The Experts below are selected from a list of 195 Experts worldwide ranked by ideXlab platform
H. Paul Maruska - One of the best experts on this subject based on the ideXlab platform.
-
Optoelectronic applications of porous Polycrystalline Silicon
Applied Physics Letters, 1993Co-Authors: Nader M. Kalkhoran, Fereydoon Namavar, H. Paul MaruskaAbstract:We report visible light emission from porous structures formed in bulk and thin‐film Polycrystalline Silicon materials by anodic etching in an HF:ethanol solution. Our results indicate photoluminescence (PL) peaks at wavelengths between 650 and 655 nm and with intensities comparable to those typically obtained from porous samples of single‐crystal Silicon. The analyses of the surface morphology of porous Polycrystalline Silicon (PPSI) layers suggest that the etch rate could be preferentially greater at the grain boundaries. We have illuminated PPSI films formed on quartz substrates from both the front and rear of the samples and have measured PL emission from the same corresponding sides. Luminescent Polycrystalline Silicon films offer the possibility of integrating a novel Si‐based flat‐panel display along with the recently developed thin‐film transistor (TFT) driver circuitry on a glass substrate. In addition, nanostructures originating from Polycrystalline Silicon substrates may enable low‐cost fabrica...
Yoji Saito - One of the best experts on this subject based on the ideXlab platform.
-
Energy distribution of trapping states at grain boundaries in Polycrystalline Silicon
Journal of Applied Physics, 1992Co-Authors: Ichiro Yamamoto, Hiroshi Kuwano, Yoji SaitoAbstract:A method to obtain the energy distribution of traps at grain boundaries in Polycrystalline Silicon films from the activation energy of resistivity measured as a function of doping concentration is proposed. The energy distribution of trapping states in the energy gap for plasma‐hydrogenated and nonhydrogenated Polycrystalline Silicon films doped with boron are determined: nonhydrogenated films have a Gaussian distribution with a peak at the midgap, and after plasma hydrogenation the peak at the midgap has diminished. The validity of the monoenergetic trap model applied to the conduction in nonhydrogenated and plasma‐hydrogenated Polycrystalline Silicon films is discussed.
Cao X - One of the best experts on this subject based on the ideXlab platform.
-
Research Progress on Polycrystalline Silicon Prepared by Sodium Fluosilicate
Bulletin of the Chinese ceramic society, 2014Co-Authors: Cao XAbstract:There is an overview about the use,the importance and the main research methods of Polycrystalline Silicon which focuses on the method that using sodium fluosilicate to prepare of Polycrystalline Silicon. As one kind of method to prepare of Solar Grade Silicon,it will be with good prospects for development due to its low energy consumption and little pollution. There is also an discussion about the research progress and the existing difficulties of using sodium fluosilicate to prepare of Polycrystalline Silicon. To realize the industrialization of preparing of Solar Grade Silicon,we think there are problems remaining to be solved.
Sunqi Feng - One of the best experts on this subject based on the ideXlab platform.
-
The Oxidation Kinetics of Thin Polycrystalline Silicon Films
Journal of The Electrochemical Society, 1991Co-Authors: Yangyuan Wang, Jiang Tao, Shen Tong, Tiejun Sun, Aizhen Zhang, Sunqi FengAbstract:The oxidation dynamics and morphology of undoped and heavily phosphorus-doped Polycrystalline Silicon films oxidized at a wide temperature and time range in dry and wet O2 atmosphere have been investigated. It is shown that the oxidation rates of Polycrystalline Silicon films are different from that of single-crystal Silicon when the oxidation temperature is below 1000-degrees-C. There is a characteristic oxidation time, t(c), under which the undoped polySilicon oxide is not only thicker than that of (100)-oriented single-crystal Silicon, but also thicker than that of (111)-oriented single-crystal Silicon. For phosphorus-doped Polycrystalline Silicon films, the oxide thickness is thinner not only than that of (111)-oriented, single-crystal Silicon, but also thinner than that of (100)-oriented, single-crystal Silicon. According to TEM cross-sectional studies, these characteristics are due to the enhanced oxidation at grain boundaries of Polycrystalline Silicon films. A stress-enhanced oxidation model has been proposed and used to explain successfully the enhanced oxidation at grain boundaries of Polycrystalline Silicon films. Using this model, the oxidation linear rate constant of polySilicon (B/A)poly has been calculated and used in the modeling of the oxidation dynamics. The model results are in good agreement with the experimental data over the entire temperature and time ranges studied.
Shen Hou-fa - One of the best experts on this subject based on the ideXlab platform.
-
Simulation for Temperature Distribution of Polycrystalline Silicon Casting Process
Computer Simulation, 2010Co-Authors: Shen Hou-faAbstract:The temperature distribution in the Polycrystalline Silicon ingot furnace is significant to the melting and solidification process of the Silicon.It is important for the process design to simulate the temperature distribution in different conditions with the precise boundary conditions.A mathematical model of transient heat transfer for solidification of the Polycrystalline Silicon ingot was built,and a reverse computing method for defining the boundary conditions was provided based on the PID control theory.The numerical results of the temperature distribution in a Polycrystalline Silicon ingot furnace show that the calculation precision with the PID control method is satisfied.