potassium lodate
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated aspects of the kinetics of tungsten chemical mechanical Polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten Polish Rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, Polish pressure, Polish rotation Rate, and pad type. We found that the Polish Rate data fit a multiterm regression model better than the empirical Preston equation. Polish Rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.

Suryadevara V. Babu - One of the best experts on this subject based on the ideXlab platform.

  • Effect of Transition Metal Compounds on Amorphous SiC Removal Rates
    ECS Journal of Solid State Science and Technology, 2014
    Co-Authors: Uma Rames Krishna Lagudu, Suryadevara V. Babu
    Abstract:

    We show here that transition metal compounds when used as additives to silica dispersions enhance a-SiC removal Rates (RRs). Silica slurries containing KMnO4 gave RRs as high as 2000 nm h−1 at pH 4. Addition of CuSO4 to this slurry further enhanced the RRs to ∼3500 nm h−1 at pH 6. Furthermore, addition of a low concentration of 250 ppm Brij-35 to this slurry suppressed the RRs of SiO2 to zero, while retaining the RRs of a-SiC at ∼2700 nm h−1, a combination of RRs that is appropriate for hard mask Polishing. The underlying mechanisms causing the enhancement in the RRs of a-SiC in the presence of transition metal compounds is discussed based on the RR data and XPS analysis of post-Polished wafer surfaces. It is shown that a mixed redox system consisting of the oxidation of a-SiC by KMnO4 enhanced by the catalytic activity of the Cu(II) salt is responsible for the rapid oxidation of a-SiC and the observed enhancement in Polish Rate with silica based slurries. The adsorption characteristics of Brij-35 on the oxide and carbide surfaces are described based on thermogravimetry data and in achieving the desired Polish Rate selectivity. © The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.021406jss] All rights reserved.

  • Effect of Ceria Size and Concentration in Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP)
    2011
    Co-Authors: S. Pandija, G. Criniere, C. Ceintrey, Suryadevara V. Babu
    Abstract:

    The effect of size and concentration of ceria abrasive particles (untreated and treated with a poly-acrylic acid (PAA) additive used as a dispersant) on oxide and nitride Polish Rates for STI CMP was investigated. It was observed that a significantly high oxide Polish Rate (~ 350-370 nm min -1 at 4 psi down pressure) was obtained for both 60 nm and 45 nm ceria particles at a low concentration of 0.25 to 0.375 % by wt. The corresponding nitride Polish Rates were also relatively high (~80-100 nm min -1 ). In contrast, for 25 nm ceria particles, both the oxide and nitride Polish Rates were low (

  • Chemical Mechanical Polishing of Dielectric Films Using Mixed Abrasive Slurries
    Journal of The Electrochemical Society, 2003
    Co-Authors: A. Jindal, Sharath Hegde, Suryadevara V. Babu
    Abstract:

    We report on the use of mixed abrasive slurries (MAS) containing alumina and ceria abrasives for chemical mechanical planarization (CMP) of silicon dioxide and silicon nitride films for shallow trench isolation applications, extending an earlier investigation of alumina/silica MAS for the CMP of copper and tantalum films. These slurries show a Polish Rate selectivity between oxide and nitride films that is as high as 65 and show an excellent surface quality even without additives. Analysis of dried slurry particles using transmission electron microscopy indicates formation of a sheath of smaller ceria particles around larger alumina particles. Possible explanations and supportive arguments for the improved performance of MAS during CMP are presented based on the particle-particle and particle-film interactions.

  • Mechanism and an empirical model of the fixed abrasivePolishing process on a web-format tool
    Journal of Materials Research, 2003
    Co-Authors: Rajasekhar Venigalla, Laertis Economikos, Suryadevara V. Babu
    Abstract:

    Several chemical-mechanical planarization characterization test wafers were Polished to understand the Polishing mechanism of the fixed abrasive process. Oxide thickness removal in the "active" (up) and the "recessed" (down) regions of the wafer was monitored for different times of Polish. It was found that there was no significant removal in the recessed areas until the step height was reduced to about 100 A, and the Polish Rate in the active area decreased rapidly once this critical step height had been attained. At this critical step height, the Polish Rate of the down areas started to increase and approached that of the up area, with both eventually reaching the negligibly low removal Rate of the blanket wafer. The drop in the Polish Rate of the up area, after planarity had been attained, was fitted to an exponential model.

  • Chemical–mechanical Polishing of copper and tantalum with silica abrasives
    Journal of Materials Research, 2001
    Co-Authors: M. Hariharaputhiran, Suryadevara V. Babu
    Abstract:

    Chemical mechanical Polishing of copper and tantalum was performed using fumed amorphous silica abrasive particles dispersed in H2O2, Fe(NO3)3, and glycine solutions. Results showed that in DI water silica did not Polish Cu but Ta had a relatively high Polish Rate. Cu Polish Rate decreased with increasing particle concentration in Fe(NO3)3-based slurries due to the adsorption of Fe3+ on the silica surface. Addition of H2O2 enhanced Cu Polish Rate but reduced Ta Polish Rate. The specific surface area of the particles played an important role in the removal of Ta and Cu, presumably due to some chemical bonding between the materials being Polished and the silica particles.

