The Experts below are selected from a list of 273 Experts worldwide ranked by ideXlab platform

C. Van Katwijk - One of the best experts on this subject based on the ideXlab platform.

Dimitris Tsoukalas - One of the best experts on this subject based on the ideXlab platform.

  • Capacitive Pressure sensors and Switches fabricated using strain compensated SiGeB
    Microelectronic Engineering, 2006
    Co-Authors: Stavros Chatzandroulis, S. Koliopoulou, Dimitrios Goustouridis, Dimitris Tsoukalas
    Abstract:

    The fabrication of capacitive Pressure sensors and Pressure Switches using a [email protected] thick strain compensated heavily boron doped SiGeB diaphragm is presented. The process relies on the silicon fusion bonding of two silicon wafers to seal the Pressure sensor cavity and construct the device. Both rectangular and circular type Pressure sensors and Pressure Switches have successfully been fabricated using this process. Results are presented of a capacitive type sensor operating in the medical Pressure regime (0-300mmHg) with a sensitivity to Pressure of 1.5fF/mmHg or 305ppm/mmHg, and of a Pressure Switch operating in the 3-8bar Pressure range and are thus suitable for a number of industrial and automotive applications. The current flowing through the Switch when biased at 2V jumps over six orders of magnitude when its two plates come in contact at a well defined Pressure threshold.

  • Capacitive Pressure sensors and Switches fabricated using strain compensated SiGeB
    Microelectronic Engineering, 2006
    Co-Authors: Stavros Chatzandroulis, S. Koliopoulou, Dimitrios Goustouridis, Dimitris Tsoukalas
    Abstract:

    The fabrication of capacitive Pressure sensors and Pressure Switches using a 2.4 mu m thick strain compensated heavily boron doped SiGeB diaphragm is presented. The process relies on the silicon fusion bonding of two silicon wafers to seal the Pressure sensor cavity and construct the device. Both rectangular and circular type Pressure sensors and Pressure Switches have successfully been fabricated using this process. Results are presented of a capacitive type sensor operating in the medical Pressure regime (0-300 mmHg) with a sensitivity to Pressure of 1.5 fF/mmHg or 305 ppm/mmHg, and of a Pressure Switch operating in the 3-8 bar Pressure range and are thus suitable for a number of industrial and automotive applications. The current flowing through the Switch when biased at 2 V jumps over six orders of magnitude when its two plates come in contact at a well defined Pressure threshold. (c) 2006 Elsevier B.V. All rights reserved

Shahrzad Towfighian - One of the best experts on this subject based on the ideXlab platform.

  • A Tunable Electrostatic MEMS Pressure Switch
    IEEE Transactions on Industrial Electronics, 2020
    Co-Authors: Mark Pallay, Ronald N. Miles, Shahrzad Towfighian
    Abstract:

    In this article, we demonstrate a tunable air Pressure Switch. The Switch detects when the ambient Pressure drops below a threshold value and automatically triggers without the need for any computational overhead to read the Pressure or trigger the Switch. The Switch exploits the significant fluid interaction of a microelectro-mechanical systems beam undergoing a large oscillation from electrostatic levitation to detect changes in ambient Pressure. If the oscillation amplitude near the resonant frequency is above a threshold level, dynamic pull-in is triggered and the Switch is closed. The Pressure at which the Switch closes can be tuned by adjusting the voltage applied to the Switch. The use of electrostatic levitation allows the device to be released from their pulled-in position and reused many times without mechanical failure. A theoretical model is derived and validated with experimental data. It is experimentally demonstrated that the Pressure Switching mechanism is feasible.

Cai Jinhui - One of the best experts on this subject based on the ideXlab platform.

  • A Study of EMD Modal Identification Based on Laplace Wavelet Matching
    2012 Second International Conference on Intelligent System Design and Engineering Application, 2012
    Co-Authors: Jiang Qing, Li Ting, Cai Jinhui
    Abstract:

    This paper proposes a method of empirical mode decomposition (EMD) modal parameter identification based on Laplace wavelet matching, on the basis of synchronization test for Pressure Switch. Taking a Pressure Switch which is used in the air-conditioning of automotives as a object, the paper conducts a lot experiments with hammering test and white noise for vibrating identification of diaphragm. Results proves that the method is able to overcome the disturbance of white nois and impulse noise, extract accurate modal parameters from multimoding aliasing and crowded modals, and finally identify the vibrating signal of diaphragm which solves the problem of synchronization test for Pressure Switch, and has the guidance significance to the related profession.