Dale L. Hetherington - One of the best experts on this subject based on the ideXlab platform.

  • Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: II. Roles of Colloid Species and Slurry Chemistry
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated the role of colloid species and slurry chemistry in tungsten chemical mechanical Polishing. Specifically, we measured Polish Rate and process temperature in potassium iodate-based slurries as a function of colloid species and concentration, slurry pH, and potassium iodate concentration, as well as Polish pressure and Polish rotation Rate. We investigated slurries containing yttrium-, zirconium-, cerium-, and aluminum-based oxide and hydroxide colloids. We found that the colloid species had a large effect on Polish Rate and process temperature. The colloids showed two orders of magnitude in the Polish Rate range from ∼15 to ∼1975 A min -1 under otherwise identical experimental conditions (same Polisher, pad, slurry chemistry, pressure, and rotation Rates). Colloids of the same metal species from different sources also showed a large range in Polish Rates. Process temperature was a function of colloid species, however, the trend in Polish Rate did not always follow that of process temperature. Both Polish Rate and process temperature were dependent on potassium iodate concentration and slurry pH (controlled with a buffer). We also introduce a heuristic Polish mechanism to investigate the role of the colloid surface chemistry and its interaction with the tungsten surface. The data indicate that the surface characteristics of the colloid and how this surface interacts with the tungsten surface play a significant role in the mechanism of tungsten removal during Polish.

  • investigation of the kinetics of tungsten chemical mechanical Polishing in potassium iodate based slurries ii roles of colloid species and slurry chemistry
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated the role of colloid species and slurry chemistry in tungsten chemical mechanical Polishing. Specifically, we measured Polish Rate and process temperature in potassium iodate-based slurries as a function of colloid species and concentration, slurry pH, and potassium iodate concentration, as well as Polish pressure and Polish rotation Rate. We investigated slurries containing yttrium-, zirconium-, cerium-, and aluminum-based oxide and hydroxide colloids. We found that the colloid species had a large effect on Polish Rate and process temperature. The colloids showed two orders of magnitude in the Polish Rate range from ∼15 to ∼1975 A min -1 under otherwise identical experimental conditions (same Polisher, pad, slurry chemistry, pressure, and rotation Rates). Colloids of the same metal species from different sources also showed a large range in Polish Rates. Process temperature was a function of colloid species, however, the trend in Polish Rate did not always follow that of process temperature. Both Polish Rate and process temperature were dependent on potassium iodate concentration and slurry pH (controlled with a buffer). We also introduce a heuristic Polish mechanism to investigate the role of the colloid surface chemistry and its interaction with the tungsten surface. The data indicate that the surface characteristics of the colloid and how this surface interacts with the tungsten surface play a significant role in the mechanism of tungsten removal during Polish.

  • Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: I. Role of Alumina and Potassium lodate
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated aspects of the kinetics of tungsten chemical mechanical Polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten Polish Rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, Polish pressure, Polish rotation Rate, and pad type. We found that the Polish Rate data fit a multiterm regression model better than the empirical Preston equation. Polish Rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.

  • investigation of the kinetics of tungsten chemical mechanical Polishing in potassium iodate based slurries i role of alumina and potassium lodate
    Journal of The Electrochemical Society, 1999
    Co-Authors: David J. Stein, Dale L. Hetherington, Joseph L. Cecchia
    Abstract:

    We investigated aspects of the kinetics of tungsten chemical mechanical Polishing (CMP) in iodate‐based slurries. Specifically, we performed experiments in which we measured the tungsten Polish Rate and process temperature as a function of alumina concentration, potassium iodate concentration, platen temperature, Polish pressure, Polish rotation Rate, and pad type. We found that the Polish Rate data fit a multiterm regression model better than the empirical Preston equation. Polish Rate was found to vary with all of the factors investigated. Process temperature varied with all of the factors except potassium iodate concentration. These results, in combination with an energy balance on the entire process, indicate the change in temperature due to alumina concentration is mostly due to energy input from increased shaft work. This implies that the chemical and physical interactions between the alumina and tungsten surfaces are complex and play an important role in the mechanism of tungsten removal during CMP. © 1999 The Electrochemical Society. All rights reserved.

  • In Situ Electrochemical Investigation of Tungsten Electrochemical Behavior during Chemical Mechanical Polishing
    Journal of The Electrochemical Society, 1998
    Co-Authors: David J. Stein, Dale L. Hetherington, Terry Guilinger, Joseph L. Cecchi
    Abstract:

    The electrochemical behavior of tungsten during chemical mechanical Polishing (CMP) was observed in order to investigate a proposed blanket passivation and abrasion mechanism for tungsten removal. The experiments were performed in a cell that allowed electrochemical measurements to be made during Polish. Polish Rates were determined from the same samples used in the cell. Alumina-based Polish slurries containing potassium iodate, ferric nitRate, or ammonium persulfate were used. DC polarization experiments show no evidence of passive film formation on the tungsten during Polish. Tungsten oxidation Rates measured during Polish account for removal Rates that are 1 to 2 orders of magnitude below the measured Polish Rate. Values of the charge-transfer resistance (measured by ac impedance spectroscopy) during Polish are 1 to 2 orders of magnitude higher than expected from the Polish Rate, thus corroborating the dc-based data. Polish Rates under potentiostatic conditions were also measured. The current required to maintain the metal anodic of the open-circuit potential is well below the current expected from measured Polish Rates, assuming complete oxidation of the tungsten. The Polish Rate during cathodic potentiostatic conditions ({minus}0.5 V with regard to the open-circuit potential) was similar to the Polish Rate at open circuit. The authors conclude thatmore » the formation of a blanket passive layer does not significantly contribute to tungsten removal during CMP.« less

Joseph M Steigerwald - One of the best experts on this subject based on the ideXlab platform.

  • chemical processes in the chemical mechanical Polishing of copper
    Materials Chemistry and Physics, 1995
    Co-Authors: Joseph M Steigerwald, R J Gutmann, S. P. Murarka, D. J. Duquette
    Abstract:

    The mechanisms by which removal and planarization occur during the chemical mechanical Polishing (CMP) of copper, used for pattern delineation in a multilevel metallization scheme, are investigated in this paper. We propose that removal occurs as mechanical abrasion of the surface followed by chemical dissolution of the abraded species. Planarization is achieved by the use of a rigid Polishing pad that provides mechanical abrasion only to the high areas on the copper surface and by the formation of a surface layer on the copper during Polishing to prevent dissolution of copper in the low areas. Fundamentals of electrochemistry are used to explain and predict both the dissolution of copper and the formation of a surface layer in the CMP slurry. Examples of Polishing slurries are presented to demonstRate our hypotheses, including a complexing agent (ammonia) plus oxidizer (ferricyanide ion or nitRate ion) slurry and an oxidizing acid (nitric acid) plus corrosion inhibitor (benzotriazole) slurry. Finally, the mechanisms used to explain the CMP of copper are used to explain anomalous behavior during the CMP of titanium, in which the presence of copper ions in the Polish slurry acceleRates the Polish Rate of titanium. Titanium is used as a diffusion barrier and adhesion promoter for copper.

  • electrochemical potential measurements during the chemical mechanical Polishing of copper thin films
    Journal of The Electrochemical Society, 1995
    Co-Authors: Joseph M Steigerwald, D. J. Duquette, S. P. Murarka, Ronald J. Gutmann
    Abstract:

    A description is given of the mixed electrochemical potential measured in situ during the chemical-mechanical Polishing of copper. Potential measurements are indicative of the dissolution Rate of copper and of the equilibrium form of the Polished copper by-products. These measurements are used to explain the Polish performance in several ammonia-based slurries. Specifically, the Polish Rate is shown to correlate with the potential and the change in potential during Polishing. In addition, complexing of copper ions with dissolved ammonia is discussed and shown to be an effective method for increasing the solubility of copper ions in the slurry and thereby increasing the Polish Rate.

  • Electrochemical Potential Measurements during the Chemical‐Mechanical Polishing of Copper Thin Films
    Journal of The Electrochemical Society, 1995
    Co-Authors: Joseph M Steigerwald, D. J. Duquette, S. P. Murarka, Ronald J. Gutmann
    Abstract:

    A description is given of the mixed electrochemical potential measured in situ during the chemical-mechanical Polishing of copper. Potential measurements are indicative of the dissolution Rate of copper and of the equilibrium form of the Polished copper by-products. These measurements are used to explain the Polish performance in several ammonia-based slurries. Specifically, the Polish Rate is shown to correlate with the potential and the change in potential during Polishing. In addition, complexing of copper ions with dissolved ammonia is discussed and shown to be an effective method for increasing the solubility of copper ions in the slurry and thereby increasing the Polish Rate.

  • Effect of Copper Ions in the Slurry on the Chemical‐Mechanical Polish Rate of Titanium
    Journal of The Electrochemical Society, 1994
    Co-Authors: Joseph M Steigerwald, S. P. Murarka, Ronald J. Gutmann, David J. Duquette
    Abstract:

    Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a copper metallization scheme. Chemical-mechanical Polishing (CMP) is being used to define the inlaid copper interconnections. An investigation into the CMP of titanium has revealed an interaction between the presence of copper ions in the Polish slurry and the Polish Rate of titanium. The Polish Rate of titanium increases dramatically when copper ions are present in the slurry from the previous copper Polish step. In this paper, we present and discuss the results of these investigations

  • effect of copper ions in the slurry on the chemical mechanical Polish Rate of titanium
    Journal of The Electrochemical Society, 1994
    Co-Authors: Joseph M Steigerwald, S. P. Murarka, R J Gutmann, D. J. Duquette
    Abstract:

    Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a copper metallization scheme. Chemical-mechanical Polishing (CMP) is being used to define the inlaid copper interconnections. An investigation into the CMP of titanium has revealed an interaction between the presence of copper ions in the Polish slurry and the Polish Rate of titanium. The Polish Rate of titanium increases dramatically when copper ions are present in the slurry from the previous copper Polish step. In this paper, we present and discuss the results of these investigations