  • A Study of EMD Modal Identification Based on Laplace Wavelet Matching
    2012 Second International Conference on Intelligent System Design and Engineering Application, 2012
    Co-Authors: Jiang Qing, Li Ting, Cai Jinhui
    Abstract:

    This paper proposes a method of empirical mode decomposition (EMD) modal parameter identification based on Laplace wavelet matching, on the basis of synchronization test for Pressure Switch. Taking a Pressure Switch which is used in the air-conditioning of automotives as a object, the paper conducts a lot experiments with hammering test and white noise for vibrating identification of diaphragm. Results proves that the method is able to overcome the disturbance of white noise and impulse noise, extract accurate modal parameters from multimoding aliasing and crowded modals, and finally identify the vibrating signal of diaphragm which solves the problem of synchronization test for Pressure Switch, and has the guidance significance to the related profession.

  • Application of modal parameters identification in synchronization test for Pressure Switch
    Transducer and Microsystem Technologies, 2011
    Co-Authors: Cai Jinhui
    Abstract:

    A method of empirical mode decomposition(EMD) modal parameter identification is proposed based on Laplace wavelet matching,on the basis of synchronization time test scheme for Pressure Switch.Taking a Pressure Switch which is used in air-conditioner of automobile as an object,experiments are conducted with hammering test and white noise excited for vibrating identification of diaphragm.Results prove that the method is able to overcome the disturbance of white nois and impulse noise,modal parameters is extracted accurately from multimoding aliasing and crowded modals,and the vibrating signal of diaphragm is identified which solves the problem of synchronization test for Pressure Switch.It has guidance significance to related profession.

Stavros Chatzandroulis - One of the best experts on this subject based on the ideXlab platform.

  • Capacitive Pressure sensors and Switches fabricated using strain compensated SiGeB
    Microelectronic Engineering, 2006
    Co-Authors: Stavros Chatzandroulis, S. Koliopoulou, Dimitrios Goustouridis, Dimitris Tsoukalas
    Abstract:

    The fabrication of capacitive Pressure sensors and Pressure Switches using a [email protected] thick strain compensated heavily boron doped SiGeB diaphragm is presented. The process relies on the silicon fusion bonding of two silicon wafers to seal the Pressure sensor cavity and construct the device. Both rectangular and circular type Pressure sensors and Pressure Switches have successfully been fabricated using this process. Results are presented of a capacitive type sensor operating in the medical Pressure regime (0-300mmHg) with a sensitivity to Pressure of 1.5fF/mmHg or 305ppm/mmHg, and of a Pressure Switch operating in the 3-8bar Pressure range and are thus suitable for a number of industrial and automotive applications. The current flowing through the Switch when biased at 2V jumps over six orders of magnitude when its two plates come in contact at a well defined Pressure threshold.

  • Capacitive Pressure sensors and Switches fabricated using strain compensated SiGeB
    Microelectronic Engineering, 2006
    Co-Authors: Stavros Chatzandroulis, S. Koliopoulou, Dimitrios Goustouridis, Dimitris Tsoukalas
    Abstract:

    The fabrication of capacitive Pressure sensors and Pressure Switches using a 2.4 mu m thick strain compensated heavily boron doped SiGeB diaphragm is presented. The process relies on the silicon fusion bonding of two silicon wafers to seal the Pressure sensor cavity and construct the device. Both rectangular and circular type Pressure sensors and Pressure Switches have successfully been fabricated using this process. Results are presented of a capacitive type sensor operating in the medical Pressure regime (0-300 mmHg) with a sensitivity to Pressure of 1.5 fF/mmHg or 305 ppm/mmHg, and of a Pressure Switch operating in the 3-8 bar Pressure range and are thus suitable for a number of industrial and automotive applications. The current flowing through the Switch when biased at 2 V jumps over six orders of magnitude when its two plates come in contact at a well defined Pressure threshold. (c) 2006 Elsevier B.V. All rights reserved